"n channel igbt"
Found 68 Products
Reliable And Rugged Inverter IGBT Enhancement Mode N Channel
Reliable and Rugged Inverter IGBT Enhancement Mode N Channel Features Positive temperature coefficient Fast Switching Low VCE(sat) Reliable and Rugged APPLICATIONS UPS Motor drives Boost Portable power station
Toshiba GT20N135SRA S1E Discrete N Channel IGBT with TO 247 Package and Integrated Freewheeling Diode
Product OverviewThe GT20N135SRA is a discrete Silicon N-Channel IGBT from Toshiba, designed for high-speed switching applications. It features a 6.5th generation IGBT with an integrated freewheeling diode (FWD), offering low saturation voltage and high junction temperature capabilities. This product is dedicated to voltage-resonant inverter switching, soft switching, induction cooktops, and home appliance applications.Product AttributesBrand: ToshibaModel: GT20N135SRAType:
Jilin Sino Microelectronics JT015N065FED N channel IGBT transistor ideal for UPS power supply design
Product OverviewThe JT015N065FED is an N-channel Insulated Gate Bipolar Transistor (IGBT) designed for general-purpose inverters and UPS power supplies. It features low gate charge, Trench FS Technology, and a typical saturation voltage of 1.6V at 15A and 25C. This RoHS-compliant product is available in a TO-220MF package.Product AttributesBrand: Jilin Sino-microelectronics Co., LtdOrigin: ChinaMaterial: N-channel IGBTColor: Not specifiedCertifications: RoHSHalogen Free:
N Channel IGBT Power Module onsemi FGY100T120SWD 1200 Volt 100 Amp with Gen7 Diode in TO247 Package
Product Overview The FGY100T120SWD is a 1200 V, 100 A N-Channel IGBT Power Module utilizing novel Field Stop 7th generation IGBT technology and a Gen7 Diode in a TO247 3-lead package. It offers optimized performance with low switching and conduction losses, making it ideal for high-efficiency operations in applications such as Solar, UPS, and Energy Storage Systems (ESS). Product Attributes Brand: onsemi Technology: Field Stop VII (FS7) Package: TO247-3L Certifications: RoHS
Silicon N Channel IGBT TOSHIBA GT40WR21Q Featuring Integrated Freewheeling Diode and RoHS Compliance
Product OverviewThe GT40WR21 is a silicon N-Channel IGBT designed for voltage-resonant inverter switching applications. It features 6.5th generation technology, a monolithic RC-IGBT with an integrated freewheeling diode, high-speed switching capabilities, low saturation voltage, and a high junction temperature rating. This product is dedicated to specific inverter applications and should not be used for other purposes.Product AttributesBrand: ToshibaProduct Type: Discrete
High speed switching TOSHIBA GT30J122A STA1 E D Silicon N Channel IGBT for inverter and PFC circuits
Product OverviewThe GT30J122A is a Silicon N-Channel IGBT from Toshiba, designed for current-resonant inverter switching and partial-switching power factor correction (PFC) applications. It features high-speed switching with a typical fall time of 0.20 s and a low saturation voltage of 1.7 V (typ.) at 50 A collector current. This 4th generation enhancement-mode IGBT is packaged in a TO-3P(N) format.Product AttributesBrand: ToshibaCommercial Production Start: 2010-06Certificat
Current resonant inverter switching solution featuring TOSHIBA GT50JR22 Silicon N Channel IGBT device
Product OverviewThe GT50JR22 is a Silicon N-Channel IGBT designed for dedicated current-resonant inverter switching applications. It features 6.5th generation technology, high-speed switching capabilities with a typical fall time of 0.05 s, and a low saturation voltage of 1.55 V (typ.). The device integrates a Freewheeling Diode (FWD) monolithically, offering enhancement mode operation and a high junction temperature capability of 175C (max).Product AttributesBrand:
Ignition Coil Driver onsemi ISL9V3040S3ST N Channel IGBT with Enhanced SCIS Energy and Voltage Clamp
Product OverviewThe ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and ISL9V3040S3 are next-generation ignition IGBTs designed for automotive ignition circuits, specifically as coil drivers. They offer superior SCIS capability in space-saving D-Pak (TO-252), D-Pak (TO-263), TO-262, and TO-220 plastic packages. Internal diodes provide voltage clamping, eliminating the need for external components. EcoSPARK devices can be custom-made to specific clamp voltages.Product AttributesBrand
N-Channel Enhancement Mode Power IGBT 15A 650V For General Inverter
15A 650V N-Channel Enhancement Mode Power IGBT For General Inverter Q1.Who are we? A:We are based in Guangdong, China,factory start from 2012,is a national high-tech enterprise that focuses on packaging and testing of power semiconductor devices.currently has more than 180 has more than 180 employees and more than 10000 square meters area.We provide over 600 KK high-quality power semiconductor device per annum. Q2.What is your product line? A:Existing main production lines
High Speed Switching Silicon N Channel IGBT TOSHIBA GT60M324Q with 175C Maximum Junction Temperature
Product OverviewThe TOSHIBA GT60M324 is a Sixth Generation Insulated Gate Bipolar Transistor (IGBT) made of Silicon N Channel. It is designed for consumer applications and voltage resonance inverter switching applications. Key advantages include a built-in Fast Recovery Diode (FRD), high-speed switching capabilities with a typical fall time of 0.11s, low saturation voltage of 1.70V (typ.), and a high junction temperature rating of 175C (max). It is RoHS compatible.Product
Power Dissipation Optimized N Channel IGBT onsemi FGHL60T120RWD with Field Stop VII and Integrated SCR
Product OverviewThe FGHL60T120RWD is an N-Channel, Field Stop VII (FS7) IGBT with an integrated SCR in a TO247-3L package. Utilizing novel field stop 7th generation IGBT technology and Gen7 Diode, it offers optimal performance with low conduction losses and good switching controllability for high-efficiency operation. It is suitable for applications such as motor control, UPS, data center, and high-power switching.Product AttributesBrand: onsemiCertifications: RoHS CompliantT
Logic Level Gate Drive N Channel IGBT onsemi FGD3040G2 F085 for Automotive Coil On Plug Applications
Product OverviewThe FGB3040G2-F085 / FGD3040G2-F085 / FGP3040G2-F085 / FGI3040G2-F085 are N-Channel Ignition IGBTs from the EcoSPARK2 series. These devices offer a high Self Clamping Inductive Switching (SCIS) energy capability of 300mJ at 25C and feature a logic-level gate drive. They are qualified to AEC Q101 standards, RoHS compliant, and suitable for automotive ignition coil driver circuits and coil-on-plug applications.Product AttributesBrand: ON SemiconductorProduct
