Single FETs, MOSFETs

Product OverviewThe SL15N65CD is a 650V N-Channel Super-JMOSFET produced using Slkor's advanced Superjunction MOSFET technology. This technology is designed to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in avalanche and commutation modes. It is well-suited for high efficiency switched mode power supplies.Product AttributesBrand: SlkorTechnology: Super-JMOSFETTechnical SpecificationsModelFeatureRDS(on)typQgAvalanche

Product OverviewThe IRLML9303-SL is a P-Channel MOSFET designed for system and load switching applications. It features an industry-standard pinout and is compatible with existing surface mount techniques, offering a robust solution for various electronic systems.Product AttributesBrand: SLKOR MicroDevice Code: R3AProduct Code: IRLML9303-SLTechnical SpecificationsParameterConditionMinTypMaxUnitAbsolute Maximum RatingsDrain-Source Breakdown VoltageVGS=0VID=-250A-30----VZero

Product OverviewThe VBA1203M is a 1-Channel 200V N-Channel Trench Power MOSFET designed for primary side switching applications. It features a high junction temperature of 175C, optimized for PWM applications, and is 100% Rg tested. This MOSFET offers robust performance and reliability, compliant with RoHS Directive 2002/95/EC.Product AttributesBrand: VBsemiOrigin: TaiwanCertifications: RoHS Directive 2002/95/EC, Halogen-Free (JEDEC JS709A)Technical SpecificationsParameterSym

Product Overview The SP85N04AGHTO is an 85V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. This device features fast switching, low gate charge, and low RDS(on), making it suitable for PWM applications, hard-switched, and high-frequency circuits, as well as power management. It is 100% tested for single pulse avalanche energy. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP85N04AGHTO Package: TOLL Technical Specificati

Product OverviewThe SL3404 is a 30V/5.8A N-Channel MOSFET featuring Trench Power LV MOSFET technology for high density cell design and low RDS(ON). It offers high-speed switching capabilities, making it suitable for battery protection, load switching, and power management applications.Product AttributesDevice Code: A04TBrand: SLKORMicro (implied by website URL)Origin: China (implied by website URL)Technical SpecificationsParameterSymbolConditionMinTypMaxUnitStatic Electrical

Product OverviewThe SL2304 is an N-Channel Power MOSFET featuring TrenchFET technology. It is designed for load switching in portable devices and DC/DC converters, offering efficient power management.Product AttributesBrand: SLKORMicroOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitStatic Electrical CharacteristicsStatic drain-source breakdown voltageV(BR)DSSVGS = 0V

Product OverviewThis N-Channel Enhancement Mode Field Effect Transistor is designed for power switching applications, particularly in hard-switched and high-frequency circuits, and uninterruptible power supplies. It features a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, and excellent stability and uniformity with high EAS. The package is optimized for good heat dissipation.Product AttributesBrand: SLKormicroModel:

Product OverviewThe SQD40031EL_GE3-VB is a P-Channel MOSFET designed for various electronic applications. It offers key features such as low on-state resistance and compliance with the RoHS Directive 2002/95/EC.Product AttributesBrand: VBsemiOrigin: TaiwanCertifications: RoHS Directive 2002/95/EC compliantTechnical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max.UnitStatic CharacteristicsDrain-Source Breakdown VoltageVDSVGS = 0 V, ID = - 250 A---30VGate Threshold

Wolfspeed EAB450M12XM3: 1200 V, 2.6 m Silicon Carbide Half-Bridge Module Product Overview The Wolfspeed EAB450M12XM3 is a 1200 V, 2.6 m Silicon Carbide (SiC) half-bridge module designed for high-power density applications. It features a high junction temperature operation of 175 C and a low inductance design of 6.7 nH, utilizing third-generation SiC MOSFET technology. Key benefits include a terminal layout for direct bus bar connection, enabling a simple, low inductance

Product Overview The SP2102CT3 is a 20V N-Channel MOSFET from Siliup Semiconductor Technology Co., Ltd. It offers high power and current handling capabilities in a surface mount SOT-323 package. Key applications include battery switches and DC/DC converters. Product Attributes Brand: Siliup Semiconductor Technology Co., Ltd. Product Code: SP2102CT3 Channel Type: N-Channel MOSFET Package: SOT-323 Technical Specifications Parameter Symbol Conditions Min. Typ. Max. Unit Product

