Single FETs, MOSFETs
Power Management Transistor YANGJIE YJD18GP10AQ P Channel Enhancement Mode MOSFET with Excellent Uniformity
Product OverviewThe YJD18GP10AQ is a P-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing split gate trench MOSFET technology, it offers low RDS(on) and FOM, extremely low switching loss, and excellent stability and uniformity. This AEC-Q101 qualified transistor is designed for power management and portable equipment applications.Product AttributesBrand: Yangzhou Yangjie Electronic Technology Co., Ltd.Part Number:
power mosfet Winsok Semicon WSF35N20 n channel device with low leakage current and high reliability
Product OverviewThe WSF35N20 is a high-performance SGT N-Channel MOSFET characterized by its extreme cell density, offering excellent RDS(ON) and gate charge for synchronous buck converter applications. It meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval.Product AttributesBrand: WinsokCertifications: RoHS Compliant, Green Devices AvailableTesting: 100% UIS + Rg TestedReliability: Reliable and RuggedTechnical
Power MOSFET N channel Multi EPI Super Junction 650V 25A XCH GSA25N65EF designed for energy management
Product OverviewThe GSW/GSA25N65EF is a 650V, 25A N-channel Multi-EPI Super-Junction Power MOSFET from XCH Semiconductor. It features advanced technology for improved characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This series is designed for applications requiring high voltage and efficient power handling.Product AttributesBrand: XCH SemiconductorSeries: Multi-EPI Super-JunctionTechnical Specificati
Automotive Grade P Channel MOSFET YANGJIE YJG80GP06BQ with Split Gate Trench Technology and RoHS Compliance
Product OverviewThe YJG80GP06BQ is a P-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing split gate trench MOSFET technology, it offers low RDS(on) and FOM with excellent stability and uniformity. This component is designed for power management, portable equipment, and 12/24V automotive systems. It meets Moisture Sensitivity Level 3 and has an epoxy that meets UL 94 V-0 flammability rating. A suffix "Q" indicates
Load Switching and High Frequency Circuit Transistor YANGJIE YJD50N03A N Channel Enhancement Mode MOSFET
Product OverviewThe YJD50N03A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power LV MOSFET technology. It offers excellent heat dissipation with a high-density cell design for low RDS(ON). This transistor is suitable for high current load applications, load switching, hard switched and high frequency circuits, and uninterruptible power supply systems.Product AttributesBrand: Yangzhou Yangjie Electronic Technology Co., Ltd.Origin: ChinaCertificatio
Power Management and Motor Drive N Channel Transistor YANGJIE YJG80G06B Featuring Low RDS ON Design
Product OverviewThe YJG80G06B is a N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. It features Split Gate Trench MOSFET technology, an excellent package for heat dissipation, and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC Converters, power management functions, and industrial and motor drive applications.Product AttributesBrand: Yangzhou Yangjie Electronic Technology Co.
High speed switching N Channel MOSFET YANGJIE YJGD20G10B featuring low RDS ON and high density cell design
Product OverviewThe YJGD20G10B is a high-performance N-Channel and N-Channel Complementary MOSFET from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring a split gate trench MOSFET technology and a high-density cell design, it offers low RDS(ON) and high-speed switching capabilities. This MOSFET is suitable for various industrial applications, including DC-DC converters, power management functions, and industrial motor drives.Product AttributesBrand: Yangzhou Yangjie
P Channel 20 Volt MOSFET VBsemi Elec NTMS10P02R2G VB for portable devices battery switches and charger switches
Product OverviewThe NTMS10P02R2G-VB is a P-Channel 20-V (D-S) Trench Power MOSFET designed for portable devices. It offers low on-resistance and is 100% Rg tested, compliant with RoHS directives. Key applications include load switches, battery switches, and charger switches.Product AttributesBrand: VBsemiCertifications: Halogen-free According to IEC 61249-2-21 Definition, Compliant to RoHS Directive 2002/95/ECOrigin: TaiwanTechnical SpecificationsParameterSymbolTest
Copper Baseplate Silicon Nitride Insulator Wolfspeed CAB320M17XM3 Silicon Carbide Half Bridge Module
Product Overview The Wolfspeed CAB320M17XM3 is a 1700 V, 3.5 m Silicon Carbide Half-Bridge Module designed for high power density applications. It features a high junction temperature operation of up to 175 C and a low-inductance design of 6.7 nH. This module implements Wolfspeeds third-generation SiC MOSFET technology, incorporating a Silicon Nitride insulator and a copper baseplate. Its terminal layout facilitates direct bus bar connections, enabling simple, low-inductance
Synchronous buck converter P Channel MOSFET Winsok Semicon WSF12P04 featuring low gate charge and RDS
Product OverviewThe WSF12P04 is a high-performance P-Channel Trench MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This MOSFET is 100% EAS guaranteed and approved for full functional reliability.Product AttributesBrand: WinsokCertifications: RoHS Compliant, Green Devices AvailableTesting: 100% UIS TestedTechnical SpecificationsParameterSymbolRatingUnitsCondi
