Single FETs, MOSFETs
Power Switch MOSFET ElecSuper ESD2544 N Channel Device with Low Gate Charge and High Avalanche Rating
Product OverviewThe ESD2544 is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuits, offering high density cell design, low leakage current, and avalanche rating. This is a standard, Pb-free product.Product AttributesBrand: ElecSuperMaterial: Halogen freeCertifications: UL 94V-0Color: Not specifiedOrigin: Not specifiedTechnic
ElecSuper SI2301CDS T1 GE3 ES P Channel MOSFET Designed for Low Gate Charge and Power Switching
Product OverviewThe SI2301CDS-T1-GE3-ES is a P-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This device is Pb-free and halogen-free.Product AttributesBrand: ElecSuperPart Number: SI2301CDS-T1-GE3-ESPackage: SOT-23Material: Halogen freeCertifications: UL 94V-0Packing: Tape & Reel (3,000 PCS per reel
Power Switch and DC DC Conversion P Channel MOSFET ElecSuper ESJ2307 with Avalanche Rated Construction
Product OverviewThe ESJ2307 is a P-Channel enhancement MOS Field Effect Transistor from ElecSuper, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuit applications, offering fast switching, high-density cell design, and a reliable, rugged, avalanche-rated construction with low leakage current.Product AttributesBrand: ElecSuperModel: ESJ2307Package: SOT-23Material: Halogen
Power Switch MOSFET ElecSuper LN2302LT1G ES N Channel Device with Low Gate Charge and SOT 23 Package
Product OverviewThe LN2302LT1G-ES is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free.Product AttributesBrand: ElecSuperModel: LN2302LT1G-ESPackage: SOT-23Material: Halogen freeCertifications: UL 94V-0Color: Not specifiedOrigin: Not specifiedTechnical Specification
P channel MOSFET for synchronous buck converters FETek FKBA3115 offers superior switching and thermal performance
Product OverviewThe FKBA3115 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function reliability approved, featuring super low gate charge and excellent CdV/dt effect decline due to its advanced high cell density trench technology.Product AttributesBrand: FETek Technology
Trench technology MOSFET ElecSuper ES2N7002KDW1T1G providing low gate charge and strong ESD protection for power devices
Product OverviewThe ES2N7002KDW1T1G is an N-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for applications such as DC-DC conversion, power switching, and charging circuits, offering high density cell design for low on-resistance and ESD protection.Product AttributesBrand: ElecSuperPart Number: ES2N7002KDW1T1GPackage: SOT-363Material: Halogen freeCertifications: UL 94V-0Flammability Rating: UL 94V
High reliability N Channel MOSFET ElecSuper ESBSS138LT1G for power switch and charging circuit solutions
Product OverviewThe ESBSS138LT1G is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology for excellent RDS(ON) with low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free.Product AttributesBrand: ElecSuperModel: ESBSS138LT1GPackage: SOT-23Material: Halogen freeCertifications: UL 94V-0Color: Not specifiedOrigin: Not specifiedTechnical SpecificationsParameterSym
252 package N channel MOSFET ElecSuper ES20N06 60V suitable for power switch DC DC conversion and charging
SuperMOS TO-252 60V N-channel MOSFETThe ES20N06 is an N-Channel enhancement MOS Field Effect Transistor designed for DC-DC conversion, power switch, and charging circuits. It utilizes advanced technology to achieve excellent RDS(ON) with low gate charge, offering high density cell design for low on-resistance, reliability, and ruggedness. This device is avalanche rated and features low leakage current, making it suitable for PWM applications, load switches, and power
Low Gate Charge N Channel MOSFET ElecSuper BSS123NH6433XTMA1 Suitable for Power Switching Applications
Product OverviewThe BSS123NH6433XTMA1 is an N-Channel enhancement mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. This standard product is Pb-free and halogen-free.Product AttributesBrand: ElecSuperProduct Code: BSS123NH6433XTMA1Material: Halogen freeCertifications: UL 94V-0Origin: Not specifiedColor: Not specifiedTechnical SpecificationsParamet
SuperMOS P channel MOSFET ElecSuper ESP3407LT1G with high cell density and excellent switching speed
ESP3407LT1G SuperMOS P-channel MOSFETThe ESP3407LT1G is a P-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for applications such as DC-DC conversion, power switching, and charging circuits, offering fast switching, high cell density for low resistance, and a reliable, rugged design.Product AttributesBrand: ElecSuperProduct Name: SuperMOSPackage: SOT-23Material: Halogen free, Pb-freeCertifications:
Power Switching MOSFET ElecSuper ESGNF10R90 N Channel with Low Gate Charge and High Avalanche Rating
