Single FETs, MOSFETs

Product OverviewThe X17P2P012TLN6 is a P-CHANNEL MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. It offers high power and current handling capability, low gate charge, and is a lead-free product. This MOSFET is suitable for applications such as PWM applications, load switching, and power management.Product AttributesBrand: Xiamen XYDFAB Integrated Circuit Co., Ltd.Origin: XiamenProduct Code: X17P2P012TLN6Package: DFN2*2-6LPackaging: Tape & ReelTechnical SpecificationsP

Product OverviewThe WSF50N02 is a high-performance N-Channel MOSFET featuring an extreme high cell density trench design. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This product meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. It is suitable for power management in industrial DC/DC converters and high-frequency switching and synchronous

Product OverviewThe X9N90DHA3 is an N-Channel MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. Designed for high-voltage applications, it features low gate charge, low Ciss, and fast switching capabilities. This MOSFET is suitable for use in LED power supplies, cell phone chargers, and standby power systems.Product AttributesBrand: Xiamen XYDFAB Integrated Circuit Co., Ltd.Origin: ChinaModel: X9N90DHA3Package: TO-247-3LPackaging: TubeTechnical SpecificationsParameterSym

Product OverviewThe SI2302B is a Trench FET Power MOSFET designed for load switching in portable devices, DC-DC converters, and other applications. It offers efficient power management with its robust design and reliable performance.Product AttributesBrand: GMC (implied by www.tw-gmc.com)Package: SOT-23 Plastic-Encapsulate MOSFETOrigin: Taiwan (implied by tw-gmc.com)Technical SpecificationsModelParameterValueUnitTest ConditionsSI2302BDrain-Source Breakdown Voltage (V(BR)DSS

Product OverviewThe YJG105N03A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation due to its package design and a high-density cell design for low RDS(ON). This transistor is suitable for applications such as DC-DC Converters, Power management functions, and Backlighting.Product AttributesBrand: Yangzhou Yangjie Electronic Technology Co., Ltd.Origin: ChinaCertifications: RoHS CompliantTech

UNISONIC TECHNOLOGIES CO., LTD 4N150 Power MOSFETThe UTC 4N150 is a high voltage power MOSFET designed for high-speed switching applications. It offers improved characteristics such as fast switching times, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is ideal for use in power supplies, PWM motor controls, high-efficiency AC to DC converters, and bridge circuits.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDProduct

Product OverviewThe AO4812-VB is a dual N-Channel Trench Power MOSFET designed for various applications. It features 100% UIS and Rg tested, compliant with RoHS Directive 2002/95/EC, and is halogen-free. This MOSFET is suitable for low current DC/DC applications, set-top boxes, and other similar power management needs.Product AttributesBrand: VBsemiCertifications: Halogen-free (IEC 61249-2-21), RoHS Directive 2002/95/ECType: Dual N-Channel Trench Power MOSFETPackage: SO

Product OverviewThe YJG60G15HJ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features an advanced trench cell design for high density and low RDS(ON), excellent heat dissipation, and a moisture sensitivity level 1 rating. It is suitable for power switching applications, uninterruptible power supplies, and DC-DC converters.Product AttributesBrand: Yangzhou Yangjie Electronic Technology Co., Ltd.Origin:

Product OverviewThe YJT300G10H is a N-Channel Enhancement Mode Field Effect Transistor featuring Split Gate Trench MOSFET technology for low RDS(ON) and excellent heat dissipation. It is designed for high-density cell applications and meets UL 94 V-0 flammability rating. This transistor is ideal for load switching, battery management, and solar applications.Product AttributesBrand: Yangzhou Yangjie Electronic Technology Co., Ltd.Model: YJT300G10HTechnology: Split Gate Trench

Product Overview The WSR55N20 is an N-Channel MOSFET utilizing advanced Planar MOSFET technology. It offers excellent RDS ON and low gate charge, making it suitable for battery protection and other switching applications. This device is reliable, rugged, and available in lead-free and green (RoHS compliant) versions, with an MSL1 moisture sensitivity level. Product Attributes Brand: Winsok Certifications: RoHS Compliant Moisture Sensitivity Level: MSL1 (per JEDEC J-STD-020D)

