Single FETs, MOSFETs
High density cell design ElecSuper AO4614-ES SuperMOS MOSFET with fast switching and low gate charge
Product Overview The AO4614-ES is a SuperMOS complementary MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for level-shifted high-side switching and various other applications, offering fast switching, high-density cell design, and a reliable, rugged construction. This device is avalanche rated and features low leakage current. Product Attributes Brand: ElecSuper Product Line: SuperMOS Package: SOP8 Material: Halogen free
Low Gate Charge N Channel Enhancement MOSFET ElecSuper ESGNH10R90 Ideal for Charging Circuit Designs
Product OverviewThe ESGNH10R90 is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced shielded gate trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and Halogen-free.Product AttributesBrand: ElecSuperMaterial: Halogen freeCertifications: UL 94V-0Color: Not specifiedOrigin: Not specifiedTechnical SpecificationsParame
N Channel Enhancement MOSFET ElecSuper NX7002AKS ES for DC DC Conversion Power Switch Applications
Product OverviewThe NX7002AKS-ES is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuit applications. This is a standard, Pb-free product.Product AttributesBrand: ElecSuperOrigin: Not specifiedMaterial: Halogen freeColor: Not specifiedCertifications: UL 94V-0Technical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max
P Channel MOSFET ElecSuper DMG3415U 7 ES Featuring Trench Technology for Power Switching Applications
Product OverviewThe DMG3415U-7(ES) is a P-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for applications such as DC-DC conversion, power switching, and charging circuits, offering fast switching, high density cell design, and a reliable, rugged construction.Product AttributesBrand: ElecSuperModel: DMG3415U-7(ES)Package: SOT-23Material: Halogen freeCertifications: UL 94V-0Color:
N channel enhancement mode MOSFET ElecSuper AO4838 ES with avalanche rating and halogen free material
AO4838(ES) N-channel MOSFET The AO4838(ES) is an N-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent on-resistance (RDS(ON)) and low gate charge. It is suitable for DC-DC conversion, power switching, and charging circuits, offering features like 30V breakdown voltage, low RDS(ON), high-density cell design, and is Halogen-free and Avalanche Rated. Product Attributes Brand: ElecSuper Part Number: AO4838(ES) Material: Halogen free Certifications:
Durable ElecSuper BSS138L N Channel MOSFET Suitable for DC DC Conversion and Power Switch
Product OverviewThe BSS138L is an N-Channel enhancement mode MOS Field Effect Transistor utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuits. This standard product is Pb-free and Halogen free.Product AttributesBrand: ElecSuperModel: BSS138LMaterial: Halogen freeCertifications: UL 94V-0Origin: Not specifiedColor: Not specifiedTechnical SpecificationsParam
Low Input Capacitance N Channel Enhancement MOSFET Doeshare DN3018KW Suitable for Solid State Relays
DN3018KW N-Channel Enhancement MOSFET Product Overview The DN3018KW is an N-Channel Enhancement Mode Field Effect Transistor designed with Trench Power MV MOSFET technology. It offers ESD protection up to 2.5KV (HBM), low input capacitance, and fast switching speeds, making it suitable as a voltage-controlled small signal switch. Its low input/output leakage and direct logic-level interface capabilities (TTL/CMOS) make it ideal for battery-operated systems and solid-state
Power Switching N Channel MOSFET ElecSuper ESP10N10 with Low RDS ON Resistance and Gate Charge
Product OverviewThe ESP10N10 is an N-Channel enhancement mode MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This is a standard Pb-free product.Product AttributesBrand: ElecSuperModel: ESP10N10Material: Halogen freeCertifications: UL 94V-0Color: Pb-freeTechnical SpecificationsParameterSymbolConditionsMin.Typ.Max.UnitOFF
Power Conversion MOSFET ElecSuper TPH1R403NL ES N Channel Featuring Low Gate Charge and Excellent RDS
Product OverviewThe TPH1R403NL-ES is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This device is Pb-free and Halogen free.Product AttributesBrand: ElecSuperMaterial: Halogen freeCertifications: UL 94V-0Technical SpecificationsParameterSymbolConditionsMin.Typ.Max.UnitAbsolute Maximum RatingsDra
Trench Power LV MOSFET based P Channel Transistor Doeshare DP3407Q for power management and switching
Product Overview The DP3407Q is a P-Channel Enhancement Mode Field Effect Transistor designed with Trench Power LV MOSFET technology. It features a high-density cell design for low RDS(ON), enabling high-speed switching. This transistor is suitable for applications such as battery protection, load switching, and power management. Product Attributes Brand: DOESHARE Device Type: P-Channel Enhancement Mode Field Effect Transistor Technology: Trench Power LV MOSFET Cell Design:
