Single Bipolar Transistors

Product OverviewThe BFP843 is a robust, low-noise, broadband, pre-matched bipolar RF transistor designed for demanding RF applications. It offers excellent performance characteristics suitable for various high-frequency circuits.Product AttributesBrand: Infineon TechnologiesProduct Name: BFP843Product Type: Robust Low Noise Broadband Pre-Matched Bipolar RF TransistorPackage: SOT343Origin: GermanyTechnical SpecificationsParameterSymbolMinTypMaxUnitDescriptionMaximum RatingsCol

BU406 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORThe BU406 is a high voltage, fast-switching NPN power transistor designed for applications such as high frequency switching power supplies, high frequency power transformation, and general power amplification circuits. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, in an environmentally friendly (RoHS) package.Product AttributesBrand: BU406Certifications: RoHSTechnica

Product OverviewThe BF776 is a high-performance NPN bipolar RF transistor designed for low-noise amplifier applications. It offers a low minimum noise figure of typically 0.8 dB @ 1.8 GHz and is suitable for a wide range of non-automotive applications including WLAN, WiMax, UWB, Bluetooth, GPS, SDARs, DAB, LNB, UMTS/LTE, and ISM bands. The transistor comes in an easy-to-use standard package with visible leads and is Pb-free (RoHS compliant).Product AttributesBrand: Infineon

Product OverviewThe BCR116 is an NPN silicon digital transistor designed for switching, inverter, interface, and driver circuits. It features built-in bias resistors (R1=4.7 k, R2=47 k) for simplified circuit design. The BCR116S variant offers two internally isolated transistors with good matching in a single multichip package. All BCR116 series transistors are Pb-free (RoHS compliant) and qualified according to AEC Q101.Product AttributesBrand: Infineon TechnologiesMaterial:

Product OverviewThe BC856S/U and BC857S are PNP Silicon AF Transistor Arrays designed for AF input stages and driver applications. They offer high current gain, low collector-emitter saturation voltage, and feature two internally isolated transistors with good matching in a single package. These devices are Pb-free (RoHS compliant) and qualified according to AEC Q101.Product AttributesBrand: Infineon TechnologiesCertifications: AEC Q101, Pb-free (RoHS compliant)Technical

Product OverviewThe BFS17S is a NPN Silicon RF Transistor designed for broadband amplifiers up to 1 GHz. It is suitable for collector currents ranging from 1 mA to 20 mA. This Pb-free (RoHS compliant) package is ESD sensitive and requires careful handling.Product AttributesBrand: Infineon TechnologiesCertifications: Pb-free (RoHS compliant)Package Type: SOT363ESD Sensitive: YesTechnical SpecificationsParameterSymbolValueUnitNotesMaximum RatingsCollector-emitter voltageVCEO15V

Product OverviewThe ISC BD677 is a Silicon NPN Darlington Power Transistor designed for use as output devices in complementary general-purpose amplifier applications. It offers a collector-emitter breakdown voltage of 60V and a minimum DC current gain (hFE) of 750 at 1.5A, making it suitable for robust device performance and reliable operation. It is a complement to the BD678 type.Product AttributesBrand: ISCType: Silicon NPN Darlington Power TransistorRegistered Trademark:

Product OverviewThe BFP720 is a wideband NPN RF heterojunction bipolar transistor (HBT) designed for high-frequency applications. It offers a high transition frequency (fT = 45 GHz) enabling low noise figures at elevated frequencies, significant gain, and excellent linearity (OIP3). This product is qualified for industrial applications according to JEDEC standards.Product AttributesBrand: InfineonMaterial: SiGe:CPackage: SOT343Certifications: Qualified for industrial

ISC BD680 PNP Darlington Power TransistorThe ISC BD680 is a Silicon PNP Darlington Power Transistor designed for use as output devices in complementary general-purpose amplifier applications. It offers a Collector-Emitter Breakdown Voltage of -80V and a minimum DC Current Gain of 750 at IC= -1.5 A. This transistor is a complement to the BD679 type and features minimum lot-to-lot variations for robust device performance and reliable operation.Product AttributesBrand:

