Single Bipolar Transistors
Digital transistor CBI DTC124EUA featuring built in bias resistors and thin film resistor technology
Product Overview The DTC124EE is a digital transistor (NPN) designed for simplified circuit configuration. It features built-in bias resistors, eliminating the need for external input resistors and enabling inverter circuit designs. These integrated thin-film resistors offer complete isolation, support negative input biasing, and minimize parasitic effects. Operation is simplified to setting on/off conditions, making device design straightforward. Product Attributes Brand:
Digital Transistor NPN Silicon Epitaxial Planar Model CBI DTC114YE Featuring Built-in Bias Resistors
Product Overview This NPN Silicon Epitaxial Planar Digital Transistor is designed with built-in bias resistors, simplifying circuit design and reducing the quantity of parts and manufacturing processes required. It is suitable for various electronic applications where integrated bias resistance is beneficial. Product Attributes Type: NPN Silicon Epitaxial Planar Digital Transistor Origin: Heyuan China Base Electronics Technology Co., Ltd. Technical Specifications Parameter
Electronic Component CBI S9012W PNP Transistor Featuring Excellent hFE Linearity and SOT323 Package
Product Overview The S9012W is a PNP transistor designed with excellent hFE linearity, making it a complementary component to the S9013T. This transistor is suitable for various electronic applications requiring reliable performance. Product Attributes Device Type: Transistor (PNP) Package: SOT-323 Marking: 2T1 Technical Specifications Symbol Parameter Test Conditions MIN TYP MAX Units MAXIMUM RATINGS (TA=25 unless otherwise noted) VCBO Collector-Base Voltage -40 V VCEO
Plastic packaged CBI BC847B transistor ideal for switching and AF amplifier electronic applications
Product Overview This NPN transistor is ideally suited for automatic insertion, making it a versatile component for switching and AF amplifier applications. Designed for reliability and efficiency, it offers robust performance characteristics. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Package Type: SOT-23 Material: Plastic surface mounted package Technical Specifications Parameter Symbol Test Conditions BC846 BC847 BC848 Units MAXIMUM
High Current NPN Silicon Power Transistor CBI 2SD882PU Designed for Amplification and Switching Uses
Product Overview The 2SD882U is an NPN Silicon Power Transistor designed for various electronic applications. It is categorized into four groups (R, Q, P, E) based on its DC current gain (hFE). This transistor offers robust performance with high current handling capabilities and defined saturation voltages, making it suitable for power switching and amplification circuits. Product Attributes Type: NPN Silicon Power Transistor Current Gain Groups: R, Q, P, E Package Outline:
Electronic transistor CBI 2SB806 with plastic encapsulation and high collector emitter voltage rating
Product Overview This is a plastic-encapsulated transistor designed for various electronic applications. It features a high collector-to-emitter voltage (VCEO) of -120V. The device is available in different DC current gain (hFE) classifications, including KR (90-180), KQ (135-270), and KP (200-400), allowing for selection based on specific gain requirements. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Package Type: SOT-89-3L Encapsulation:
Fast Switching NPN Epitaxial Planar Silicon Transistor CBI 2SD1624 with Wide Area of Safe Operation
Product Overview The 2SD1624 is an NPN Epitaxial Planar Silicon Transistor designed for applications requiring fast switching speeds, low collector-to-emitter saturation voltage, and large current capacity with a wide Area of Safe Operation (ASO). This transistor is suitable for various electronic circuits where these characteristics are critical. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Type: NPN Epitaxial Planar Silicon Transistor
NPN Digital Transistor CBI DTC143ZCA Featuring Built in Bias Resistors for Simplified Circuit Operation
Product Overview This NPN Digital Transistor features built-in bias resistors, simplifying inverter circuit configuration without external input resistors. The integrated thin-film resistors offer complete isolation for negative input biasing and minimize parasitic effects. Operation is streamlined by setting only the on/off conditions, making device design straightforward. These transistors are suitable for applications requiring simplified digital logic implementation.