Silicon Carbide Half Bridge Module Wolfspeed CAB008A12GM3 Featuring Fail Safe Normally Off Operation
Product Overview The Wolfspeed CAB008A12GM3/CAB008A12GM3T is a 1200 V, 8 m Silicon Carbide Half-Bridge Module designed for high-frequency operation with ultra-low losses. It features zero turn-off tail current from the MOSFET and a normally-off, fail-safe device operation. The module utilizes an Aluminum Nitride Ceramic Substrate and is available with or without pre-applied thermal interface material. Its system benefits include enabling compact, lightweight designs,
6th Generation Silicon Carbide Diode Wolfspeed C6D50065D1 650 Volt 50 Amp Schottky Barrier Technology
Wolfspeed C6D50065D1: 6th Generation 650 V, 50 A Silicon Carbide Schottky Diode Product Overview The Wolfspeed C6D50065D1 is a 6th Generation 650 V, 50 A Silicon Carbide (SiC) Schottky Barrier Diode. Leveraging SiC technology, this diode offers significant performance advantages over traditional silicon-based solutions, enabling higher efficiency standards, increased switching frequencies, and improved power densities. Its design features include low forward voltage (VF) drop
High Voltage P Channel MOSFET VBsemi Elec VB2658 Offering 2.5 kVRMS Isolation and Low Thermal Resistance
Product OverviewThe VB2658 is a P-Channel 60-V (D-S) MOSFET designed for high-voltage applications. It features an isolated package with 2.5 kVRMS high voltage isolation, a sink to lead creepage distance of 4.8 mm, and a high operating temperature of 175 C. This MOSFET offers a dynamic dV/dt rating, low thermal resistance, and is available in a lead (Pb)-free option. It is suitable for various applications requiring robust high-voltage switching capabilities.Product
Trench Power MV MOSFET YANGJIE YJD25N10A N Channel Enhancement Mode Transistor for DC DC Converters
Product OverviewThe YJD25N10A is a N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation with a high-density cell design for low RDS(ON). This product is Moisture Sensitivity Level 1 and meets UL 94 V-0 flammability rating. It is Halogen Free and suitable for applications such as DC-DC Converters, Power management functions, and Backlighting.Product AttributesBrand: Yangzhou Yangjie Electronic
Synchronous Buck Converter N Channel MOSFET Winsok Semicon WSD80N10GDN56 featuring low gate charge
Product OverviewThe WSD80N10GDN56 is a high-performance N-Channel MOSFET featuring an extreme high cell density. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval.Product AttributesBrand: WinsokCertifications: RoHS Compliant, Green Devices AvailableTesting: 100% UIS Tested, 100% EAS guaranteedTechnical
Low RDS ON High Speed Switching N Channel Enhancement Mode Field Effect Transistor YANGJIE YJL3404B
Product OverviewThe YJL3404B is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power LV MOSFET technology. It offers a high-density cell design for low RDS(ON), high-speed switching, and is designed for applications such as battery protection, load switching, and power management. The device is moisture sensitivity level 1 and meets UL 94 V-0 flammability rating, with a halogen-free design.Product AttributesBrand: Yangzhou Yangjie Electronic Technology
Low Input Capacitance and Fast Switching Speed N Channel MOSFET YANGJIE 2N7002C with RoHS Compliance
Product OverviewThe 2N7002C is an N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power MV MOSFET technology. It is designed as a voltage-controlled small signal switch with low input capacitance and fast switching speed. This transistor offers low input/output leakage, is Moisture Sensitivity Level 1, and meets UL 94 V-0 flammability rating. It is also Halogen Free.Product AttributesBrand: Yangzhou Yangjie Electronic Technology Co., Ltd.Model: 2N7002COrig
High reliability Winsok Semicon WSF6032 N Channel and P Channel MOSFET for DC DC converter circuits
Product OverviewThe WSF6032 is a high-performance N-Channel and P-Channel MOSFET featuring extreme high cell density, offering excellent RDSON and gate charge for synchronous buck converter applications. It meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approved. This device is ideal for high-frequency point-of-load synchronous buck converters, networking DC-DC power systems, and load switches.Product AttributesBrand:
Robust Power MOSFET Winsok Semicon WSK55N20 N Channel Device with Superior Electrical Characteristics
Product OverviewThe WSK55N20 is a high-performance N-Channel MOSFET featuring extreme cell density, offering excellent RDS(ON) and gate charge characteristics. It is ideally suited for synchronous buck converter applications. This product meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval.Product AttributesBrand: WinsokCertifications: RoHS Compliant, Green ProductTesting: 100% UIS + Rg Tested, 100% EAS GuaranteedDevice
High Current P Channel MOSFET XYD X4407IA for Portable Devices and Desktop PC Power Management
Product OverviewThe X4407IA is a P-CHANNEL MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. It offers high power and current handling capability with low gate charge, making it suitable for switch and power management applications in portable and desktop PCs. This lead-free product is designed for efficient operation.Product AttributesBrand: Xiamen XYDFAB Integrated Circuit Co., Ltd.Origin: ChinaProduct Code: X4407IAPackage: SOP-8LCertifications: Lead free product is
