"n channel igbt inverter"
Found 35 Products
Silicon Carbide N Channel Power MOSFET MICROCHIP MSC015SMA070B 700 Volt 15 Milliamp for PV Inverters
Product OverviewThe MSC015SMA070B is a 700 V, 15 m Silicon Carbide (SiC) N-Channel Power MOSFET from Microsemi. It offers enhanced performance over traditional silicon MOSFETs and IGBTs, leading to lower total cost of ownership for high-voltage applications. Key benefits include high efficiency for compact systems, ease of driving and paralleling, improved thermal capabilities, and elimination of external freewheeling diodes. This device is designed for applications such as
1200 Volt Silicon Carbide MOSFET Microchip MSC080SMA120B for Switching in PV Inverters and Motor Drives
Product OverviewThe Microchip MSC080SMA120B is a 1200 V, 80 m SiC N-Channel Power MOSFET designed to enhance performance and reduce the total cost of ownership for high-voltage applications. Leveraging silicon carbide technology, it offers advantages over traditional silicon MOSFETs and IGBTs, including high efficiency, faster switching speeds, and improved thermal capabilities. This device is suitable for demanding applications such as PV inverters, industrial motor drives,
Microchip MSC015SMA070B Silicon Carbide N Channel Power MOSFET with Simplified Driving and Paralleling
Microsemi MSC015SMA070B Silicon Carbide N-Channel Power MOSFET The Microsemi MSC015SMA070B is a 700 V, 15 m Silicon Carbide (SiC) N-Channel Power MOSFET designed to enhance performance and reduce the total cost of ownership for high-voltage applications compared to traditional silicon MOSFET and IGBT solutions. Its key features include low capacitances, fast switching speeds, stable operation at high junction temperatures (up to 175 C), a fast and reliable body diode, and
TO2474L Package Silicon Carbide FET 750V 11m Qorvo UJ4SC075011K4S Ideal for Replacement of Si IGBTs
UJ4SC075011K4S: 750V, 11m G4 SiC FET Product Overview The UJ4SC075011K4S is a 750V, 11m G4 Silicon Carbide (SiC) FET. It utilizes a unique cascode circuit configuration, combining a normally-on SiC JFET with a Si MOSFET to achieve a normally-off SiC FET device. This design offers standard gate-drive characteristics, making it a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. Available in the TO-247-4L package, this FET features ultra-low
Silicon Carbide FET TO2474L Package UJ4C075044K4S 750V 44mW Optimized for Switch Mode Power Supplies
UnitedSiC UJ4C075044K4S 750V SiC FET Product Overview The UnitedSiC UJ4C075044K4S is a 750V, 44mW G4 Silicon Carbide (SiC) FET designed for high-performance power applications. This device utilizes a unique 'cascode' circuit configuration, combining a normally-on SiC JFET with a Si MOSFET to create a normally-off SiC FET. Its standard gate-drive characteristics make it a direct 'drop-in replacement' for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. The
SiC FET Device With Normally Off Operation Qorvo UJ3C120080K3S Suitable for Switching Inductive Loads
SiC FET Device - UJ3C120080K3S Product Overview This 1200V-80mW SiC FET device features a unique cascode circuit configuration, combining a normally-on SiC JFET with a Si MOSFET to create a normally-off SiC FET. Its standard gate-drive characteristics allow for a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. Available in the TO-247-3L package, this device offers ultra-low gate charge and exceptional reverse recovery, making it ideal for
UF4SC120030K4S 1200V SiC FET combining normally on JFET and MOSFET for power switching applications
SiC FET UF4SC120030K4S Product Overview The UF4SC120030K4S is a 1200V, 30mW G4 SiC FET designed for high-performance switching applications. It utilizes a unique 'cascode' circuit configuration, combining a normally-on SiC JFET with a Si MOSFET to achieve a normally-off SiC FET device with standard gate-drive characteristics. This allows for seamless integration as a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, or Si superjunction devices. The UF4SC120030K4S excels
power switching device Qorvo UJ4C075023K3S 750V 23mW SiC FET for induction heating and EV charging
UnitedSiC UJ4C075023K3S 750V, 23mW SiC FET Product Overview The UnitedSiC UJ4C075023K3S is a 750V, 23mW G4 SiC FET designed for high-performance power applications. Utilizing a unique 'cascode' circuit configuration, it combines a normally-on SiC JFET with a Si MOSFET to achieve a normally-off device with standard gate-drive characteristics. This allows for a direct 'drop-in replacement' for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. The device excels in
750V 44mW Silicon Carbide FET Qorvo UJ4C075044K3S TO247 Package for Power Conversion and Motor Control
Silicon Carbide Field-Effect Transistor (SiC FET) - UJ4C075044K3S Product Overview The UJ4C075044K3S is a 750V, 44mW G4 SiC FET designed for high-performance power applications. It utilizes a unique 'cascode' circuit configuration, combining a normally-on SiC JFET with a Si MOSFET to create a normally-off SiC FET. This design offers standard gate-drive characteristics, enabling it to serve as a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction
750V SiC FET Device Featuring Low On Resistance Qorvo UJ4C075044B7S Ideal for Power Conversion Systems
Product Overview The UJ4C075044B7S is a 750V, 44mW G4 SiC FET, engineered with a unique 'cascode' circuit configuration combining a normally-on SiC JFET with a Si MOSFET to achieve a normally-off SiC FET device. This design offers standard gate-drive characteristics, making it a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. It excels in applications requiring fast switching and standard gate drive, such as EV charging, switch mode power
SiC FET Qorvo UJ3C065080T3S featuring excellent reverse recovery and compatibility with standard gate drivers
SiC FET 650V - 80m Product Overview This SiC FET device is built upon a unique 'cascode' circuit configuration, integrating a normally-on SiC JFET with a Si MOSFET to create a normally-off SiC FET. Its standard gate-drive characteristics enable it to serve as a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. Available in a TO-220-3L package, this device offers ultra-low gate charge and exceptional reverse recovery characteristics, making
750V silicon carbide fet Qorvo UJ4C075018K3S designed for high voltage power conversion applications
Product Overview The UJ4C075018K3S is a 750V, 18mW G4 SiC FET designed for high-efficiency power conversion. This device utilizes a unique cascode circuit configuration, integrating a normally-on SiC JFET with a Si MOSFET to achieve a normally-off SiC FET. Its standard gate-drive characteristics enable seamless integration as a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. The UJ4C075018K3S excels in applications requiring low gate
