Single Bipolar Transistors
Silicon digital transistor Infineon BCR 112 E6327 featuring AEC Q101 certification and RoHS compliance
Product OverviewThe BCR112 is an NPN silicon digital transistor designed for switching circuits, inverters, interface circuits, and driver circuits. It features built-in bias resistors (R1=4.7k, R2=4.7k) and is Pb-free and RoHS compliant, qualified according to AEC Q101. Available in SOT23 and SOT323 packages.Product AttributesBrand: Infineon TechnologiesCertifications: AEC Q101, RoHS compliantMaterial: SiliconPackage Types: SOT23, SOT323Technical SpecificationsParameterSymbo
Silicon NPN AF Transistor Infineon SMBTA06E6327HTSA1 with SOT23 Package and Power Dissipation 330 Milliwatt
Product OverviewThe SMBTA06/MMBTA06 is an NPN Silicon AF Transistor designed for general-purpose amplification. It features a low collector-emitter saturation voltage and is Pb-free (RoHS compliant), qualified according to AEC Q101. Its complementary type is the SMBTA56/MMBTA56 (PNP).Product AttributesBrand: Infineon TechnologiesMaterial: SiliconCertifications: AEC Q101Package: SOT23Type Marking: s1GTechnical SpecificationsParameterSymbolValueUnitConditionsMaximum RatingsColl
NPN Silicon AF Transistor Array Infineon BC817UPNE6327HTSA1 with Two Internally Isolated Transistors
Product Overview The BC817UPN is an NPN Silicon AF Transistor Array designed for AF stages and driver applications. It features high current gain, low collector-emitter saturation voltage, and consists of two internally isolated NPN/PNP transistors in a single package. This component is Pb-free and RoHS compliant, qualified according to AEC Q101. Product Attributes Brand: Infineon Technologies Material: NPN Silicon Certifications: AEC Q101, RoHS compliant Package: SC74
Dual Transistor Package Infineon BC857SE6327 PNP Silicon AF Transistor Array for Driver Applications
Product OverviewThe BC856S/U and BC857S are PNP Silicon AF Transistor Arrays designed for AF input stages and driver applications. They offer high current gain, low collector-emitter saturation voltage, and feature two internally isolated transistors with good matching in a single package. These components are Pb-free (RoHS compliant) and qualified according to AEC Q101.Product AttributesBrand: Infineon TechnologiesMaterial: SiliconCertifications: AEC Q101Package Types:
Low Noise Silicon NPN Transistor Infineon BCX70KE6327HTSA1 Suitable for AF Input and Driver Applications
Product OverviewThe BCW60 and BCX70 series are NPN silicon AF transistors designed for AF input stages and driver applications. They offer high current gain, low collector-emitter saturation voltage, and low noise characteristics between 30 Hz and 15 kHz. Complementary PNP types are BCW61 and BCX71. These transistors are Pb-free and RoHS compliant, qualified according to AEC Q101.Product AttributesBrand: Infineon TechnologiesMaterial: SiliconCertifications: AEC Q101, RoHS
Low Voltage PNP Switching Transistor Infineon MMBT2907ALT1HTSA1 with High Junction Temperature Rating
Product OverviewThe SMBT2907A/MMBT2907A is a PNP Silicon Switching Transistor designed for various applications. It features a low collector-emitter saturation voltage and is Pb-free (RoHS compliant). This transistor is qualified according to AEC Q101 standards. Its complementary type is the SMBT2222A/MMBT2222A (NPN).Product AttributesBrand: Infineon TechnologiesCertifications: AEC Q101, RoHS compliantPackage: SOT23Type Marking: s2FTechnical SpecificationsParameterSymbolValue
Silicon NPN Digital Transistor Infineon BCR135SH6327 Featuring Dual Internally Isolated Transistors
Product OverviewThe BCR135 is an NPN Silicon Digital Transistor designed for switching circuits, inverters, interface circuits, and driver circuits. It features a built-in bias resistor (R1=10 k, R2=47 k). The BCR135S variant offers two internally isolated transistors with good matching in a single multichip package. All packages are Pb-free (RoHS compliant) and qualified according to AEC Q101.Product AttributesBrand: Infineon TechnologiesCertifications: AEC Q101, RoHS
