Single Bipolar Transistors

Product OverviewThe BFP405F is a low-profile, wideband silicon NPN RF bipolar transistor designed for high-frequency applications. It features a grounded emitter (SIEGET) structure, offering low noise characteristics and suitability for oscillators up to 12 GHz. This device provides cost competitiveness without compromising ease of use.Product AttributesBrand: InfineonMaterial: SiliconCertifications: Qualified for industrial applications according to JEDEC47/20/22Sensitive

Product OverviewThe BFR380F is a high-linearity, low-noise silicon bipolar RF transistor designed for driver amplifier applications. It offers an output compression point of 19.5 dBm at 1.8 GHz and a low noise figure of 1.1 dB at 1.8 GHz, making it ideal for oscillators up to 3.5 GHz. The collector design supports a 5 V supply voltage, and it is available in a Pb-free, halogen-free, thin small flat package with visible leads. Qualification reports according to AEC-Q101 are

Product OverviewThe ISC 2SC2336 is a Silicon NPN Power Transistor designed for audio frequency and high frequency power amplification. It features good linearity of hFE, a high collector-emitter breakdown voltage of 180V (Min), and a wide area of safe operation. This transistor is a complement to the 2SA1006 type and offers minimum lot-to-lot variations for robust device performance and reliable operation.Product AttributesBrand: ISCTrademark: ISC & ISCsemiOrigin: SiliconType

Product OverviewThe ISC 2SC5027 is a Silicon NPN Power Transistor designed for high-speed switching applications. It features a high Collector-Emitter Breakdown Voltage of 800V (Min) and offers minimum lot-to-lot variations for robust device performance and reliable operation.Product AttributesBrand: ISCTrademark: ISC & ISCsemiMaterial: SiliconOrigin: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsSymbolParameterConditionsMinTyp.MaxUnitV

Product OverviewThe BCR523 and BCR523U are NPN Silicon Digital Transistors designed for switching, inverter, and driver circuits. They feature built-in bias resistors (R1= 1 k, R2= 10 k). The BCR523U offers two internally isolated transistors with good matching in a single package. These components are Pb-free (RoHS compliant) and qualified according to AEC Q101.Product AttributesBrand: Infineon TechnologiesCertifications: RoHS compliant, AEC Q101Technical SpecificationsTypeM

NPN Silicon AF Transistor The BC817 and BC818 series are NPN silicon AF transistors designed for general audio frequency applications. They offer high collector current, high current gain, and low collector-emitter saturation voltage. These transistors are available in complementary PNP types (BC807/BC808 series) and come in Pb-free, RoHS-compliant packages, qualified according to AEC Q101 standards. Product Attributes Brand: Infineon Technologies Material: Silicon Certificat

Product OverviewThe BCR158 is a PNP Silicon Digital Transistor designed for switching circuits, inverters, interface circuits, and driver circuits. It features built-in bias resistors (R1=2.2 k, R2=47 k) and is Pb-free (RoHS compliant), qualified according to AEC Q101. Available in SOT23 and SOT323 packages.Product AttributesBrand: Infineon TechnologiesMaterial: SiliconCertifications: AEC Q101, RoHS compliantTechnical SpecificationsPart NumberType MarkingPackageVCEO (V)VCBO

BFP842ESD SiGe:C NPN RF Bipolar TransistorThe BFP842ESD is a high-performance RF heterojunction bipolar transistor (HBT) with integrated ESD protection, designed for 2.3 - 3.5 GHz LNA applications. It offers a unique combination of high-end RF performance and robustness, including a maximum RF input power of 16 dBm and 1 kV HBM ESD hardness. With a high transition frequency (fT) of 57 GHz, it delivers excellent noise performance at high frequencies (NFmin = 0.65 dB at 3.5 GHz

Product OverviewThe BFR340F is a low noise, silicon NPN RF bipolar transistor from Infineon's third-generation RF bipolar transistor family. It is designed for oscillator applications up to 3.5 GHz, offering low current and high breakdown voltage characteristics. This device provides a cost-competitive solution without compromising ease of use.Product AttributesBrand: InfineonMaterial: SiliconCertifications: Qualified for industrial applications according to JEDEC47/20

Product OverviewThe BCR116 is an NPN Silicon Digital Transistor designed for switching circuits, inverters, interface circuits, and driver circuits. It features built-in bias resistors (R1=4.7 k, R2=47 k). The BCR116S variant offers two internally isolated transistors with good matching in a single multichip package, suitable for orientation in reels. All packages are Pb-free (RoHS compliant) and qualified according to AEC Q101.Product AttributesBrand: Infineon TechnologiesCe

