Single FETs, MOSFETs
High current switching P channel MOSFET RENESAS NP36P06KDG E1 AY AEC Q101 certified automotive grade
Product OverviewThe NP36P06KDG is a P-channel MOS Field Effect Transistor designed for high current switching applications. It offers super low on-state resistance and low input capacitance, making it suitable for automotive applications and is AEC-Q101 qualified. This product is Pb-free, meaning it ...
switching p channel power mos fet renesas 2sj598 zk e1 az with low on state resistance and gate diode
2SJ598 SWITCHING P-CHANNEL POWER MOS FET The 2SJ598 is a P-channel MOS Field Effect Transistor designed for solenoid, motor, and lamp driver applications. It offers low on-state resistance and low input capacitance, with a built-in gate protection diode for enhanced reliability. This device is ...
Gallium Nitride GaN Semiconductor Device RENESAS TP65H050G4WS 650V Normally Off Gen IV SuperGaN FET
Product OverviewThe TP65H050G4WS is a 650V, 50 m gallium nitride (GaN) FET utilizing Renesas's Gen IV platform. This normally-off device integrates a high-voltage GaN HEMT with a low-voltage silicon MOSFET, offering enhanced reliability and performance. Leveraging advanced epi and patented design ...
Durable PJSEMI PJM20N60TE N Channel Power MOSFET designed for PWM and load switching power management
Product OverviewThe PJM20N60TE is an N-Channel Enhancement Mode Power MOSFET designed for efficient power management applications. Featuring advanced trench technology, it offers excellent performance with low on-resistance and high avalanche energy. This RoHS and Reach compliant component is ...
650V 240m Gallium Nitride FET Renesas TP65H300G4LSGB-TR Gen IV SuperGaN technology with PQFN package
Product OverviewThe TP65H300G4LSGB is a 650V, 240m Gallium Nitride (GaN) FET, utilizing Renesass Gen IV platform. This normally-off device integrates a high-voltage GaN HEMT with a low-voltage silicon MOSFET, offering enhanced reliability and performance. The Gen IV SuperGaN platform employs ...
750V silicon carbide fet Qorvo UJ4C075018K3S designed for high voltage power conversion applications
Product Overview The UJ4C075018K3S is a 750V, 18mW G4 SiC FET designed for high-efficiency power conversion. This device utilizes a unique cascode circuit configuration, integrating a normally-on SiC JFET with a Si MOSFET to achieve a normally-off SiC FET. Its standard gate-drive characteristics ...
650V 72m Ohm Gallium Nitride GaN FET PQFN Package RENESAS TP65H070G4LSGB-TR Normally Off Device
Product OverviewThe TP65H070G4LSGB is a 650V, 72m Gallium Nitride (GaN) FET, designed as a normally-off device. It integrates advanced high voltage GaN HEMT and low voltage silicon MOSFET technologies to deliver superior reliability and performance. Leveraging the Gen IV SuperGaN platform, it ...
400V N Channel MOSFET PIP PTA10N40B Featuring Low Gate Charge and Fast Recovery Diode for Power Electronics
Product OverviewThe PTP10N40B and PTA10N40B are 400V N-Channel MOSFETs featuring proprietary new planar technology. They offer low gate charge for minimized switching loss and a fast recovery body diode. These MOSFETs are suitable for applications such as ballasts, lighting, DC-AC inverters, and ...
N Channel MOSFET PJSEMI PJM20H02ANSC with 200V Drain Source Voltage and Low Gate Body Leakage Current
Product OverviewThe PJM20H02ANSC is an N-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is designed for synchronous buck converter applications and offers advantages such as being Halogen and Antimony Free. This MOSFET is rated for VDS= 200V and ID= 2A, with a low RDS...
Power MOSFET PJSEMI PJM6801DPSG Dual P Channel Enhancement Mode device optimized for load switching and PWM control
Product OverviewThe PJM6801DPSG is a Dual P-Channel Enhancement Mode Power MOSFET designed for efficient power management. It features excellent RDS(on) and low gate charge, making it suitable for load switching and PWM applications. This MOSFET offers robust performance with a VDS of -30V and ...
