Single Bipolar Transistors

quality NPN PNP Double Transistor in SOT363 Package Nexperia PUMD2 125 with 50 Volt Collector Emitter Rating factory

NPN PNP Double Transistor in SOT363 Package Nexperia PUMD2 125 with 50 Volt Collector Emitter Rating

Product Overview The Nexperia PUMD2 is a resistor-equipped double transistor (RET) featuring both NPN and PNP configurations within a single, compact SOT363 (SC-88) SMD plastic package. Designed for low current peripheral driving and controlling IC inputs, this device simplifies circuit design by integrating built-in bias resistors, thereby reducing component count and pick-and-place costs. It offers a 100 mA output current capability and a 50 V collector-emitter voltage

quality High voltage power transistor Minos MJL21194 NPN triple diffused for 100 watt audio amplifier output stages factory

High voltage power transistor Minos MJL21194 NPN triple diffused for 100 watt audio amplifier output stages

Product Overview The MJL21194 is a Minos Silicon NPN triple diffused power transistor designed for power amplifier applications. It is complementary to the MJL21193 and features a high collector voltage of 250V (min), making it recommended for 100-W high-fidelity audio frequency amplifier output stages. Note: Continuous operation under heavy loads may significantly decrease product reliability even if operating conditions are within absolute maximum ratings. Product

quality High frequency low Vce sat transistor MDD Microdiode Semiconductor A1300 10V 2A PNP for strobo flash factory

High frequency low Vce sat transistor MDD Microdiode Semiconductor A1300 10V 2A PNP for strobo flash

Product OverviewThe A1300 is a 10V 2A PNP High-Frequency Low Vce(sat) Transistor designed for strobo flash and medium power amplifier applications. It offers high DC current gain, excellent frequency performance, and low saturation voltage.Product AttributesBrand: Microdiode Electronics (Shenzhen)Package: SOT-23-3LTechnical SpecificationsParameterSymbolConditionMinTypMaxUnitCollector-Base VoltageVCBO-20VCollector-Emitter VoltageVCEO-10VEmitter-Base VoltageEBO-6VCollector

quality PNP Transistor MCC BCX53-16-TP Plastic Encapsulated with UL 94 V0 Flammability Rating and Collector Current 1 Amp factory

PNP Transistor MCC BCX53-16-TP Plastic Encapsulated with UL 94 V0 Flammability Rating and Collector Current 1 Amp

Product OverviewThe BCX53, BCX53-10, and BCX53-16 are PNP plastic encapsulated transistors designed for general-purpose applications. They offer reliable performance with key features such as a collector current of -1.0 A and a collector power dissipation of 500 mW. These transistors are Halogen Free available upon request, Moisture Sensitivity Level 1, and meet UL 94 V-0 flammability rating. They are lead-free and RoHS compliant.Product AttributesBrand: MCCSEMIMaterial:

quality Nexperia BCP56-16TX 80 Volt NPN Medium Power Transistor 1 Amp Collector Current SOT223 Surface Mount factory

Nexperia BCP56-16TX 80 Volt NPN Medium Power Transistor 1 Amp Collector Current SOT223 Surface Mount

Nexperia BCP56T Series: 80 V, 1 A NPN Medium Power Transistors Product Overview The Nexperia BCP56T series comprises NPN medium power transistors housed in a SOT223 (SC-73) surface-mounted device (SMD) plastic package. These transistors offer high collector current capability, multiple current gain selections, and robust power dissipation capabilities, making them suitable for applications such as linear voltage regulators, MOSFET drivers, high-side switches, power management

quality Silicon Bipolar Epitaxial Planar Power Amplifier Transistor Minos MJE15032G with 8A Collector Current and 250V Voltage factory

Silicon Bipolar Epitaxial Planar Power Amplifier Transistor Minos MJE15032G with 8A Collector Current and 250V Voltage

Product Overview This is a Silicon Bipolar Epitaxial Planar NPN-PNP Matched Power Amplifier Transistor designed for high-fidelity audio power amplifier pre-stage driving. It offers a large output current of 8A, a high breakdown voltage of VCEO 250V, and a wide operating area. The transistor also boasts superior frequency characteristics with fT > 30MHz. It is suitable for continuous load operation under demanding conditions such as high temperature, high voltage, and large

quality NPN NPN Double Resistor Equipped Transistor with 4.7 k Bias Resistor Nexperia PUMH13F SOT363 Package factory

NPN NPN Double Resistor Equipped Transistor with 4.7 k Bias Resistor Nexperia PUMH13F SOT363 Package