Product OverviewThe MMBT2222LT1 and MMBT2222ALT1 are general-purpose NPN silicon transistors designed for various applications. They are available in Pb-Free packages and offer reliable performance with distinct voltage and current ratings.Product AttributesBrand: Semiconductor Components Industries, LLC (onsemi)Certifications: Pb-Free Packages AvailableTechnical SpecificationsCharacteristicSymbolMMBT2222LT1MMBT2222ALT1UnitConditionsMAXIMUM RATINGSCollector - Emitter

Product OverviewThe BCR505 is an NPN Silicon Digital Transistor featuring built-in bias resistors (R1= 2.2 k, R2= 10 k). It is Pb-free and RoHS compliant, qualified according to AEC Q101 standards. This transistor is designed for digital applications requiring integrated biasing.Product AttributesBrand: Infineon TechnologiesMaterial: SiliconCertifications: AEC Q101, RoHS compliantPackage: SOT23Technical SpecificationsParameterSymbolValueUnitNotesMaximum RatingsCollector

Product OverviewThe BCR133 is an NPN Silicon Digital Transistor designed for switching, inverter, interface, and drive circuits. It features built-in bias resistors (R1 = 10 k, R2 = 10 k) for simplified circuit design. The BCR133S variant offers two internally isolated transistors with good matching in a single multichip package. These components are Pb-free (RoHS compliant) and qualified according to AEC Q101.Product AttributesBrand: Infineon TechnologiesMaterial: SiliconCer

Product OverviewThe BCR185 is a PNP Silicon Digital Transistor designed for switching circuits, inverters, interface circuits, and driver circuits. It features built-in bias resistors (R1 = 10 k, R2 = 47 k). The BCR185S variant offers two internally isolated transistors with good matching in a single multichip package, suitable for reel orientation. These components are Pb-free (RoHS compliant) and qualified according to AEC Q101.Product AttributesBrand: Infineon Technologies

Product OverviewThe BFR843EL3 is a low noise, dual-band, pre-matched RF bipolar transistor designed for high-speed and low-power consumption applications. It offers a unique combination of high-end RF performance and robustness, including high input power handling and ESD hardness. Its high transition frequency enables excellent noise performance across various frequencies. This transistor is suitable for low voltage applications and is qualified for industrial applications

Infineon RF TransistorsInfineon's RF transistors offer robust, flexible, and reliable solutions for complementary wireless applications. They are designed to enhance system sensitivity, improve interference immunity, and provide stable signal reception and transmission across multiple bands. These transistors are crucial for enabling universal network availability and connectivity in an increasingly mobile society, supporting the tremendous increase in data traffic and the

Product OverviewThe BFS17P is an NPN Silicon RF Transistor designed for broadband amplifiers up to 1 GHz and for mixers and oscillators in sub-GHz applications. It offers excellent performance with a low noise figure and high intercept point, making it suitable for demanding RF designs.Product AttributesBrand: Infineon TechnologiesMaterial: SiliconCertifications: Pb-free (RoHS compliant)Package: SOT23Technical SpecificationsParameterSymbolValueUnitNote or Test ConditionMaximu

Product OverviewThe 3DD13005ED is a high voltage, fast-switching NPN power transistor designed for various power electronics applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, making it suitable for energy-saving lights, electronic ballasts, high-frequency switching power supplies, and general power amplification circuits. This product is RoHS compliant.Product AttributesBrand: Jilin Sino-microelectronics Co.,

Product OverviewThe BFP840FESD is a discrete RF heterojunction bipolar transistor (HBT) with integrated ESD protection, specifically designed for 5 GHz band applications. It offers a unique combination of high RF performance and robustness, featuring a maximum RF input power of 20 dBm and 1.5 kV HBM ESD hardness. With a high transition frequency (fT = 85 GHz), it delivers class-leading noise performance (NFmin = 0.75 dB at 5.5 GHz) and high gain (Gms = 23 dB at 5.5 GHz). This

Product OverviewThe 3DD13007K is a high voltage, fast-switching NPN power transistor designed for demanding applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, making it suitable for energy-saving lamps, electronic ballasts, high-frequency switching power supplies, high-frequency power transformation, and general power amplification circuits. This product is RoHS compliant.Product AttributesBrand: Jilin Sino