Single FETs, MOSFETs
High Density Cell N Channel MOSFET XDS TX50N06 with Low On Resistance and Effective Heat Dissipation
Product OverviewThe TX50N06 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced technology is optimized to minimize on-state resistance, making these devices particularly suitable for low-voltage applications. Key ...
Power MOSFET VBsemi Elec IRFR5410TRPBF VB P Channel 100 V designed for switching and DC DC converter
IRFR5410TRPBF-VB P-Channel 100 V MOSFET The IRFR5410TRPBF-VB is a P-Channel Trench Power MOSFET designed for power switching applications. It offers high performance with features such as 100% Rg and UIS tested, and compliance with RoHS Directive 2002/95/EC. This MOSFET is suitable for use in DC/DC ...
High current power MOSFET XTX BRP80N120P8 N channel enhancement mode with 80V drain to source voltage
BRP80N120P8 N-channel Enhancement Mode Power MOSFET The BRP80N120P8 is an N-channel enhancement mode power MOSFET from XTX Technology Inc. It offers an 80V drain-to-source voltage and a continuous drain current of 120A. Key features include ultra-low RDS(ON) of less than 5.5m at VGS = 10V, low gate ...
N Channel MOSFET YANGJIE YJG110G10B Designed for Uninterruptible Power Supplies and DC DC Converters
Product OverviewThe YJG110G10B is a N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology with a high-density cell design for low RDS(ON) and excellent heat dissipation. This transistor is suitable for ...
Power Switching Silicon N-channel VDMOSFET XCH XCH2N65M Featuring TO-252 Package and RoHS Compliance
Product DescriptionThe XCH2N65M is a silicon N-channel Enhanced VDMOSFET manufactured using self-aligned planar technology. This technology enhances performance by reducing conduction loss, improving switching speed, and increasing avalanche energy. It is designed for various power switching ...
Low RDS ON P Channel MOSFET YANGJIE YJG55P03B for Load Switching and Battery Protection Applications
Product OverviewThe YJG55P03B is a P-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Trench Power LV MOSFET technology with a high-density cell design, it offers low RDS(ON) and high-speed switching capabilities. This transistor is ...
High Density Cell Design N Channel Enhancement Mode Transistor YANGJIE YJD120N04A for Power Electronics
Product Overview The YJD120N04A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power LV MOSFET technology. It offers excellent heat dissipation due to its package design and a high-density cell design for low RDS(ON). This transistor is suitable for applications such as DC...
VBsemi Elec IRF9640STRLPBF VB P channel MOSFET designed for power switching and fast switching speed
Product OverviewThe IRF9640STRLPBF-VB is a high-performance P-channel MOSFET designed for various electronic applications. It features a dynamic dV/dt rating, repetitive avalanche rating, fast switching capabilities, and ease of paralleling, simplifying drive requirements. This MOSFET is suitable ...
Power MOSFET YANGJIE YJG20N06A N Channel Transistor with Low On Resistance and Trench MV Technology
Product OverviewThe YJG20N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation through its package design and a high-density cell design for low RDS(ON). This transistor is suitable for applications such as DC...
Complementary N Channel P Channel MOSFET YANGJIE YJS07NP03B for wireless charging and load switching
Product OverviewThe YJS07NP03B is a complementary N-Channel and P-Channel MOSFET featuring Trench Power LV MOSFET technology for high density cell design, resulting in low RDS(ON) and high-speed switching. It is designed for applications requiring efficient power management, including wireless ...
N channel MOSFET XYD X7N50DHE2 500V 7A low gate charge fast switching for electronic circuits
Product OverviewThe X7N50DHE2 is a high-performance N-channel MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. It features low gate charge, low Ciss, and fast switching capabilities, making it ideal for applications such as LED power supplies, cell phone chargers, and standby power systems. ...
Split gate trench MOSFET transistor YANGJIE YJG88G12A designed for high current power switching and heat dissipation
Product OverviewThe YJG88G12A is an N-Channel Enhancement Mode Field Effect Transistor featuring Split gate trench MOSFET technology for low RDS(ON) and excellent heat dissipation. It is designed for power switching applications, hard switched and high frequency circuits, and uninterruptible power ...
Low Gate Charge N Channel Power MOSFET VBsemi Elec HFD4N50-VB with RoHS Compliance and TO 252 Package
HFD4N50-VB Power MOSFETThe HFD4N50-VB is a high-performance N-Channel Power MOSFET designed for simple drive requirements and enhanced ruggedness. It features low gate charge (Qg), improved gate, avalanche, and dynamic dV/dt ruggedness, and fully characterized capacitance, avalanche voltage, and ...
Power MOSFET N Channel Device XCH XCH2302 Featuring Low RDS On and 5V Logic Level Control for Switches
Product OverviewN Channel Advanced Power MOSFET offering low RDS(on) at VGS=5V and 5V logic level control in a SOT23 package. This Pb-free, RoHS compliant device is optimized for power management applications in portable products, including DC fans, chargers, fast switches, H-bridges, inverters, and ...
N Channel MOSFET 150V Fast Switching XNRUSEMI XRS180N15H with Excellent Thermal Performance and Low RDS
Product OverviewThe XRS180N15H is a N-Channel 150V Fast Switching MOSFET featuring Split Gate Trench MOSFET technology and an excellent package for heat dissipation. Its high-density cell design ensures low RDS(ON), making it suitable for DC-DC converters, power management functions, and synchronous...
Split Gate Trench MOSFET YANGJIE YJG15G15A N Channel Enhancement Mode Transistor for DC DC Converters
Product OverviewThe YJG15G15A is an N-Channel Enhancement Mode Field Effect Transistor designed with split gate trench MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for switching voltage regulators and DC-DC ...
High Current Silicon Carbide Half Bridge Module Wolfspeed CAS350M12BM3 350 Amp 62 Millimeter Package
Product Overview The CAS350M12BM3 is a 1200 V, 350 A Silicon Carbide (SiC) half-bridge module designed for high-frequency operation with ultra-low losses. It features zero reverse recovery from diodes and zero turn-off tail current from MOSFETs, offering normally-off, fail-safe device operation. The ...
load switching transistor YANGJIE YJS4409B featuring Trench Power LV MOSFET technology and UL 94 V 0 rating
Product OverviewThe YJS4409B is a P-Channel Enhancement Mode Field Effect Transistor featuring Trench Power LV MOSFET technology. Its high-density cell design ensures low RDS(ON) and high-speed switching capabilities. This transistor is designed for applications requiring efficient power management ...
N Channel SMD MOSFET XZT 2N7002 with Ultra Low On Resistance and High Drain Source Breakdown Voltage
Product OverviewThe XT ELECTRONICS 2N7002 is a high-density cell design N-Channel SMD MOSFET offering ultra-low on-resistance. It functions as a voltage-controlled small signal switch, providing a rugged and reliable solution with high saturation current capability. This MOSFET is ideal for load ...
High Reliability MOSFET XDS TX40N06B 60 Volt TrenchFET Device for Server Power and ORing Applications
Product Overview The TX40N06B is a 1-Channel 60-V (D-S) MOSFET featuring TrenchFET Power MOSFET technology. It is 100% Rg and UIS tested and compliant with RoHS Directive 2011/65/EU. This MOSFET is designed for applications such as OR-ing, server power supplies, and DC/DC converters. Product ...
