Single FETs, MOSFETs

Product OverviewThe FKN3601 is a high cell density trenched P-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and efficiency, making it ideal for small power switching and load switch applications. This device meets RoHS and Green Product requirements and has undergone full function reliability approval.Product AttributesGreen Device AvailableSuper Low Gate ChargeExcellent CdV/dt effect declineAdvanced high cell density Trench technologyTe

Product OverviewThe TPP60R840C, TPA60R840C, TPU60R840C, TPD60R840C, TPC60R840C, and TPB60R840C are 600V Super-Junction Power MOSFETs designed for high-efficiency applications. They feature a very low FOM (RDS(on)Qg), are 100% avalanche tested, and are RoHS compliant. These MOSFETs are ideal for Switch Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS), and Power Factor Correction (PFC) circuits.Product AttributesBrand: Wuxi Unigroup Microelectronics CompanyOrigi

Product Overview The YJQD30P02A is a P-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Trench Power MV MOSFET technology and a high-density cell design, it offers low RDS(ON) and high-speed switching capabilities. This transistor is suitable for applications such as battery protection, load switching, and power management. Product Attributes Brand: Yangzhou Yangjie Electronic Technology Co., Ltd. Model:

Product OverviewThe X6P5N065THB3 is an N-channel MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. It offers high power and current handling capability, low gate charge, and is 100% UIS and DVDS tested. This MOSFET is ideal for DC/DC converters and high-frequency switching applications, including synchronous rectification.Product AttributesBrand: Xiamen XYDFAB Integrated Circuit Co., Ltd.Product Name: X6P5N065THB3Package: TO-220-3LCertifications: Lead free product is

Product OverviewThe X5N030TLE2C is an N-CHANNEL MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. It features low gate charge, low Ciss, and fast switching, making it suitable for applications like synchronous rectification for AC/DC quick chargers, battery management, and uninterruptible power supplies (UPS). It is 100% avalanche tested.Product AttributesBrand: Xiamen XYDFAB Integrated Circuit Co., Ltd.Origin: XiamenModel: X5N030TLE2CPackage: TO-252-2LPackaging: Tape

BRP100N220P6 N-channel Enhancement Mode Power MOSFET The BRP100N220P6 is an N-channel enhancement mode Power MOSFET from XTX Technology Inc., designed for high-performance applications. It features ultra-low RDS(ON) and low gate charge, making it suitable for motor driving in power tools, e-vehicles, and robotics, as well as current switching in DC/DC and AC/DC converters, and power management systems. The device is lead-free and comes in a TOLL-8 package. Product Attributes

Product OverviewThe XR7N50FR is an Advanced VD N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This MOSFET is 100% EAS guaranteed with full function reliability approval.Product AttributesBrand: power-mos.comCertifications: RoHS, Green Device AvailableEAS Guaranteed: 100%Technical SpecificationsPart NumberBVDSS (V)RDS(ON) ()ID (A)PackageXR7N50FR5001

Product OverviewThe BRT40N60P3 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is designed for applications such as load switching, PWM applications, and power management, providing efficient performance with a breakdown voltage of 40V and a continuous drain current of 60A.Product AttributesBrand: XTX Technology Inc.Product Code: BRT40N60P3Package: TO-252

Product Overview The Wolfspeed CCB021M12FM3 and CCB021M12FM3T are 1200 V, 21 m Silicon Carbide Six-Pack Modules designed for high-efficiency power conversion applications. These modules offer ultra-low loss and high-frequency operation, featuring zero turn-off tail current from the MOSFET and normally-off, fail-safe device operation. They are ideal for DC-DC converters, EV chargers, high-efficiency converters/inverters, renewable energy systems, and smart-grid applications.

