"n channel igbt"
Found 68 Products
1200 Volt Silicon Carbide MOSFET Microchip MSC080SMA120B for Switching in PV Inverters and Motor Drives
Product OverviewThe Microchip MSC080SMA120B is a 1200 V, 80 m SiC N-Channel Power MOSFET designed to enhance performance and reduce the total cost of ownership for high-voltage applications. Leveraging silicon carbide technology, it offers advantages over traditional silicon MOSFETs and IGBTs, including high efficiency, faster switching speeds, and improved thermal capabilities. This device is suitable for demanding applications such as PV inverters, industrial motor drives,
Renesas 2sk2225 80 e t2 mos fet featuring 1500v vdss and fast switching speed for power applications
Product Overview The 2SK2225-80-E is a high-speed power switching MOS FET featuring a high breakdown voltage of 1500V and a drain current of 2A. It offers low drive current and is suitable for applications requiring fast switching characteristics. This component is classified under the "Standard" quality grade, making it appropriate for a wide range of electronic equipment. Product Attributes Brand: RENESAS Quality Grade: Standard Package Codes: PRSS0003ZP-A, PRSS0003ZD-A
Silicon Carbide MOSFET Model S1M040120H 1200V Designed for EV Battery Chargers and On Board Chargers
Product Overview The S1M040120H is a 1200V Silicon Carbide (SiC) Power MOSFET designed for high-speed switching applications. It offers very low switching losses, IGBT-compatible driving voltage, and fully controllable dv/dt, leading to reduced cooling efforts, improved efficiency, and increased power density. This MOSFET is ideal for on-board chargers, EV battery chargers, booster/DC-DC converters, and switch-mode power supplies. Product Attributes Brand: SiC (Sichain
1200V Silicon Carbide Power MOSFET Sichainsemi SG2M040120JH Low Reverse Recovery Low On Resistance Device
Product Overview The SG2M040120JH is a 1200V Silicon Carbide (SiC) Power MOSFET designed for high-speed switching applications. It offers very low switching losses, IGBT-compatible driving voltage, and fully controllable dv/dt. This MOSFET features a high blocking voltage with low on-resistance and a fast intrinsic diode with low reverse recovery. Its performance characteristics lead to reduced cooling efforts, improved efficiency, increased power density, and the ability to
SG1M160120J Silicon Carbide Power MOSFET 1200V 21A TO2637L Package with Low Reverse Recovery Charge
Product Overview The SG1M160120J is a 1200V Silicon Carbide (SiC) Power MOSFET designed for high-speed switching applications. It offers very low switching losses, IGBT-compatible driving voltage (15V for turn-on), and fully controllable dv/dt. This device boasts high blocking voltage with low on-resistance, a fast intrinsic diode with low reverse recovery charge (Qrr), and temperature-independent turn-off switching losses. Its benefits include reduced cooling effort and
Sichainsemi S1M075120J2 Silicon Carbide Power MOSFET 1200V 39A Ideal for EV Battery Charging Systems
Product Overview The S1M075120J2 is a 1200V Silicon Carbide (SiC) Power MOSFET designed for high-speed switching applications. It offers very low switching losses, IGBT-compatible driving voltage, and fully controllable dv/dt. Key benefits include reduced cooling requirements, improved efficiency, increased power density, and the ability to operate at higher system switching frequencies. This MOSFET is ideal for on-board chargers, EV battery chargers, booster/DC-DC converters
1200V Silicon Carbide MOSFET KNSCHA KN3M80120K Featuring Low Reverse Recovery Qrr and RoHS Compliance
Product OverviewThis 1200V Silicon Carbide Power MOSFET (TO-247-4L package) offers high-speed switching with very low switching losses, making it suitable for demanding power applications. It features IGBT-compatible driving voltage, fully controllable dv/dt, and high blocking voltage with low on-resistance. The fast intrinsic diode with low reverse recovery (Qrr) contributes to improved efficiency and reduced cooling requirements. It is halogen-free and RoHS compliant
UF4SC120030K4S 1200V SiC FET combining normally on JFET and MOSFET for power switching applications
SiC FET UF4SC120030K4S Product Overview The UF4SC120030K4S is a 1200V, 30mW G4 SiC FET designed for high-performance switching applications. It utilizes a unique 'cascode' circuit configuration, combining a normally-on SiC JFET with a Si MOSFET to achieve a normally-off SiC FET device with standard gate-drive characteristics. This allows for seamless integration as a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, or Si superjunction devices. The UF4SC120030K4S excels
power switching device Qorvo UJ4C075023K3S 750V 23mW SiC FET for induction heating and EV charging
UnitedSiC UJ4C075023K3S 750V, 23mW SiC FET Product Overview The UnitedSiC UJ4C075023K3S is a 750V, 23mW G4 SiC FET designed for high-performance power applications. Utilizing a unique 'cascode' circuit configuration, it combines a normally-on SiC JFET with a Si MOSFET to achieve a normally-off device with standard gate-drive characteristics. This allows for a direct 'drop-in replacement' for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. The device excels in
750V 44mW Silicon Carbide FET Qorvo UJ4C075044K3S TO247 Package for Power Conversion and Motor Control
Silicon Carbide Field-Effect Transistor (SiC FET) - UJ4C075044K3S Product Overview The UJ4C075044K3S is a 750V, 44mW G4 SiC FET designed for high-performance power applications. It utilizes a unique 'cascode' circuit configuration, combining a normally-on SiC JFET with a Si MOSFET to create a normally-off SiC FET. This design offers standard gate-drive characteristics, enabling it to serve as a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction
750V SiC FET Device Featuring Low On Resistance Qorvo UJ4C075044B7S Ideal for Power Conversion Systems
Product Overview The UJ4C075044B7S is a 750V, 44mW G4 SiC FET, engineered with a unique 'cascode' circuit configuration combining a normally-on SiC JFET with a Si MOSFET to achieve a normally-off SiC FET device. This design offers standard gate-drive characteristics, making it a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. It excels in applications requiring fast switching and standard gate drive, such as EV charging, switch mode power
SiC FET Qorvo UJ3C065080T3S featuring excellent reverse recovery and compatibility with standard gate drivers
SiC FET 650V - 80m Product Overview This SiC FET device is built upon a unique 'cascode' circuit configuration, integrating a normally-on SiC JFET with a Si MOSFET to create a normally-off SiC FET. Its standard gate-drive characteristics enable it to serve as a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. Available in a TO-220-3L package, this device offers ultra-low gate charge and exceptional reverse recovery characteristics, making
