Single Bipolar Transistors

Product OverviewThe BFS17W is a NPN Silicon RF Transistor designed for broadband amplifiers up to 1 GHz. It operates at collector currents ranging from 1 mA to 20 mA and comes in a Pb-free (RoHS compliant) package. This device is ESD sensitive and requires careful handling.Product AttributesBrand: Infineon TechnologiesPackage Type: SOT323Certifications: Pb-free (RoHS compliant)Technical SpecificationsParameterSymbolValueUnitNotesMaximum RatingsCollector-emitter voltageVCEO15V

Product OverviewThe MMBTA05LT1 and MMBTA06LT1 are NPN silicon driver transistors designed for general-purpose applications. They are available in Pb-Free packages, offering an environmentally conscious choice. These devices are suitable for various driving applications where reliable NPN transistor performance is required.Product AttributesBrand: onsemi (Semiconductor Components Industries, LLC)Certifications: PbFree Packages AvailableTechnical SpecificationsCharacteristicSym

Product OverviewThe 2SC4793 is a Silicon NPN Power Transistor from ISC, featuring a high Collector-Emitter Breakdown Voltage of 230V (Min) and a high Current-Gain Bandwidth Product. It is designed as a complement to the 2SA1837 and offers minimum lot-to-lot variations for robust device performance. This transistor is suitable for power amplifier and driver stage amplifier applications.Product AttributesBrand: ISCTrademark: ISC & ISCsemiMaterial: SiliconType: NPN Power

Product OverviewThe BFP650F is a low-profile NPN RF bipolar transistor built on SiGe:C technology, belonging to Infineon's sixth-generation transistor family. It offers a high transition frequency (fT) of 42 GHz and excellent linearity, making it suitable for oscillator applications. This device provides a cost-effective solution without compromising ease of use.Product AttributesBrand: InfineonTechnology: SiGe:CProduct Family: Sixth Generation RF TransistorsCertifications:

Product OverviewThe BFP181 is a low-noise silicon bipolar RF transistor designed for low-noise, high-gain broadband amplifiers. It operates at collector currents from 0.5 mA to 12 mA and features a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. This Pb-free (RoHS compliant) component is available with qualification reports according to AEC-Q101 and is ESD sensitive, requiring careful handling.Product AttributesBrand: Infineon

ISC Silicon NPN Power Transistor 2N4923The ISC 2N4923 is a Silicon NPN Power Transistor designed for driver circuits, switching, and amplifier applications. It features a Collector-Emitter Sustaining Voltage of 80V (Min), a low Collector Saturation Voltage of 0.6V (Max.) at IC=1A, and a wide Area of Safe Operation. It is a complement to the 2N4920 type, offering minimum lot-to-lot variations for robust device performance and reliable operation.Product AttributesBrand:

Product OverviewThe 2SA1869 is a Silicon PNP Power Transistor from ISC, designed for power amplifier applications. It features a collector-emitter breakdown voltage of -50V, good linearity of hFE, and is a complement to type 2SC4935. Its robust device performance and reliable operation are ensured by minimum lot-to-lot variations.Product AttributesBrand: ISCTrademark: ISC & ISCsemiMaterial: SiliconType: PNP Power TransistorTechnical SpecificationsSymbolParameterConditionsMinT

Product OverviewThe SMBTA42/MMBTA42 are NPN Silicon High-Voltage Transistors designed for various applications. They offer a low collector-emitter saturation voltage and are Pb-free (RoHS compliant). Complementary PNP types, SMBTA92/MMBTA92, are also available. These transistors are qualified according to AEC Q101 standards.Product AttributesBrand: Infineon TechnologiesPackage: SOT23Certifications: AEC Q101, Pb-free (RoHS compliant)Type Marking: s1DComplementary Types:

Product OverviewThe BFQ19S is a low-noise silicon bipolar RF transistor designed for low-noise, low-distortion broadband amplifiers. It is suitable for antenna and telecommunications systems operating up to 1.5 GHz with collector currents ranging from 10 mA to 70 mA. This transistor is Pb-free and RoHS compliant, with qualification reports available according to AEC-Q101.Product AttributesBrand: Infineon TechnologiesPackage: SOT89Certifications: AEC-Q101 (Qualification report

Product OverviewThe ISC 2N6039 is a Silicon NPN Darlington Power Transistor designed for general-purpose switching and amplifier applications. It features a high DC current gain of 750(Min)@IC=2A and a Collector-Emitter Sustaining Voltage of 80V(Min). It is a complement to the 2N6036 type.Product AttributesBrand: ISCTrademark: ISC & ISCsemiMaterial: SiliconTechnical SpecificationsSymbolParameterConditionsMinMaxUnitVCEO(SUS)Collector-Emitter Sustaining VoltageIC= 50mA; IB=

