Single FETs, MOSFETs
Low Input Capacitance N Channel Enhancement Mode Transistor Slkor MMBF170L in Compact SOT 23 Package
Product OverviewN-Channel Enhancement Mode Field Effect Transistor designed for low on resistance, low gate threshold voltage, and low input capacitance. Features ESD protection up to 2KV. Packaged in a SOT-23 plastic package.Product AttributesBrand: slkormicroModel: MMBF170LMarking Code: 6ZPackage: SOT-23Technical SpecificationsParameterSymbolValueUnitMin.Max.Drain-Source Breakdown VoltageBVDSS60V60-Zero Gate Voltage Drain CurrentIDSS-µA-1Gate Source Leakage CurrentIGSS-µA-
High Voltage N channel MOSFET Slkor SL5N100F with 1000V Drain Source Voltage and Minimized Gate Charge
Product OverviewN-channel MOSFET with 1000V drain-source voltage, low on-resistance (< 4.2 ), and 5A continuous drain current. Features extremely high dv/dt capability, 100% avalanche tested, minimized gate charge, and very low intrinsic capacitances, ensuring good manufacturing repeatability. Ideal for switching applications.Product AttributesBrand: SLKOR MicroOrigin: Not SpecifiedMaterial: Not SpecifiedColor: Not SpecifiedCertifications: Not SpecifiedTechnical Specification
Switching P Channel MOSFET SLkor SL60P03D with Low On Resistance and High Avalanche Energy Capacity
Product OverviewThe SL60P03D is a P-Channel MOSFET designed for high-density cell applications, offering ultra-low RDS(ON). It features fully characterized avalanche voltage and current, ensuring good stability and uniformity with high EAS. This MOSFET is ideal for battery and loading switching applications and comes in an excellent package for good heat dissipation.Product AttributesBrand: SLKORMicroModel: SL60P03DPackage: TO-252Origin: Not specifiedMaterial: Not specifiedCo
N Channel 650V MOSFET Slkor SL8N65CD featuring low on resistance and high avalanche energy tolerance
Product OverviewThis 650V N-Channel Super-JMOSFET is manufactured using Slkor's advanced Superjunction MOSFET technology. This technology is optimized for reduced on-state resistance, superior switching performance, and enhanced ruggedness against high energy pulses in avalanche and commutation modes. It is well-suited for high-efficiency switched-mode power supplies.Product AttributesBrand: SlkorTechnology: Super-JMOSFETTechnical SpecificationsParameterSymbolTest ConditionsM
P Channel MOSFET Slkor SL2307 offering low gate charge suitable for load switch and PWM circuits
Product OverviewThe SL2307 is a P-Channel MOSFET utilizing advanced trench technology. It offers excellent RDS(on) with low gate charge, making it suitable for load switch and PWM applications.Product AttributesBrand: SLKORMicroOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitDrain-Source VoltageVDS-30VGate-Source VoltageVGS±20VContinuous Drain CurrentID-4.1ADrain
Trench Technology P Channel MOSFET Slkor FDN336P for Low Resistance and Gate Charge Applications
Product OverviewThe FDN336P is a P-Channel MOSFET featuring leading trench technology for low RDS(on) and low Gate Charge. It is designed for applications such as video monitors and power management.Product AttributesBrand: slkormicroModel: FDN336PPackage: SOT-23Technical SpecificationsSymbolParameterConditionMinTypMaxUnitVDSDrain-Source Breakdown VoltageVGS=0VID=-250A-20----VIDSSZero Gate Voltage Drain CurrentVDS=-16VVGS=0V-----1.0uAIGSSGate-Body Leakage CurrentVGS=8VVDS=0V-
N Channel MOSFET Slkor SL5N50D featuring low gate charge and 98 watt power dissipation for industrial
Product OverviewThe SL5N50D is an N-Channel MOSFET designed for high-performance applications. It features low RDS(ON) of 1.5 (Max) at VGS=10V, low gate charge (Typical 18.5nC), improved dv/dt capability, and is 100% avalanche tested. This MOSFET is suitable for various power switching applications requiring efficient and reliable performance.Product AttributesBrand: SLKORMicroModel: SL5N50DPackage: TO-252Technical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitsMAX
