Single Bipolar Transistors
Silicon Digital Transistor Infineon BCR146T E6327 for in Switching and Inverter Circuit Applications
NPN Silicon Digital Transistor - BCR146 Series The BCR146 is an NPN silicon digital transistor designed for switching circuits, inverters, interface circuits, and driver circuits. It features built-in bias resistors (R1=47k, R2=22k) for simplified circuit design. Product Attributes Brand: Infineon Technologies Material: Silicon Technical Specifications Type Marking Pin Configuration Package VCEO (V) VCBO (V) VEBO (V) Vi(on) (V) IC (mA) Ptot (mW) Tj (C) Tstg (C) RthJS (K/W) V
high voltage transistor Jilin Sino Microelectronics 3DD4613H 92 FJ suitable for chargers and ballasts
Product Overview The 3DD4613H is a high voltage, fast-switching NPN power transistor designed for various power applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, making it suitable for chargers, electronic ballasts, high-frequency switching power supplies, and general power amplification circuits. This product is RoHS compliant. Product Attributes Brand: Jilin Sino-microelectronics Co., Ltd Certifications:
Power transistor Jilin Sino Microelectronics 3DD4243DT 92 with high switching speed and breakdown voltage
Product OverviewThe 3DD4243D is a high voltage, fast-switching NPN power transistor designed for various electronic applications. It offers high breakdown voltage, high current capability, and high switching speed, making it suitable for energy-saving lights, electronic ballasts, high-frequency switching power supplies, and general power amplification circuits. This product is RoHS compliant.Product AttributesBrand: Jilin Sino-microelectronics Co., Ltd.Certifications:
High reliability transistor array Infineon BCR22PNH6433 with dual NPN PNP transistors and RoHS compliance
Product OverviewThe BCR22PN is a high-performance NPN/PNP silicon digital transistor array designed for various switching, inverter, interface, and driver circuit applications. This device features two internally isolated NPN and PNP transistors within a single package, simplifying circuit design. It includes built-in bias resistors (R1=22 k, R2=22 k) and is Pb-free (RoHS compliant), meeting AEC Q101 qualification standards.Product AttributesBrand: Infineon TechnologiesCertif
PNP Silicon Digital Transistor Infineon BCR 198 E6327 for Interface and Driver Circuit Applications
Product OverviewThe BCR198 is a PNP Silicon Digital Transistor designed for switching circuits, inverters, interface circuits, and driver circuits. It features built-in bias resistors (R1 = 47 k, R2 = 47 k). The BCR198S variant offers two internally isolated transistors with good matching in a single multichip package and is suitable for orientation in reels as per package information. All variants are Pb-free (RoHS compliant) and qualified according to AEC Q101.Product
High gain broadband amplifier transistor Infineon BFP183WH6327XTSA1 low noise silicon bipolar device
Product OverviewThe BFP183W is a low-noise silicon bipolar RF transistor designed for high-gain broadband amplifiers. It operates at collector currents from 2 mA to 30 mA, offering a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. This device is Pb-free (RoHS compliant) and halogen-free, with qualification reports available according to AEC-Q101. It is an ESD-sensitive device and requires careful handling.Product AttributesBrand:
Silicon AF Transistor Infineon BCP5616H6327 NPN Type with Low Collector Emitter Saturation Voltage
BCP54...-BCP56... NPN Silicon AF TransistorsThese NPN Silicon AF Transistors are designed for AF driver and output stages. They offer high collector current and low collector-emitter saturation voltage. Complementary PNP types are available as BCP51...BCP53. The components are Pb-free and RoHS compliant, qualified according to AEC Q101.Product AttributesBrand: Infineon TechnologiesMaterial: SiliconCertifications: AEC Q101Package: SOT223Compliance: Pb-free (RoHS compliant
Silicon bipolar transistor Infineon BFR 181W H6327 low noise figure designed for broadband rf amplifier
Product OverviewThe BFR181W is a low-noise silicon bipolar RF transistor designed for high-gain broadband amplifiers. It is suitable for collector currents ranging from 0.5 mA to 12 mA, offering a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. This transistor is provided in an industry-standard, easy-to-use, Pb-free (RoHS compliant) and halogen-free package with visible leads. Qualification reports according to AEC-Q101 are
Silicon PNP Transistor Array Infineon BC856S E6433 with Low Saturation Voltage and High Current Gain
Product OverviewThe BC856S/U and BC857S are PNP Silicon AF Transistor Arrays designed for AF input stages and driver applications. They offer high current gain, low collector-emitter saturation voltage, and feature two internally isolated transistors with good matching in a single package. These devices are Pb-free (RoHS compliant) and qualified according to AEC Q101.Product AttributesBrand: Infineon TechnologiesMaterial: SiliconCertifications: AEC Q101, Pb-free (RoHS
NPN Transistor Infineon MMBT3904LT1HTSA1 Featuring Pb Free RoHS Compliance and AEC Q101 Certification
Product OverviewThe SMBT3904/MMBT3904 and SMBT3904S are NPN silicon switching transistors designed for high DC current gain from 0.1 mA to 100 mA. They feature a low collector-emitter saturation voltage and are Pb-free (RoHS compliant) and qualified according to AEC Q101. The SMBT3904S variant offers two internally isolated transistors with good matching in a single package, suitable for applications requiring dual transistor functionality.Product AttributesBrand: Infineon
Low noise figure RF transistor Infineon BFP196E6327HTSA1 designed for DECT PCN power amplifiers and broadband
Product OverviewThe BFP196 is a low-noise silicon bipolar RF transistor designed for low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz. It is also suitable as a power amplifier for DECT and PCN systems. Key features include a high transition frequency (fT) of 7.5 GHz and a minimum noise figure (NFmin) of 1.3 dB at 900 MHz. This component is Pb-free (RoHS compliant) and has an AEC-Q101 qualification report available. It is
Silicon PNP Digital Transistors Infineon BCR169S featuring RoHS compliance and AEC Q101 qualification
Product OverviewThe BCR169 series are PNP Silicon Digital Transistors designed for switching circuits, inverters, interface circuits, and driver circuits. They feature built-in bias resistors (R1 = 4.7 k) for simplified design. The BCR169S variant offers two internally isolated transistors with good matching in a single multichip package, ideal for orientation in reel as per package information. These components are Pb-free (RoHS compliant) and qualified according to AEC Q101
PNP Silicon Digital Transistor with Built-in Bias Resistors and SOT23 Package Infineon BCR553E6327HTSA1
Product OverviewThe BCR553 is a PNP Silicon Digital Transistor featuring built-in bias resistors (R1= 2.2 k, R2= 2.2 k). It is Pb-free (RoHS compliant) and qualified according to AEC Q101. This transistor is designed for various digital applications requiring integrated biasing.Product AttributesBrand: Infineon TechnologiesPackage: SOT23Certifications: AEC Q101, RoHS compliantType Marking: XBsTechnical SpecificationsParameterSymbolValueUnitNotesMaximum RatingsCollector
Dual transistor low noise RF device Infineon BFS481H6327XTSA1 in Pb free halogen free SOT363 package
Product OverviewThe BFS481 is a low-noise silicon bipolar RF transistor designed for low-noise, high-gain broadband amplifiers. It features two internally isolated transistors in a single package, offering fT of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. This device is suitable for collector currents ranging from 0.5 mA to 12 mA and is provided in an industry-standard, Pb-free (RoHS compliant) and halogen-free SOT363 package with visible leads, making it
NPN Silicon Digital Transistor Infineon BCR141SE6327 with RoHS Compliance and AEC Q101 Certification
Product OverviewThe BCR141 is a NPN Silicon Digital Transistor designed for switching circuits, inverters, interface circuits, and driver circuits. It features built-in bias resistors (R1=22k, R2=22k). The BCR141S variant offers two internally isolated transistors with good matching in a single multichip package and is suitable for orientation in reels. All packages are Pb-free (RoHS compliant) and qualified according to AEC Q101.Product AttributesBrand: Infineon Technologies
Switching Circuit Transistor Array Infineon BCR08PNH6327XTSA1 with NPN PNP Silicon Digital Transistors
Product OverviewThe BCR08PN is a NPN/PNP Silicon Digital Transistor Array designed for switching circuits, inverters, interface circuits, and driver circuits. It features two internally isolated NPN and PNP transistors within a single package, each with built-in bias resistors (R1=2.2 k, R2=47 k). This Pb-free (RoHS compliant) and AEC Q101 qualified component offers a compact solution for various electronic applications.Product AttributesBrand: Infineon TechnologiesPackage:
Power Transistor Jilin Sino Microelectronics 3DD209L 3PB RoHS Compliant for High Frequency Circuits
Product OverviewThe 3DD209L is a high voltage, fast-switching NPN power transistor designed for various power applications. It offers high breakdown voltage, high current capability, and high switching speed, making it suitable for energy-saving lights, electronic ballasts, high-frequency switching power supplies, and general power amplification circuits. This product is RoHS compliant and offers high reliability.Product AttributesBrand: Jilin Sino-microelectronics Co.,
Low Noise Silicon Germanium Bipolar RF Transistor Infineon BFP740FH6327 Suitable for RF Applications
BFP740F Low Noise Silicon Germanium Bipolar RF TransistorThe BFP740F is a low noise silicon germanium bipolar RF transistor designed for high-frequency applications. It offers excellent performance characteristics suitable for various RF circuits.Product AttributesBrand: Infineon TechnologiesMaterial: Silicon GermaniumOrigin: GermanyTechnical SpecificationsFeatureDescriptionValueConditionsFrequencyPageProduct TypeLow Noise RF TransistorBFP740FTechnologySilicon Germanium
High gain broadband amplifier transistor Infineon BFR182E6327 silicon bipolar with low noise figure
Product OverviewThe BFR182 is a low-noise silicon bipolar RF transistor designed for high-gain broadband amplifiers. It is suitable for collector currents ranging from 1 mA to 20 mA, offering a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. This component is Pb-free (RoHS compliant) and a qualification report according to AEC-Q101 is available. It is an ESD sensitive device and requires careful handling.Product AttributesBrand:
Silicon NPN Transistor Array Infineon BC846PNH6327 with High Current Gain and Low Saturation Voltage
Product OverviewThe BC846PN/UPN_BC847PN series are NPN/PNP Silicon AF Transistor Arrays designed for AF input stage and driver applications. They offer high current gain, low collector-emitter saturation voltage, and feature two internally isolated NPN/PNP transistors in a single package. These devices are Pb-free (RoHS compliant) and qualified according to AEC Q101.Product AttributesBrand: Infineon TechnologiesMaterial: SiliconCertifications: AEC Q101, RoHS compliantTechnica
