Single FETs, MOSFETs

Product OverviewThe TX50N06 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced technology is optimized to minimize on-state resistance, making these devices particularly suitable for low-voltage applications. Key advantages include ultra-low RDS(on) due to high-density cell design and excellent package performance for effective heat dissipation.Product AttributesBrand: XDSSEMIPackage Type: TO

IRFR5410TRPBF-VB P-Channel 100 V MOSFET The IRFR5410TRPBF-VB is a P-Channel Trench Power MOSFET designed for power switching applications. It offers high performance with features such as 100% Rg and UIS tested, and compliance with RoHS Directive 2002/95/EC. This MOSFET is suitable for use in DC/DC converters and other power switching circuits. Product Attributes Brand: VBsemi Certifications: Halogen-free (IEC 61249-2-21), RoHS Directive 2002/95/EC compliant Package: TO-252

BRP80N120P8 N-channel Enhancement Mode Power MOSFET The BRP80N120P8 is an N-channel enhancement mode power MOSFET from XTX Technology Inc. It offers an 80V drain-to-source voltage and a continuous drain current of 120A. Key features include ultra-low RDS(ON) of less than 5.5m at VGS = 10V, low gate charge, and lead-free construction. This MOSFET is designed for applications such as motor driving in power tools, e-vehicles, and robotics, as well as current switching in DC/DC

Product OverviewThe YJG110G10B is a N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology with a high-density cell design for low RDS(ON) and excellent heat dissipation. This transistor is suitable for power switching applications, uninterruptible power supplies, and DC-DC converters. It is 100% EAS and VDS tested, moisture sensitivity level 1, and meets UL 94 V-0 flammability

Product DescriptionThe XCH2N65M is a silicon N-channel Enhanced VDMOSFET manufactured using self-aligned planar technology. This technology enhances performance by reducing conduction loss, improving switching speed, and increasing avalanche energy. It is designed for various power switching circuits, contributing to system miniaturization and higher efficiency. The device comes in a TO-252 package that complies with RoHS standards.Product AttributesPackage: TO-252RoHS

Product OverviewThe YJG55P03B is a P-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Trench Power LV MOSFET technology with a high-density cell design, it offers low RDS(ON) and high-speed switching capabilities. This transistor is suitable for applications such as battery protection, power management, and load switching. It is designed for reliability, meeting Moisture Sensitivity Level 1 and UL 94 V-0

Product Overview The YJD120N04A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power LV MOSFET technology. It offers excellent heat dissipation due to its package design and a high-density cell design for low RDS(ON). This transistor is suitable for applications such as DC-DC Converters, power management functions, and backlighting. Product Attributes Brand: Yangzhou Yangjie Electronic Technology Co., Ltd. Origin: China Certifications: RoHS

Product OverviewThe IRF9640STRLPBF-VB is a high-performance P-channel MOSFET designed for various electronic applications. It features a dynamic dV/dt rating, repetitive avalanche rating, fast switching capabilities, and ease of paralleling, simplifying drive requirements. This MOSFET is suitable for applications requiring robust and efficient power switching.Product AttributesBrand: VBsemiPart Number: IRF9640STRLPBF-VBConfiguration: SinglePackage: TO-263Origin: TaiwanTechnic

Product OverviewThe YJG20N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation through its package design and a high-density cell design for low RDS(ON). This transistor is suitable for applications such as DC-DC converters, power management functions, and backlighting.Product AttributesBrand: Yangzhou Yangjie Electronic Technology Co., Ltd.Origin: ChinaCertifications: RoHS CompliantTech

Product OverviewThe YJS07NP03B is a complementary N-Channel and P-Channel MOSFET featuring Trench Power LV MOSFET technology for high density cell design, resulting in low RDS(ON) and high-speed switching. It is designed for applications requiring efficient power management, including wireless chargers and load switches. The product meets UL 94 V-0 flammability rating and is Halogen Free.Product AttributesBrand: Yangzhou Yangjie Electronic Technology Co., Ltd.Model:

Product OverviewThe X7N50DHE2 is a high-performance N-channel MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. It features low gate charge, low Ciss, and fast switching capabilities, making it ideal for applications such as LED power supplies, cell phone chargers, and standby power systems. This MOSFET offers a 500V drain-source voltage, 7A continuous drain current, and a low on-state resistance of 0.9.Product AttributesBrand: Xiamen XYDFAB Integrated Circuit Co., Ltd