Power MOSFET Slkor SL9435A Featuring Low Gate Threshold Voltage and High Density Cell Design
Product OverviewThe SL9435A is a Trench Power MV MOSFET featuring an excellent package for heat dissipation and a high-density cell design for low RDS(ON). It is designed for applications such as DC-DC converters and power management functions.Product AttributesBrand: SLKORMicroDevice Code: 9435ATechnical SpecificationsParameterConditionMinTypMaxUnitDrain-Source Breakdown VoltageVGS=0VID=-250A-30----VZero Gate Voltage Drain CurrentVDS=-30VVGS=0V-----1uAGate-Body Leakage
Compact Low RDSon N Channel MOSFET Slkor SL2302T for Battery Management and Power Switching Circuits
Product OverviewThe SL2302T is an N-Channel MOSFET designed for load and power switching applications. It features a surface mount package (SOT-523) and offers low RDS(on) with low logic-level gate drive operation. This ESD-protected device is ideal for interfacing switching, battery management in ultra-small portable electronics, and logic level shifting.Product AttributesBrand: SLKOR MicroPackage: SOT-523Technical SpecificationsParameterSymbolTest ConditionMin.Typ.Max
High Speed Switching Slkor BSS8402DW 50V N Channel and P Channel MOSFET for Portable Electronics
Product OverviewThe BSS8402DW is a 50V N-Channel and P-Channel MOSFET designed for high-side switching applications. It features low threshold voltage and fast switching speeds, making it suitable for load/power switching, interfacing, and battery management in ultra-small portable electronics. It also supports logic level shifting.Product AttributesBrand: slkormicro (implied from URL)Model: BSS8402DWTechnical SpecificationsParameterN-Channel UnitP-Channel UnitConditionMinTyp
Power Management Device Slkor SL30N02D N Channel MOSFET Featuring Low Gate Charge and 30 Volt Rating
Product OverviewThis N-channel enhancement mode power MOSFET utilizes advanced trench technology, offering excellent RDS(ON) and low gate charge. It is RoHS compliant and designed for efficient power management applications.Product AttributesBrand: SLKORMicro (implied by URL)Certifications: RoHSTechnical SpecificationsParameterSymbolConditionsMin.Typ.Max.UnitGeneral DescriptionDrain-Source VoltageVDS30VGate-Source VoltageVGS±20VDrain Current-Continuous (TC=25)ID150ADrain
N Channel MOSFET Slkor SL0C60A 25V 60A Trench Power LV MOSFET for PWM Applications and Load Switching
Product OverviewThe SL0C60A is a 25V/60A N-Channel MOSFET featuring Trench Power LV MOSFET technology. It offers high power and current handling capability with low gate charge, making it suitable for PWM applications, power management, and load switching.Product AttributesBrand: SLKOR MicroModel: SL0C60APackage: PDFN3X3-8LTechnology: Trench Power LV MOSFETDate: Rev.1 -- 21 June 2017Technical SpecificationsParameterSymbolConditionMinTypMaxUnitAbsolute Maximum RatingsDrain
power MOSFET Slkor SL12N100T with fast switching low gate charge and 100 percent avalanche tested
Product OverviewThis product is a high-performance MOSFET designed for efficient power switching applications. It features low gate charge, low Crss, and fast switching speeds, making it ideal for demanding power supply designs. The device is 100% avalanche tested and offers improved dv/dt capability, ensuring reliability and robustness in operation. It is RoHS compliant.Product AttributesBrand: SL K (implied from URL)Certifications: RoHS productTechnical SpecificationsParame
N Channel Power MOSFET Slkor SL3N06 suitable for various electronic switching and amplification uses