Product OverviewThe Inchange Semiconductor 2SC3858 is a Silicon NPN Power Transistor designed for audio and general-purpose applications. It features the MT-200 package and is a complement to the 2SA1494 type.Product AttributesBrand: Inchange SemiconductorProduct Type: Silicon NPN Power TransistorPackage: MT-200Complementary Type: 2SA1494Technical SpecificationsSymbolParameterConditionsValueUnitAbsolute Maximum RatingsVCBOCollector-base voltageOpen emitter200VVCEOCollector

Product OverviewThe BFR92P is a low-noise silicon bipolar RF transistor designed for broadband amplifiers up to 2 GHz and fast non-saturated switches. It operates with collector currents ranging from 0.5 mA to 20 mA. This device is Pb-free, RoHS compliant, and has an AEC-Q101 qualification report available. It is an ESD-sensitive device and requires careful handling.Product AttributesBrand: Infineon TechnologiesPackage: SOT23Certifications: AEC-Q101Compliance: Pb-free (RoHS

Product OverviewThe BFP740ESD is a wideband NPN RF heterojunction bipolar transistor (HBT) featuring integrated ESD protection. It offers a unique combination of high-end RF performance and robustness, including a maximum RF input power of 21 dBm and 2 kV ESD robustness (HBM). This device is qualified for industrial applications and is suitable for a wide range of wireless communication, satellite communication, multimedia, and ISM applications.Product AttributesBrand:

Product OverviewThe BCR183 is a PNP Silicon Digital Transistor designed for switching, inverter, interface, and driver circuits. It features built-in bias resistors (R1 = 10 k, R2 = 10 k). The BCR183S/U variants offer two internally isolated transistors with good matching in a single multichip package, ideal for reel orientation. These components are Pb-free (RoHS compliant) and qualified according to AEC Q101.Product AttributesBrand: Infineon TechnologiesMaterial: SiliconCer

Product OverviewThe BUX98A is a Silicon NPN Power Transistor designed for high voltage and high current applications. It offers fast switching speeds and minimal lot-to-lot variations, ensuring robust device performance and reliable operation. This transistor is suitable for use in high frequency and efficiency converters, as well as linear and switching industrial equipment.Product AttributesBrand: ISCTrademark: ISC & ISCsemiMaterial: SiliconType: NPN Power TransistorTechnic

Product OverviewThe 3DD5023P is a high breakdown voltage NPN bipolar transistor designed for low-frequency applications, specifically for the horizontal deflection output circuit in color televisions. Manufactured using advanced techniques like high-voltage planar process and triple diffusion, it features a fully plastic package and is RoHS compliant.Product AttributesBrand: Jilin Sino-microelectronics Co., Ltd.Certifications: RoHSTechnical SpecificationsOrder CodeMarkingPack

Product OverviewThe BFP196W is a low-noise silicon bipolar RF transistor designed for low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz. It is also suitable as a power amplifier for DECT and PCN systems. This transistor offers a transition frequency (fT) of 7.5 GHz and a minimum noise figure (NFmin) of 1.3 dB at 900 MHz. It is available in a Pb-free (RoHS compliant) and halogen-free package with visible leads, and a

BFP650 High Linearity Silicon Germanium Bipolar RF TransistorThe BFP650 is a high linearity silicon germanium bipolar RF transistor designed for RF and protection device applications. This datasheet provides detailed technical specifications, maximum ratings, thermal characteristics, and electrical characteristics, including DC and AC parameters, along with characteristic diagrams and simulation data. The product is supplied in a SOT343 package.Product AttributesBrand:

Product OverviewThe INCHANGE Semiconductor BU406 is a silicon NPN power transistor designed for high-voltage applications. It features a high collector-emitter voltage (VCEV= 400V Min), fast switching speed (tf= 750ns Max), and low saturation voltage (VCE(sat)= 1.0V Max @ IC= 5A). This transistor is specifically designed for use in horizontal deflection output stages of TVs and CRTs.Product AttributesBrand: INCHANGE SemiconductorProduct Type: Silicon NPN Power TransistorModel

Product OverviewThe BFP640ESD is a robust silicon NPN RF bipolar transistor from Infineon's sixth generation transistor family, utilizing SiGe:C technology. It offers high RF gain, low noise figure, and excellent ESD robustness, making it suitable for a wide range of wireless applications. This device provides a cost-competitive solution without compromising ease of use.Product AttributesBrand: InfineonMaterial: SiGe:C technologyCertifications: Qualified for industrial