Single IGBTs
600V IGBT Infineon IGP06N60T with low saturation voltage and short circuit withstand time of 5 seconds
Product OverviewThe IGP06N60T is a TRENCHSTOP Series Low Loss IGBT designed for 600V applications. It features very low VCE(sat) of 1.5V (typ.), a maximum junction temperature of 175C, and a short circuit withstand time of 5s. This IGBT utilizes TRENCHSTOP and Fieldstop technology, offering very tight parameter distribution, high ruggedness, and temperature-stable behavior. It also boasts low EMI and is qualified according to JEDEC standards for target applications. The
switching MOSFET HXY MOSFET RGSX5TS65HRC11-HXY designed for UPS EV charger and solar inverter systems
Product OverviewThe RGSX5TS65HRC11 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for use in UPS, EV-Chargers, Solar String Inverters, and Energy Storage Inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: RGSX5TS65HRC11Package: TO
HXY MOSFET IGW40N60H3 HXY IGBT Featuring Low Saturation Voltage and Positive Temperature Coefficient
Product OverviewThe IGW40N60H3 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in Vcesat, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, this device is suitable for UPS, EV-Charger, and Solar String Inverter applications.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDOrigin: Shenzhen
IGBT transistor module HXY MOSFET IRGP4790-EPBF-HXY suitable for UPS EV chargers and solar inverters
Product OverviewThe IRGP4790-EPBF is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for use in UPS, EV-Chargers, Solar String Inverters, and Energy Storage Inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: IRGP4790-EPBFPackage: TO-247Origin:
Durable HXY MOSFET STGWA100H65DFB2-HXY IGBT with TO-247 Package and High Diode Forward Current Rating
Product Overview The STGWA100H65DFB2 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency applications. It features high input impedance, low saturation voltage (VCE(SAT)), low switching losses, and rugged transient reliability. This IGBT is suitable for demanding industrial applications including Industrial UPS, EV-Charging, String inverters, and Welding. Product Attributes Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD Origin: Shenzhen HuaXuanYang
Advanced Trench Fieldstop IGBT4 Infineon FS25R12W1T4 B11 with compact design and thermal management
Product OverviewThe FS25R12W1T4_B11 is an EasyPACK module featuring Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode with PressFIT and NTC. It offers low switching losses, low VCEsat with a positive temperature coefficient, and a compact design with an Al2O3 substrate for low thermal resistance. This module is suitable for applications such as air conditioning, motor drives, servo drives, and UPS systems.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial
Industrial MOSFET HXY MOSFET IGW75N65H5XKSA1-HXY with Low Saturation Voltage and High Pulsed Current
Product OverviewThe IGW75N65H5XKSA1 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. Its maximum junction temperature is 175C.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: IGW75N65H5XKSA1Package: TO-247Origin: Shenzhen HuaXuanYang Electronics CO.,LTDPacking: 30PCSTechni
Power Switching HXY MOSFET IXGH40N120A2-HXY IGBT Module for EV Chargers Solar Inverters and UPS Systems
Product OverviewThe IXGH40N120A2 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for applications such as UPS, EV-chargers, and solar string inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: IXGH40N120A2Origin: Shenzhen HuaXuanYang
High speed switching IGBT JIAENSEMI JNG25T65FS1 650V 25A TO220F package for motor control applications
Product OverviewJIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as motor control, general inverters, and other soft switching applications. The JNG25T65FS1 features 650V, 25A, high-speed switching capabilities, and soft current turn-off waveforms, contributing to higher system efficiency.Product AttributesBrand: JIAENModel: JNG25T65FS1Package: TO-220FTechnical SpecificationsParameterSymbolConditionsMin.Typ.Max.UnitsIGBT Electrical
Power semiconductor device HXY MOSFET IXXH40N65B4H1-HXY suitable for UPS EV Chargers and solar inverters
Product OverviewThe IXXH40N65B4H1 is an Insulated Gate Bipolar Transistor (IGBT) from HUAXUANYANG HXY ELECTRONICS CO.,LTD. It offers easy paralleling capability due to its positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, this device is suitable for applications such as UPS, EV-Chargers, and Solar String Inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDOrigin:
