Bipolar Transistor Arrays
PNP Transistor Slkor MMST3906 with 40V Collector Emitter Voltage and 0.2A Collector Current in SOT323
Product Overview The MMST3906 is a PNP transistor designed for general-purpose applications. It features a collector current capability of -0.2A and a collector-emitter voltage of -40V. This transistor is supplied in a compact SOT-323 package, making it suitable for space-constrained designs. Product Attributes Type: PNP Transistor Model: MMST3906 Package: SOT-323 Marking: K5N Manufacturer: slkormicro.com Revision: 1 Date: October 18, 2016 Technical Specifications Parameter
PNP transistor Slkor BCX52-16 medium power type for audio amplifier driver and output stage circuits
Product Overview The BCX51, BCX52, and BCX53 series are PNP medium power transistors designed for AF driver and output stages. They offer high collector current capability and low collector-emitter saturation voltage, making them suitable for medium power general purposes and driver stages of audio amplifiers. Complementary types include BCX54, BCX55, and BCX56. Product Attributes Packaging: SOT-89 Lead-free Technical Specifications Type No. Marking Package Code Collector
Low Saturation Voltage NPN Transistor Slkor 2SC4672-R Ideal for Amplification and Switching Purposes
Product Overview The 2SC4672 is an NPN transistor designed for various electronic applications. It features low saturation voltage and excellent hFE characteristics, making it a complementary part to the 2SA1797. This transistor is suitable for general-purpose amplification and switching applications. Product Attributes Brand: slkormicro Type: NPN Transistor Package: SOT-89 Complementary to: 2SA1797 Technical Specifications Parameter Symbol Rating Unit Conditions Absolute
General purpose transistor Slkor 2N2222A NPN silicon type with TO92 package and low leakage current
Product Overview The 2N2222 is a general-purpose NPN silicon transistor housed in a TO-92 plastic package. It is designed for general amplification applications and features low collector-to-emitter saturation voltage (VCE(sat)) and low leakage current (ICBO), enabling low-voltage operation. This transistor is suitable for a wide range of general-purpose amplification tasks. Product Attributes Package Type: TO-92 Plastic Package Transistor Type: NPN Silicon Technical
Low voltage drop transistor Slkor 2SC5585 featuring high current capability for power electronics
Product Overview This NPN transistor offers high current capability with a low VCE(sat) of 250mV at IC = 200mA / IB = 10mA. It is suitable for applications requiring efficient power handling and low voltage drop. The transistor is available in a SOT-523 package. Product Attributes Marking: BX Package Type: SOT-523 Plastic-Encapsulate Transistors Technical Specifications Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=10A, IE=0 15
NPN switching transistor Slkor MMBT3904 with 60V collector base voltage and low saturation voltages
Product Overview The MMBT3904 is an NPN Switching Transistor designed for general-purpose applications. It offers reliable performance with key electrical characteristics including DC current gain (hFE), collector-emitter saturation voltage (VCE(sat)), and base-emitter saturation voltage (VBE(sat)). This transistor is suitable for switching applications, as indicated by its switching characteristics such as delay time (td), rise time (tr), storage time (ts), and fall time (tf
Durable Slkor ULN2803A High Current Darlington Array for LED Display Relay and Stepper Motor Driving
Product OverviewThe ULN2803 is a monolithic integrated low-voltage, high-current Darlington array. It contains eight independent Darlington driver circuits with built-in clamp diodes, suitable for driving inductive loads such as relays and stepper motors. By paralleling Darlington pairs, higher output current capability can be achieved. This circuit is widely applicable in relay driving, lighting driving, display screen driving (LED), stepper motor driving, and as logic
Toshiba RN1503 TE85L F Dual Silicon NPN Transistor with Built in Bias Resistors Ultra Mini SMV Package
Toshiba RN1501 to RN1506 Silicon NPN Epitaxial TransistorsThe Toshiba RN1501 to RN1506 series are silicon NPN epitaxial transistors designed for switching, inverter, interface, and driver circuit applications. These transistors feature two devices in an ultra super mini SMV package with 5 leads, incorporating built-in bias resistors to simplify circuit design, reduce component count and manufacturing processes, and enable equipment miniaturization. A variety of resistance
High collector current PNP transistor Slkor SS8550W designed for general purpose electronic circuits
Product Overview The SS8550W is a PNP transistor designed for general-purpose applications. It offers high collector current capability and features complementary characteristics to the SS8050W. This transistor is suitable for various electronic circuits requiring amplification and switching functions. Product Attributes Brand: SLKOR Model: SS8550W Transistor Type: PNP Package: SOT-323 Marking: Y2 Rank Range: 200350 Technical Specifications Parameter Symbol Test Conditions
Durable Slkor BC847C NPN transistor designed for switching and AF amplifier circuit applications
Product Overview The BC846, BC847, and BC848 series are NPN transistors ideally suited for automatic insertion and applications in switching and AF amplifier circuits. These devices offer reliable performance with clearly defined electrical characteristics and robust maximum ratings for various operational conditions. Product Attributes Type: Transistor (NPN) Package: SOT-23 Manufacturer: www.slkormicro.com Revision: 2 Date: 21 November 2018 Technical Specifications Parameter
