"n channel igbt"

Product Overview The S1M075120H1 is a 1200V Silicon Carbide (SiC) Power MOSFET designed for high-speed switching applications. It offers very low switching losses, IGBT-compatible driving voltage, and fully controllable dv/dt. Key benefits include reduced cooling effort and requirements, efficiency improvement, increased power density, and the ability to operate at higher system switching frequencies. This MOSFET is ideal for applications such as on-board chargers/PFC, EV

Microsemi MSC015SMA070B Silicon Carbide N-Channel Power MOSFET The Microsemi MSC015SMA070B is a 700 V, 15 m Silicon Carbide (SiC) N-Channel Power MOSFET designed to enhance performance and reduce the total cost of ownership for high-voltage applications compared to traditional silicon MOSFET and IGBT solutions. Its key features include low capacitances, fast switching speeds, stable operation at high junction temperatures (up to 175 C), a fast and reliable body diode, and

UJ4SC075011K4S: 750V, 11m G4 SiC FET Product Overview The UJ4SC075011K4S is a 750V, 11m G4 Silicon Carbide (SiC) FET. It utilizes a unique cascode circuit configuration, combining a normally-on SiC JFET with a Si MOSFET to achieve a normally-off SiC FET device. This design offers standard gate-drive characteristics, making it a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. Available in the TO-247-4L package, this FET features ultra-low

100V N-Channel Power MOSFETThis 100V N-Channel Power MOSFET series, including YSP040N010T1A, YSK038N010T1A, and YSF040N010T1A, offers extremely low on-resistance (RDS(on)) and excellent Qg x RDS(on) product (FOM). These devices are qualified according to JEDEC criteria and are 100% UIL Tested, making them ideal for applications such as motor control and drive, battery management, UPS (Uninterruptible Power Supplies), and DC/DC converters.Product AttributesBrand: LU SemiOrigin

Product OverviewThe MSC015SMA070B is a 700 V, 15 m Silicon Carbide (SiC) N-Channel Power MOSFET from Microsemi. It offers enhanced performance over traditional silicon MOSFETs and IGBTs, leading to lower total cost of ownership for high-voltage applications. Key benefits include high efficiency for compact systems, ease of driving and paralleling, improved thermal capabilities, and elimination of external freewheeling diodes. This device is designed for applications such as

Product OverviewThe CIPOS Maxi IM818 product group integrates power and control components for three-phase AC and permanent magnet motors in variable speed drive applications. It is designed for low power motor drives (GPI, Servo drives), pumps, fan drives, and active filters for HVAC. The product offers excellent thermal performance, electrical isolation, EMI-safe control, and overload protection, featuring 1200V TRENCHSTOP IGBTs, Emitter Controlled diodes, and an optimized

Product OverviewThe CIPOS Control Integrated Power System (IKCM10H60GA) is a Dual In-Line Intelligent Power Module designed for 3-phase bridge applications. It integrates power and control components to enhance reliability, reduce PCB size, and lower system costs. This module is optimized for high switching frequency applications (around 15kHz), such as washing machines and low power motor drives, offering excellent electrical performance with TRENCHSTOP IGBTs and an SOI gate

Product OverviewThe CIPOS Control Integrated Power System (IKCM30F60GD) is a dual in-line intelligent power module designed for controlling three-phase AC and permanent magnet motors in variable speed drives. It integrates power and control components to enhance reliability, reduce PCB size, and lower system costs. Key features include TRENCHSTOP IGBTs, rugged SOI gate driver technology with excellent transient and negative voltage stability, integrated bootstrap functionalit

Product Overview The TPM2003C is a high-voltage, high-current 7-channel low-side Darlington bipolar junction transistor array. Designed for driving inductive loads such as relays, stepper motors, DC motors, solenoids, and valves, this device offers a 500-mA rated channel current and high-voltage outputs up to 50 V. It features power efficiency with low output impedance, an extended temperature range from 40C to 125C, and compatibility with TTL and 3.3-V to 5.0-V logic

Product OverviewThe IRGP4066DPbF and IRGP4066D-EPbF are n-channel Insulated Gate Bipolar Transistors (IGBTs) featuring ultrafast soft recovery diodes. Designed with low VCE(ON) Trench IGBT Technology, these devices offer low switching losses and high efficiency across a wide range of applications. They are suitable for various switching frequencies and provide robust transient performance for enhanced reliability. The IGBTs also exhibit excellent current sharing capabilities

Product Overview The S1M032120H is a 1200V Silicon Carbide (SiC) Power MOSFET designed for high-speed switching applications. It offers very low switching losses, IGBT-compatible driving voltage, fully controllable dv/dt, and high blocking voltage with low on-resistance. The device features a fast intrinsic diode with low reverse recovery (Qrr) and temperature-independent turn-off switching losses. Its benefits include reduced cooling effort and requirements, improved

Product Overview The S1M075120H2 is a 1200V Silicon Carbide (SiC) Power MOSFET from Qingchun Semiconductor (Ningbo) Co., Ltd. Designed for high-speed switching applications, it offers very low switching losses, IGBT-compatible driving voltage, and fully controllable dv/dt. This MOSFET features high blocking voltage with low on-resistance and a fast intrinsic diode with low reverse recovery. Its benefits include reduced cooling effort and requirements, efficiency improvement,