"n channel igbt"

15A 1200V Inverter IGBT Short Circuit Withstands Time 10S For Motor Driver N-Channel Enhancement Mode Power IGBT LGT15N120B FEATURES Trench and field-stop technology Low collector to emitter saturation voltage Short circuit withstands time 10s High ruggedness performance Easy parallel switching capability APPLICATIONS Inverter TO-247 Motor driver Q1.Who are we? A:We are based in Guangdong, China,factory start from 2012,is a national high-tech enterprise that

Product OverviewThe GT30N135SRA is a discrete Silicon N-Channel IGBT designed for voltage-resonant inverter switching, soft switching applications, and induction cooktops and home appliances. This 6.5th generation RC-IGBT integrates a freewheeling diode (FWD) monolithically. It offers high-speed switching with a typical IGBT fall time of 0.25 s and a low saturation voltage of 1.65 V (typ.). The device supports a high junction temperature of 175 C (max) and is sensitive to

Product OverviewThe HGTG11N120CND is a Non-Punch Through (NPT) Series N-Channel IGBT with an integrated Anti-Parallel Hyperfast Diode. This device combines the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor, making it ideal for high voltage switching applications at moderate frequencies where low conduction losses are crucial. Applications include AC and DC motor controls, power supplies, and drivers for solenoids, relays, and

GT40QR21 Discrete IGBTsThe GT40QR21 is a silicon N-Channel IGBT designed for voltage-resonant inverter switching applications. It features a 6.5th generation IGBT with a monolithically integrated freewheeling diode (RC-IGBT), offering high-speed switching capabilities with typical fall time (tf) of 0.20 s and reverse recovery time (trr) of 0.60 s. The device boasts a low saturation voltage of 1.9 V (typ.) and a high junction temperature capability of 175C (max).Product

Product OverviewThe GT50JR22 is a discrete Silicon N-Channel IGBT designed for current-resonant inverter switching applications. It features a 6.5th generation IGBT with an integrated Freewheeling Diode (FWD), offering high-speed switching capabilities and low saturation voltage. The device is rated for a maximum junction temperature of 175C.Product AttributesBrand: ToshibaStart of Commercial Production: 2012-03Certifications: RoHS CompatibleTechnical SpecificationsCharacteri

ON Semiconductor ISL9V5045S3ST_F085 N-Channel Ignition IGBTThe ON Semiconductor ISL9V5045S3ST_F085 is a next-generation ignition IGBT designed for automotive ignition circuits, specifically as a coil driver. It offers outstanding SCIS (Self-Clamped Inductive Switching) capability in the industry-standard D2-Pak (TO-263) plastic package. Internal diodes provide voltage clamping without external components, and devices can be custom-made to specific clamp voltages.Product

Product OverviewThe FGHL40T120SWD is a N-Channel, Field Stop VII (FS7) IGBT with a non-SCR design, utilizing the latest IGBT technology and Gen7 Diode in a TO247 3-lead package. It offers optimal performance with low switching and conduction losses, making it ideal for high-efficiency operations in applications such as Solar, UPS, and Energy Storage Systems (ESS).Product AttributesBrand: onsemiCertifications: RoHS CompliantTechnical SpecificationsParameterSymbolValueUnitNotes

Product Overview The FGB3245G2-F085 and FGD3245G2 are N-channel Ignition IGBTs from ON Semiconductor's EcoSPARK-2 technology, designed for automotive ignition coil driver circuits and coil-on-plug applications. This technology eliminates the need for external protection circuitry and is optimized for harsh automotive ignition environments, offering excellent Vsat and SCIS Energy capabilities even at elevated temperatures. They feature a logic-level gate drive with ESD

Product Overview The S1M040120D is a 1200V Silicon Carbide (SiC) Power MOSFET designed for high-speed switching applications. It offers very low switching losses, IGBT-compatible driving voltage, and fully controllable dv/dt, making it suitable for applications requiring high efficiency and reduced cooling efforts. Its robust design also features a high blocking voltage with low on-resistance and a fast intrinsic diode with low reverse recovery. Key benefits include increased

Product OverviewThe EcoSPARK 2 Ignition IGBT is a high-performance N-Channel Ignition IGBT designed for automotive ignition coil driver circuits. It offers a high SCIS Energy rating of 300 mJ at 25C, logic-level gate drive, and is AEC-Q101 Qualified and PPAP Capable. This device is Pb-Free and RoHS Compliant, making it suitable for high current ignition systems and coil-on-plug applications.Product AttributesBrand: EcoSPARK 2Origin: Semiconductor Components Industries, LLC

Product Overview The S1M075120D2 is a 1200V Silicon Carbide (SiC) Power MOSFET designed for high-speed switching applications. It offers very low switching losses, IGBT-compatible driving voltage, and fully controllable dv/dt, combined with high blocking voltage and low on-resistance. The integrated fast intrinsic diode with low reverse recovery (Qrr) contributes to temperature-independent turn-off switching losses. This RoHS and halogen-free compliant component is ideal for

Product OverviewThe YSP040N010T1A, YSK038N010T1A, and YSF040N010T1A are 100V N-Channel Power MOSFETs designed for high-efficiency applications. They feature extremely low on-resistance (RDS(on)) and an excellent Qg x RDS(on) product (FOM), making them ideal for demanding power management tasks. These MOSFETs are qualified according to JEDEC criteria and are 100% UIL Tested, ensuring reliability and performance in motor control, battery management, UPS, and DC/DC converter