Single Bipolar Transistors
High reliability PNP transistor CBI S8550 with 0.5A collector current and 0.2W power dissipation
Product Overview The S8550T is a PNP bipolar junction transistor designed as a complementary part to the S8050T. It features a continuous collector current of 0.5A and a collector power dissipation of 0.2W. This transistor is suitable for applications requiring a continuous collector current of up to 0.5A and is marked with '2TY'. Product Attributes Type: PNP Transistor Marking: 2TY Complementary to: S8050T Package: SOT-523 Technical Specifications Symbol Parameter Test
Stable 5 volt output voltage regulator CBI 78L05 suitable for surface mount electronic applications
Product Overview This product is a voltage regulator designed for stable output voltage. It operates within a specified input voltage range and offers precise regulation under various load and line conditions. Its compact SOT-23 package makes it suitable for surface-mounted applications. Product Attributes Origin: Heyuan China Base Electronics Technology Co., Ltd. Technical Specifications Parameter Symbol Value Unit Test Conditions Min Typ Max ABSOLUTE MAXIMUM RATINGS Input
Medium power NPN transistor CBI BCX53 suitable for driver stages in audio amplifiers and general purpose
Product Overview The BCX51, BCX52, and BCX53 series are NPN plastic-encapsulated transistors designed for low voltage and high current applications. They serve as medium power general-purpose devices and are suitable for driver stages in audio amplifiers. These transistors are NPN complements to the BCX54, BCX55, and BCX56 series. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Package Type: SOT-89 Technical Specifications Model VCBO (V) VCEO (V)
Digital Transistor CBI DTC144EUA with Complete Isolation and Built-in Bias Resistors SOT-323 Package
Product Overview Digital Transistors with built-in bias resistors simplify circuit design by eliminating the need for external input resistors, enabling inverter circuit configurations. These transistors feature thin-film resistors with complete isolation for negative biasing and minimal parasitic effects, making them ideal for applications where only on/off conditions need to be set. Available in various package types including SOT-523, SOT-323, SOT-23-3L, and SOT-23.
General purpose NPN transistor CBI SS8050 with SOT23 package and 1.5 amp collector current rating
Product Overview The SS8050 is an NPN transistor designed for general-purpose applications. It is complementary to the SS8550 transistor. This device is housed in a SOT-23 plastic surface-mounted package with 3 leads. Product Attributes Marking: Y1 Technical Specifications Parameter Symbol Test Conditions MIN TYP MAX Units MAXIMUM RATINGS (TA=25 unless otherwise noted) Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V Collector
Compact Dual PNP Transistor CBI MMDT5401DW for Medium Power Amplification and Switching Applications
Product Overview This dual PNP transistor, complementary to the MMDT5551DW, is designed for medium power amplification and switching applications. It features a small surface mount package, making it ideal for space-constrained designs. The device offers robust performance with high breakdown voltages and controlled current gain. Product Attributes Type: Dual Transistor (PNP+PNP) Package: SOT-363 Plastic-Encapsulate Transistors Complementary to: MMDT5551DW Origin: Heyuan
Low Frequency NPN Silicon Epitaxial Planar Transistor CBI 2SC4672U DKR Featuring SOT89 Package Design
Product Overview This NPN Silicon Epitaxial Planar Transistor is designed for low-frequency applications. It features a SOT-89 package and is classified into hFE ranks P, Q, and R, with corresponding marking codes DKP, DKQ, and DKR. The transistor offers robust performance with specified absolute maximum ratings and electrical characteristics at 25C. Product Attributes Type: NPN Silicon Epitaxial Planar Transistor Package: SOT-89 Origin: Heyuan China Base Electronics
Electronic switching transistor CBI BC857AW NPN silicon epitaxial planar for general purpose circuits
Product Overview This NPN Silicon Epitaxial Planar Transistor is designed for general purpose and switching applications. It offers various models with distinct voltage and current ratings, suitable for a wide range of electronic circuits. The transistors are manufactured by Heyuan China Base Electronics Technology Co., Ltd. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Type: NPN Silicon Epitaxial Planar Transistor Technical Specifications
PNP transistor CBI MMBT3906 featuring epitaxial planar die construction and SOT23 three lead package
Product Overview The MMBT3906 is a PNP Epitaxial Planar Die Construction transistor. It is the complementary type to the NPN transistor MMBT3904. Designed for general-purpose applications, this transistor is supplied in a SOT-23 plastic surface-mounted package with 3 leads. Product Attributes Type: PNP Transistor Construction: Epitaxial Planar Die Package: SOT-23 (Plastic surface mounted package; 3 leads) Complementary Type: MMBT3904 (NPN) Technical Specifications Symbol
NPN and PNP Transistor Pair CBI MMDT4413DW Plastic Encapsulated 4401 4403 for Switching Applications
Product Overview This product features a complementary pair of plastic-encapsulated transistors, including one 4401-type NPN and one 4403-type PNP transistor. Designed with epitaxial planar die construction, these transistors are ideal for low-power amplification and switching applications. They are manufactured by Heyuan China Base Electronics Technology Co., Ltd. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Package Type: SOT-363 Construction:
