Single Bipolar Transistors

Product OverviewThe BFR193L3 is an NPN Bipolar RF Transistor designed for low noise, high-gain amplifiers up to 2 GHz and linear broadband amplifiers. It features a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 1 dB at 900 MHz. This device is Pb-free (RoHS compliant) and has an AEC-Q101 qualification report available. It is an ESD sensitive device and requires careful handling.Product AttributesBrand: Infineon TechnologiesCertifications: RoHS

Product OverviewThe BCM846S is a silicon NPN bipolar transistor array designed for current mirror applications. It features a precision-matched transistor pair with a collector current difference of less than or equal to 10%, low collector-emitter saturation voltage, and two internally isolated transistors. This device is Pb-free and RoHS compliant, qualified according to AEC Q101 standards.Product AttributesBrand: Infineon TechnologiesComplementary Type: BCM856SMaterial:

BCR108 Series NPN Silicon Digital TransistorThe BCR108 series are NPN silicon digital transistors designed for switching circuits, inverters, interface circuits, and driver circuits. They feature built-in bias resistors (R1=2.2 k, R2=47 k). The BCR108S variant offers two internally isolated transistors with good matching in a single multichip package, suitable for orientation in reels. These components are Pb-free (RoHS compliant) and qualified according to AEC Q101 standards

Product OverviewThe 3DD4612DT/M is a high voltage, fast-switching NPN power transistor designed for various electronic applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, making it suitable for chargers, electronic ballasts, high-frequency switching power supplies, and general power amplification circuits. This product is RoHS compliant.Product AttributesBrand: Jilin Sino-microelectronics Co., Ltd.Origin:

Product OverviewThe BCX54-BCX56 series are NPN Silicon AF Transistors designed for AF driver and output stages. They offer high collector current, low collector-emitter saturation voltage, and are complementary to BCX51-BCX53 (PNP) series. These transistors are Pb-free (RoHS compliant) and qualified according to AEC Q101.Product AttributesBrand: Infineon TechnologiesMaterial: SiliconCertifications: AEC Q101, RoHS compliantTechnical SpecificationsTypeType MarkingVCEO (V)VCBO

Product OverviewThe BCR183 is a PNP Silicon Digital Transistor designed for switching circuits, inverters, interface circuits, and driver circuits. It features built-in bias resistors (R1 = 10 k, R2 = 10 k). The BCR183S/U variants offer two internally isolated transistors with good matching in a single multichip package, suitable for reel orientation. These components are Pb-free (RoHS compliant) and qualified according to AEC Q101.Product AttributesBrand: Infineon Technologi

Product Overview The BFR183 is a low-noise silicon bipolar RF transistor designed for high-gain broadband amplifiers. It operates at collector currents ranging from 2 mA to 30 mA, offering a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. This device is Pb-free, RoHS compliant, and a qualification report according to AEC-Q101 is available. It is an ESD-sensitive device and requires careful handling. Product Attributes Brand:

Product OverviewThe BCR133 is an NPN Silicon Digital Transistor designed for switching, inverter, interface, and drive circuits. It features built-in bias resistors (R1 = 10 k, R2 = 10 k). The BCR133S variant offers two internally isolated transistors with good matching in a single multichip package and is suitable for reel orientation as per package information. These components are Pb-free (RoHS compliant) and qualified according to AEC Q101.Product AttributesBrand:

Product OverviewThe TC36x AA-Step is a 32-bit single-chip microcontroller designed for open market applications. This document provides detailed technical specifications, pin definitions, and electrical characteristics for various package variants.Product AttributesBrand: Infineon Technologies AGOrigin: GermanyEdition: 2021-03Version: V 1.1Technical SpecificationsSectionDescriptionPageSummary of FeaturesOverall feature summary7TC36x Pin Definition and FunctionsDetailed pin

Product OverviewThe BCR148 is a NPN Silicon Digital Transistor designed for switching circuits, inverters, interface circuits, and driver circuits. It features built-in bias resistors (R1=47 k, R2=47 k). The BCR148S variant offers two internally isolated transistors with good matching in a single multichip package. All packages are Pb-free (RoHS compliant) and qualified according to AEC Q101.Product AttributesBrand: Infineon TechnologiesCertifications: AEC Q101, RoHS