Load Switching Power MOSFET PJSEMI PJM3400NSQ with Low Gate Charge and High Forward Transconductance
Product OverviewThe PJM3400NSQ is an N-Channel Enhancement Mode Power MOSFET designed for load switching and PWM applications. It offers high power and current handling capability with low gate charge and RDS(on). This MOSFET is ideal for power management solutions.Product AttributesBrand: ...
Low RDS ON 30V N Channel MOSFET PANJIT PJA3404 AU R1 000A1 ideal for PWM and switch load circuits
Product OverviewThe PPJA3404-AU is a 30V N-Channel Enhancement Mode MOSFET designed for switch load and PWM applications. It features advanced Trench Process Technology, offering low RDS(ON) at various gate-source voltages and drain currents. This AEC-Q101 qualified component is lead-free and ...
650V 35 Milliohm Gallium Nitride FET Device RENESAS TP65H035G4WS Featuring Gen IV SuperGaN Technology
Product DescriptionThe TP65H035G4WS is a 650V, 35 m gallium nitride (GaN) FET utilizing Renesass Gen IV platform. This normally-off device integrates a high-voltage GaN HEMT with a low-voltage silicon MOSFET, delivering superior reliability and performance. The Gen IV SuperGaN platform leverages ...
N Channel Enhancement Mode Power MOSFET PJSEMI PJM80N68TE with 68V Drain Source Voltage and 80A Current
Product OverviewThe PJM80N68TE is an N-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It offers high performance with a VDS of 68V and ID of 80A, and a low RDS(on) of less than 8.6m at VGS=10V. This RoHS compliant and Halogen/Antimony free component is ideal for load ...
Automotive P channel MOSFET RENESAS NP100P06PDG E1 AY featuring AEC Q101 qualification and Pb free design
Product OverviewThe NP100P06PDG is a P-channel MOS Field Effect Transistor designed for high current switching applications. It offers super low on-state resistance and low input capacitance, making it suitable for automotive applications and is AEC-Q101 qualified. This Pb-free product does not ...
MOSFET PJSEMI PJM60N60TE with 60 volts drain source breakdown voltage and 60 amps continuous current
Product OverviewThe PJM60N60TE is an N-Channel Enhancement Mode Power MOSFET featuring advanced trench technology. It offers 100% avalanche testing, RoHS compliance, and is halogen and antimony-free. This MOSFET is designed for load switching, PWM applications, and power management, providing a VDS ...
Power MOSFET PJSEMI PJM03P40SA P Channel Type Featuring 40V Voltage Rating and RoHS Reach Compliance
Product OverviewThe PJM03P40SA is a P-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is RoHS and Reach Compliant, and Halogen and Antimony Free. This MOSFET is ideal for load switch, PWM applications, and power management. Key specifications include VDS of -40V, ID of ...
Dual N-Channel Enhancement Mode MOSFET PJSEMI PJM07DN30PA for Load Switching and Power Management
Product OverviewThe PJM07DN30PA is a Dual N-Channel Enhancement Mode Power MOSFET designed for load switching, PWM applications, and power management. It features advanced trench technology, 100% avalanche tested, and is RoHS and Reach compliant, as well as Halogen and Antimony Free. This MOSFET ...
PANJIT PJD14P06A AU L2 000A1 60V P Channel MOSFET with low RDS ON and green molding compound IEC 61249
Product OverviewThe PPJD14P06A-AU is a 60V P-Channel Enhancement Mode MOSFET designed for high-speed switching applications. It offers low RDS(ON), low gate charge, and improved dv/dt capability, making it suitable for various power management solutions. This MOSFET is AEC-Q101 qualified and ...
60V 80A N Channel MOSFET Shenzhen ruichips Semicon RU6080L for Power Supply and Switching Applications
Product OverviewThe RU6080L is an N-Channel Advanced Power MOSFET from Ruichips Semiconductor. It features a 60V/80A rating with a low on-state resistance of 7m (Typ.) at VGS=10V. Designed with a super high dense cell structure, this MOSFET is 100% avalanche tested and available in lead-free and ...
