Single FETs, MOSFETs
High speed switching small signal mosfet transistor Slkor SL002P02K with 20 volt 200 milliamp rating
Product OverviewThe Pch -20V -200mA Small Signal MOSFET (SL002P02K) is designed for high-speed switching applications. Its small SOT-723 package and low voltage drive capability (1.2V) make it ideal for portable equipment. This device offers a continuous drain current of 200mA and a maximum power dissipation of 150mW.Product AttributesBrand: SLKOR MicroModel: SL002P02KTechnical SpecificationsParameterSymbolConditionsValueUnitDrain - Source voltageVDSS-20VContinuous drain
N Channel MOSFET Slkor SL0C60A 25V 60A Trench Power LV MOSFET for PWM Applications and Load Switching
Product OverviewThe SL0C60A is a 25V/60A N-Channel MOSFET featuring Trench Power LV MOSFET technology. It offers high power and current handling capability with low gate charge, making it suitable for PWM applications, power management, and load switching.Product AttributesBrand: SLKOR MicroModel: SL0C60APackage: PDFN3X3-8LTechnology: Trench Power LV MOSFETDate: Rev.1 -- 21 June 2017Technical SpecificationsParameterSymbolConditionMinTypMaxUnitAbsolute Maximum RatingsDrain
High reliability semiconductor module UNI-SEMIC APG250N01 suitable for electronic circuit applications
Product OverviewThe APG250N01 is a semiconductor product from UNI-SEMICONDUCTOR CO.,LTD. This datasheet provides technical specifications and package information for the APG250N01.Product AttributesBrand: UNI-SEMICONDUCTOR CO.,LTDCompany Name: Website: www.uni-semic.comContact Number: 0575-85087896Version: 1.1Copyright: / Release Date: 2021/08Address: 25454/5Email: htw@uni-semic.comRevision History: 2018/04/19, Version 1.0, First ReleaseLayout adjustmentTechnical Specificatio
N Channel MOSFET Slkor SL3134K Featuring Trench Power LV Technology and ESD Protection for Switching
Product OverviewThis N-Channel Enhancement Mode Field Effect Transistor features Trench Power LV MOSFET technology, offering high power and current handling capability. It is designed for load/power switching, interfacing switching, and logic level shift applications. The device is ESD protected up to 3.0KV (HBM).Product AttributesBrand: SLKormicro (implied by website URL)Model: SL3134KPackage: SOT-523Certifications: ESD Protected Up to 3.0KV (HBM)Technical SpecificationsPara
VBsemi Elec SI4946BEY T1 E3 VB Dual N Channel MOSFET with 60 Volt Drain Source Voltage and RoHS Compliance
Product OverviewThe SI4946BEY-T1-E3-VB is a Dual N-Channel Trench Power MOSFET designed for high-performance applications. It offers a 60 V drain-source voltage and a low on-resistance, making it suitable for various power switching and control circuits. Key features include 100% Rg and UIS testing, and operation at elevated temperatures up to 175 C.Product AttributesBrand: VBsemiOrigin: TaiwanCertifications: RoHS compliantTechnical SpecificationsPart NumberConfigurationVDS
Dual N Channel MOSFET Slkor SL3134KDW designed for load switching and interfacing power applications
Product OverviewThis dual N-Channel MOSFET utilizes Trench Power LV MOSFET technology, offering high power and current handling capabilities. It is designed for load/power switching, interfacing switching, and logic level shift applications.Product AttributesDevice Code: 34KProduct Code: SL3134KDWManufacturer: SLKOR MicroTechnical SpecificationsParameterConditionMinTypMaxUnitAbsolute Maximum RatingsDrain-Source Breakdown VoltageVGS=0VID=250A20----VZero Gate Voltage Drain
SOT23 Package Power MOSFET TWGMC SI2301B for Portable Electronics and DC DC Converter Load Switching