Product Overview The SSFP4806 is a 40V N-Channel MOSFET utilizing advanced MOSFET process technology to achieve high cell density and low on-resistance. This design makes the device highly efficient and reliable, ideal for high-efficiency switched-mode power supplies and a wide range of other applications requiring fast switching and reverse body recovery. Key benefits include low on-resistance with low gate charge, contributing to overall system efficiency. Product

Product Overview The SP40N25TQ is a 250V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-frequency switching and synchronous rectification, this MOSFET features fast switching speeds, low gate charge, and low Rdson. It is 100% tested for single pulse avalanche energy and is ideal for DC-DC converter applications. The device comes in a TO-220-3L package. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code:

Product OverviewThe BSS138KDW is a 50V/0.2A Dual N-Channel MOSFET designed for high-density cell applications, offering low RDS(on) for efficient operation. It functions as a voltage-controlled small signal switch, providing a rugged and reliable solution with high saturation current capability and ESD protection. This MOSFET is ideal for load switching in portable devices and DC/DC converters.Product AttributesBrand: SLKORMicroModel: BSS138KDWPackage: SOT-363Technical

Product OverviewThe TX20N03 is a N-channel MOSFET designed for high-efficiency synchronous buck converter applications. It features excellent RDSON and low gate charge, ensuring optimal performance and reliability. This device is 100% EAS guaranteed and available as a Green Device, making it suitable for power management solutions.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Green Device AvailableTechnic

Product Overview This N+P Channel MOSFET utilizes advanced trench technology and design to provide excellent RDS(on) with low gate charge. It is suitable for a wide variety of applications. Key features include low gate charge, green device availability, advanced high cell density trench technology for ultra-low RDS(ON), and an excellent package for good heat dissipation. Product Attributes Brand: SLKORmicro Model: SLP170C04D Package: SOP-8 Technical Specifications Parameter

Product OverviewThis Power MOSFET utilizes advanced TRENCH technology, engineered to minimize conduction losses, deliver superior switching performance, and provide robust protection against high energy pulses in avalanche and commutation modes. It is ideal for PWM applications, load switching, and power management scenarios.Product AttributesBrand: SLKORMicroModel: SL90N03DTechnology: Advanced TRENCHTesting: 100% avalanche testedCapability: Improved dv/dtTechnical Specificat

Product OverviewThe 2N7002 is an N-Channel Power MOSFET designed for high power and current handling capabilities. It features VDS = 60V and ID = 0.115A with RDS(ON) < 7.5 @ VGS=5V. This lead-free product is suitable for applications such as battery protection, load switching, and power management.Product AttributesBrand: slkormicroCertifications: Lead free product is acquiredTechnical SpecificationsCharacteristicSymbolMinTypMaxUnitDrain-Source Breakdown VoltageBVDSS60VGate

SI4559ADY-T1-E3-VBN- and P-Channel 60-V (D-S) MOSFETs designed for applications such as CCFL inverters. These devices feature Trench Power MOSFET technology, offering high performance and reliability. They are 100% Rg and UIS tested and halogen-free.Product AttributesBrand: Vishay (implied by datasheet context and common industry practice for this part number structure)Certifications: Halogen-free According to IEC 61249-2-21 AvailableTechnical SpecificationsParameterSymbolN

Product OverviewThe SL3401S is a P-Channel Power MOSFET designed for high power and current handling capabilities. It features low on-state resistance at various gate-source voltages, making it suitable for applications such as PWM, load switching, and power management. This lead-free product is available in a surface mount package.Product AttributesBrand: SLKormicroOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Lead free product is acquiredTe

MACOM CGH40090PP RF Power GaN HEMT Product Overview The MACOM CGH40090PP is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications. Operating from a 28-volt rail, it offers high efficiency, high gain, and wide bandwidth capabilities, making it ideal for linear and compressed amplifier circuits. The transistor is available in a 4-lead flange package. Product Attributes Brand: MACOM