Single FETs, MOSFETs

100V/12A N-Channel MOSFETThis 100V/12A N-Channel MOSFET features a super high-density cell design for extremely low RDS(ON) and exceptional on-resistance and maximum DC current capability. It is designed for power management applications in notebooks, DC/DC converters, load switches, and LCD display inverters.Product AttributesDevice Code: 12N10Package: TO-252Technical SpecificationsParameterConditionMinTypMaxUnitDrain-Source Breakdown VoltageVGS=0VID=250A100----VZero Gate

SL04P06 -60V/-4A P-Channel MOSFETHigh-density cell design for ultra low Rdson, fully characterized avalanche voltage and current, and excellent package for good heat dissipation. Ideal for PWM applications, power management, and load switch scenarios.Product AttributesBrand: SLKormicroModel: SL04P06Package: SOT-223Technical SpecificationsParameterSymbolConditionMinTypMaxUnitDrain-Source Breakdown VoltageBV(BR)DSSVGS=0VID=-250A-60----VZero Gate Voltage Drain CurrentIDSSVDS=

Product OverviewThe SL2102 is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power LV MOSFET technology. It offers high power and current handling capabilities, making it suitable for PWM applications and load switching.Product AttributesBrand: SLKormicro (implied by URL)Technical SpecificationsParameterSymbolConditionsMinTypMaxUnitProduct SummaryDrain-source VoltageVDS20VDrain CurrentID2.0ARDS(ON)RDS(ON)at VGS=4.5V68mohmRDS(ON)RDS(ON)at VGS=2

Product OverviewThe SL3422 is an N-Channel Enhancement-Mode Power MOSFET designed for load switching in portable devices and DC/DC converters. It features TrenchFET technology for improved performance.Product AttributesBrand: SLKORMicroModel: SL3422Technical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitStatic Drain-source breakdown voltageV(BR)DSSVGS = 0V, ID = 250A60VGate-source threshold voltageVGS(th)VDS =VGS, ID = 250A0.93VGate-source leakageIGSSVDS =0V, VGS =

Product OverviewThis N-Channel Enhancement Mode Field Effect Transistor utilizes Trench Power MV MOSFET technology for low RDS(ON) and excellent heat dissipation. Its high-density cell design makes it suitable for DC-DC converters and power management functions.Product AttributesBrand: SLKORMicro (implied by website)Model: SL15N10ACertifications: 100% UIS Tested, 100% VDS TestedTechnical SpecificationsParameterSymbolConditionsMinTypMaxUnitDrain-source VoltageVDS100VGate

Product OverviewThe SL2P10A is a -100V/-2A P-Channel MOSFET featuring super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density Trench technology. It is available as a green device and is suitable for applications such as video monitors and power management.Product AttributesBrand: SLKORMicroPackage: SOT-23Certifications: Green Device AvailableTechnical SpecificationsParameterSymbolConditionMinTypMaxUnitDrain-Source Breakdown VoltageBV(BR)DSSVGS

Product OverviewEfficient and reliable N-Channel MOSFET transistor for a wide variety of applications. Features include static drain-source on-resistance as low as 150m, enhancement mode, fast switching speed, 100% avalanche tested, and minimum lot-to-lot variations for robust performance.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsSymbolParameterConditionsMinTypMaxU

Product OverviewThis P-Channel MOSFET utilizes advanced trench technology and design to achieve excellent RDS(on) with low gate charge, making it suitable for a wide range of applications. It features a high cell density trench design for ultra-low RDS(ON) and an excellent package for efficient heat dissipation.Product AttributesBrand: SLKORMicroGreen device availableTechnical SpecificationsSymbolParameterConditionsMinTypMaxUnitsElectrical CharacteristicsBVDSSVGS=0V,ID=250A

Product OverviewThe IRLML6402 is a P-Channel TrenchFET Power MOSFET designed for load switching in portable devices and DC/DC converters. It features ultra-low on-resistance and is available in tape and reel packaging.Product AttributesBrand: IRLML6402Origin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitDrain-Source VoltageVDS-20VGate-Source VoltageVGS±12VContinuous Drain

Product OverviewThis SL11N65CD is a 650V, 11A N-Channel Super-JMOSFET produced using Slkor's advanced Superjunction MOSFET technology. This technology is optimized for minimal on-state resistance, superior switching performance, and high energy pulse withstand capability in avalanche and commutation modes. It is well-suited for high-efficiency switched-mode power supplies.Product AttributesBrand: SlkorTechnology: Super-JMOSFETTechnical SpecificationsParameterTest ConditionsMi

