Single Bipolar Transistors
MMUN5233DW Dual Bias Resistor Transistor NPN Silicon Surface Mount Device with Integrated Resistors
Product Overview The MMUN5211DW Series Dual Bias Resistor Transistors (BRT) are NPN silicon surface mount transistors featuring a monolithic bias resistor network. Each BRT integrates a single transistor with a series base resistor and a base-emitter resistor, effectively replacing discrete components and simplifying circuit design. This series is designed for low power surface mount applications where board space is limited, offering advantages such as reduced board space
Dual digital transistor CBI UMH3N with integrated DTC143T chips providing interference free and operation
Product Overview This product features two independent DTC143T digital transistor chips integrated into a single package, offering dual digital transistor functionality (NPN+NPN). The independent nature of the transistor elements eliminates interference, leading to improved performance. This integrated design significantly reduces mounting costs and required board area by half. It is suitable for applications requiring compact and reliable digital transistor solutions.
High Voltage NPN Silicon Transistor CBI MMBT13001 in SOT23 Package for Amplification and Switching
Product Overview This NPN Silicon Epitaxial Planar Transistor is designed for general-purpose applications. It features a SOT-23 plastic package, making it suitable for surface mounting. The transistor offers robust performance with high breakdown voltages and controlled current gain, ideal for switching and amplification circuits in various electronic devices. Product Attributes Type: NPN Silicon Epitaxial Planar Transistor Package: SOT-23 Plastic Package Origin: Heyuan
NPN Digital Transistor Model CBI DTC144EE with Built in Bias Resistors and Parasitic Effect Reduction
Product Overview The DTC144EE/DTC144EUA/DTC144EKA/DTC144ECA are NPN digital transistors featuring built-in bias resistors. This integrated design eliminates the need for external input resistors, simplifying circuit configuration into an inverter circuit. The thin-film bias resistors are fully isolated, allowing for negative input biasing and minimizing parasitic effects. Operation is simplified to setting on/off conditions, making device design easier. Product Attributes
SOT23 Package PNP Silicon Transistor CBI MMBT2907A for Switching and AF Amplifier Electronic Circuit
Product Overview The MMBT2907 / MMBT2907A is a PNP silicon epitaxial planar transistor designed for switching and AF amplifier applications. This transistor is categorized into groups based on its DC current gain. It is housed in a SOT-23 plastic package. Product Attributes Package Type: SOT-23 Plastic Transistor Type: PNP Silicon Epitaxial Planar Application: Switching and AF amplifier Technical Specifications Parameter Symbol MMBT2907 MMBT2907A Unit Absolute Maximum Ratings
High reliability transistor CBI MMBT5551T for medium power amplification and switching applications
Product Overview The MMBT5551T is a complementary NPN transistor designed for medium power amplification and switching applications. It offers excellent performance characteristics, making it an ideal choice for various electronic circuits requiring reliable amplification and switching capabilities. Product Attributes MARKING: G1 Technical Specifications Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100A, IE=0 180 V Collector
Digital Transistor PNP Featuring Built in Bias Resistors and Thin Film Resistors CBI DTA143ZKA Model
Product Overview This Digital Transistor (PNP) features built-in bias resistors, simplifying inverter circuit configuration by eliminating the need for external input resistors. The thin-film resistors offer complete isolation for negative input biasing and minimize parasitic effects, allowing for easy device design focused solely on on/off conditions. These transistors are designed for efficient operation in various electronic applications. Product Attributes Brand: Heyuan
NPN Silicon Epitaxial Transistor CBI BC850B SOT23 Package Ideal for Switching Amplifier Circuits
Product Overview The BC846 to BC850 series are NPN silicon epitaxial transistors designed for switching and amplifier applications. Complementary PNP transistors in the BC856 to BC860 series are recommended for paired applications. These transistors are housed in a SOT-23 plastic package. Product Attributes Package Type: SOT-23 Plastic Package Transistor Type: NPN Silicon Epitaxial Transistor Complementary Type: PNP transistors BC856...BC860 Technical Specifications Parameter
High Gain NPN Transistor CBI 2SC1623 with Plastic Surface Mount Package and 50 Volt Breakdown Voltage
Product Overview The 2SC1623 is an NPN transistor featuring high DC current gain (hFE=200 Typ) and high voltage capability (VCEO=50V). It is designed for applications requiring efficient amplification and switching. Product Attributes Marking: L6 Package Type: SOT-23 Package Outline: Plastic surface mounted package; 3 leads Technical Specifications Parameter Symbol Test Conditions Min Typ Max Unit Collector-Base breakdown voltage V(BR)CBO IC=100A, IE=0 60 V Collector-Emitter
PNP Silicon Epitaxial Transistor CBI BC856AT Designed for Amplifier and Switching Electronic Circuit
Product Overview This PNP Silicon Epitaxial Transistor is designed for switching and amplifier applications. It offers a range of voltage and current ratings suitable for various electronic circuits. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Material: Silicon Epitaxial Type: PNP Transistor Technical Specifications Parameter Symbol Model Value Unit Collector Base Voltage (Absolute Maximum Rating) -VCBO BC856T 80 V BC857T, BC860T 50 V BC858T,
