Single FETs, MOSFETs
N P Channel MOSFET Slkor SLP170C04D Featuring Low Gate Charge and High Cell Density Trench Technology
Product Overview This N+P Channel MOSFET utilizes advanced trench technology and design to provide excellent RDS(on) with low gate charge. It is suitable for a wide variety of applications. Key features include low gate charge, green device availability, advanced high cell density trench technology for ultra-low RDS(ON), and an excellent package for good heat dissipation. Product Attributes Brand: SLKORmicro Model: SLP170C04D Package: SOP-8 Technical Specifications Parameter
Low RDSon P Channel MOSFET Slkor FDN340P Suitable for Video Monitors and Power Management Circuits
Product OverviewThe FDN340P is a P-Channel MOSFET designed with leading trench technology for low RDS(on) and low Gate Charge. It is suitable for applications such as video monitors and power management.Product AttributesBrand: slkormicroModel: FDN340PTechnical SpecificationsParameterConditionMinTypMaxUnitAbsolute Maximum RatingsDrain-Source Breakdown VoltageVGS=0VID=-250A-20----VZero Gate Voltage Drain CurrentVDS=-16VVGS=0V-----1uAGate-Body Leakage CurrentVGS=8VVDS=0V---
power switching Slkor SL1A05A 100V 5A MOSFET with fast switching and soft recovery characteristics
Product OverviewThe SL1A05A is a 100V/5A N-Channel MOSFET designed for high-efficiency power applications. It features low RDS(on) and FOM, extremely low switching loss, and excellent stability and uniformity, making it suitable for fast switching and soft recovery requirements. This MOSFET is ideal for consumer electronic power supplies, motor control, synchronous rectification, and isolated DC/DC converters.Product AttributesBrand: SLKORMicro (implied by URL)Model:
SOT 23 Package Slkor FDN339AN SL MOSFET Designed for PWM Control and High Current Power Applications
Product OverviewThe FDN339AN-SL is an N-Channel MOSFET featuring Trench Power LV MOSFET technology, offering high power and current handling capabilities. It is designed for PWM applications and load switching.Product AttributesBrand: SLKOR MicroModel: FDN339AN-SLPackage: SOT-23Revision: Rev.1Date: 21 June 2017Technical SpecificationsParameterConditionMinTypMaxUnitAbsolute Maximum RatingsVDS20VVGS±10VTJ150CTSTG-50155CISTc=25C3AIDMTc=25C20AIDTc=25C3APDTc=25C0.5WRJAMounted on
N Channel Enhancement Mode Transistor Slkor SL80N03 for in High Frequency and Hard Switched Circuits
Product OverviewThis N-Channel Enhancement Mode Field Effect Transistor is designed for power switching applications, particularly in hard-switched and high-frequency circuits, and uninterruptible power supplies. It features a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, and excellent stability and uniformity with high EAS. The package is optimized for good heat dissipation.Product AttributesBrand: SLKormicroModel:
High Power N Channel MOSFET Slkor SL3416 with Low On Resistance and Surface Mount Package SOT 23 3L
Product OverviewThis N-Channel MOSFET offers high power and current handling capability, making it suitable for load switch and PWM applications. It features a lead-free product acquisition and comes in a surface mount package. The device is designed for efficient power management.Product AttributesBrand: SLKORMicroDevice Code: AGLVPackage: SOT-23-3LCertifications: Lead-free product acquiredTechnical SpecificationsParameterSymbolConditionMinTypMaxUnitDrain-Source Breakdown
1200V SiC MOSFET Slkor SL87N120A Featuring Fast Recovery Diode and Recommended 18V Gate Drive Voltage
Product OverviewThe SL87N120A is a 1200V, 17m SiC MOSFET designed for high-performance applications. It features a recommended 18V gate drive, high voltage capability, low on-resistance, high switching speed with low parasitic capacitance, and high operating junction temperature. The device also includes a fast-recovery body diode and Kelvin connection for efficient drive.Product AttributesBrand: SLKORMicroModel: SL87N120APackage: TO247-4Origin: Not specifiedMaterial: SiC
Battery Protection Using Slkor SL2333A P Channel Enhancement Mode Field Effect Transistor with Low RDS
Product OverviewThe SL2333A is a P-Channel Enhancement Mode Field Effect Transistor featuring Trench Power LV MOSFET technology with a high-density cell design for low RDS(ON). It offers high-speed switching capabilities and is suitable for applications such as battery protection, load switching, and power management.Product AttributesBrand: SLKORMicro (implied by URL)Origin: China (implied by URL)Material: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnic
Low RDS on Slkor BSS138KDW Dual N Channel MOSFET ideal for DC DC converter load switching solutions
Product OverviewThe BSS138KDW is a 50V/0.2A Dual N-Channel MOSFET designed for high-density cell applications, offering low RDS(on) for efficient operation. It functions as a voltage-controlled small signal switch, providing a rugged and reliable solution with high saturation current capability and ESD protection. This MOSFET is ideal for load switching in portable devices and DC/DC converters.Product AttributesBrand: SLKORMicroModel: BSS138KDWPackage: SOT-363Technical
Power Management with Slkor SL4813A P Channel Enhancement Mode Field Effect Transistor and Trench MOSFET
Product OverviewThe SL4813A is a P-Channel Enhancement Mode Field Effect Transistor featuring Trench Power LV MOSFET technology for high density cell design and low RDS(ON). It offers high-speed switching capabilities, making it suitable for battery protection, load switching, and power management applications.Product AttributesBrand: SLKormicroModel: SL4813ATechnology: Trench Power LV MOSFETTechnical SpecificationsParameterSymbolConditionsMinTypMaxUnitDrain-source VoltageVDS