Product OverviewThe ESGNF10R90 is an N-Channel enhancement mode MOSFET featuring advanced shielded gate trench technology for excellent RDS(ON) and low gate charge. It is designed for applications such as DC-DC conversion, power switching, and charging circuits, offering high density cell design, reliability, and avalanche rating.Product AttributesBrand: SuperMOS (ElecSuper)Origin: Not specifiedMaterial: Halogen freeCertifications: UL 94V-0Technical SpecificationsParameterSym
P Channel MOSFET ElecSuper IRLML9301TRPBF ES with High Density Cell Design and Low RDS ON Resistance
Product OverviewThe IRLML9301TRPBF(ES) is a P-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This device is Pb-free and features a high-density cell design for low RDS(on), fast switching, and is avalanche rated.Product AttributesBrand: ElecSuperMaterial: Halogen freeCertifications: UL 94V-0Origin:
ElecSuper IRLML6344TRPBF ES N Channel MOSFET suitable for power switching and DC DC conversion tasks
Product OverviewThe IRLML6344TRPBF-ES is an N-Channel enhancement mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. This standard product is Pb-free and Halogen free.Product AttributesBrand: ElecSuperOrigin: Not specifiedMaterial: Halogen freeColor: Not specifiedCertifications: UL 94V-0Technical SpecificationsParameterSymbolTest ConditionsMin.Typ
SOT 363 Package N Channel MOSFET ElecSuper BSS138AKDW with Low Leakage Current and High Reliability
Product OverviewThe BSS138AKDW is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuits, offering a reliable and rugged solution with low leakage current.Product AttributesBrand: SuperMOSMaterial: Halogen free, Pb-freeCertifications: UL 94V-0Package: SOT-363Technical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max
Low Gate Charge MOSFET ElecSuper ES2310 Ideal for Power Switching and DC DC Converter Applications
Product OverviewThe ES2310 is an N-Channel enhancement mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. This standard product is Pb-free and Halogen-free.Product AttributesBrand: ElecSuperModel: ES2310Package: SOT-23Material: Halogen freeCertifications: UL 94V-0Color: Not specifiedOrigin: Not specifiedTechnical SpecificationsParameterSymbolTest
Low Gate Charge MOSFET ElecSuper ESEP1520K Ideal for Power Switch and Charging Circuit Applications
Product OverviewThe ESEP1520K is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This device is Pb-free and Halogen free.Product AttributesBrand: ElecSuperModel: ESEP1520KMaterial: Halogen freeCertifications: UL 94V-0Color: Not specifiedOrigin: Not specifiedTechnical SpecificationsParameterSymbol
power switching ElecSuper IRLML0030TRPBF ES MOSFET with trench technology and low RDS ON resistance
Product OverviewThe IRLML0030TRPBF-ES is an N-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for applications such as DC-DC conversion, power switching, and charging circuits, offering a reliable and rugged solution with a high-density cell design.Product AttributesBrand: ElecSuperProduct Series: SuperMOSPackage: SOT-23Material: Halogen free, Pb-freeCertifications: UL 94V-0Origin: ElecSuper
Fast switching complementary MOSFET ElecSuper ESD3045DN33 with low RDSON and performance in circuits
SuperMOS PDNF5*6-8L 30V Complementary MOSFET The ESD3045DN33 utilizes advanced trench technology MOSFETs to deliver excellent RDS(ON) and low gate charge. These complementary MOSFETs are suitable for forming level-shifted high-side switches and a wide range of other applications. Product Attributes Brand: ElecSuper Material: Halogen free Certifications: UL 94V-0 Technical Specifications Parameter N-channel Typ. P-channel Typ. Unit Features N-channel RDS(ON) @VGS=10V 18m - N
power switching ElecSuper RUM001L02T2CL ES N Channel MOSFET featuring low gate charge and resistance
Product OverviewThe RUM001L02T2CL(ES) is an N-Channel enhancement mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. This standard product is Pb-free and Halogen free.Product AttributesBrand: ElecSuperModel: RUM001L02T2CL(ES)Package: SOT-723Material: Halogen freeCertifications: UL 94V-0Color: Not specifiedOrigin: Not specifiedTechnical Specificatio
Low RDS ON P Channel MOSFET ElecSuper SI2319 ES ideal for charging and power switching applications
Product OverviewThe SI2319(ES) is a P-Channel enhancement mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it ideal for DC-DC conversion, power switching, and charging circuits. Its high-density cell design ensures low RDS(on), while features like fast switching, avalanche rating, and low leakage current contribute to its reliability and ruggedness.Product AttributesBrand: ElecSuperPart Number: SI2319(ES)Package: SOT