Product OverviewThe TC233 / TC234 / TC237 are 32-bit single-chip microcontrollers from Infineon Technologies. These AC-Step microcontrollers are designed for various applications, offering advanced features and performance.Product AttributesBrand: Infineon TechnologiesOrigin: GermanyTechnical SpecificationsModelPackagePinsRevisionPublication DateTC233 / TC234 / TC237PG-LFBGA-292-6292V 1.02017-03TC237xPG-LFBGA-292-6292V 1.02017-03TC23x-ADASPG-TQFP-144-27144V 1.02017-03TC233xPG

Product OverviewThe BC856S/U and BC857S are PNP Silicon AF Transistor Arrays designed for AF input stages and driver applications. They offer high current gain, low collector-emitter saturation voltage, and feature two internally isolated transistors with good matching in a single package. These devices are Pb-free (RoHS compliant) and qualified according to AEC Q101.Product AttributesBrand: Infineon TechnologiesMaterial: SiliconCertifications: AEC Q101, Pb-free (RoHS

Infineon RF TransistorsInfineon's RF transistors offer robust, flexible, small, and reliable solutions for complementary wireless applications. They are designed to meet the increasing demand for universal network availability and connectivity, supporting higher data rates and an expanding ecosystem of connected devices. These transistors provide superior performance, versatility, and supply security, making them ideal for various wireless communication systems, including

Product OverviewThe BFP740 is a wideband NPN RF heterojunction bipolar transistor (HBT) designed for high-performance applications. It offers a low noise figure, high gain, and excellent linearity, making it suitable for a wide range of wireless communication, satellite, multimedia, and ISM applications.Product AttributesBrand: InfineonTechnology: SiGe:CDevice Type: NPN RF bipolar transistorProduct Validation: Qualified for industrial applications according to JEDEC47/20/22

Product Overview The BCR158 is a PNP Silicon Digital Transistor designed for switching circuits, inverters, interface circuits, and driver circuits. It features built-in bias resistors (R1=2.2 k, R2=47 k), a Pb-free (RoHS compliant) package, and is qualified according to AEC Q101 standards. Available in SOT23 and SOT323 packages. Product Attributes Brand: Infineon Technologies Material: Silicon Certifications: AEC Q101, RoHS compliant Package Options: SOT23, SOT323 Technical

Product OverviewThe MMDTA114YE is a PNP Silicon Epitaxial Planar Digital Transistor designed to simplify circuit design and reduce component count. It features built-in bias resistors, making it ideal for applications where space and manufacturing efficiency are critical. This transistor is Halogen and Antimony Free (HAF) and RoHS compliant.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Silicon Epitaxial PlanarColor: Not specifiedCertifications: Halogen

Infineon RF TransistorsInfineon's RF transistors are robust, flexible, and reliable devices designed for complementary wireless solutions. They offer superior RF performance, signal quality, and robustness, making them ideal for increasing data traffic in mobile systems and infrastructure. The 7th and 8th generations, based on Silicon-germanium (SiGe) B9 technology, provide excellent linearity, noise figures, and ESD protection, enabling enhanced system sensitivity,

Product DescriptionThe MUN2211 Series Bias Resistor Transistor (BRT) replaces a single transistor and its external resistor bias network by integrating a transistor with a monolithic bias resistor into a single device. This integration reduces system cost and board space. The BRT is housed in a SOT-23 package, suitable for low-power surface mount applications. It simplifies circuit design and reduces component count. The SOT-23 package features modified gull-winged leads that

Product OverviewThe DTC143Z series are digital transistors (NPN) featuring built-in bias resistors. This design eliminates the need for external input resistors, simplifying circuit configuration into an inverter. The integrated thin-film resistors offer isolation for negative biasing and minimize parasitic effects. Operation is straightforward, requiring only the setting of on/off conditions, which eases device design.Product AttributesBrand: Not specifiedOrigin: Not

Product OverviewThe PT5311N is a DUAL DIGITAL TRANSISTOR (NPN+PNP) designed for applications where independent transistor elements are required, eliminating interference. This dual transistor configuration allows for significant reductions in mounting cost and area by cutting them in half compared to discrete components. It is suitable for various electronic circuits requiring both NPN and PNP transistor functionality in a single package.Product AttributesBrand: JinYu

Product OverviewThe S8550 is a PNP transistor in a TO-92 plastic package, designed for general-purpose applications. It offers excellent hFE linearity, making it suitable for various electronic circuits.Product AttributesBrand: SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTDOrigin: Not specifiedMaterial: Plastic-EncapsulateColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolTest conditionsMINTYPMAXUnitsCollector-Base VoltageVCBO-40VCollecto