Product OverviewThe SL8820 is a dual N-Channel TrenchFET Power MOSFET designed for high-performance applications. It features excellent RDS(on), low gate charge, and high power and current handling capabilities, making it suitable for battery protection, load switching, and power management. The device is available in a surface mount SOT-23-6 package.Product AttributesBrand: SLKORMicroPackage: SOT-23-6Technical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitSTATIC

Product OverviewThis P-Channel MOSFET utilizes advanced trench technology and design to deliver excellent RDS(on) with low gate charge, making it suitable for a wide range of applications. Key features include high cell density trench technology for ultra-low RDS(ON), excellent package for good heat dissipation, and availability as a green device.Product AttributesBrand: slkormicroModel: IRF9540Technology: Advanced Trench TechnologyCertifications: Green device availableTechni

Product OverviewThe SL4884A is a 40V/10A Dual N-Channel MOSFET featuring Trench Power LV MOSFET technology and a High Density Cell Design for low RDS(ON). It offers high-speed switching capabilities, making it suitable for battery protection, load switch, and power management applications.Product AttributesBrand: SLKORModel: SL4884ATechnology: Trench Power LV MOSFETPackage: SOP-8Technical SpecificationsParameterSymbolConditionMinTypMaxUnitDrain-Source Breakdown VoltageBV(BR

Product OverviewThe SL2312 is an N-Channel Power MOSFET designed for high power and current handling capabilities. It features a VDS of 20V and an ID of 5A, with low on-state resistance (RDS(ON) < 35m @ VGS=2.5V, RDS(ON) < 25m @ VGS=4.5V). This lead-free product is suitable for applications such as battery protection, load switching, and power management.Product AttributesBrand: SLKOR MicroProduct Type: N-Channel Power MOSFETPackage: SOT-23Certifications: Lead free product is

Product OverviewThe SL64N10 is an N-Channel Enhancement Mode MOSFET designed for high-performance applications. It features fast switching speed, reliability, and ruggedness, making it suitable for motor drivers and DC-DC converters. This product is ROHS Compliant & Halogen-Free and is 100% UIS Tested.Product AttributesBrand: SLKORMicroCertifications: ROHS Compliant & Halogen-FreeTesting: 100% UIS TestedTechnical SpecificationsPart NumberPackage TypeShippingMarkingVDSS (V

SL4468A N-Channel MOSFETThe SL4468A is an N-Channel MOSFET designed for power switching applications. It features a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, and an excellent package for good heat dissipation. This MOSFET is suitable for various power switching applications.Product AttributesBrand: slkormicroModel: SL4468APackage: SOP-8Technical SpecificationsSymbolParameterConditionMinTypMaxUnitAbsolute Maximum

Product OverviewThe FDN338P is a P-Channel MOSFET featuring leading trench technology for low on-resistance (RDS(on)) and low gate charge. It is designed for applications such as video monitors and power management.Product AttributesBrand: slkormicroModel: FDN338PPackage: SOT-23Technical SpecificationsParameterSymbolConditionMinTypMaxUnitDrain-Source Breakdown VoltageBV(BR)DSSVGS=0VID=-250A-20----VZero Gate Voltage Drain CurrentIDSSVDS=-16VVGS=0V-----1uAGate-Body Leakage

Product OverviewThe 2N7002E is an N-Channel Power MOSFET designed for high power and current handling capabilities. It is a lead-free product suitable for surface mount applications. This MOSFET is ideal for PWM applications, load switching, and power management.Product AttributesBrand: SLKORMicroCertifications: Lead-free product acquiredPackage: SOT-23Technical SpecificationsCharacteristicSymbolMinTypMaxUnitNotesDrain-Source Breakdown VoltageBVDSS60V(ID =250uA,VGS=0V)Gate

Product OverviewThe SL40P03G is a high-density P-Channel MOSFET designed for efficient battery and loading switching applications. It features an ultra-low RDS(ON) due to its advanced cell design, fully characterized avalanche voltage and current, and excellent stability and uniformity. The MOSFET is housed in a PDFN3X3-8L package, offering good heat dissipation for demanding applications.Product AttributesBrand: slkormicroPackage Type: PDFN3X3-8LTechnical SpecificationsParam

Product OverviewThe SL4485 is a P-Channel MOSFET designed for high-density applications requiring ultra-low Rds(on). It features a fully characterized avalanche voltage and current, and an excellent package for efficient heat dissipation. This MOSFET is suitable for PWM applications, power management, and load switching.Product AttributesBrand: SLKormicroModel: SL4485Package: SOP-8Technical SpecificationsParameterConditionMinTypMaxUnitAbsolute Maximum RatingsVDSDrain-Source