Epitaxial Planar Die Dual NPN Transistor Slkor MMDT5551 Medium Power Amplification Switching Device
Product Overview The MMDT5551 is a dual NPN epitaxial planar die construction transistor, featuring a complementary PNP type (MMDT5401) available. It is ideally suited for medium power amplification and switching applications. This device offers robust performance with key electrical characteristics such as high breakdown voltages and controlled DC current gain (hFE) across various collector current levels. Its transition frequency (fT) and low output capacitance (Cob) make
NPN Silicon Epitaxial Planar Transistor Slkor MMDT2222A for in Amplification and Switching Circuits
Product Overview The MMDT2222A is an NPN Silicon Epitaxial Planar Transistor designed for general purpose and switching applications. It offers reliable performance with defined current gain, breakdown voltages, and saturation voltages, making it suitable for various electronic circuits requiring amplification or switching functions. Product Attributes Type: NPN Silicon Epitaxial Planar Transistor Model: MMDT2222A Package: SOT-363 Brand: SLKORMICRO (implied by website URL)
PNP Bipolar Junction Transistor Slkor B772 Suitable for Low Speed Switching and Electronic Circuit
Product Overview This is a PNP bipolar junction transistor designed for low-speed switching applications. It offers reliable performance with specific voltage and current ratings suitable for various electronic circuits. Product Attributes Product Type: Transistor (PNP) Brand: SLKORMicro (implied by URL) Package Type: SOT-89 Technical Specifications Symbol Parameter Test Conditions Min Typ Max Units MAXIMUM RATINGS (TA=25 unless otherwise noted) VCBO Collector-Base Voltage
PNP transistor Slkor MMBT2907AT small SOT523 package suitable for switching and amplification circuits
Product Overview The MMBT2907AT is a PNP transistor designed for general-purpose applications. It is complementary to the MMBT2222AT and is supplied in a small SOT-523 package. This device offers a high DC current gain and is suitable for various switching and amplification circuits. Product Attributes Brand: SLKORMICRO Model: MMBT2907AT Type: PNP Transistor Package: SOT-523 Complementary To: MMBT2222AT Technical Specifications Parameter Symbol Rating / Conditions Unit
Low VCEsat PNP transistor Slkor 2SB1386-R epitaxial planar type for power and signal applications
Product Overview The 2SB1386 is a PNP silicon transistor featuring an epitaxial planar type construction. It offers low VCE(sat) with a typical value of -0.35V at IC/IB = -4A/-0.1A, and excellent DC current gain. This transistor is suitable for various applications requiring efficient power handling and signal amplification. Product Attributes Type: PNP silicon transistor Construction: Epitaxial planar type Package: SOT-89 Brand: SLKOR (implied by website URL) Origin: China
Medium power NPN transistor Slkor TIP32C with 100V collector base voltage and TO220 packaging
Product Overview The TIP32 series are NPN power transistors designed for medium power linear and switching applications. They serve as complements to the TIP31 series. Product Attributes Brand: JSMICRO Semiconductor Package: TO-220 Technical Specifications Model Parameter Condition Value Unit TIP32 Collector-base voltage (VCBO) Open emitter -40 V TIP32A -60 V TIP32B -80 V TIP32C -100 V TIP32 Collector-emitter voltage (VCEO) Open base -40 V TIP32A -60 V TIP32B -80 V TIP32C
High voltage PNP transistor Slkor 2SA1661-Y featuring compact SOT-89 package for circuit design
Product Overview This PNP transistor, model 2SA1661, is designed for high-voltage applications and features a high transition frequency. Its small, flat SOT-89 package makes it suitable for compact designs. Key benefits include its high voltage capability and efficient operation at high frequencies. Product Attributes Brand: SLKOR (implied by website mention) Package Type: SOT-89 Technical Specifications Parameter Symbol Rating / Conditions Unit Min Typ Max Absolute Maximum
General Purpose NPN Transistor Slkor 2SC2714-Y with Collector Current 20mA and SOT23 Package Design
Product Overview The 2SC2714 is an NPN transistor designed for general-purpose applications. It offers a collector current capability of 20mA and a collector-emitter voltage of 30V. This transistor is available in the SOT-23 package, making it suitable for compact electronic designs. Key electrical characteristics include a DC current gain (hFE) ranging from 40 to 200, a collector-emitter saturation voltage (VCE(sat)) of up to 0.4V, and a transition frequency (fT) of 550 MHz.
Switching and AF Amplifier Transistor Slkor BC858C PNP Type in SOT23 Package for Electronic Projects
Product Overview The BC856-BC858 series are PNP transistors ideally suited for automatic insertion, designed for switching and AF amplifier applications. These transistors offer a range of electrical characteristics and are available in the SOT-23 package. Product Attributes Brand: slkormicro (implied by website URL) Product Series: BC856-BC858 Transistor Type: PNP Package: SOT-23 Revision: 2 Date: 24 December 2017 Technical Specifications Parameter Symbol BC856 BC857 BC858
Switching and AF amplifier PNP transistor Slkor BC857CW plastic encapsulated in compact SOT323 package
Product Overview These PNP plastic-encapsulated transistors are ideally suited for automatic insertion and are designed for switching and AF amplifier applications. They offer reliable performance in various electronic circuits. Product Attributes Type: PNP Transistor Encapsulation: Plastic Package: SOT-323 Brand: SLKORMICRO (implied by website reference) Technical Specifications Model Parameter Symbol Test Conditions Min Max Unit BC856W Collector-Base Voltage VCBO IC= -10A,