Durable power transistor HXY MOSFET IRGP4063DPBF-HXY for boost converters and portable power stations
Product OverviewThe IRGP4063DPBF is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications such as UPS, motor drives, boost converters, and portable power stations, offering features like a positive temperature coefficient, fast switching, low VCE(sat),
High voltage IGBT module HXY MOSFET NGTB30N135IHRWG-HXY 1350V 30A low saturation voltage for EV charger and UPS systems
Product OverviewThe NGTB30N135IHRWG is an Insulated Gate Bipolar Transistor (IGBT) from HUAXUANYANG HXY ELECTRONICS CO.,LTD. It offers easy paralleling capability due to its positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, it is suitable for demanding applications such as UPS, EV-Chargers, Solar String Inverters, and Energy Storage Inverters.Product AttributesBrand: HUAXUANYANG HXY
Durable power switching device HXY MOSFET IRGP4263D-EPBF-HXY IGBT with low EMI and high reliability
Product OverviewThe IRGP4263D-EPBF is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for UPS, EV-Charger, and Solar String Inverter applications.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: IRGP4263D-EPBFPackage: TO-247Origin: Shenzhen
HXY MOSFET IRG8P60N120KD-EPBF-HXY IGBT device with RoHS compliance and performance in TO-247 package
Product OverviewThe IRG8P60N120KD-EPBF is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is AEC-Q101 Qualified and designed for high-temperature operation up to 175. Available in RoHS compliant, Halogen Free, and Green Devices. This product is supplied in a TO-247 package and
650 Volt 70 Amp IGBT HXY MOSFET MIW40N65RA-BP-HXY TO247 Package Designed for Solar Inverters and UPS
Product OverviewThe MIW40N65RA-BP is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It offers easy paralleling capability due to a positive temperature coefficient in Vcesat, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, this device is suitable for UPS, EV-chargers, and solar string inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: MIW40N65RA-BPOrigin:
650V Collector Emitter Voltage IGBT HXY MOSFET IXYH75N65C3D1-HXY with TO247 Package and Halogen Free
Product OverviewThe IXYH75N65C3D1 is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction loss, improving switching characteristics, and increasing avalanche energy. It is designed for applications requiring high efficiency and reliability.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: IXYH75N65C3D1Origin: Shenzhen, ChinaPackage Type: TO
power transistor HXY MOSFET IRG7PH46U-EP-HXY offering improved switching speed and thermal stability
Product OverviewThe IRG7PH46U-EP is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction loss, improving switching characteristics, and increasing avalanche energy. It is designed for applications requiring high reliability and robust performance, featuring a positive temperature coefficient, fast switching, low VCE(sat), and an operating temperature of up to
650V 50A IGBT RGTH00TS65GC11 HXY MOSFET with Low EMI Low Gate Charge and Easy Paralleling Capability
Product OverviewThe RGTH00TS65GC11 is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for applications such as UPS, EV-Chargers, and Solar String Inverters.Product AttributesBrand: HUAXUANYANG ELECTRONICS CO.,LTDModel: RGTH00TS65GC11Package: TO-247Origin:
1200V 50A IGBT Transistor HXY MOSFET APT50GF120B2RG-HXY for High Power Solar Inverter EV Charger and UPS
Product OverviewThe APT50GF120B2RG is a 1200V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. It features easy paralleling capability due to its positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for use in UPS, EV-Chargers, and Solar String Inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: APT50GF120B2RGOrigin: Shenzhen HuaXuanYang Electronics
insulated gate bipolar transistor HXY MOSFET AOK40B65M3 with low gate charge and high voltage rating
Product OverviewThe AOK40B65M3 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to its positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, this device is suitable for UPS, EV-Chargers, and Solar String Inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDOrigin: Shenzhen HuaXuanYang
