Single FETs, MOSFETs
Compact P channel MOSFET ElecSuper ESJ3139KDW designed for power switching and charging applications
SuperMOS SOT-323 P-channel MOSFET The ESJ3139KDW is a P-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuits. Its high-density cell design contributes to low RDS(on), and it is designed to be reliable and rugged with avalanche rating and low leakage current. Product Attributes Brand: ElecSuper Model: ESJ3139KDW Package
Power management N Channel MOSFET ElecSuper 2N7002NXAKR with low gate charge and trench technology
Product OverviewThe 2N7002NXAKR is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free.Product AttributesBrand: SuperMOSOrigin: ElecSuper IncorporatedMaterial: Halogen freeCertifications: UL 94V-0Color: Not specifiedTechnical SpecificationsParameterSymbolTest
power switch ElecSuper AP2302B ES N Channel MOSFET with low gate charge and trench technology design
Product OverviewThe AP2302B-ES is an N-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuits, offering high density cell design, reliability, and ESD protection.Product AttributesBrand: SuperMOSOrigin: ElecSuper IncorporatedMaterial: Halogen free, Pb-freeCertifications: UL 94V-0Technical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max
ElecSuper T2N7002AK ES N Channel MOSFET Featuring Low Gate Charge Suitable for Power Switch Design
Product OverviewThe T2N7002AK-ES is an N-Channel enhancement mode MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free.Product AttributesBrand: SuperMOS (ElecSuper)Material: Halogen freeCertifications: UL 94V-0Color: Not specifiedOrigin: Not specifiedTechnical SpecificationsParameterSymbolTest
Durable ElecSuper ESE40P40K P Channel Enhancement MOSFET with Low Gate Charge and Trench Technology
Product OverviewThe ESE40P40K is a P-Channel enhancement MOS Field Effect Transistor from ElecSuper, utilizing advanced trench technology for excellent RDS(ON) with low gate charge. It is designed for applications such as DC-DC conversion, power switching, and charging circuits, offering fast switching, high-density cell design, and a reliable, rugged construction. This product is Pb-free and Halogen free.Product AttributesBrand: ElecSuperModel: ESE40P40KPackage: TO
P Channel MOSFET ElecSuper IRLML5203TRPBF ES Featuring Avalanche Rated Design and Low Leakage Current
Product OverviewThe IRLML5203TRPBF(ES) is a P-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and features a high-density cell design for low RDS(on), fast switching, and is avalanche rated with low leakage current.Product AttributesBrand: ElecSuperPart Number:
power switch solution ElecSuper AO3400A N Channel MOSFET with avalanche rating and trench technology
Product OverviewThe AO3400A is an N-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuits, offering high density cell design, reliability, and avalanche rating.Product AttributesBrand: ElecSuperMaterial: Halogen freeCertifications: UL 94V-0Color: Not specifiedOrigin: Not specifiedTechnical SpecificationsParameterSymbolConditionsMin.Typ.Max
Power MOSFET ElecSuper ES2N7002M3T5G N Channel Device Featuring Low Gate Charge and Trench Technology
Product OverviewThe ES2N7002M3T5G is an N-Channel enhancement mode MOSFET utilizing advanced trench technology and a high-density cell design. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. This standard product is Pb-free and Halogen-free.Product AttributesBrand: ElecSuperModel: ES2N7002M3T5GPackage: SOT-723Material: Halogen freeCertifications: UL 94V-0Reel Quantity: 8,000 PCSTechnical
Low Gate Charge N Channel MOSFET ElecSuper ESJ3400 for Power Switch and Charging Circuit Applications
Product OverviewThe ESJ3400 is an N-Channel enhancement mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuits. This standard product is Pb-free and Halogen-free.Product AttributesBrand: ElecSuperModel: ESJ3400Package: SOT-23Material: Halogen freeCertifications: UL 94V-0Color: R0 (Marking)Technical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max
N Channel MOSFET ElecSuper ESJ2302S SOT 23 45m RDS ON Ideal for DC DC Converter and Charging Circuits
SuperMOS SOT-23 20V BVDSS, 45m RDS(on), N-channel MOSFETThe ESJ2302S is an N-Channel enhancement mode MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and Halogen-free.Product AttributesBrand: ElecSuperModel: ESJ2302SPackage: SOT-23Marking: 2302Material: Halogen freeCertifications: UL 94V
ElecSuper DMP6023LE 13 ES N Channel MOSFET offering performance and low RDS ON for DC DC conversion