Product OverviewThe SI2305/AO3401/SI2301B is a TrenchFET Power MOSFET designed for load switching in portable devices and DC/DC converters. It offers efficient power management and is available in a SOT-23 package.Product AttributesBrand: tw-gmcPackage: SOT-23Technical SpecificationsSymbolParameterTest ConditionsMinTypMaxUnitAbsolute Maximum Ratings (Ta=25)VDSDrain-Source Voltage-20VVGSGate-Source Voltage10VIDContinuous Drain Current-2.3AISContinuous Source-Drain Current
Low RDSon P Channel MOSFET Slkor SL3139K Surface Mount Device Suitable for Portable Electronics
Product OverviewThe SL3139K is a P-Channel MOSFET designed for surface mount applications. It features low RDS(on) for efficient switching and is operated at low logic level gate drive. This lead-free product is suitable for load/power switching, interfacing, logic switching, and battery management in ultra-small portable electronics.Product AttributesBrand: SLKORMicroProduct Type: P-Channel MOSFETPackage: Surface MountFeature: Lead FreeAdvantage: Low RDS(on), Low Logic Level
400V N Channel MOSFET Extended Safe Operating Area Wild Goose WGF11N40SE with Unrivalled Gate Charge
Product Overview The WGF11N40SE is a 400V N-Channel MOSFET designed for applications requiring excellent switching characteristics and low intrinsic capacitances. It offers an extended safe operating area and an unrivalled gate charge of 28nC (Typ.). This MOSFET is 100% avalanche tested and is suitable for various power electronics applications. Product Attributes Brand: WildGoose Semiconductor Model: WGF11N40SE Package Type: TO-220F Channel Type: N-Channel Technical
High Speed Switching Slkor BSS8402DW 50V N Channel and P Channel MOSFET for Portable Electronics
Product OverviewThe BSS8402DW is a 50V N-Channel and P-Channel MOSFET designed for high-side switching applications. It features low threshold voltage and fast switching speeds, making it suitable for load/power switching, interfacing, and battery management in ultra-small portable electronics. It also supports logic level shifting.Product AttributesBrand: slkormicro (implied from URL)Model: BSS8402DWTechnical SpecificationsParameterN-Channel UnitP-Channel UnitConditionMinTyp
N Channel Power MOSFET SLkor SL17N06DN1 Suitable for High Frequency Circuits and Motor Drive Systems
Product OverviewThe SL17N06DN1 is an N-Channel Power MOSFET designed for power switching applications, including hard switched and high-frequency circuits, as well as motor drives. It offers a VDS of 60V and a continuous ID of 17A (at 25). Key advantages include improved dv/dt capability, high-density cell design for ultra-low RDS(ON), and good stability with high EAS. The excellent package design ensures good heat dissipation.Product AttributesBrand: SLKormicroProduct Name:
Power MOSFET Slkor SL0G50A 60V 50A with low on resistance high avalanche energy and thermal performance
Product OverviewThis 60V/50A N-Channel MOSFET, model SL0G50A, features a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, and good stability with high EAS. Its excellent package ensures good heat dissipation, making it suitable for power switching applications.Product AttributesBrand: SLKOR MicroModel: SL0G50APackage: PDFN5X6-8LOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnic
SOT 23 Package Slkor FDN339AN SL MOSFET Designed for PWM Control and High Current Power Applications
Product OverviewThe FDN339AN-SL is an N-Channel MOSFET featuring Trench Power LV MOSFET technology, offering high power and current handling capabilities. It is designed for PWM applications and load switching.Product AttributesBrand: SLKOR MicroModel: FDN339AN-SLPackage: SOT-23Revision: Rev.1Date: 21 June 2017Technical SpecificationsParameterConditionMinTypMaxUnitAbsolute Maximum RatingsVDS20VVGS±10VTJ150CTSTG-50155CISTc=25C3AIDMTc=25C20AIDTc=25C3APDTc=25C0.5WRJAMounted on
Power MOSFET Slkor SL3422 N Channel Enhancement Mode Designed for Load Switching in Portable Devices