Silicon NPN Digital Transistor Infineon BCR512E6327HTSA1 Featuring Built In Bias Resistors for Digital
Product OverviewThe BCR512 is an NPN Silicon Digital Transistor featuring built-in bias resistors (R1= 4.7 k, R2= 4.7 k). It is Pb-free, RoHS compliant, and qualified according to AEC Q101. This transistor is designed for digital applications.Product AttributesBrand: Infineon TechnologiesPackage: SOT23Certifications: AEC Q101, RoHS compliantMaterial: SiliconType Marking: XFsTechnical SpecificationsParameterSymbolValueUnitNotesCollector-emitter voltageVCEO50VCollector-base
Surface mount silicon npn rf bipolar transistor Infineon BFP640H6327 with 42 GHz transition frequency
Product OverviewThe BFP640 is a surface mount, high linearity silicon NPN RF bipolar transistor utilizing SiGe:C technology. It is part of Infineons sixth generation transistor family, offering a transition frequency (fT) of 42 GHz. Its high linearity characteristics at low currents make it suitable for energy-efficient designs up to 8 GHz. This device provides cost competitiveness without compromising ease of use.Product AttributesBrand: InfineonMaterial: SiGe:C technologyCe
Low noise broadband amplifier silicon bipolar RF transistor Infineon BFR93AE6327HTSA1 with high gain
Product OverviewThe BFR93A is a low-noise silicon bipolar RF transistor designed for low-noise, high gain broadband amplifiers. It is suitable for collector currents ranging from 2 mA to 30 mA and is Pb-free (RoHS compliant). This device is ESD sensitive and requires careful handling.Product AttributesBrand: Infineon TechnologiesPackage: SOT23Certifications: AEC-Q101 availableCompliance: Pb-free (RoHS compliant)Technical SpecificationsParameterSymbolValueUnitNotesMaximum
Low noise RF transistor Infineon BFR93AWH6327 ideal for in low distortion amplifiers and oscillators
Product OverviewThe BFR93AW is a low-noise silicon bipolar RF transistor designed for low distortion amplifiers and oscillators operating up to 2 GHz. It is suitable for collector currents ranging from 5 mA to 30 mA and comes in a Pb-free and halogen-free package with visible leads. Qualification reports according to AEC-Q101 are available. This device is ESD sensitive and requires careful handling.Product AttributesBrand: Infineon TechnologiesModel: BFR93AWPackage:
NPN Silicon Darlington Transistor Infineon BCV47E6327HTSA1 with SOT23 Package and High Current Gain
Product OverviewThe BCV27 and BCV47 are NPN Silicon Darlington Transistors designed for general AF applications. They offer high collector current, high current gain, and are Pb-free (RoHS compliant) and qualified according to AEC Q101. Complementary PNP types are BCV26 and BCV46.Product AttributesBrand: Infineon TechnologiesMaterial: SiliconCertifications: AEC Q101Package: SOT23Type Marking: BCV27 (FFs), BCV47 (FGs)RoHS Compliant: YesTechnical SpecificationsParameterSymbolBC
High voltage power transistor Jilin Sino-Microelectronics 3DD13005ED NPN transistor for switching power supplies
Product OverviewThe 3DD13005ED is a high voltage, fast-switching NPN power transistor designed for various power applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, making it suitable for energy-saving lights, electronic ballasts, high-frequency switching power supplies, and general power amplifier circuits. This product is RoHS compliant.Product AttributesBrand: Jilin Sino-microelectronics Co., LtdCertification
High Current Gain PNP Silicon AF Transistor Infineon BC857BE6327HTSA1 Suitable for Audio Frequency Applications