Product Overview The Nexperia PEMH13 and PUMH13 are NPN/NPN double Resistor-Equipped Transistors (RET) designed for surface-mounted devices (SMD). These components feature built-in bias resistors (R1 = 4.7 k, R2 = 47 k), reducing component count, pick and place costs, and simplifying circuit design. They offer a 100 mA output current capability and are AEC-Q101 qualified, making them suitable for low current peripheral driving, control of IC inputs, and as replacements for

quality Nexperia PUMD3 115 Resistor Equipped Double Transistor NPN PNP in SOT363 Package for Circuit Design factory

Nexperia PUMD3 115 Resistor Equipped Double Transistor NPN PNP in SOT363 Package for Circuit Design

Product Overview The Nexperia PUMD3 is a resistor-equipped double transistor (RET) featuring both NPN and PNP configurations within a compact SOT363 (SC-88) SMD plastic package. This device offers a 100 mA output current capability and incorporates built-in bias resistors, simplifying circuit design, reducing component count, and lowering pick-and-place costs. It is ideal for digital applications in automotive and industrial segments, serving as a cost-saving alternative for

quality MCC MMBT2222AT TP NPN General Purpose Transistor with 150mW Power Dissipation and Epoxy Construction factory

MCC MMBT2222AT TP NPN General Purpose Transistor with 150mW Power Dissipation and Epoxy Construction

Product OverviewThe MMBT2222AT is an NPN General Purpose Amplifier with capabilities for 150mWatts of Power Dissipation. It operates within a junction temperature range of -55C to 150C and can handle a collector current of 0.6A.Product AttributesBrand: MCC (Micro Commercial Components)Certifications: RoHS Compliant (indicated by "P" suffix), UL 94 V-0 flammability ratingMaterial: EpoxyOrigin: USA (implied by address)Halogen Free: Available upon request (by adding "-HF" suffix

quality MDD Microdiode Semiconductor SF1008ED Rectifiers Certified For Soldering Per MIL STD 750 Method 2026 factory

MDD Microdiode Semiconductor SF1008ED Rectifiers Certified For Soldering Per MIL STD 750 Method 2026

Product OverviewSuper Fast Glass Passivated Rectifiers offering high current capability, low forward voltage drop, and low power loss for high efficiency. These rectifiers feature high surge capability and are guaranteed for high temperature soldering. They are suitable for mounting in any position.Product AttributesBrand: Microdiode (implied by URL)Model Series: SF1008ET(D)Package Types: TO-251 (I-PAK), TO-252 (D-PAK)Material: Molded plastic body with plated axial leadsPolar

quality Nexperia BC847BW115 transistor offering 200 minimum gain and 45 volt VCEO in compact SOT323 SC70 package factory

Nexperia BC847BW115 transistor offering 200 minimum gain and 45 volt VCEO in compact SOT323 SC70 package

Product Overview The Nexperia BC847xW series comprises NPN general-purpose transistors designed for a wide range of switching and amplification applications. These transistors are housed in a very small SOT323 (SC-70) surface-mounted device (SMD) plastic package, offering three distinct gain selections for versatile use. With a collector-emitter voltage of 45 V and a collector current of 100 mA, they provide reliable performance in compact electronic designs. Product

quality Compact SOT363 transistor pair Nexperia BC846BS 115 with low collector capacitance and matched gain factory

Compact SOT363 transistor pair Nexperia BC846BS 115 with low collector capacitance and matched gain

Product Overview The Nexperia BC846BS is a general-purpose NPN/NPN transistor pair housed in a compact SOT363 (SC-88) SMD plastic package. Designed for efficiency and space-saving, it offers low collector capacitance, low collector-emitter saturation voltage, and closely matched current gain. This configuration minimizes component count and board space while preventing mutual interference between transistors, making it ideal for general-purpose switching and amplification

quality Epitaxial planar die small signal transistor MCC BCW68G-TP with lead free and RoHS compliant features factory

Epitaxial planar die small signal transistor MCC BCW68G-TP with lead free and RoHS compliant features

Product OverviewThe BCW68G is a PNP epitaxial planar die construction small signal transistor ideally suited for automatic insertion. It offers low current and low voltage capabilities, making it suitable for various electronic applications. This device is halogen-free, "Green", moisture sensitivity level 1, and meets UL 94 V-0 flammability rating. It is lead-free and RoHS compliant.Product AttributesBrand: MCCSEMIConstruction: Epitaxial Planar DieCertifications: UL 94 V-0

quality PNP Silicon Transistor Minos B772 Suitable for Industrial Electronic Circuits and Audio Amplification factory

PNP Silicon Transistor Minos B772 Suitable for Industrial Electronic Circuits and Audio Amplification

Product Overview This PNP Silicon Transistor is designed for audio amplification and switching power amplification applications. It offers reliable performance with defined electrical characteristics and is suitable for various industrial and electronic circuits requiring amplification or switching functions. Product Attributes Brand: MNS-KX Type: PNP Silicon Transistor Package: TO-252 Technical Specifications Parameter Symbol Description Min Typ Max Unit Test Conditions

quality High Collector Current PNP Silicon Transistor Minos TIP105 Darlington Type with Damping Diode Included factory

High Collector Current PNP Silicon Transistor Minos TIP105 Darlington Type with Damping Diode Included

Product Overview This is a PNP Silicon Transistor, specifically a Darlington transistor with an integrated damping diode. It is designed for high-gain circuits and offers a high collector current capability. Key specifications include a collector-emitter voltage of -100V, a continuous collector current of -5A, and a high DC current gain (HFE) of 1000. This device is suitable for applications requiring significant signal amplification. Product Attributes Brand: MNS-KX Type:

quality Halogen Free Plastic Transistor MCC CXT5551-TP RoHS Compliant with UL94V-0 Flammability Certification factory

Halogen Free Plastic Transistor MCC CXT5551-TP RoHS Compliant with UL94V-0 Flammability Certification

Product OverviewThe CX7 is a plastic encapsulated transistor designed for general-purpose applications. It is a halogen-free, "Green" device meeting UL94V-0 flammability rating and RoHS compliance. This device offers lead-free finishing and is suitable for various electronic circuits.Product AttributesBrand: Micro Commercial Components (MCC)Material: Plastic EncapsulationColor: Green (Halogen-Free)Certifications: RoHS Compliant, UL94V-0 Flammability RatingTechnical Specificat

quality NPN Small Signal Transistor MCC BC817-40HE3-TP 300mW Power Dissipation SOT-23 Package AEC-Q101 Qualified factory

NPN Small Signal Transistor MCC BC817-40HE3-TP 300mW Power Dissipation SOT-23 Package AEC-Q101 Qualified

NPN Small Signal Transistor 300mW This NPN small signal transistor, available in the BC817-16HE3 through BC817-40HE3 series, is designed for general-purpose applications. It features a 300mW power dissipation and is housed in a SOT-23 package. The device is AEC-Q101 qualified, Halogen Free, and RoHS compliant, making it suitable for various electronic designs requiring reliable performance and environmental consideration. Product Attributes Brand: MCCSEMI.COM Type: NPN Small

quality PNP Silicon Transistor Minos TIP42C for Audio Power Amplification and Signal Amplification factory

PNP Silicon Transistor Minos TIP42C for Audio Power Amplification and Signal Amplification

Product Overview The TIP42C is a PNP Silicon Transistor designed for audio power amplification. It is manufactured by Shenzhen Minos Technology Co.,Ltd. Product Attributes Brand: TIP42C Type: PNP Silicon Transistor Application: Audio Power Amplification Manufacturer: Shenzhen Minos Technology Co.,Ltd Website: www.mns-kx.com Technical Specifications Parameter Symbol Description Test Conditions Minimum Typical Maximum Unit Collector-Emitter Cutoff Current ICEO VCE=-60V, IB=0

quality NPN Transistor SOT-23 Package Featuring MDD Microdiode Semiconductor 2SC1815 for Electronic Circuits factory

NPN Transistor SOT-23 Package Featuring MDD Microdiode Semiconductor 2SC1815 for Electronic Circuits

The 2SC1815 is an NPN plastic-encapsulated transistor designed for general-purpose applications. It features a SOT-23 package and is suitable for various electronic circuits. Product Attributes Brand: microdiode Package Type: SOT-23 Technical Specifications Parameter Symbol Test Conditions Value Unit Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 50 V Emitter to Base Voltage VEBO 5 V Collector Current IC 150 mA Power Dissipation PC 200 mW Junction

quality Electronic switching transistor MDD Microdiode Semiconductor S9014 NPN type in compact SOT23 package factory

Electronic switching transistor MDD Microdiode Semiconductor S9014 NPN type in compact SOT23 package

Product OverviewThe S9014 is a general-purpose NPN transistor in a SOT-23 plastic package. It is complementary to the S9015 and is suitable for various electronic applications requiring amplification or switching.Product AttributesBrand: MicrodiodePackage Type: SOT-23Marking: J6Technical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitMAXIMUM RATINGSCollector-Base VoltageVCBO50VCollector-Emitter VoltageVCEO45VEmitter-Base VoltageVEBO5VCollector Current-ContinuousIC10

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