Single FETs, MOSFETs

Product OverviewThe WSK50P10 is a high-performance P-Channel Trench MOSFET featuring extreme high cell density, offering excellent RDS(ON) and gate charge for synchronous buck converter applications. It meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. This MOSFET is ideal for power management in industrial DC/DC converters, load switches, and battery protection.Product AttributesBrand: WinsokCertifications: RoHS

Product OverviewThis is a dual P-Channel 30-V (D-S) MOSFET featuring TrenchFET Power MOSFET technology and 100% UIS Tested. It is designed for load switching applications in notebook PCs, desktop PCs, and game stations. Key advantages include low on-resistance and halogen-free compliance.Product AttributesHalogen-freeTrenchFET Power MOSFET100 % UIS TestedRoHS CompliantTechnical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max.UnitDrain-Source Breakdown VoltageVDSVGS =

Product OverviewThe XR4406B is a high cell density trenched N-channel MOSFET designed for high-efficiency synchronous buck converter applications. It offers excellent RDS(on) and low gate charge, meeting RoHS and Green Product requirements with 100% EAS guaranteed and full function reliability approval. This fast switching MOSFET is ideal for power management solutions.Product AttributesBrand: Not SpecifiedOrigin: Not SpecifiedMaterial: Not SpecifiedColor: Not SpecifiedCertif

Product OverviewThe AO4800-VB is a dual N-Channel Trench Power MOSFET designed for various applications. It features low on-resistance and high performance, making it suitable for DC/DC converters and set-top boxes. The device is 100% UIS and Rg tested, and compliant with RoHS directives.Product AttributesBrand: VBsemiOrigin: TaiwanCertifications: Halogen-free (IEC 61249-2-21 Definition), RoHS Directive 2002/95/ECTechnical SpecificationsParameterSymbolTest ConditionsMin.Typ

Product OverviewThe YJG210G06AR is an N-Channel Enhancement Mode Field Effect Transistor featuring Split Gate Trench MOSFET technology. It offers excellent heat dissipation with a high-density cell design for low RDS(ON). This product is designed for power switching applications, including uninterruptible power supplies, PD charging, and DC-DC converters. It meets UL 94 V-0 flammability rating and is Halogen Free.Product AttributesBrand: Yangzhou Yangjie Electronic Technology

Product OverviewThe XT ELECTRONICS 2N7002KDW is a N-Channel SMD MOSFET designed for high-density cell applications, offering ultra-low on-resistance. It functions as a voltage-controlled small signal switch, providing a rugged and reliable solution with high saturation current capability. This MOSFET is ESD protected and ideal for load switching in portable devices and DC/DC converters.Product AttributesBrand: XT ELECTRONICSModel: 2N7002KDWType: N-Channel SMD MOSFETOrigin:

Product OverviewThe IRF7473TRPBF-VB is a N-Channel 100 V (D-S) MOSFET designed for primary side switching applications. It features extremely low Qgd for reduced switching losses, 100% Rg tested, and 100% avalanche tested. This device is compliant with RoHS Directive 2002/95/EC and Halogen-free according to IEC 61249-2-21 Definition.Product AttributesBrand: VBsemiCertifications: Halogen-free, RoHS Directive 2002/95/ECPackage Type: SO-8Technical SpecificationsParameterSymbolLi

Product OverviewThe FKN0008 is a high cell density trenched N-channel MOSFET designed for excellent RDS(on) and efficiency in small power switching and load switch applications. It meets RoHS and Green Product requirements with full function reliability approval. Key features include Green Device availability, super low gate charge, and excellent Cdv/dt effect decline due to advanced high cell density Trench technology.Product AttributesCertifications: RoHS, Green ProductTech

Product OverviewThe XCH3400 is a high cell density trenched N-channel MOSFET designed for excellent RDS(on) and efficiency in small power switching and load switch applications. It meets RoHS and Green Product requirements with full function reliability approval. Key features include a green device option, super low gate charge, and excellent Cdv/dt effect decline, achieved through advanced high cell density trench technology.Product AttributesBrand: XCHModel: XCH3400Technolo

Product OverviewThe SL12P03S is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(on) and gate charge, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function reliability approval.Product AttributesBrand: SLKORMicroCertifications: RoHS, Green ProductKey Features: 100% EAS Guaranteed, Green Device Available, Super Low Gate Charge, Excellent CdV/dt effect decline