Product OverviewThe YJG88G12A is an N-Channel Enhancement Mode Field Effect Transistor featuring Split gate trench MOSFET technology for low RDS(ON) and excellent heat dissipation. It is designed for power switching applications, hard switched and high frequency circuits, and uninterruptible power supply systems.Product AttributesBrand: Yangzhou Yangjie Electronic Technology Co., Ltd.Model: YJG88G12ATechnology: Split gate trench MOSFETMoisture Sensitivity Level: 1Flammability

HFD4N50-VB Power MOSFETThe HFD4N50-VB is a high-performance N-Channel Power MOSFET designed for simple drive requirements and enhanced ruggedness. It features low gate charge (Qg), improved gate, avalanche, and dynamic dV/dt ruggedness, and fully characterized capacitance, avalanche voltage, and current. This product is compliant with the RoHS directive 2002/95/EC.Product AttributesBrand: VBsemiModel: HFD4N50-VBConfiguration: SingleCertifications: RoHS CompliantPackage: TO

Product OverviewN Channel Advanced Power MOSFET offering low RDS(on) at VGS=5V and 5V logic level control in a SOT23 package. This Pb-free, RoHS compliant device is optimized for power management applications in portable products, including DC fans, chargers, fast switches, H-bridges, inverters, and car chargers.Product AttributesCertifications: Pb-Free, RoHS CompliantPackage: SOT23Marking: A2SHBPacking: 3000PCS/ReelTechnical SpecificationsSymbolParameterConditionMinTypMaxUni

Product OverviewThe YJG15G15A is an N-Channel Enhancement Mode Field Effect Transistor designed with split gate trench MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for switching voltage regulators and DC-DC converters.Product AttributesBrand: Yangzhou Yangjie Electronic Technology Co., Ltd.Model: YJG15G15ATechnology: Split gate trench MOSFETMoisture Sensitivity Level: 1Flammability Rating:

Product OverviewThe XRS180N15H is a N-Channel 150V Fast Switching MOSFET featuring Split Gate Trench MOSFET technology and an excellent package for heat dissipation. Its high-density cell design ensures low RDS(ON), making it suitable for DC-DC converters, power management functions, and synchronous-rectification applications.Product AttributesBrand: power-mos.comTechnical SpecificationsSymbolParameterConditionsMin.Typ.Max.UnitAbsolute Maximum RatingsVDS Drain-Source

Product Overview The CAS350M12BM3 is a 1200 V, 350 A Silicon Carbide (SiC) half-bridge module designed for high-frequency operation with ultra-low losses. It features zero reverse recovery from diodes and zero turn-off tail current from MOSFETs, offering normally-off, fail-safe device operation. The module utilizes a copper baseplate and aluminum nitride insulator for efficient thermal management. Its industry-standard 62mm footprint facilitates system retrofitting and

Product OverviewThe YJS4409B is a P-Channel Enhancement Mode Field Effect Transistor featuring Trench Power LV MOSFET technology. Its high-density cell design ensures low RDS(ON) and high-speed switching capabilities. This transistor is designed for applications requiring efficient power management and load switching, with a focus on battery protection. It is manufactured using environmentally conscious processes and meets stringent flammability ratings.Product AttributesBran

Product OverviewThe XT ELECTRONICS 2N7002 is a high-density cell design N-Channel SMD MOSFET offering ultra-low on-resistance. It functions as a voltage-controlled small signal switch, providing a rugged and reliable solution with high saturation current capability. This MOSFET is ideal for load switching in portable devices and DC/DC converters.Product AttributesBrand: XT ELECTRONICSModel: 2N7002Package Type: SOT-23Marking: 7002Technical SpecificationsParameterSymbolTest

Product Overview The TX40N06B is a 1-Channel 60-V (D-S) MOSFET featuring TrenchFET Power MOSFET technology. It is 100% Rg and UIS tested and compliant with RoHS Directive 2011/65/EU. This MOSFET is designed for applications such as OR-ing, server power supplies, and DC/DC converters. Product Attributes Brand: XDSemi (implied by www.xdssemi.com) Technology: TrenchFET Power MOSFET Certifications: Compliant to RoHS Directive 2011/65/EU Testing: 100 % Rg and UIS Tested Technical