Product OverviewThe BCR166 is a PNP Silicon Digital Transistor designed for switching circuits, inverters, interface circuits, and driver circuits. It features built-in bias resistors (R1 = 4.7 k, R2 = 47 k) and is Pb-free, complying with RoHS standards. This component is qualified according to AEC Q101.Product AttributesBrand: Infineon TechnologiesCertifications: AEC Q101, RoHS compliantPackage Types: SOT23, SOT323Technical SpecificationsParameterSymbolBCR166 (SOT23)BCR166W

Product OverviewThe BFP620 is a surface mount, high linearity silicon NPN RF bipolar transistor utilizing SiGe:C technology. As part of Infineon's sixth-generation transistor family, it offers excellent linearity and collector design, making it suitable for a wide range of wireless applications. This device provides cost competitiveness without compromising ease of use.Product AttributesBrand: InfineonTechnology: SiGe:CProduct Family: Sixth Generation RF TransistorCertificati

Infineon RF TransistorsInfineon's RF transistors offer robust, flexible, and reliable solutions for complementary wireless applications. They are designed to enhance system sensitivity, improve interference immunity, and ensure stable signal reception and transmission across multiple bands. With a focus on performance, versatility, supply security, and quality, these transistors are ideal for next-generation mobile systems, infrastructure, and automotive applications.Product

BFN27 PNP Silicon High-Voltage TransistorsThe BFN27 is a PNP silicon high-voltage transistor designed for video output stages in TV sets and switching power supplies. It offers a high breakdown voltage and a low collector-emitter saturation voltage. This transistor is Pb-free and RoHS compliant, qualified according to AEC Q101.Product AttributesBrand: Infineon TechnologiesComplementary Type: BFN26 (NPN)Package: SOT23Certifications: AEC Q101 Qualified, Pb-free (RoHS compliant

Product OverviewThe BCV27 and BCV47 are NPN Silicon Darlington Transistors designed for general AF applications. They offer high collector current, high current gain, and are available in Pb-free (RoHS compliant) SOT23 packages. These transistors are qualified according to AEC Q101 standards and have complementary PNP types (BCV26, BCV46).Product AttributesBrand: Infineon TechnologiesMaterial: SiliconPackage: SOT23Certifications: AEC Q101, RoHS compliantType Marking: BCV27

BFP640FESD Robust Low Noise Silicon Germanium Bipolar RF TransistorThe BFP640FESD is a robust, low-noise silicon germanium bipolar RF transistor designed for various RF applications. It offers excellent performance characteristics suitable for demanding RF circuitry.Product AttributesBrand: Infineon TechnologiesMaterial: Silicon Germanium (SiGe)Origin: Germany (Implied by publisher location)Technical SpecificationsParameterValueConditionsUnitMaximum RatingsCollector-Emitter

Product OverviewThe BFP405 is a low-noise silicon bipolar RF transistor designed for low current applications and oscillators up to 12 GHz. It offers a minimum noise figure (NFmin) of 1.25 dB at 1.8 GHz and an outstanding power gain (Gms) of 23 dB at 1.8 GHz. This device comes in a Pb-free (RoHS compliant) and halogen-free package with visible leads and is AEC-Q101 qualified.Product AttributesBrand: Infineon TechnologiesPackage: SOT343Certifications: AEC-Q101Material: Silicon

Product OverviewThe BCR108 is an NPN Silicon Digital Transistor designed for switching circuits, inverters, interface circuits, and driver circuits. It features built-in bias resistors (R1=2.2 k, R2=47 k). The BCR108S variant offers two internally isolated transistors with good matching in a single multichip package. All variants are Pb-free (RoHS compliant) and qualified according to AEC Q101.Product AttributesBrand: Infineon TechnologiesCertifications: AEC Q101, RoHS

NPN Silicon AF Transistor The BC817K/BC818K series are NPN silicon AF transistors designed for general AF applications. They offer high collector current, high current gain, and low collector-emitter saturation voltage. These transistors are Pb-free and RoHS compliant, qualified according to AEC Q101. Product Attributes Brand: Infineon Technologies Material: Silicon Certifications: AEC Q101, RoHS compliant Technical Specifications TypeMarkingPackageVCEO (V)VCBO (V)VEBO (V)IC

Product Overview The BFP410 is a low-noise silicon bipolar RF transistor designed for high-frequency applications. It is suitable for handheld devices, high-frequency oscillators such as DROs for LNBs, and ISM band applications including Automatic Meter Reading and Sensors. This device features a high transit frequency of 25 GHz and is available in a Pb-free and halogen-free package with visible leads. A qualification report according to AEC-Q101 is available. Handle with