Product OverviewThe BC856...-BC860... series are PNP Silicon AF Transistors designed for AF input stages and driver applications. They offer high current gain, low collector-emitter saturation voltage, and low noise characteristics between 30 Hz and 15 kHz. These transistors are Pb-free and RoHS compliant, qualified according to AEC Q101.Product AttributesBrand: Infineon TechnologiesMaterial: SiliconCertifications: AEC Q101, Pb-free (RoHS compliant)Technical SpecificationsTyp
High Collector Emitter Voltage ISC 2SC4552 Silicon NPN Power Transistor for Driver Circuit Solutions
ISC Silicon NPN Power Transistor 2SC4552The 2SC4552 is an NPN power transistor designed for driver applications in DC/DC converters and actuators. It features a high collector-emitter sustaining voltage of 60V (Min), high DC current gain (hFE=100 Min @ VCE=2V, IC=3A), and low saturation voltage (VCE(sat)=0.3V Max @ IC=8A, IB=0.4A). Its robust device performance and reliable operation are ensured by minimum lot-to-lot variations.Product AttributesBrand: ISCTrademark: ISC &
High Current Silicon NPN Power Transistor ISC 2SC3709A with Low Collector Saturation Voltage Feature
ISC Silicon NPN Power Transistor 2SC3709AThe ISC 2SC3709A is a Silicon NPN Power Transistor designed for high current switching applications. It features a low collector saturation voltage (VCE(sat)= 0.4V(Max)@IC= 6A) and good linearity of hFE. This transistor is a complement to the 2SA1451A type.Product AttributesBrand: ISCRegistered Trademark: ISC & ISCsemiMaterial: SiliconType: NPN Power TransistorComplementary Type: 2SA1451ATechnical SpecificationsParameterConditionsMinTy
Wireless network connectivity improvement using Infineon BFP620H7764 RF transistor for mobile systems
Infineon RF TransistorsInfineon's RF transistors offer robust, flexible, and reliable solutions for complementary wireless applications. They are designed to enhance system sensitivity, improve interference immunity, and ensure stable signal reception and transmission across multiple or specific bands. These transistors are crucial for enabling universal network availability and connectivity in an increasingly mobile society, supporting the growing demand for data traffic in
Industrial grade Infineon BFP740FESDH6327XTSA1 NPN RF transistor featuring 21 dBm RF input power and 2 kV ESD protection
Product OverviewThe BFP740FESD is a wideband NPN RF heterojunction bipolar transistor (HBT) featuring integrated ESD protection. It offers a unique combination of high RF performance and robustness, with a maximum RF input power of 21 dBm and 2 kV ESD robustness (HBM). This transistor is qualified for industrial applications and is suitable for various wireless communication systems, satellite communication, multimedia applications, and ISM applications.Product AttributesBran
NPN Digital Transistor Infineon BCR129SE6327 Suitable for Switching and Inverter Circuit Applications
Product OverviewThe BCR129 is an NPN Silicon Digital Transistor designed for switching circuits, inverters, interface circuits, and driver circuits. It features a built-in bias resistor (R1=10 k). The BCR129S variant offers two internally isolated transistors with good matching in a multichip package. All packages are Pb-free (RoHS compliant) and qualified according to AEC Q101.Product AttributesBrand: Infineon TechnologiesCertifications: AEC Q101, RoHS compliantTechnical
Silicon npn rf bipolar transistor Infineon BFR360FH6327XTSA1 offering high gain and low noise for rf
Product OverviewThe BFR360F is a low-noise, low-current, and low-voltage silicon NPN RF bipolar transistor from Infineon's third-generation RF bipolar transistor family. It is designed for low current amplifiers and offers cost competitiveness with ease of use. Its key features include a minimum noise figure of 1 dB at 1.8 GHz, high gain, and a high OIP3, making it suitable for applications like LNAs for FM/AM radio and sub-1 GHz ISM band applications.Product AttributesBrand:
