Single Bipolar Transistors

Product Overview The DTA123JE/DTA123JUA/DTA123JKA/DTA123JCA series are PNP digital transistors featuring built-in bias resistors. These integrated resistors simplify circuit configuration by eliminating the need for external input resistors, enabling inverter circuits. The thin-film resistors offer complete isolation for positive input biasing and minimize parasitic effects. Operation is simplified to setting on/off conditions, facilitating device design. These transistors

Product Overview The MMBT5551 is an NPN transistor designed for medium power amplification and switching applications. It serves as a complementary component to the MMBT5401 transistor. Product Attributes Marking: G1 Package: SOT-23 (Plastic surface mounted package; 3 leads) Technical Specifications Parameter Symbol Test conditions MIN TYP MAX Units MAXIMUM RATINGS (TA=25 unless otherwise noted) Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter

Product Overview This digital transistor (PNP) features built-in bias resistors, simplifying inverter circuit configuration by eliminating the need for external input resistors. The integrated thin-film resistors offer complete isolation for negative input biasing and minimize parasitic effects. Operation is streamlined, requiring only the setting of on/off conditions for ease of device design. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd.

Product Overview This series of NPN Silicon Epitaxial Planar Transistors are designed for switching, interface circuit, and drive circuit applications. They feature built-in bias resistors, which simplify circuit design and reduce the quantity of parts and manufacturing processes required. Available in a SOT-23 plastic package, these transistors offer a range of resistor values for flexible application integration. Product Attributes Brand: Heyuan China Base Electronics

Product Overview This product is a PNP Silicon Epitaxial Transistor designed for switching and amplifier applications. It is housed in a SOT-23 plastic package. The transistors offer various performance levels across different models, suitable for a range of electronic circuits requiring precise control and amplification. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Package Type: SOT-23 Plastic Package Technical Specifications Parameter Symbol

Product Overview The BC856...BC860 series are PNP silicon epitaxial transistors designed for switching and amplifier applications. These transistors are housed in a compact SOT-23 plastic package, making them suitable for various electronic circuits where space efficiency is crucial. Product Attributes Package Type: SOT-23 Plastic Package Transistor Type: PNP Silicon Epitaxial Applications: Switching and Amplifier Technical Specifications Parameter Symbol BC856 BC857, BC860

Product Overview This document details PNP Silicon Epitaxial Transistors designed for switching and amplifier applications. These transistors are housed in a SOT-23 plastic package. They offer a range of models with varying voltage and current gain characteristics, suitable for diverse electronic circuit designs. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Package Type: SOT-23 Plastic Package Material: Silicon Epitaxial Transistor Technical

Product Overview This NPN Silicon Planar High Voltage Transistor is designed for demanding applications requiring high voltage capabilities. It features a Collector-Emitter Voltage (VCEO) of 400V and a continuous collector current (IC) of up to 225mA. With its robust design and specified operating temperature range, this transistor is suitable for various industrial and electronic circuits where reliable high-voltage switching and amplification are essential. Product

Product Overview This PNP transistor is designed for switching applications. It offers reliable performance with key electrical characteristics such as breakdown voltages and DC current gain. The device is housed in a compact SOT-23 package, making it suitable for surface mounting in various electronic circuits. Product Attributes Marking: 2T Origin: Heyuan China Base Electronics Technology Co., Ltd. Package Type: SOT-23 (Plastic surface mounted package; 3 leads) Technical

Product Overview The MMDTC143ZE is an NPN Silicon Epitaxial Planar Digital Transistor designed to simplify circuit design and reduce part count and manufacturing processes through its built-in bias resistors. It features integrated resistors for input (R2) and collector (R1), with the emitter being common. This configuration is ideal for applications requiring simplified digital transistor circuitry. Product Attributes Brand: Not specified Origin: Not specified Material:

Product Overview The SOT-323 Plastic-Encapsulated Transistor is an epitaxial planar die transistor ideally suited for automatic insertion. It offers complementary functionality to the BC817W. Key electrical characteristics include a collector-emitter breakdown voltage of -45V and a DC current gain (hFE) ranging from 100 to 600 depending on the specific rank. This transistor is designed for various electronic applications requiring reliable PNP transistor performance. Product

Product Overview This PNP Silicon Epitaxial Planar Transistor is designed for switching and AF amplifier applications. It is available in different groups based on its DC current gain, offering versatility for various electronic designs. The transistor is suitable for general-purpose amplification and switching tasks. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Technical Specifications Parameter Symbol Value Unit Conditions Absolute Maximum

Product Overview The MMBT3904T is an NPN transistor in a SOT-523 plastic-encapsulated package. It serves as a complementary component to the MMBT3906T and is designed for applications requiring small package size. This transistor offers various electrical characteristics including breakdown voltages, cut-off currents, DC current gain (hFE) across different collector currents, saturation voltages, and transition frequency, making it suitable for general-purpose electronic

Product Overview The Plastic-Encapsulate Transistor (PNP) is designed for switching and amplification in high-voltage applications, particularly within telephony systems. It offers low current capabilities with a maximum of 500mA and high voltage handling up to 160V. Key features include its suitability for high-voltage scenarios and its low current characteristics. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Package Type: SOT-89 Technical

Product Overview This NPN Silicon Epitaxial Transistor is designed for switching and amplifier applications. Complementary PNP transistors like the BC856...BC860 are recommended for specific applications. The transistor is housed in a SOT-23 Plastic Package. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Type: NPN Silicon Epitaxial Transistor Package: SOT-23 Plastic Package Technical Specifications Parameter Symbol Model Value Units Collector

Product Overview This NPN Silicon Epitaxial Planar Transistor is designed for various electronic applications. It offers a Collector-Emitter Voltage (VCEO) of up to 60V and a Continuous Collector Current (IC) of 1A, with a Peak Pulse Current (ICM) of 2A. The device features a high Static Forward Current Transfer Ratio (hFE) and is suitable for operation within a wide temperature range of -55 to +150. It also exhibits robust ESD protection, withstanding up to 4,000V on the

Product Overview The DTA143E series digital transistors feature built-in bias resistors, enabling the configuration of inverter circuits without external input resistors. These thin-film resistors offer complete isolation for positive input biasing and minimize parasitic effects, simplifying device design by requiring only on/off condition settings for operation. They are suitable for applications where digital logic is integrated with analog signals. Product Attributes Brand

Product Overview The SS8050W is an NPN transistor designed as a complementary part to the SS8550W. It is suitable for various electronic applications requiring reliable transistor performance. Product Attributes MARKING: Y1 Complimentary to SS8550W Technical Specifications Parameter Symbol Test Conditions MIN TYP MAX Units MAXIMUM RATINGS (TA=25 unless otherwise noted) Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V Collector

Product Overview This NPN plastic-encapsulated transistor offers high voltage capability with a VCEO of 160V and a large continuous collector current capacity. It is designed for applications requiring robust performance in terms of voltage and current handling. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Product Type: Plastic-Encapsulate Transistors (NPN) Marking: 2383 Technical Specifications Symbol Parameter Test Conditions Value Unit

Dual Transistor (NPN + PNP) - SOT-363 Package This complementary pair of transistors, housed in a SOT-363 plastic-encapsulated package, features one 3904-type NPN transistor and one 3906-type PNP transistor. Constructed with epitaxial planar die technology, these transistors are ideally suited for low-power amplification and switching applications. The device is identified by the making code K46. Product Attributes Package Type: SOT-363 Construction: Epitaxial Planar Die