High Voltage NPN Silicon Planar Transistor CBI FMMT458 Featuring 400V VCEO and 225mA Collector Current
Product Overview This NPN Silicon Planar High Voltage Transistor is designed for high voltage applications. It offers robust performance with a 400V VCEO rating and a continuous collector current of 225 mA. The transistor is suitable for various electronic circuits requiring reliable high-voltage switching and amplification. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Type: NPN Silicon Planar High Voltage Transistor Technical Specifications
PNP transistor small surface mount package medium power amplification switching CBI MMBT5401W device
Product Overview This PNP plastic-encapsulated transistor is designed as a complementary component to the MMBT5551W. Featuring a small surface mount package, it is ideal for medium power amplification and switching applications. The transistor is marked with 'K4M'. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Package Type: SOT323 Transistor Type: PNP Technical Specifications Parameter Symbol Test Conditions Min Typ Max Unit MAXIMUM RATINGS (Ta
General purpose low frequency power amplifier transistor CBI 2SD669U plastic encapsulated package type
Product Overview This is a low-frequency power amplifier, offered as a complementary pair with the 2SB649. It is designed for general-purpose amplification applications. The transistor is housed in a plastic-encapsulated package. Product Attributes Complementary Pair with 2SB649 Marking: D669 Package Type: Plastic-Encapsulated Transistor Origin: Heyuan China Base Electronics Technology Co., Ltd. Technical Specifications Parameter Symbol Test Conditions Min Typ Max Unit
SOT23 Plastic Package PNP Transistor CBI BC857B Ideal for Switching and Amplifier Electronic Designs
Product Overview The BC856BC860 series are PNP silicon epitaxial transistors designed for switching and amplifier applications. These transistors are housed in a SOT-23 plastic package, offering a compact solution for various electronic designs. Product Attributes Package Type: SOT-23 Plastic Package Technical Specifications Parameter Symbol BC856 BC857, BC860 BC858, BC859 Unit Absolute Maximum Ratings (Ta = 25 ℃) Collector Base Voltage -VCBO 80 50 30 V Collector Emitter
Electronic switching transistor CBI MMBT2222A NPN epitaxial planar die type in compact SOT23 package
Product Overview The MMBT2222A is an NPN epitaxial planar die construction transistor. It features a complementary PNP type available (MMBT2907A). This transistor is housed in a SOT-23 package, a plastic surface-mounted package with 3 leads. It is suitable for various electronic applications requiring reliable switching and amplification. Product Attributes Type: NPN Transistor Construction: Epitaxial planar die Complementary Type: MMBT2907A (PNP) Package: SOT-23 (Plastic
Dual Bias Resistor Transistor MMUN5211DW NPN Silicon Surface Mount Device for Space Saving Circuits
Product Overview The MMUN5211DW Series Dual Bias Resistor Transistors (BRT) are NPN silicon surface mount transistors featuring a monolithic bias resistor network. Each BRT integrates a single transistor with a series base resistor and a base-emitter resistor, effectively replacing external bias components. This series is designed for low-power surface mount applications where board space is limited, offering advantages such as simplified circuit design, reduced board space,
NPN Transistor CBI S9013 with SOT23 Package Offering Performance and Excellent hFE Linearity
Product Overview The S9013 is an NPN transistor designed for general-purpose applications. It is complementary to the S9012 transistor and offers excellent hFE linearity. This transistor is housed in a plastic surface-mounted SOT-23 package with 3 leads. Product Attributes Complementary to S9012 Excellent hFE linearity MARKING: J3 Package: SOT-23 (Plastic surface mounted package; 3 leads) Technical Specifications Symbol Parameter Test Conditions MIN TYP MAX Units MAXIMUM
Electronic NPN Transistor with 05A Collector Current and 25V Collector Emitter Voltage CBI S8050W SOT323 Package
Product Overview This NPN transistor is a complementary component to the S8550, designed for applications requiring a collector current of up to 0.5A. It offers a collector-emitter voltage of 25V and a collector dissipation of 0.3W. The transistor is marked with 'J3Y' and is housed in an SOT-323 package. It is suitable for various electronic circuits where reliable NPN amplification or switching is needed. Product Attributes Marking: J3Y Complimentary to: S8550 Origin: Heyuan
Digital transistor CBI DTC143XUA with built-in resistors enabling easy inverter circuit configuration
Product Overview The DTC124EE is a digital transistor (NPN) featuring built-in bias resistors. This design simplifies inverter circuit configuration by eliminating the need for external input resistors. The integrated thin-film resistors offer complete isolation, enabling negative input biasing and minimizing parasitic effects. Operation is streamlined, requiring only the setting of on/off conditions for ease of device design. Product Attributes Brand: Heyuan China Base
Plastic Encapsulated Transistor CBI 2SC4177 Suitable for High Voltage Applications and Amplification
Product Overview This NPN transistor is designed for general-purpose amplification and offers high DC current gain. It is complementary to the 2SA1611 and is suitable for high voltage applications. Key features include high voltage ratings and a wide DC current gain range, with specific hFE ranks available for tailored performance. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Product Type: Plastic-Encapsulated Transistors Complementary to:
