Single Bipolar Transistors
HL Haolin Elec HN13003 TO-92 Plastic Encapsulated NPN Transistor with 450V Collector Emitter Voltage
Product OverviewThe HN13003 is a TO-92 plastic-encapsulated NPN transistor designed for various electronic applications. It offers a power dissipation of 1W at 25 ambient temperature and features high breakdown voltages.Product AttributesBrand: SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTDOrigin: ChinaPackage Type: TO-92Technical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitsCollector-Base VoltageVCBO700VCollector-Emitter VoltageVCEO450VEmitter-Base VoltageVEBO9
HL Haolin Elec HT13003 power switching NPN transistor in TO126C plastic package for electronic circuit
Product OverviewThe HT13003 (AFO) is an NPN bipolar transistor from SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD, designed for power switching applications. Encapsulated in a TO-126C plastic package, it offers robust performance for various electronic circuits.Product AttributesBrand: SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTDOrigin: ChinaPackage Type: TO-126CTechnical SpecificationsParameterSymbolTest ConditionsMINTYPMAXUnitsCollector-Base VoltageVCBO700VCollector
PNP Switching Transistor HL Haolin Elec MMBT4403 with Plastic Encapsulation in Compact SOT23 Package
Product OverviewThe MMBT4403 is a PNP switching transistor in a SOT-23 package, designed for general-purpose switching applications.Product AttributesBrand: SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTDOrigin: ShenzhenPackage Type: SOT-23Encapsulation: PlasticTechnical SpecificationsParameterSymbolTest ConditionsMinMaxUnitCollector-Base VoltageVCBO-40VCollector-Emitter VoltageVCEO-40VEmitter-Base VoltageVEBO-5VCollector Current (Continuous)IC-0.6ACollector Power Dissipation
HL Haolin Elec C945 GR T 2040 Plastic Encapsulated Transistor Designed for Electronic Amplification
Product Overview This document describes the TO-92 Plastic-Encapsulated Transistor (NPN) from SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD. It features excellent hFE linearity and low noise, making it a complementary part to the A733. This transistor is suitable for various electronic applications requiring reliable amplification and switching. Product Attributes Brand: SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD Origin: Not specified Material: Plastic-Encapsulated
High Voltage PNP Bipolar Junction Transistor HL Haolin Elec A92 in TO 92 Plastic Package for Circuit
Product OverviewThe A92 is a PNP bipolar junction transistor encapsulated in a TO-92 plastic package, designed for high voltage applications. It offers reliable performance for various electronic circuits.Product AttributesBrand: SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTDOrigin: ChinaPackage Type: TO-92 Plastic-EncapsulateTechnical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitCollector-Base VoltageVCBO-310VCollector-Emitter VoltageVCEO-305VEmitter-Base
HL Haolin Elec A94 PNP bipolar junction transistor with TO-92 package delivering voltage performance
Product OverviewThe A94 is a PNP bipolar junction transistor (BJT) housed in a TO-92 package. It features high breakdown voltage, making it suitable for various electronic applications requiring reliable voltage handling.Product AttributesBrand: SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTDOrigin: ChinaPackage: TO-92 Plastic-EncapsulateTransistor Type: PNPTechnical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitCollector-base breakdown voltageV(BR)CBOIC=-100A,IE=0
NPN Transistor HL Haolin Elec D965 800 1000 Plastic Encapsulate SOT 89 3L Package with High Current Capability
Product OverviewThis is a Plastic-Encapsulate NPN Transistor in a SOT-89-3L package. It features low collector-emitter saturation voltage, large collector power dissipation and current capabilities, and a mini power type package. Marked as D965.Product AttributesMarking: D965Package: SOT-89-3LMaterial: Plastic-EncapsulateType: Transistor (NPN)Technical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitCollector-base breakdown voltageV(BR)CBOIC=100A,IE=040VCollector
Low Frequency Power Amplifier HL Haolin Elec 2SB562 C PNP Bipolar Junction Transistor in TO92 Package
Product OverviewThe 2SB562 is a PNP bipolar junction transistor designed for low-frequency power amplifier applications. It offers a complementary pair with the 2SD468 and comes in a TO-92 package.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsSymbolTest ConditionsValueUnitV(BR)CBOIC=-10 µA,IE=0-25VV(BR)CEOIC=-1mA,IB=0-20VV(BR)EBOIE=-10 µA,IC=0-5VICBOVCB=-20V,IE=0-1
General purpose HL Haolin Elec C1815 HF NPN transistor suitable for multiple electronic applications
Product OverviewThe C1815 is an NPN bipolar junction transistor designed for general-purpose applications. It offers a good balance of performance characteristics suitable for various electronic circuits.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitCollector-Base VoltageVCBO60VCollector-Emitter VoltageVCEO50VEmitter-Base
NPN transistor High Diode MMBT3904 featuring 40 volts collector emitter voltage in small SOT23 package
Product OverviewThe MMBT3904 is a high diode semiconductor NPN transistor in a SOT-23 package. It offers a collector-emitter voltage of 40V and a collector current of 200mA, making it suitable for general-purpose amplification and switching applications.Product AttributesBrand: High Diode SemiconductorPackage: SOT-23Type: NPN TransistorComplementary to: MMBT3906Technical SpecificationsSymbolParameterTest ConditionsMinTypMaxUnitVCEOCollector-Emitter Voltage40VICCollector
Fast switching HL Haolin Elec HPBU406 NPN transistor with TO 220 3L package and Pb Free availability
HPBU406 TRANSISTOR (NPN) The HPBU406 is a high-voltage NPN transistor designed for applications requiring fast switching speeds and low saturation voltage. It features a maximum switching time (tf) of 750 ns and a low saturation voltage (VCE(sat)) of 1 V at 5 A. Pb-Free packages are available. Product Attributes Package Type: TO-220-3L Transistor Type: NPN Availability: Pb-Free Packages Available Technical Specifications Parameter Symbol Test Conditions Min Typ Max Unit
SOT223 NPN Transistor High Diode BCP56-10 Offering High Collector Current and Low Saturation Voltage
Product OverviewThe BCP54, BCP55, and BCP56 are high diode semiconductor transistors in a SOT-223 plastic-encapsulated package. They are designed for AF driver and output stages, offering high collector current, low collector-emitter saturation voltage, and complementary types (BCP51-BCP53). These NPN transistors are suitable for various electronic applications requiring reliable amplification and switching.Product AttributesBrand: High Diode SemiconductorPackage Type: SOT
SOT23 Package NPN Transistor High Diode MMBT2222A With Epitaxial Planar Die For General Applications
Product OverviewThe MMBT2222A is an NPN epitaxial planar die construction transistor designed for general-purpose applications. It offers a complementary PNP type, the MMBT2907A. This device is packaged in a SOT-23 package, making it suitable for surface mount applications.Product AttributesBrand: High Diode SemiconductorComplementary Type: MMBT2907A (PNP)Package: SOT-23Construction: Epitaxial planar dieMarking: 1PTechnical SpecificationsSymbolParameterTest ConditionsMinTypMa
Semiconductor PNP Transistor With High Diode S9012 Offering High Collector Current And SOT23 Package
Product OverviewThe S9012 is a high diode semiconductor transistor in a SOT-23 package. It is a PNP type transistor with high collector current capability and excellent hFE linearity. It is complementary to the S9013 transistor.Product AttributesBrand: High Diode SemiconductorPackage Type: SOT-23Transistor Type: PNPFeatures: High Collector Current, Complementary to S9013, Excellent hFE LinearityTechnical SpecificationsSymbolParameterValueUnitTest ConditionsMinTypMaxVCEOCollec
Durable High Diode SS8550 PNP transistor designed for general purpose electronic circuit integration
Product OverviewThe SS8550 is a complementary PNP transistor to the SS8050, designed for general-purpose applications. It features a SOT-23 plastic-encapsulated package and is suitable for various electronic circuits requiring amplification or switching.Product AttributesBrand: High Diode SemiconductorComplementary to: SS8050Package: SOT-23Technical SpecificationsSymbolParameterVCEBOVCEOVEBOICPCRJATjTstghFE RankhFE RangeSS8550General Characteristics-40 V-25 V-5 V-1.5 A300
Durable PNP transistor High Diode S8550 in SOT23 package designed for multiple electronic circuit uses
Product OverviewThe S8550 is a complementary PNP transistor to the S8050, designed for general-purpose applications. It features a SOT-23 plastic-encapsulated package, offering reliable performance for various electronic circuits.Product AttributesBrand: High Diode SemiconductorPackage Type: SOT-23Transistor Type: PNPComplementary to: S8050Technical SpecificationsSymbolParameterTest ConditionsMinMaxUnitV(BR)CBOCollector-base breakdown voltageIC = -100A, IE=0-40VV(BR
SOT23 packaged transistor High Diode MMBT5551 NPN type for medium power amplification and switching
MMBT5551 Transistor - NPN, SOT-23 The MMBT5551 is a high-performance NPN transistor in a SOT-23 package, designed for medium power amplification and switching applications. Its complementary to MMBT5401, offering reliable performance for various electronic circuits. Product Attributes Brand: High Diode Semiconductor Package: SOT-23 Classification: Plastic-Encapsulate Transistors Transistor Type: NPN Technical Specifications Parameter Symbol Test Conditions Min Typ Max Unit
semiconductor transistor High Diode S9013 NPN transistor with high collector current in SOT23 package
Product OverviewThe S9013 is a high diode semiconductor transistor in a SOT-23 package. It features high collector current, complementary to the S9012, and excellent hFE linearity. This NPN transistor is suitable for general-purpose applications requiring high collector current.Product AttributesBrand: High Diode SemiconductorPackage: SOT-23 Plastic-Encapsulate TransistorsType: NPN TransistorComplementary to: S9012Technical SpecificationsParameterSymbolTest ConditionsMinTypMa
Medium power transistor High Diode MMBT5401 NPN type in SOT23 package for switching and amplification
Product OverviewThe MMBT5401 is a high diode semiconductor transistor in a SOT-23 package. It is ideal for medium power amplification and switching applications. This NPN transistor is complementary to the MMBT5551.Product AttributesBrand: High Diode SemiconductorPackage Type: SOT-23Transistor Type: NPNClassification: Plastic-Encapsulate TransistorsComplementary to: MMBT5551Technical SpecificationsSymbolParameterTest ConditionsMinTypMaxUnitVCEOCollector-Emitter Voltage
SOT323 Digital Transistor Featuring High Diode DTC143ZUA With Built In Resistors And Negative Biasing
Product Overview The DTC143Z series are digital transistors featuring built-in bias resistors, simplifying inverter circuit configurations by eliminating the need for external input resistors. These devices utilize thin-film resistors with complete isolation, allowing for negative input biasing and minimizing parasitic effects. Their design facilitates easy operation by only requiring the setting of on/off conditions, making them ideal for various electronic designs. Product