Product OverviewThe SL3N06 is an N-Channel Power MOSFET designed for various electronic applications. It offers reliable performance with key electrical and thermal characteristics suitable for power switching and amplification tasks.Product AttributesBrand: SL KORMICROModel: SL3N06Type: N-Channel Power MOSFETPackage: SOT-23Technical SpecificationsCharacteristicSymbolMinTypMaxUnitConditionsDrain-Source Breakdown VoltageBVDSS60VID =250uA,VGS=0VGate Threshold VoltageVGS(th
Power switching MOSFET Slkor SL1002B with low gate charge and enhanced efficiency in compact design
Product OverviewThe FKN0008 is a high cell density trenched N-channel MOSFET designed for excellent RDSON and efficiency in small power switching and load switch applications. It meets RoHS and Green Product requirements with full function reliability approval. Key advantages include super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density trench technology.Product AttributesGreen Device AvailableMeets RoHS and Green Product requirementsTechnical
High Current N Channel MOSFET Slkor SL53N10Q with 55 to 150 Degree Celsius Storage Temperature Range
Product OverviewThe SL53N10Q is a N-Channel Enhancement Mode MOSFET designed for fast switching speeds, reliability, and ruggedness. It is ROHS Compliant & Halogen-Free, 100% UIS Tested and Rg Tested. This MOSFET is suitable for applications such as motor drivers and DC-DC converters.Product AttributesBrand: SLKORMicro (implied by URL)Certifications: ROHS Compliant & Halogen-Free, 100% UIS Tested, Rg TestedTechnical SpecificationsParameterSymbolN-Channel UnitTest ConditionsMi
Voltage Controlled Small Signal Slkor 2N7002KW N Channel MOSFET with High Saturation Current Rating
Product OverviewThe 2N7002KW is an N-Channel MOSFET designed for high-density cell design, offering low RDS(on). It functions as a voltage-controlled small-signal switch, known for its ruggedness, reliability, and high saturation current capability. This ESD-protected MOSFET is ideal for load switching in portable devices and DC/DC converters.Product AttributesBrand: SLKORMicro (implied by website)Model: 2N7002KWPackage: SOT-323Channel Type: N-ChannelTechnical SpecificationsP
power MOSFET Slkor SL15N60CF optimized for conduction loss and avalanche robustness in power electronics
Product OverviewThis Power MOSFET utilizes Slkor's Advanced Super-Junction technology, designed to optimize conduction loss, enhance switching performance, and ensure robustness in avalanche and commutation modes. It is ideal for high-efficiency AC/DC power conversion in switching mode operations.Product AttributesBrand: SlkorTechnology: Advanced Super-JunctionCertifications: Pb-free and RoHS CompliantTechnical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitsAbsolut
Low RDS ON Power MOSFET Slkor BSS169 100V N Channel TrenchFET for Surface Mount Electronic Circuits
Product OverviewThe BSS169 is a 100V N-Channel TrenchFET Power MOSFET designed for surface mount applications. It features low RDS(ON) and is suitable for various electronic circuits requiring efficient power switching.Product AttributesBrand: slkormicroModel: BSS169Package: SOT-23Technical SpecificationsParameterConditionsMinMaxUnitsDrain-source breakdown voltageVGS = 0V , ID = 250A100VGate threshold voltageVDS = 50V , VGS = VGS , ID = 250A1.22.8VDrain-source on-resistanceVG
Low RDS ON P Channel MOSFET Slkor SL0D05AP Ideal for Power Management and Converter Circuits
Product OverviewThe SL0D05AP is a -30V/-5A P-Channel MOSFET featuring Trench Power MV MOSFET technology for excellent heat dissipation and a high-density cell design for low RDS(ON). It is ideal for DC-DC converters and power management functions.Product AttributesBrand: SLKORMicroModel: SL0D05APTechnical SpecificationsSymbolParameterConditionMinTypMaxUnitAbsolute Maximum RatingsVDSDrain-Source Voltage-30VVGSGate-Source Voltage±20VTJMaximum Junction Temperature150°CTSTGStorag