ElecSuper ESPM3401 3 TR MOSFET P Channel Device Suitable for Charging Circuits and DC DC Conversion
Product OverviewThe ESPM3401-3/TR is a P-Channel enhancement mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. This device is a standard, Pb-free product.Product AttributesBrand: SuperMOSOrigin: ElecSuper IncorporatedMaterial: Halogen freeCertifications: UL 94V-0Technical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max.UnitAbsolute Maximum
N Channel Enhancement Mode MOSFET ElecSuper BSS138 7 F ES with Excellent RDS ON and Low Gate Charge
Product OverviewThe BSS138-7-F-ES is an N-Channel enhancement mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and halogen-free.Product AttributesBrand: ElecSuperPart Number: BSS138-7-F-ESPackage: SOT-23Material: Halogen freeCertifications: UL 94V-0Color: 38K (Marking)Origin: Not specifiedTechnical
SOT 23 Package ElecSuper BSS138NH6327 ES N Channel MOSFET Suitable for DC DC Conversion Applications
Product OverviewThe BSS138NH6327-ES is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free.Product AttributesBrand: ElecSuperModel: BSS138NH6327-ESPackage: SOT-23Material: Halogen freeCertifications: UL 94V-0Origin: www.elecsuper.comCopyright: ElecSuper
P Channel MOSFET ElecSuper ESN7403 PDFN3X3 8L Package Suitable for DC DC Conversion Power Switch
ESN7403 SuperMOS - PDFN3X3-8L P-channel MOSFETThe ESN7403 is a P-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and halogen-free.Product AttributesBrand: ElecSuperModel: ESN7403Package: PDFN3X3-8LMaterial: Halogen freeCertifications: UL 94V-0Origin: www
Power MOSFET DoesShare DN2302 N Channel device suitable for LED drivers and power switching circuits
DN2302 N-Channel MOSFET The DN2302 is an N-Channel MOSFET designed with Trench Power MOSFET technology, offering high power and current handling capability. Its high-density cell design contributes to low RDS(ON) values. This device is suitable for applications such as DC-DC converters, LED drivers, and switching circuits. Product Attributes Brand: DOESHARE Device Type: DN2302 Channel Type: N-Channel Technology: Trench Power MOSFET Technical Specifications Parameters Symbol
Power Switching ElecSuper 2N7002 N Channel MOSFET with Low Gate Charge and Enhanced Performance
Product OverviewThe 2N7002 is an N-Channel enhancement mode MOSFET utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and Halogen-free.Product AttributesBrand: SuperMOSOrigin: ElecSuper IncorporatedMaterial: Halogen freeCertifications: UL 94V-0Color: Not specifiedTechnical SpecificationsParameterSymbolCondit
Durable P Channel MOSFET ElecSuper IRF9310TRPBF ES Designed for Charging Circuit and DC DC Converter
Product DescriptionThe IRF9310TRPBF(ES) is a P-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This device is a standard product and is Pb-free.Product AttributesBrand: ElecSuperMaterial: Halogen freeCertifications: UL 94V-0Origin: Not specifiedColor: Not specifiedTechnical SpecificationsParameterSymb
Power Switching P Channel MOSFET ElecSuper AO3401 with Low Gate Charge and Halogen Free Construction
Product OverviewThe AO3401 is a P-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent on-resistance (RDS(ON)) and low gate charge. It is suitable for DC-DC conversion, power switching, and charging circuits. This standard product is Pb-free.Product AttributesBrand: ElecSuperMaterial: Halogen freeCertifications: UL 94V-0Packaging: Tape & Reel (3,000 PCS per reel)Technical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max.UnitAbsolute
Power MOSFET DOWO AO3400NSA N Channel Enhancement Mode Featuring SOT 23 Package and Low On Resistance
Product OverviewThe AO3400NSA is an N-Channel Enhancement Mode Power MOSFET designed for high power and current handling capabilities. It features a low on-resistance and is suitable for applications such as PWM, load switching, and power management. The device is packaged in a SOT-23 footprint.Product AttributesBrand: DowosemiPart Number: AO3400NSAPackage: SOT-23Origin: China (implied by website www.dowosemi.cn)Technical SpecificationsParameterSymbolTest ConditionMin.Typ.Max
Low on state resistance vertical DMOS FET DIODES ZVN3306FTA N channel transistor with 60 volts rating
Product Overview The ZVN3306F is an N-channel enhancement mode vertical DMOS FET designed for general-purpose applications. This device offers a low on-state resistance (RDS(on) of 5) and a drain-source voltage (VDS) rating of 60 Volts. It is suitable for applications requiring efficient switching and low power dissipation. The complementary P-channel device is the ZVP3306F. Product Attributes Package Type: SOT23 Channel Type: N-Channel Mode: Enhancement Mode Technology:
