Single FETs, MOSFETs
High reliability P channel MOSFET XCH XCH2309 suitable for various fast switching power applications
Product OverviewThe FKN3601 is a high cell density trenched P-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and efficiency, making it ideal for small power switching and load switch applications. This device meets RoHS and Green Product requirements and has ...
Power MOSFET 600V WUXI UNIGROUP MICRO TPA60R840C Featuring Low On Resistance and RoHS Compliant Design
Product OverviewThe TPP60R840C, TPA60R840C, TPU60R840C, TPD60R840C, TPC60R840C, and TPB60R840C are 600V Super-Junction Power MOSFETs designed for high-efficiency applications. They feature a very low FOM (RDS(on)Qg), are 100% avalanche tested, and are RoHS compliant. These MOSFETs are ideal for ...
Load Switching and Battery Protection P Channel MOSFET YANGJIE YJQD30P02A with High Speed Switching
Product Overview The YJQD30P02A is a P-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Trench Power MV MOSFET technology and a high-density cell design, it offers low RDS(ON) and high-speed switching capabilities. This transistor is ...
Low gate charge MOSFET XYD X6P5N065THB3 with 65 Volt drain source voltage and 91 Ampere continuous current rating
Product OverviewThe X6P5N065THB3 is an N-channel MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. It offers high power and current handling capability, low gate charge, and is 100% UIS and DVDS tested. This MOSFET is ideal for DC/DC converters and high-frequency switching applications, ...
Power MOSFET XYD X5N030TLE2C featuring low Ciss and fast switching ideal for battery management systems
Product OverviewThe X5N030TLE2C is an N-CHANNEL MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. It features low gate charge, low Ciss, and fast switching, making it suitable for applications like synchronous rectification for AC/DC quick chargers, battery management, and uninterruptible power ...
High Current Power MOSFET XTX BRP100N220P6 N-channel Enhancement Mode for Robotics and Motor Control
BRP100N220P6 N-channel Enhancement Mode Power MOSFET The BRP100N220P6 is an N-channel enhancement mode Power MOSFET from XTX Technology Inc., designed for high-performance applications. It features ultra-low RDS(ON) and low gate charge, making it suitable for motor driving in power tools, e-vehicles...
Durable MOSFET XNRUSEMI XR7N50FR with 360 millijoule avalanche energy and 7A avalanche current rating
Product OverviewThe XR7N50FR is an Advanced VD N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This MOSFET is 100% EAS guaranteed with full function reliability approval...
High current n channel mosfet XTX BRT40N60P3 with low RDS ON and pulsed drain current up to 240 amps
Product OverviewThe BRT40N60P3 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is designed for applications such as load switching, PWM applications, and power management, ...
1200 Volt Silicon Carbide Six Pack Module Wolfspeed CCB021M12FM3 for Power Conversion Systems
Product Overview The Wolfspeed CCB021M12FM3 and CCB021M12FM3T are 1200 V, 21 m Silicon Carbide Six-Pack Modules designed for high-efficiency power conversion applications. These modules offer ultra-low loss and high-frequency operation, featuring zero turn-off tail current from the MOSFET and ...
Power Management P Channel Enhancement Mode Transistor YANGJIE YJG25GP10AQ with Split Gate Technology
Product OverviewThe YJG25GP10AQ is a P-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing split gate trench MOSFET technology, it offers low RDS(on) and FOM, extremely low switching loss, and excellent stability and uniformity. This AEC...
Silicon Carbide Full Bridge Module Wolfspeed CBB032M12FM3T 1200 Volt 32 Milli Ohm Power Device
Product Overview The CBB032M12FM3 and CBB032M12FM3T are 1200 V, 32 m Silicon Carbide Full-Bridge Modules designed for high-frequency operation with ultra-low loss characteristics. These normally-off, fail-safe devices offer zero turn-off tail current from the MOSFET, enabling compact, lightweight, ...
Gallium Nitride Broadband RF Transistor Wolfspeed CGH40045P for Microwave and Wireless Communication
Product Overview The MACOM CGH40045 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for broadband RF and microwave applications. Operating from a 28V rail, it offers high efficiency, high gain, and wide bandwidth capabilities, making it suitable for linear and ...
Silicon N Channel Power Transistor XCH XCH13N50F with 500V Drain to Source Voltage and TO 220F Package
Product OverviewThe XCH13N50F is a silicon N-channel Enhanced VDMOSFET manufactured using self-aligned planar technology. This design minimizes conduction losses, enhances switching performance, and improves avalanche energy. It is suitable for various power switching circuits, contributing to ...
Power Switching N Channel MOSFET YANGJIE YJS10G06A with Split Gate Trench Technology and RoHS Compliance
Product OverviewThe YJS10G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing split gate trench MOSFET technology, it offers low RDS(on) & FOM, extremely low switching loss, and excellent stability and uniformity. This product ...
Power Management MOSFET YANGJIE YJGD20G10A N Channel Enhancement Mode with Split Gate Trench Design
Product OverviewThe YJGD20G10A is a N-Channel Enhancement Mode Field Effect Transistor featuring split gate trench MOSFET technology for high density cell design, resulting in low RDS(ON) and high-speed switching. It is suitable for DC-DC converters, power management functions, and industrial and ...
High Current N Channel MOSFET YANGJIE YJG40G10AQ with Excellent Thermal and Electrical Properties
Product OverviewThe YJG40G10AQ is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This ...
High reliability N Channel Trench MOSFET VBsemi Elec BSC019N04NS G VB for power conversion solutions
Product OverviewThe BSC019N04NS G-VB is a high-performance N-Channel Trench Power MOSFET designed for efficient synchronous rectification and secondary-side DC/DC applications. It features 100% Rg and UIS tested, offering robust performance and reliability. This device is also halogen-free, adhering ...
N Channel Enhancement Mode Transistor YANGJIE YJG100G08A with High Density Cell Design and Low RDS
Product OverviewThe Yangzhou Yangjie Electronic Technology Co., Ltd. YJG100G08A is an N-Channel Enhancement Mode Field Effect Transistor designed for various applications. It features a split gate trench MOSFET technology, excellent heat dissipation package, and high-density cell design for low RDS...
N Channel MOSFET YANGJIE YJG40G10B Featuring Low RDS ON High Density Cell and Halogen Free Materials
Product OverviewThe YJG40G10B is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, offering low RDS(ON) due to its high-density cell design and excellent heat dissipation through its package. ...
Power Switching N Channel Enhancement Mode Field Effect Transistor YANGJIE YJG2D7G06A with Low RDS
Yangjie YJG2D7G06A N-Channel Enhancement Mode Field Effect TransistorThe YJG2D7G06A is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, an excellent package for heat dissipation, ...