Trench Power LV MOSFET Slkor SL4435A designed for load switching and battery protection in electronic devices
Product OverviewThe SL4435A is a P-Channel MOSFET featuring Trench Power LV MOSFET technology and a high-density cell design for low RDS(ON). It offers high-speed switching capabilities and is suitable for applications such as battery protection, power management, and load switching.Product AttributesBrand: SLKormicroModel: SL4435ATechnical SpecificationsParameterConditionMinTypMaxUnitVDSDrain-Source Breakdown Voltage-30----VIDSSZero Gate Voltage Drain Current-----1uAIGSSGate
High Speed Switching Power MOSFET Slkor SL607B N Channel and P Channel for Wireless Charging Systems
Product OverviewThis N-Channel and P-Channel complementary Power MOSFET series features Trench Power LV MOSFET technology with a high-density cell design for low RDS(ON). It offers high-speed switching and is suitable for applications such as wireless chargers, load switches, and power management.Product AttributesBrand: SLKORMICROPackage: TO-252-4LTechnical SpecificationsParameterSymbolN-Channel (Typical)P-Channel (Typical)UnitProduct SummaryVDSVDS30V-30VVIDID12A-8AARDS(ON)
Trench Power MV MOSFET Slkor BSN20 Featuring Low Input Output Leakage and High Switching Speed for Electronics
Product OverviewThe BSN20 is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It functions as a voltage-controlled small signal switch with low input capacitance and fast switching speed, offering low input/output leakage. This device is ideal for battery-operated systems, solid-state relays, and direct logic-level interface applications with TTL/CMOS.Product AttributesBrand: slkormicro (implied from URL)Model: BSN20Technical
N Channel 20 Volt Mosfet Slkor SL2192 Semiconductor Component for Electronic Applications
Product OverviewSL2192 is an N-Channel 20-V (D-S) MOSFET.Product AttributesBrand: SLKORMicroTechnical SpecificationsModelChannel TypeDrain-Source Voltage (VDS)SL2192N-Channel20 V2409280232_Slkor-SL2192_C2999991.pdf
N Channel Power MOSFET Slkor BSS123 with 100V Drain Source Voltage and 150mA Continuous Drain Current
Product OverviewThe BSS123 is an N-Channel Power MOSFET designed for various electronic applications. It offers robust performance with a maximum drain-source voltage of 100V and continuous drain current of 150mA.Product AttributesBrand: slkormicroModel: BSS123Package Type: SOT-23Technical SpecificationsCharacteristicSymbolMinTypMaxUnitNotesMAXIMUM RATINGSDrain-Source VoltageBVDSS100VGate-Source VoltageVGS+20VDrain Current-continuousIDR150mADrain Current-pulsedIDRM600mATHERMA
Power MOSFET Slkor SL2309A P Channel 60 Volt for Load Switching in Portable and DC DC Devices
Product OverviewThe P-Channel 60-V (D-S) MOSFET, specifically the SL2309A, is designed for load switching in portable devices and DC/DC converters. It features TrenchFET Power MOSFET technology for enhanced performance. This MOSFET offers a continuous drain current of -2.0A and a drain-source breakdown voltage of -60V.Product AttributesBrand: SLKORMicroModel: SL2309ATechnical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitDrain-source breakdown voltageV(BR)DSSVGS =
Surface mount N Channel MOSFET Slkor SL9945 designed for power control in compact electronic devices
Product Overview These miniature surface mount MOSFETs utilize a high cell density trench process for low rDS(on), minimizing power loss and heat dissipation. They are ideal for DC-DC converters and power management in portable and battery-powered products, including computers, printers, PCMCIA cards, and cellular/cordless telephones. Key advantages include higher efficiency, extended battery life, low thermal impedance, fast switching speed, and high-performance trench
Power Switching N Channel MOSFET Featuring Slkor SL4406 with 15A Continuous Drain Current and Low RDS
Product OverviewThis N-Channel MOSFET offers a 30V drain-source voltage and a continuous drain current of 15A at VGS=10V. It features low on-state resistance, with RDS(ON) < 7.5m at VGS=10V and < 11.0m at VGS=4.5V. Packaged in a SOP-8, it is suitable for various power switching applications.Product AttributesBrand: SLKORMicro (implied by URL)Model: SL4406Technical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitDrain-Source Breakdown VoltageVDSSID=250 uA, VGS
N Channel Enhancement Mode MOSFET Slkor BSS138 with 50V Drain Source Voltage and 220mA Continuous Current
Product OverviewThe BSS138 is an N-Channel Enhancement-Mode MOS FET designed for various electronic applications. It offers a maximum drain-source voltage of 50V and a continuous drain current of 220mA, with a pulsed drain current of up to 880mA. This device is suitable for applications requiring efficient switching and amplification.Product AttributesBrand: slkormicro.comModel: BSS138Technical SpecificationsCharacteristicSymbolMinTypMaxUnitNotesDrain-Source Breakdown
power switching Slkor SL40P05Y P channel mosfet with ultra low RDSON and avalanche current capability
Product OverviewThe SL40P05Y is a -40V P-Channel MOSFET featuring a high-density cell design for ultra low RDS(ON). It offers fully characterized avalanche voltage and current, with an excellent package for good heat dissipation. This MOSFET is suitable for power switching applications, hard switched and high frequency circuits, and DC-DC converters.Product AttributesBrand: SLKormicroModel: SL40P05YPackage Type: SOT-23Technical SpecificationsParameterSymbolConditionMinTypMaxU