Product OverviewThe YJG25GP10AQ is a P-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing split gate trench MOSFET technology, it offers low RDS(on) and FOM, extremely low switching loss, and excellent stability and uniformity. This AEC-Q101 qualified transistor is designed for power management applications and portable equipment.Product AttributesBrand: Yangzhou Yangjie Electronic Technology Co., Ltd.Model:

Product Overview The CBB032M12FM3 and CBB032M12FM3T are 1200 V, 32 m Silicon Carbide Full-Bridge Modules designed for high-frequency operation with ultra-low loss characteristics. These normally-off, fail-safe devices offer zero turn-off tail current from the MOSFET, enabling compact, lightweight, and more efficient systems. Key applications include DC-DC converters, EV chargers, high-efficiency converters/inverters, renewable energy systems, and smart-grid/grid-tied

Product Overview The MACOM CGH40045 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for broadband RF and microwave applications. Operating from a 28V rail, it offers high efficiency, high gain, and wide bandwidth capabilities, making it suitable for linear and compressed amplifier circuits. The CGH40045 is available in flange and pill package types and is ideal for applications including 2-Way Private Radio, Broadband Amplifiers,

Product OverviewThe XCH13N50F is a silicon N-channel Enhanced VDMOSFET manufactured using self-aligned planar technology. This design minimizes conduction losses, enhances switching performance, and improves avalanche energy. It is suitable for various power switching circuits, contributing to system miniaturization and increased efficiency. The device comes in a RoHS-compliant TO-220F package.Product AttributesBrand: XCHMaterial: Silicon N-ChannelPackage: TO-220FCertificatio

Product OverviewThe YJS10G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing split gate trench MOSFET technology, it offers low RDS(on) & FOM, extremely low switching loss, and excellent stability and uniformity. This product is designed for power switching applications, uninterruptible power supplies, and DC-DC converters. It meets UL 94 V-0 flammability rating and is Halogen Free.Product AttributesBra

Product OverviewThe YJGD20G10A is a N-Channel Enhancement Mode Field Effect Transistor featuring split gate trench MOSFET technology for high density cell design, resulting in low RDS(ON) and high-speed switching. It is suitable for DC-DC converters, power management functions, and industrial and motor drive applications.Product AttributesBrand: Yangzhou Yangjie Electronic Technology Co., Ltd.Certifications: RoHSTechnical SpecificationsParameterSymbolN-Die1N-Die2UnitAbsolute

Product OverviewThe YJG40G10AQ is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor is designed for power switching applications, uninterruptible power supplies, and DC-DC converters. It is AEC-Q101 qualified and meets UL 94 V-0 flammability rating

Product OverviewThe BSC019N04NS G-VB is a high-performance N-Channel Trench Power MOSFET designed for efficient synchronous rectification and secondary-side DC/DC applications. It features 100% Rg and UIS tested, offering robust performance and reliability. This device is also halogen-free, adhering to IEC 61249-2-21 standards.Product AttributesBrand: VBsemiCertifications: Halogen-free (IEC 61249-2-21 Definition)Technical SpecificationsParameterSymbolTest ConditionsMin.Typ

Product OverviewThe Yangzhou Yangjie Electronic Technology Co., Ltd. YJG100G08A is an N-Channel Enhancement Mode Field Effect Transistor designed for various applications. It features a split gate trench MOSFET technology, excellent heat dissipation package, and high-density cell design for low RDS(ON). This transistor is 100% EAS and VDS Tested, meeting UL 94 V-0 flammability rating and is Halogen Free. It is recommended for new designs.Product AttributesBrand: Yangzhou

Product OverviewThe YJG40G10B is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, offering low RDS(ON) due to its high-density cell design and excellent heat dissipation through its package. This transistor is suitable for power switching applications, uninterruptible power supplies, and DC-DC converters. It is 100% EAS and VDS tested, with a Moisture Sensitivity Level

Yangjie YJG2D7G06A N-Channel Enhancement Mode Field Effect TransistorThe YJG2D7G06A is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, an excellent package for heat dissipation, and a high-density cell design for low RDS(ON). This transistor is designed for power switching applications, uninterruptible power supplies, and DC-DC converters. It meets Moisture