Single Bipolar Transistors

Product OverviewThe BFQ790 is a high-linearity, high-gain driver amplifier designed for RF applications. Built on NPN silicon germanium technology, it offers excellent performance characteristics suitable for commercial and industrial wireless infrastructure, ISM band amplifiers, automated test equipment, and broadcasting systems.Product AttributesBrand: InfineonOrigin: Not specifiedMaterial: NPN Silicon GermaniumColor: Not specifiedCertifications: Qualified for industrial

Product OverviewThe BFP540FESD is a low-noise silicon bipolar RF transistor designed for ESD-protected high-gain low-noise amplifiers. It offers excellent ESD performance with a typical value of 1000 V (HBM) and outstanding Gms of 20 dB with a minimum noise figure (NFmin) of 0.9 dB. This Pb-free, halogen-free, and RoHS-compliant component is available in a thin small flat package with visible leads and has an AEC-Q101 qualification report available. Observe handling

Product OverviewThe 3DD4243D is a high voltage, fast-switching NPN power transistor designed for various power applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, making it suitable for energy-saving lights, electronic ballasts, high-frequency switching power supplies, high-frequency power transformers, and general power amplifier circuits. This product is RoHS compliant.Product AttributesBrand: Jilin Sino

Product OverviewThe BFR182W is a low-noise silicon bipolar RF transistor designed for high-gain broadband amplifiers. It operates effectively at collector currents ranging from 1 mA to 20 mA, offering a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. This component is available in a Pb-free and halogen-free package with visible leads, and a qualification report according to AEC-Q101 is available. It is an ESD-sensitive device and

Product OverviewThe 3DD13003A is a high voltage, fast-switching NPN power transistor designed for various power applications. It offers high breakdown voltage, high current capability, and high switching speed, making it suitable for chargers, electronic ballasts, high-frequency switching power supplies, and general power amplifier circuits. This RoHS-compliant product ensures high reliability.Product AttributesBrand: Jilin Sino-microelectronics Co., Ltd.Certifications:

Product OverviewThe BFR193W is a low-noise silicon bipolar RF transistor designed for high-gain amplifiers up to 2 GHz and linear broadband amplifiers. It features a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 1 dB at 900 MHz. This Pb-free (RoHS compliant) component is available with an AEC-Q101 qualification report. It is an ESD sensitive device and requires careful handling.Product AttributesBrand: Infineon TechnologiesModel: BFR193WPackage:

Product OverviewThe BFP193W is a low-noise silicon bipolar RF transistor designed for high-gain and linear broadband amplifiers up to 2 GHz. It features a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 1 dB at 900 MHz. This Pb-free (RoHS compliant) component is available with an AEC-Q101 qualification report. It is an ESD-sensitive device and requires careful handling.Product AttributesBrand: Infineon TechnologiesPackage: SOT343Certifications: AEC

Product OverviewThe 3DD13007MD is a high voltage, fast-switching NPN power transistor designed for various electronic applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, making it suitable for energy-saving lights, electronic ballasts, high-frequency switching power supplies, and general power amplification circuits. This product is RoHS compliant.Product AttributesBrand: Jilin Sino-microelectronics Co., Ltd

Infineon TC36x AA-Step 32-Bit Single-Chip Microcontroller The TC36x AA-Step is a 32-bit single-chip microcontroller designed for open market applications. It offers advanced features and robust performance for a wide range of embedded systems. Product Attributes Brand: Infineon Technologies AG Product Line: AURIX Edition: 2021-03 Version: V 1.1 Technical Specifications Section Description Page Summary of Features Overview of key features 7 Pin Definition and Functions

Product OverviewThe 3DD4613H is a high voltage, fast-switching NPN power transistor designed for various power applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, making it suitable for battery chargers, electronic ballasts, high-frequency switching power supplies, and general power amplifier circuits. This product is RoHS compliant.Product AttributesBrand: Jilin Sino-microelectronics Co., Ltd.Certifications:

Product OverviewThe BCR22PN is an NPN/PNP Silicon Digital Transistor Array designed for switching circuits, inverters, interface circuits, and driver circuits. It features two internally isolated NPN and PNP transistors within a single package, each with built-in bias resistors (R1=22 k, R2=22 k). This Pb-free (RoHS compliant) and AEC Q101 qualified component offers a compact SOT363 package.Product AttributesBrand: Infineon TechnologiesMaterial: SiliconCertifications: AEC