Product OverviewThe YJL3134KAT is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power LV MOSFET technology. It offers high power and current handling capabilities, making it suitable for PWM applications and load switching. This ESD protected device can withstand up to 2.0KV (HBM).Product AttributesBrand: Yangzhou Yangjie Electronic Technology Co., Ltd.Origin: ChinaCertifications: RoHS CompliantTechnical SpecificationsParameterSymbolConditionsMinTypMa

Product OverviewThe XRS80N04HF is a high-performance N-Channel Fast Switching MOSFET featuring Split Gate Trench MOSFET technology. It offers excellent heat dissipation through its advanced package design and a high-density cell structure for low RDS(ON). This MOSFET is ideal for DC-DC converters, power management functions, and synchronous-rectification applications, providing efficient and reliable power control.Product AttributesBrand: power-mos.comTechnology: Split Gate

Product DescriptionThe XCH4N65F is a silicon N-channel Enhanced VDMOSFET manufactured using self-aligned planar technology. This design reduces conduction losses, improves switching performance, and enhances avalanche energy. It is suitable for various power switching circuits, enabling system miniaturization and higher efficiency. The device is packaged in a TO-251 package and complies with RoHS standards.Product AttributesBrand: XCH4N65FMaterial: Silicon N-Channel Power

Product OverviewThe IRL540NSPBF-VB is a high-performance N-Channel 100-V (D-S) Trench Power MOSFET designed for demanding applications. It features a low thermal resistance package and a maximum operating junction temperature of 175 C, ensuring reliability under high stress conditions. This MOSFET is suitable for various power switching applications.Product AttributesBrand: VBsemiCertifications: RoHS CompliantPackage Type: D2PAK (TO-263)Technical SpecificationsParameterSymbol

Product OverviewThe XCH5N65 Series is a N-Channel Enhancement Mode Power MOSFET designed for high-efficiency power switching applications. It features fast switching speeds, low ON resistance, and low gate charge, making it ideal for power switch circuits in adaptors and chargers. The MOSFET is available in multiple package types (TO-220F, TO-220AB, TO-263, TO-252, TO-251) and is constructed with molded plastic meeting UL Flammability Classification Rating 94V-0. It is lead

Product OverviewThe XT ELECTRONICS 2N7002K is an N-Channel SMD MOSFET designed for voltage-controlled small signal switching. It features a high-density cell design for ultra-low on-resistance, offering a rugged and reliable solution with high saturation current capability. This ESD-protected MOSFET is ideal for load switching in portable devices and DC/DC converters.Product AttributesBrand: XT ELECTRONICSProduct Code: 2N7002KPackage Type: SOT-23Marking: 72KTechnical

Product OverviewThe BRT30N70P3 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is designed for applications such as load switching, PWM applications, and power management, providing efficient performance with a breakdown voltage of 30V and a continuous drain current of 70A.Product AttributesBrand: XTX Technology Inc.Product Code: BRT30N70P3Package: TO-252

X7P5N15GHT1 N-CHANNEL MOSFETThe X7P5N15GHT1 is an N-CHANNEL MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. It offers extremely low on-resistance and excellent low Ciss, making it suitable for applications such as networking, load switches, LED applications, and quick charge systems.Product AttributesBrand: Xiamen XYDFAB Integrated Circuit Co., Ltd.Product Name: X7P5N15GHT1Package: TOLL-1LPackaging: Tape and reelTechnical SpecificationsParameterSymbolValues (Unit)Note

Product OverviewThe SUD50P06-15L-GE3-VB is a P-Channel Trench Power MOSFET designed for load switching applications. It offers a 60V drain-source voltage and low on-state resistance, making it suitable for efficient power management.Product AttributesBrand: VBsemiMaterial Categorization: RoHS compliant, Halogen-freeTechnical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max.UnitAbsolute Maximum RatingsDrain-Source VoltageVDS-60VGate-Source VoltageVGS±20VContinuous Drain

Product OverviewThe BRP100N245P6 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It offers high performance with 100V drain-source voltage and 245A continuous drain current. Key advantages include ultra-low RDS(ON) of < 1.2m, low gate charge, and lead-free construction. This MOSFET is designed for demanding applications such as motor driving in power tools, e-vehicles, and robotics, as well as current switching in DC/DC and AC/DC converters and power