Dual transistor PNP PNP CBI MMDT3906DW epitaxial planar die in SOT 363 package suitable for circuits
Product Overview This is a SOT-363 plastic-encapsulated dual transistor (PNP+PNP) designed for low power amplification and switching applications. It features epitaxial planar die construction and is suitable for various electronic circuits requiring PNP transistor functionality. Product Attributes Package Type: SOT-363 Construction: Epitaxial planar die Type: Dual Transistor (PNP+PNP) Marking: K3N Technical Specifications Parameter Symbol Test Conditions Value Units Maximum
General purpose NPN transistor CBI C945 with low noise and excellent hFE linearity in SOT23 package
Product Overview The C945 is an NPN transistor designed for general-purpose applications. It features excellent hFE linearity and low noise characteristics, making it suitable for various electronic circuits. This transistor is complementary to the A733 and is supplied in a SOT-23 package. Product Attributes Marking: CR Package: SOT-23 (Plastic surface mounted package; 3 leads) Technical Specifications Parameter Symbol Test Conditions MIN TYP MAX Units MAXIMUM RATINGS (TA=25
Compact SOT23 PNP transistor CBI S9015 designed for general purpose amplification and switching circuits
Product Overview The S9015 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It serves as a complementary device to the S9014 transistor and is housed in a compact SOT-23 package. This transistor offers a maximum collector current of 0.1A and a collector power dissipation of 0.2W. Product Attributes Marking: M6 Package Type: SOT-23 (Plastic surface mounted package; 3 leads) Technical Specifications Parameter
SOT-23 Package NPN Transistor CBI MMBTRC104SS Ideal for in Drive and Interface Circuit Applications
Product Overview This NPN Silicon Epitaxial Planar Transistor is designed for switching and interface circuit and drive circuit applications. It features built-in bias resistors, simplifying circuit design and reducing the quantity of parts and manufacturing processes. Available in a SOT-23 plastic package. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Package Type: SOT-23 Plastic Package Technical Specifications Model R1 (Input) (k) R2 (Emitter
High Voltage NPN Transistor CBI FMMT493 Featuring Compact SOT23 Plastic Encapsulation for Electronics
Product Overview The FMMT493 is an NPN transistor designed for various electronic applications. It offers complementary pairing with the FMMT593. Key features include a high collector-emitter voltage rating and a compact SOT-23 plastic-encapsulate package, making it suitable for surface mounting. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Type: Transistor (NPN) Complementary Type: FMMT593 Marking: 493 Package: SOT-23 Plastic-Encapsulate
CBI DTC114EUA Digital Transistor Featuring Built in Bias Resistors for Simplified Circuit Integration
Product Overview Digital Transistors with built-in resistors simplify circuit design by eliminating the need for external input resistors, enabling easy configuration of inverter circuits. These NPN transistors feature thin-film bias resistors with complete isolation for negative input biasing and minimal parasitic effects, making them ideal for applications where on/off conditions are the primary design consideration. Available in various package types including SOT-523, SOT
NPN Surface Mount Transistor CBI MMUN5214DW Dual Bias Resistor with Base Emitter Resistor Integration
Product Overview The MMUN5211DW Series Dual Bias Resistor Transistors (BRT) are NPN silicon surface mount transistors featuring a monolithic bias resistor network. Each BRT integrates a single transistor with a series base resistor and a base-emitter resistor, effectively replacing discrete components and their associated bias networks. This integration simplifies circuit design, reduces board space, and lowers component count, making them ideal for low-power surface mount
PNP Transistor CBI SS8550W Featuring Maximum Collector Current 1.5A and Collector Emitter Voltage 25V
Product Overview This PNP transistor is a complementary component to the SS8050W, designed for various electronic applications. It offers a maximum collector current of -1.5 A and a collector power dissipation of 0.2 W. The device is suitable for operation within a junction temperature of 150 . Product Attributes Type: PNP Transistor Marking: Y2 Complementary to: SS8050W Technical Specifications Parameter Symbol Test Conditions Min Max Units Collector-Base Voltage VCBO (TA=25
CBI S8550 0.8A PNP transistor offering 0.8A collector current and housed in SOT23 package for general
Product Overview This PNP transistor, complimentary to the S8050, is designed for general-purpose applications. It offers a continuous collector current of 0.8A and a collector power dissipation of 0.3W. The transistor is housed in a SOT-23 package, making it suitable for surface mounting. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Package Type: SOT-23 Technical Specifications Parameter Symbol Test Conditions Min Max Units Collector-Base
Plastic Encapsulated Dual Transistor Package Featuring CBI BC846PN NPN and PNP Transistors in SOT363
Product Overview This product is a plastic-encapsulated dual transistor package containing isolated NPN and PNP transistors. It is designed for electronic applications requiring complementary transistor functions within a single component. The device features epitaxial die construction and is supplied in a SOT-363 package. Product Attributes Brand: CJ-elec (implied by website reference) Origin: Heyuan China Base Electronics Technology Co., Ltd. Package Type: SOT-363 Model