Infineon RF Transistors - 7th & 8th Generation Infineon's 7th and 8th generation RF transistors are discrete Heterojunction Bipolar Transistors (HBT) designed for complementary wireless solutions, offering robust, flexible, and reliable performance. These devices are crucial for enabling stable and reliable wireless reception and transmission across multiple bands, supporting the increasing demand for universal network availability and connectivity. They are particularly

Product OverviewThe BCR135 is a NPN Silicon Digital Transistor designed for switching circuits, inverters, interface circuits, and driver circuits. It features built-in bias resistors (R1=10 k, R2=47 k). The BCR135S variant offers two internally isolated transistors with good matching in a single multichip package. These components are Pb-free (RoHS compliant) and qualified according to AEC Q101.Product AttributesBrand: Infineon TechnologiesMaterial: SiliconCertifications:

Product OverviewThe BFP193 is a low-noise silicon bipolar RF transistor designed for high-gain and linear broadband amplifiers up to 2 GHz. It offers excellent performance with a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 1 dB at 900 MHz. This component is Pb-free and RoHS compliant, with qualification reports available according to AEC-Q101. It is ESD sensitive and requires careful handling.Product AttributesBrand: Infineon TechnologiesPackage:

Product OverviewThe ISC BD678 is a Silicon PNP Darlington Power Transistor designed for use as output devices in complementary general-purpose amplifier applications. It offers a Collector-Emitter Breakdown Voltage of -60V and a minimum DC Current Gain (hFE) of 750 @ IC= -1.5 A. This transistor is a complement to the BD677 type.Product AttributesBrand: ISCTrademark: ISC & ISCsemiMaterial: SiliconTechnical SpecificationsSymbolParameterConditionsValueUnitV(BR)CEOCollector

ISC Silicon PNP Power Transistor 2SA940The 2SA940 is a PNP power transistor designed for general-purpose power amplifier and vertical output applications. It offers a high collector-emitter breakdown voltage of -150V and a DC current gain ranging from 40 to 140 at -0.5A. This transistor is a complement to the 2SC2073 type, ensuring robust device performance and reliable operation with minimal lot-to-lot variations.Product AttributesBrand: ISCTrademark: ISC & ISCsemiMaterial:

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 3DD4617H The 3DD4617H is a high voltage, fast-switching NPN power transistor designed for various electronic applications. It offers robust performance with high voltage and current capabilities. Product Attributes Brand: Jilin Sino-microelectronics Co., Ltd Origin: China Certifications: Halogen-Free options available Technical Specifications Order Code Marking Package Halogen-Reel Halogen-Free-Reel Halogen-Bag Halogen-Free-Bag

Product OverviewThe BFR193 is a low-noise silicon bipolar RF transistor designed for high-gain amplifiers up to 2 GHz and linear broadband amplifiers. It offers a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 1 dB at 900 MHz. This device is Pb-free (RoHS compliant) and has an AEC-Q101 qualification report available. It is an ESD-sensitive device requiring careful handling.Product AttributesBrand: Infineon TechnologiesPackage: SOT23Certifications:

Product OverviewThe BFR106 is a low-noise silicon bipolar RF transistor designed for UHF/VHF applications. It offers high linearity with 22 dBm OP1dB and 31 dBm OIP3 @ 900 MHz, making it suitable as a driver for multistage amplifiers and for linear broadband and antenna amplifiers. The collector design supports a 5 V supply voltage, and it comes in a Pb-free (RoHS compliant) SOT23 package. Qualification is available according to AEC-Q101.Product AttributesBrand: Infineon

Product OverviewThe BCR129 is an NPN Silicon Digital Transistor designed for switching circuits, inverters, interface circuits, and driver circuits. It features a built-in bias resistor (R1=10 k). The BCR129S variant offers two internally isolated transistors with good matching in a multichip package. All packages are Pb-free (RoHS compliant) and qualified according to AEC Q101.Product AttributesBrand: Infineon TechnologiesMaterial: SiliconCertifications: AEC Q101, RoHS