Single FETs, MOSFETs
Super Junction MOSFET WUXI UNIGROUP MICRO TPA50R400C with Low Gate Charge and High Avalanche Energy
Wuxi Unigroup Super-Junction Power MOSFETsThe TPP50R400C series of Super-Junction Power MOSFETs from Wuxi Unigroup Microelectronics Company offers very low FOM (RDS(on)Qg) and 100% avalanche tested performance. These RoHS compliant devices are ideal for Switch Mode Power Supply (SMPS), Uninterruptib...
Broadband RF microwave Gallium Nitride transistor Wolfspeed CGHV40180F for amplifier circuit designs
Product Overview The MACOM CGHV40180F is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications. Operating from a 50-volt rail, it offers high efficiency, high gain, and wide bandwidth capabilities, making it ...
Power Switching Transistor YANGJIE YJD80G06CQ N Channel Enhancement Mode with Low Switching Loss and Excellent Stability
Product OverviewThe YJD80G06CQ is a N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features low RDS(on) & FOM, extremely low switching loss, excellent stability and uniformity, and fast switching with soft recovery. This transistor is ...
Power Switching Transistor XCH XCH4N80N Silicon N-Channel MOSFET with Low Conduction Loss and High Avalanche Energy
Product OverviewThe XCH4N80N is a silicon N-channel Enhanced VDMOSFET manufactured using self-aligned planar technology. This technology enhances efficiency by reducing conduction loss, improving switching performance, and increasing avalanche energy. Designed for miniaturization and higher ...
switching solution XCH 2N70 N channel power MOSFET for motor controls and power supply applications
Product OverviewThe 2N70 is a high voltage N-Channel Power MOSFET designed for high-speed switching applications. It offers improved characteristics such as fast switching time, low gate charge, low on-state resistance, and high avalanche ruggedness. This MOSFET is ideal for use in power supplies, ...
load switch and power switching solutions using XCH XCHS1005 N channel MOSFET with low RDS ON values
Product OverviewThe XCHS1005 is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and efficiency in small power switching and load switch applications. It meets RoHS and Green Product requirements with full function reliability approval. Key features include super low gate ...
LowSide Synchronous Rectifier 60V NChannel Trench Power MOSFET VBsemi Elec SI4850DY-T1-E3-VB Device
Product OverviewThe SI4850DY-T1-E3-VB is a 60-V N-Channel Trench Power MOSFET optimized for low-side synchronous rectifier operation. It offers high efficiency and is suitable for applications like CCFL inverters. This device is halogen-free and has undergone 100% Rg and UIS testing.Product ...
Single N Channel Power MOSFET WNM2091A 6TR from WILLSEMI with Low Gate Charge and DFN2X2 6L Package
Product OverviewThe WNM2091A is a single N-Channel enhancement mode Power MOSFET from Will Semiconductor Ltd. Utilizing advanced trench technology and a super high-density cell design, it offers excellent ON resistance with low gate charge. This device is ideal for DC-DC conversion, power switch, ...
VBsemi Elec SI1308EDL VB Trench Power MOSFET N Channel for Portable Device Motor and Relay Switching
Product OverviewThe SI1308EDL-VB is a N-Channel Trench Power MOSFET designed for various applications including portable devices and load switching for motors, relays, and solenoids. It offers low on-resistance and is tested for Rg, complying with RoHS directives.Product AttributesBrand: VBsemiCerti...
High Power Gallium Nitride Wolfspeed CGHV14500P Transistor for 800 to 1600 Megahertz Radar Amplifier
Product Overview The MACOM CGHV14500 is a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for high efficiency, high gain, and wide bandwidth capabilities. It is ideally suited for DC - 1.8 GHz L-Band radar amplifier applications, with suitability for band-specific application...
Low RDS ON and Fast Switching N Channel MOSFET Winsok Semicon WSK40200 Designed for Power Electronics
Product OverviewThe WSK40200 is an N-Channel MOSFET utilizing advanced SGT MOSFET technology. It offers low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics, making it highly suitable for synchronous-rectification applications. Its design emphasizes ruggedness and ...
Low gate charge P channel MOSFET XCH BSS84 ideal for power management and synchronous buck circuits
Product OverviewThe BSS84 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and low gate charge, contributing to efficient operation. This device meets RoHS and Green Product requirements with full function reliability ...
switching N channel MOSFET XNRUSEMI XR15N10S with high cell density and low gate charge performance
Product OverviewThe XR15N10S is a high-performance N-channel MOSFET featuring extreme high cell density, offering excellent RDS(on) and gate charge for synchronous buck converter applications. It boasts super low gate charge, an advanced high cell density Trench technology, and excellent Cdv/dt ...
Small power switching and load switch solutions using XCH XCH3401A high cell density P channel MOSFET
Product OverviewThe XCH3401A is a high cell density trenched P-channel MOSFET designed for efficient performance in small power switching and load switch applications. It offers excellent RDS(ON) and efficiency, meeting RoHS and Green Product requirements with full reliability approval.Product ...
Low gate charge MOSFET XYD X2P2N040GLV8 designed for AC DC quick chargers and power management devices
Product OverviewThe X2P2N040GLV8 is a high-performance N-channel MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. It features low gate charge, low Ciss, and fast switching capabilities, making it 100% avalanche tested. This MOSFET is designed for applications such as synchronous rectification ...
Low Impedance Package Silicon Carbide MOSFET Wolfspeed C3M0350120J for High Voltage DC DC Converters
Product Overview The Wolfspeed C3M0350120J is a 3rd generation Silicon Carbide (SiC) MOSFET featuring a low impedance package with a dedicated driver source pin and 7mm of creepage distance. This technology offers high blocking voltage with low on-resistance and high-speed switching with low ...
VBsemi Elec AO4447A VB Power MOSFET P Channel Trench Type with Halogen Free Design and Low On Resistance
Product OverviewThe AO4447A-VB is a P-Channel Trench Power MOSFET designed for load switching applications. It offers high performance with low on-resistance and features like 100% Rg and UIS testing, making it suitable for notebook adaptors. This product is Halogen-free and RoHS compliant.Product ...
Silicon Carbide Half Bridge Module Wolfspeed CAB006A12GM3 for EV Chargers and Renewable Energy Systems
Product Overview The Wolfspeed CAB006A12GM3/CAB006A12GM3T is a 1200 V, 6 m Silicon Carbide Half-Bridge Module designed for high-frequency operation with ultra-low loss. It features zero turn-off tail current from the MOSFET, a normally-off, fail-safe device operation, and an Aluminum Nitride Ceramic ...
N Channel MOSFET Winsok Semicon WSR20N10 featuring trench technology and RoHS compliance for circuits
WSR20N10 N-Channel MOSFET The WSR20N10 is an N-Channel MOSFET utilizing advanced Trench MOSFET technology to achieve excellent RDS(ON) and low gate charge. This device is well-suited for battery protection and other switching applications, offering reliable and rugged performance. It is available in ...
100 Volt N Channel MOSFET VBsemi Elec FDS3672 NL VB designed for switching and low switching losses
Product OverviewThe FDS3672-NL-VB is an N-Channel 100 V (D-S) MOSFET designed for primary side switching applications. It features extremely low Qgd for reduced switching losses, and is 100% Rg and Avalanche tested. This RoHS compliant device is halogen-free, making it suitable for various ...