Dual Bias Resistor Transistor CBI MMUN5235DW NPN Silicon Surface Mount Device with Monolithic Resistor Network
Product Overview The MMUN5211DW Series Dual Bias Resistor Transistors are NPN silicon surface mount transistors featuring a monolithic bias resistor network. These devices integrate a single transistor with a series base resistor and a base-emitter resistor, effectively replacing discrete components and simplifying circuit design. Designed for low power surface mount applications where board space is limited, the MMUN5211DW series offers reduced component count and board
Electronic Design Transistor CBI MMBTSC4081W NPN Silicon Epitaxial Planar with Robust Maximum Ratings
Product Overview This NPN Silicon Epitaxial Planar Transistor is designed for various electronic applications. It is subdivided into three groups (Q, R, and S) based on its DC current gain, offering flexibility for different circuit requirements. With robust absolute maximum ratings and key electrical characteristics detailed, this transistor provides reliable performance for demanding electronic designs. Product Attributes Type: NPN Silicon Epitaxial Planar Transistor Origin
General purpose transistor CBI S8050 NPN with 05 amp collector current and SOT23 surface mount package
Product Overview The S8050 is an NPN transistor designed for general-purpose applications. It offers a continuous collector current of 0.5A and is complementary to the S8550 transistor. This component is housed in a plastic surface-mounted SOT-23 package. Product Attributes Marking: J3Y Package Type: SOT-23 Technical Specifications Parameter Symbol Test Conditions Min Typ Max Units MAXIMUM RATINGS (TA=25 unless otherwise noted) Collector-Base Voltage VCBO 40 V Collector
Small SOT323 Package NPN Silicon Transistor CBI MMBT2222AW Ideal for Switching and Amplifier Circuits
Product Overview The NPN Silicon Epitaxial Planar Transistor is designed for switching and amplifier applications. It is complementary to the MMBT2907AW and is available in a small SOT-323 package. This transistor offers reliable performance for various electronic circuits. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Type: NPN Silicon Epitaxial Planar Transistor Complementary to: MMBT2907AW Package: SOT-323 Marking: K3P/1P Technical Specificat
Space dual transistor NPN NPN CBI BC846B in SOT 23 6L package for optimized electronic device design
Product Overview The Heyuan China Base Electronics Technology Co., Ltd. SOT-23-6L dual transistor offers a compact NPN+NPN configuration, integrating two transistors into a single package. This design significantly reduces component count and board space, while ensuring no mutual interference between the transistors. Ideal for applications requiring space-saving and efficient component integration. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd.
Surface Mount Dual Bias Resistor Transistor CBI MMUN5216DW with Integrated Resistor Network in SOT363
Product Overview The MMUN5211DW Series Dual Bias Resistor Transistors are NPN silicon surface mount transistors featuring a monolithic bias resistor network. These devices integrate a single transistor with a series base resistor and a base-emitter resistor, effectively replacing discrete components and their external bias networks. This integration simplifies circuit design, reduces board space, and lowers component count, making them ideal for low-power surface mount
Integrated Dual Bias Resistor Transistors CBI MMUN5232DW in Compact SOT363 Package for Surface Mount
Product Overview The MMUN5211DW Series Dual Bias Resistor Transistors (BRT) are NPN silicon surface mount transistors featuring a monolithic bias resistor network. Each BRT integrates a single transistor with a series base resistor and a base-emitter resistor, effectively replacing discrete components and their external bias networks. This integration simplifies circuit design, reduces board space, and lowers component count, making them ideal for low-power surface mount
NPN transistor CBI MMBT5551W medium power amplification switching applications surface mount package
Product Overview This NPN transistor is designed for medium power amplification and switching applications. It features a small surface mount package and is complementary to the MMST5401. Its robust design ensures reliable performance in various electronic circuits. Product Attributes Marking: G1 Package Type: SOT323 Material: Plastic-Encapsulate Transistors Origin: Heyuan China Base Electronics Technology Co., Ltd. Technical Specifications Parameter Symbol Test Conditions
NPN Transistor CBI 2SC2873U High Speed Switching and Power Amplification with Low Saturation Voltage
Product Overview This NPN transistor is designed for high-speed switching applications and power amplification. It features a small flat package, a low collector-emitter saturation voltage, and a complementary type to the 2SA1213. Ideal for use in power amplifier and switching circuits. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Package Type: SOT-89 Encapsulation: Plastic Technical Specifications Parameter Symbol Test Conditions Min Typ Max
CBI DTC143EUA Digital Transistor NPN Featuring Built in Bias Resistors and Thin Film Resistors for Circuit Design
Product Overview The Digital Transistor (NPN) with built-in bias resistors simplifies circuit design by eliminating the need for external input resistors, enabling easy configuration of inverter circuits. These transistors feature thin-film resistors with complete isolation, allowing for negative biasing of the input and minimizing parasitic effects. Operation is streamlined by setting only the on/off conditions, making device design more efficient. Available in multiple
CBI S8050 0.8A NPN transistor with 0.8A continuous collector current and compact SOT23 surface mount
Product Overview This NPN transistor is designed for general-purpose applications and is complementary to the S8550. It offers a continuous collector current of 0.8A and a collector dissipation of 0.3W. The device is housed in a plastic surface-mounted SOT-23 package. Product Attributes Marking: J3Y Origin: Heyuan China Base Electronics Technology Co., Ltd. Package Type: SOT-23 Technical Specifications Parameter Symbol Test Conditions MIN TYP MAX Units Collector-Base Voltage
Dual PNP Transistor in Plastic Encapsulated SOT363 Package CBI MMDT4403DW for Amplification Switching
Product Overview This product features epitaxial planar die construction, making it ideal for low power amplification and switching applications. It is a dual PNP+PNP transistor housed in a plastic-encapsulated SOT-363 package. Product Attributes Construction: Epitaxial Planar Die Package Type: SOT-363 Encapsulation: Plastic Type: Dual Transistor (PNP+PNP) Origin: Heyuan China Base Electronics Technology Co., Ltd. Technical Specifications Parameter Symbol Test Conditions Min