Product OverviewThe DMP6023LE-13(ES) is an N-Channel enhancement mode MOSFET featuring advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuits, offering high density cell design, reliability, avalanche rating, and low leakage current.Product AttributesBrand: SuperMOSModel: DMP6023LE-13(ES)Material: Halogen freeCertifications: UL 94V-0Origin: ElecSuper IncorporatedTechnical SpecificationsPar
ElecSuper FDN327N ES N Channel MOSFET Featuring Advanced Trench Technology and Low RDS ON Resistance
Product OverviewThe FDN327N-ES is an N-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for applications such as DC-DC conversion, power switching, and charging circuits, offering high density cell design, reliability, and avalanche rating.Product AttributesBrand: ElecSuperPart Number: FDN327N-ESPackage: SOT-23Material: Halogen freeFlammability Rating: UL 94V-0Certifications: Pb-freeTechnical
ElecSuper NX138AKR ES N channel MOSFET designed for DC DC conversion and power switch in SOT 23 package
SuperMOS SOT-23 60V N-channel MOSFET The NX138AKR-ES is an N-Channel enhancement mode MOSFET utilizing advanced trench technology and design. This design provides excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. It is a standard, Pb-free product. Product Attributes Brand: ElecSuper Model: NX138AKR-ES Package: SOT-23 Material: Halogen free Certifications: UL 94V-0 Color: Not specified Origin: Not
ElecSuper 2N7002W 7 F ES MOSFET N Channel Device for Power Switch and DC DC Conversion Applications
Product OverviewThe 2N7002W-7-F-ES is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuits. This standard product is Pb-free.Product AttributesBrand: ElecSuperModel: 2N7002W-7-F-ESMaterial: Halogen freeCertifications: UL 94V-0ESD Protection: HBM: 2kVTechnical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max.UnitAbsolut
rugged avalanche rated N channel MOSFET ElecSuper ESE0117K suitable for power switching applications
Product OverviewThe ESE0117K is an N-Channel enhancement mode MOSFET designed using advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. This device is reliable, rugged, and avalanche rated, with a low leakage current.Product AttributesBrand: SuperMOSPart Number: ESE0117KMaterial: Halogen free, Pb-freeCertifications: UL 94V-0Package: TO-252Technical SpecificationsParamete
ElecSuper TPN2R703NL L1Q ES N Channel MOSFET suitable for DC DC conversion and power switch circuits
Product OverviewThe TPN2R703NL,L1Q(ES) is an N-Channel enhancement mode MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and features a high-density cell design for low RDS(on), reliability, and avalanche rating.Product AttributesBrand: ElecSuperPart Number: TPN2R703NL,L1Q(ES)Material:
ElecSuper AO3406 ES MOSFET offering low gate charge and Pb free construction for electronic designs
Product OverviewThe AO3406(ES) is an N-Channel enhancement mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. This standard product is Pb-free and features a high-density cell design for low RDS(on), reliability, and ruggedness.Product AttributesBrand: ElecSuperOrigin: Not specifiedMaterial: Halogen freeColor: Not specifiedCertifications: UL 94V
ElecSuper AP2300 ES N Channel MOSFET Featuring Low RDS ON and Halogen Free Material for Power Switch
Product OverviewThe AP2300-ES is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and Halogen-free.Product AttributesBrand: SuperMOSPart Number: AP2300-ESPackage: SOT-23Material: Halogen freeCertifications: UL 94V-0Color: Not specifiedOrigin: Not specifiedTechnical
Low Gate Charge N Channel MOSFET ElecSuper ESGNU04R02 Ideal for DC DC Conversion and Power Switching
Product OverviewThe ESGNU04R02 is an N-Channel enhancement mode MOSFET utilizing advanced shielded gate trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. This device is Pb-free and Halogen free.Product AttributesBrand: ElecSuperPart Number: ESGNU04R02Package: TO-220Material: Halogen freeCertifications: UL 94V-0Testing: 100% UIS TESTEDTechnical SpecificationsParameterSymbolTest
ElecSuper BSS123215 N channel MOSFET Featuring 100V BVDSS and UL 94V 0 Flammability Rating in SOT 23
SuperMOS SOT-23 100V BVDSS, 2.70 RDS(ON), N-channel MOSFET The BSS123,215 is an N-Channel enhancement mode Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and Halogen-free. Product Attributes Brand: ElecSuper Part Number: BSS123,215 Package: SOT-23 Material: Halogen free Certifications: UL
