"inverter igbt n channel"
Found 35 Products
Reliable And Rugged Inverter IGBT Enhancement Mode N Channel
Reliable and Rugged Inverter IGBT Enhancement Mode N Channel Features Positive temperature coefficient Fast Switching Low VCE(sat) Reliable and Rugged APPLICATIONS UPS Motor drives Boost Portable power station
15A 1200V Inverter IGBT Short Circuit Withstands Time 10μS For Motor Driver
15A 1200V Inverter IGBT Short Circuit Withstands Time 10S For Motor Driver N-Channel Enhancement Mode Power IGBT LGT15N120B FEATURES Trench and field-stop technology Low collector to emitter saturation voltage Short circuit withstands time 10s High ruggedness performance Easy parallel switching capability APPLICATIONS Inverter TO-247 Motor driver Q1.Who are we? A:We are based in Guangdong, China,factory start from 2012,is a national high-tech enterprise that
N-Channel Enhancement Mode Power IGBT 15A 650V For General Inverter
15A 650V N-Channel Enhancement Mode Power IGBT For General Inverter Q1.Who are we? A:We are based in Guangdong, China,factory start from 2012,is a national high-tech enterprise that focuses on packaging and testing of power semiconductor devices.currently has more than 180 has more than 180 employees and more than 10000 square meters area.We provide over 600 KK high-quality power semiconductor device per annum. Q2.What is your product line? A:Existing main production lines
Silicon N Channel IGBT TOSHIBA GT40WR21Q Featuring Integrated Freewheeling Diode and RoHS Compliance
Product OverviewThe GT40WR21 is a silicon N-Channel IGBT designed for voltage-resonant inverter switching applications. It features 6.5th generation technology, a monolithic RC-IGBT with an integrated freewheeling diode, high-speed switching capabilities, low saturation voltage, and a high junction temperature rating. This product is dedicated to specific inverter applications and should not be used for other purposes.Product AttributesBrand: ToshibaProduct Type: Discrete
High speed switching TOSHIBA GT30J122A STA1 E D Silicon N Channel IGBT for inverter and PFC circuits
Product OverviewThe GT30J122A is a Silicon N-Channel IGBT from Toshiba, designed for current-resonant inverter switching and partial-switching power factor correction (PFC) applications. It features high-speed switching with a typical fall time of 0.20 s and a low saturation voltage of 1.7 V (typ.) at 50 A collector current. This 4th generation enhancement-mode IGBT is packaged in a TO-3P(N) format.Product AttributesBrand: ToshibaCommercial Production Start: 2010-06Certificat
Toshiba GT20N135SRA S1E Discrete N Channel IGBT with TO 247 Package and Integrated Freewheeling Diode
Product OverviewThe GT20N135SRA is a discrete Silicon N-Channel IGBT from Toshiba, designed for high-speed switching applications. It features a 6.5th generation IGBT with an integrated freewheeling diode (FWD), offering low saturation voltage and high junction temperature capabilities. This product is dedicated to voltage-resonant inverter switching, soft switching, induction cooktops, and home appliance applications.Product AttributesBrand: ToshibaModel: GT20N135SRAType:
TOSHIBA GT30N135SRA S1E Discrete IGBT Designed for Soft Switching Applications and Induction Cooktop
Product OverviewThe GT30N135SRA is a discrete Silicon N-Channel IGBT designed for voltage-resonant inverter switching, soft switching applications, and induction cooktops and home appliances. This 6.5th generation RC-IGBT integrates a freewheeling diode (FWD) monolithically. It offers high-speed switching with a typical IGBT fall time of 0.25 s and a low saturation voltage of 1.65 V (typ.). The device supports a high junction temperature of 175 C (max) and is sensitive to
Current resonant inverter switching solution featuring TOSHIBA GT50JR22 Silicon N Channel IGBT device
Product OverviewThe GT50JR22 is a Silicon N-Channel IGBT designed for dedicated current-resonant inverter switching applications. It features 6.5th generation technology, high-speed switching capabilities with a typical fall time of 0.05 s, and a low saturation voltage of 1.55 V (typ.). The device integrates a Freewheeling Diode (FWD) monolithically, offering enhancement mode operation and a high junction temperature capability of 175C (max).Product AttributesBrand:
Jilin Sino Microelectronics JT015N065FED N channel IGBT transistor ideal for UPS power supply design
Product OverviewThe JT015N065FED is an N-channel Insulated Gate Bipolar Transistor (IGBT) designed for general-purpose inverters and UPS power supplies. It features low gate charge, Trench FS Technology, and a typical saturation voltage of 1.6V at 15A and 25C. This RoHS-compliant product is available in a TO-220MF package.Product AttributesBrand: Jilin Sino-microelectronics Co., LtdOrigin: ChinaMaterial: N-channel IGBTColor: Not specifiedCertifications: RoHSHalogen Free:
High Speed Switching Silicon N Channel IGBT TOSHIBA GT60M324Q with 175C Maximum Junction Temperature
Product OverviewThe TOSHIBA GT60M324 is a Sixth Generation Insulated Gate Bipolar Transistor (IGBT) made of Silicon N Channel. It is designed for consumer applications and voltage resonance inverter switching applications. Key advantages include a built-in Fast Recovery Diode (FRD), high-speed switching capabilities with a typical fall time of 0.11s, low saturation voltage of 1.70V (typ.), and a high junction temperature rating of 175C (max). It is RoHS compatible.Product
Current resonant inverter switching IGBT TOSHIBA GT50JR22S1WLDE S with integrated Freewheeling Diode
Product OverviewThe GT50JR22 is a discrete Silicon N-Channel IGBT designed for current-resonant inverter switching applications. It features a 6.5th generation IGBT with an integrated Freewheeling Diode (FWD), offering high-speed switching capabilities and low saturation voltage. The device is rated for a maximum junction temperature of 175C.Product AttributesBrand: ToshibaStart of Commercial Production: 2012-03Certifications: RoHS CompatibleTechnical SpecificationsCharacteri
TOSHIBA GT40QR21 STA1 E D discrete IGBT transistor featuring RoHS compatibility and TO 3P N package
GT40QR21 Discrete IGBTsThe GT40QR21 is a silicon N-Channel IGBT designed for voltage-resonant inverter switching applications. It features a 6.5th generation IGBT with a monolithically integrated freewheeling diode (RC-IGBT), offering high-speed switching capabilities with typical fall time (tf) of 0.20 s and reverse recovery time (trr) of 0.60 s. The device boasts a low saturation voltage of 1.9 V (typ.) and a high junction temperature capability of 175C (max).Product