Product OverviewThe SL3422 is an N-Channel Enhancement-Mode Power MOSFET designed for load switching in portable devices and DC/DC converters. It features TrenchFET technology for improved performance.Product AttributesBrand: SLKORMicroModel: SL3422Technical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitStatic Drain-source breakdown voltageV(BR)DSSVGS = 0V, ID = 250A60VGate-source threshold voltageVGS(th)VDS =VGS, ID = 250A0.93VGate-source leakageIGSSVDS =0V, VGS =
Durable Slkor SL49N10G N Channel Enhancement Mode MOSFET Ideal for Motor Drivers and Power Conversion
Product OverviewThe SL49N10G is an N-Channel Enhancement Mode MOSFET featuring an advanced trench cell design for reliability and ruggedness. It is ROHS Compliant & Halogen-Free and 100% UIS and Rg Tested, making it suitable for demanding applications such as motor drivers and DC-DC converters.Product AttributesBrand: SLKORMicroCertifications: ROHS Compliant & Halogen-FreeTechnical SpecificationsPart NumberPackage TypeShippingMarkingVDSS (V)VGSS (V)TJ Max (C)TSTG (C)IDM (A)ID
High Power N Channel MOSFET Slkor SL3416 with Low On Resistance and Surface Mount Package SOT 23 3L
Product OverviewThis N-Channel MOSFET offers high power and current handling capability, making it suitable for load switch and PWM applications. It features a lead-free product acquisition and comes in a surface mount package. The device is designed for efficient power management.Product AttributesBrand: SLKORMicroDevice Code: AGLVPackage: SOT-23-3LCertifications: Lead-free product acquiredTechnical SpecificationsParameterSymbolConditionMinTypMaxUnitDrain-Source Breakdown
High Cell Density P Channel MOSFET Slkor SL4421 with Low RDS ON and Superior Heat Dissipation Design
Product OverviewThis P-Channel MOSFET utilizes advanced trench technology and design to achieve excellent RDS(on) with low gate charge, making it suitable for a wide range of applications. It features a high cell density trench design for ultra-low RDS(ON) and an excellent package for efficient heat dissipation.Product AttributesBrand: SLKORMicroGreen device availableTechnical SpecificationsSymbolParameterConditionsMinTypMaxUnitsElectrical CharacteristicsBVDSSVGS=0V,ID=250A
Battery Protection Using Slkor SL2333A P Channel Enhancement Mode Field Effect Transistor with Low RDS
Product OverviewThe SL2333A is a P-Channel Enhancement Mode Field Effect Transistor featuring Trench Power LV MOSFET technology with a high-density cell design for low RDS(ON). It offers high-speed switching capabilities and is suitable for applications such as battery protection, load switching, and power management.Product AttributesBrand: SLKORMicro (implied by URL)Origin: China (implied by URL)Material: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnic
power management using XYD X4N65DHE2 N channel MOSFET suitable for standby power systems and chargers
Product OverviewThe X4N65DHE2 is a high-performance N-channel MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. It features low gate charge, low Ciss, and fast switching capabilities, making it ideal for applications such as LED power supplies, cell phone chargers, and standby power systems.Product AttributesBrand: Xiamen XYDFAB Integrated Circuit Co., Ltd.Origin: ChinaModel: X4N65DHE2Package: TO-252-2LPackaging: Tape & ReelTechnical SpecificationsParameterSymbolValuesUn
Compact SOT23 Package Slkor FDV305N 20V NChannel MOSFET for Power Management Applications
Product OverviewThe FDV305N is a 20V N-Channel MOSFET designed for various power management applications. It features TrenchFET technology for low gate charge and low on-resistance, making it suitable for battery protection, load switching, and power management circuits. The SOT-23 surface mount package offers a compact solution for space-constrained designs.Product AttributesBrand: SLKOROrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not
