"inverter igbt n channel"
Found 35 Products
750V silicon carbide fet Qorvo UJ4C075018K3S designed for high voltage power conversion applications
Product Overview The UJ4C075018K3S is a 750V, 18mW G4 SiC FET designed for high-efficiency power conversion. This device utilizes a unique cascode circuit configuration, integrating a normally-on SiC JFET with a Si MOSFET to achieve a normally-off SiC FET. Its standard gate-drive characteristics enable seamless integration as a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. The UJ4C075018K3S excels in applications requiring low gate
Silicon Carbide Field Effect Transistor Qorvo UJ4SC075006K4S 750V 5.9mW Ultra Low On Resistance Device
UnitedSiC UJ4SC075006K4S: 750V, 5.9mW SiC FET The UJ4SC075006K4S is a 750V, 5.9mW Silicon Carbide (SiC) Field-Effect Transistor (FET) designed for high-performance power applications. This device utilizes a unique 'cascode' circuit configuration, integrating a normally-on SiC JFET with a low-voltage Si MOSFET to achieve a normally-off SiC FET. Its standard gate-drive characteristics make it a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices.
High voltage silicon carbide fet Qorvo UJ4C075033B7S featuring cascode technology and low gate charge
Product Overview The UJ4C075033B7S is a 750V, 33mW G4 SiC FET designed for high-performance switching applications. It features a unique 'cascode' circuit configuration, combining a normally-on SiC JFET with a Si MOSFET to create a normally-off SiC FET. This device offers standard gate-drive characteristics, enabling it to serve as a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. Key advantages include ultra-low gate charge (QG = 37.8nC),
Silicon Carbide FET UJ4C075018K4S 750V 18m Ohm TO2474L Package Ideal for Power Switching Applications
Product Overview The UJ4C075018K4S is a 750V, 18m G4 SiC FET designed for high-efficiency power switching applications. Utilizing a unique cascode configuration combining a normally-on SiC JFET with a Si MOSFET, it offers normally-off operation with standard gate-drive characteristics. This makes it a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. Available in a TO-247-4L package, it features ultra-low gate charge, exceptional reverse
1700V Silicon Carbide FET Qorvo UF3C170400K3S designed for power conversion and inductive load switching
UnitedSiC UF3C170400K3S SiC FET Product Overview The UnitedSiC UF3C170400K3S is a 1700V, 410mW Silicon Carbide (SiC) FET device designed for high-efficiency power conversion applications. It features a unique cascode circuit configuration combining a normally-on SiC JFET with a Si MOSFET, resulting in a normally-off SiC FET with standard gate-drive characteristics. This design allows for a direct 'drop-in replacement' for existing Si IGBTs, Si FETs, SiC MOSFETs, or Si
Silicon Carbide FET UJ4C075033K3S 750V 33mW TO2473L Package Suitable for EV Charging and Motor Drives
Product Overview The UJ4C075033K3S is a 750V, 33mW G4 Silicon Carbide (SiC) FET, featuring a unique cascode circuit configuration that combines a normally-on SiC JFET with a Si MOSFET to create a normally-off device. This design offers standard gate-drive characteristics, making it a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. Available in a TO-247-3L package, it boasts ultra-low gate charge (QG = 37.8nC), exceptional reverse recovery
Cascode SiC FET transistor Qorvo UJ4C075023K4S 750V 23mW designed for power factor correction modules
Product Overview The UJ4C075023K4S is a 750V, 23mW G4 SiC FET designed for high-performance power applications. It features a unique cascode circuit configuration, combining a normally-on SiC JFET with a Si MOSFET to create a normally-off device. This design offers standard gate-drive characteristics, allowing it to serve as a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. The UJ4C075023K4S is available in a TO-247-4L package, providing
12A 600V Infineon IRAMS12UP60A integrated power hybrid IC with high speed driver and temperature monitor
Product DescriptionThe International Rectifier IRAMS12UP60A is a 12A, 600V Integrated Power Hybrid IC designed for advanced Appliance Motor Drive applications. It features open emitter pins and offers an extremely compact, high-performance AC motor-driver solution in a single isolated package. This HIC integrates IR's low VCE(on) Trench IGBT technology with a 3-phase high voltage, high-speed driver. Key features include a built-in high-precision temperature monitor, over
Compact power module Infineon IM12B10CC1XKMA1 designed for three phase AC motor and pump drive control
Product DescriptionThe CIPOS Maxi IM12B10CC1 is an Integrated Power Module designed to control three-phase AC motors and permanent magnet motors in variable speed drive applications. It integrates power and control components to enhance reliability, reduce PCB size, and lower system costs. This product is suitable for low power motor drives, pumps, fan drives, and active filters for HVAC systems. It offers excellent thermal performance, electrical isolation, EMI-safe control,
power discrete components featuring MICROCHIP APT2X30DQ60J for high voltage and high power electronics
Microchip High-Voltage Power Discretes and Modules Microchip offers a comprehensive range of high-voltage power discretes and modules, including mSiC MOSFETs, Power MOS 8 MOSFETs/FREDFETs, Low-Voltage Power MOS V MOSFETs/FREDFETs, Superjunction MOSFETs, Linear MOSFETs, and IGBTs. The portfolio also includes various diode types such as Fast, Ultra-Fast, Schottky, and mSiC Diodes. Additionally, high-voltage and high-frequency RF MOSFETs, along with drivers and driver-RF MOSFET
High Voltage Silicon Carbide Device onsemi UJ3C120150K3S with Ultra Low Gate Charge and On Resistance
Product DescriptionThis Silicon Carbide (SiC) Cascode JFET is an EliteSiC Power N-Channel device designed for high-performance switching applications. It utilizes a unique 'cascode' circuit configuration, combining a normally-on SiC JFET with a Si MOSFET to create a normally-off SiC FET. This design offers standard gate-drive characteristics, making it a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si super-junction devices. The UJ3C120150K3S, available in a