Product OverviewThe XCH2N65AG is a silicon N-Channel Enhanced VDMOSFET manufactured using self-aligned planar technology. This design minimizes conduction losses, enhances switching performance, and improves avalanche energy. It is suitable for various power switching circuits, contributing to system miniaturization and higher efficiency. The product adheres to RoHS standards.Product AttributesBrand: XCHMaterial: Silicon N-ChannelTechnology: Enhanced VDMOSFET, Self-aligned

Product OverviewThe SQD50P06-15L-GE3-VB is a P-Channel 60 V Trench Power MOSFET designed for load switching applications. It offers a low on-state resistance and robust performance.Product AttributesBrand: VBsemiMaterial Categorization: RoHS Compliant, Halogen-FreeTechnical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max.UnitStatic CharacteristicsDrain-Source Breakdown VoltageVDSVGS = 0 V, ID = - 250 µA- 60--VGate Threshold VoltageVGS(th)VDS = VGS, ID = - 250 µA- 1.5-

Product OverviewThe IRF9328TRPBF-VB is a P-Channel 30-V (D-S) Trench Power MOSFET designed for load switching applications in notebook and desktop PCs. It features 100% Rg and UIS tested, offering high performance and reliability.Product AttributesBrand: VBsemiCertifications: Halogen-free According to IEC 61249-2-21 AvailableOrigin: TaiwanTechnical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max.UnitDrain-Source Breakdown VoltageVDSVGS = 0 V, ID = - 250 A- 30VVDS

Product Overview The VBMB1208N is a high-performance N-Channel MOSFET designed for various power applications. It features a low-profile through-hole package with a TO-220 FULLPAK configuration, offering excellent thermal performance and ease of integration. Key advantages include a high operating temperature of 150 C, fast switching capabilities, and full avalanche rating, making it suitable for demanding environments. This MOSFET is halogen-free and compliant with RoHS

Product OverviewThe APM4050PUC-TRL-VB is a P-Channel Power MOSFET featuring TrenchFET technology for low thermal resistance and high performance. It is 100% tested for Rg and UIS, making it suitable for various power management applications.Product AttributesBrand: VBsemiPackage Type: TO-252Technical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max.UnitP-Channel 40 V (D-S) MOSFETDrain-Source VoltageVDSVGS = 0 V, ID = -250 A-40VGate-Source Threshold VoltageVGS(th)VDS =

Product OverviewThe SL0C20A is a 20V/20A N-Channel MOSFET designed with a high-density cell structure for ultra-low Rds(on). It offers fully characterized avalanche voltage and current, good stability and uniformity with high EAS, and an excellent package for efficient heat dissipation. This MOSFET is ideal for load switching, hard switched and high-frequency circuits, and uninterruptible power supplies.Product AttributesBrand: SLKOR MicroPackage: PDFN3X3-8LModel Number:

Product Overview The Wolfspeed CAB011A12GM3 and CAB011A12GM3T are 1200 V, 11 m Silicon Carbide Half-Bridge Modules designed for high-frequency operation with ultra-low loss characteristics. These normally-off, fail-safe devices feature zero turn-off tail current from the MOSFET and are built on an Aluminum Nitride Ceramic Substrate, with an option for pre-applied thermal interface material. They enable compact, lightweight systems with increased efficiency due to the low

Product OverviewThe STS7NF60L-VB is a high-performance N-Channel Trench Power MOSFET designed for efficient synchronous rectifier operation in low-side applications. It offers excellent thermal performance and is optimized for demanding power supply designs.Product AttributesCertifications: Halogen-free According to IEC 61249-2-21 DefinitionBrand: VBsemiOrigin: TaiwanTechnical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max.UnitDrain-Source Breakdown VoltageVDSVGS = 0

Product OverviewThe FDS9945-NL-VB is a Dual N-Channel MOSFET designed for high-performance applications. It features a trench power MOSFET structure, offering 100% Rg and UIS testing for reliability. This device is suitable for applications requiring efficient power switching with a breakdown voltage of 60V and a continuous drain current of 7A per leg.Product AttributesBrand: VBsemiCertifications: RoHS compliantTechnical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max

Product OverviewThe BRT30N70P1 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features 30V drain-to-source voltage and 70A continuous drain current with low on-resistance (RDS(ON) < 6.0m @ VGS = 10V). Utilizing advanced trench technology, it offers excellent RDS(ON) and low gate charge, making it suitable for load switch, PWM applications, and power management scenarios. The device is lead-free.Product AttributesBrand: XTX Technology Inc.Origin: