Single IGBTs
Collector Current 40 Amp HXY MOSFET MBQ40T120QESTH HXY IGBT with Improved Switching Characteristics
Product OverviewThe MBQ40T120QESTH is an Insulated Gate Bipolar Transistor (IGBT) utilizing advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction loss, improving switching characteristics, and increasing avalanche energy. It is designed for applications requiring high reliability and efficient power management.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: MBQ40T120QESTHTechnology: Trench and Field
High voltage insulated gate bipolar transistor HXY MOSFET NGTG35N65FL2WG-HXY with easy paralleling and low gate charge
Product OverviewThe NGTG35N65FL2WG is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It offers easy paralleling capability due to its positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, this device is suitable for UPS, EV-Charger, and Solar String Inverter applications.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDOrigin: Shenzhen
Infineon IGW40N60TP 600V IGBT featuring TRENCHSTOP technology low EMI and short tail current for converters
Product OverviewThe IGW40N60TP is a 600V DuoPack IGBT from Infineon's TRENCHSTOPTM Performance series. It utilizes TRENCHSTOPTM technology, offering very low VCEsat, low turn-off losses, short tail current, and low EMI. This IGBT is qualified according to JEDEC for target applications and is RoHS compliant. It is suitable for applications such as drives, solar inverters, uninterruptible power supplies, and converters with medium switching frequency.Product AttributesBrand:
IGBT Module 1200V 75A JIAENSEMI GL75HF120F1UR1 Featuring Planar Field Stop Technology for Industrial
Product OverviewThe GL75HF120F1UR1 is a 1200V, 75A IGBT half-bridge module featuring Planar Field-stop Technology for high RBSOA capability and low turn-off losses. It is ideal for applications such as inductive heating, welding, and high-frequency switching.Product AttributesBrand: JIAEN Semiconductor Co., LtdMaterial of Module Baseplate: CuInternal Isolation: Al2O3 (basic insulation, class 1, IEC 61140)Technical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitsNote
1200V 140A IGBT low switching losses low conduction loss HXY MOSFET IKQ140N120CH7XKSA1-HXY ideal for EV charging applications
Product OverviewThe IKQ140N120CH7XKSA1 is a 1200V, 140A IGBT designed for high-efficiency applications. It features high input impedance, low switching losses, low saturation voltage (VCE(SAT)), and low conduction loss. This device is copacked with a fast recovery diode, offering rugged transient reliability and low EMI. It is suitable for applications such as string solar inverters and EV-charging.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: IKQ140N120C
High speed IGBT JIAENSEMI JNG40T65HS1 650V 40A suitable for inverter and motor control applications
Product OverviewJIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as Motor control, general inverter, and other soft switching applications. This IGBT features 650V, 40A capability with a typical VCE(sat) of 2.0V at VGE=15V and IC=40A. It provides high-speed switching, higher system efficiency, soft current turn-off waveforms, and a square RBSOA.Product AttributesBrand: JIAENProduct Series: JNG40T65HS1Package Outline: TO247Technical
High Current Capability HXY MOSFET AOKS40B65H1 with Maximum Junction Temperature of 175C and Low EMI
Product OverviewThe AOKS40B65H1 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in Vcesat, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, it is suitable for UPS, EV-Charger, and Solar String Inverter applications.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: AOKS40B65H1Origin:
Power electronic IGBT module Infineon FP25R12W2T4 for inverter and brake chopper applications
FP25R12W2T4 IGBT-ModuleThe FP25R12W2T4 is an IGBT module designed for inverter and brake-chopper applications. It offers high performance and reliability for various power electronic systems.Technical SpecificationsComponentParameterValueUnitConditionsIGBT, Inverter / Brake-ChopperVCES1200VTvj = 25CIC nom25ATC = 100C, Tvj max = 175CIC39ATC = 25C, Tvj max = 175CICRM50AtP = 1 msPtot175WTC = 25C, Tvj max = 175CVGES+/-20VVCE sat1.85 / 2.15 / 2.25 / 2.25VIC = 25 A, VGE = 15 V, Tvj
HXY MOSFET IGW40N60TP with Excellent Thermal Stability and Low Saturation Voltage Characteristics
Product OverviewThe IGW40N60TP is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It offers easy paralleling capability due to its positive temperature coefficient in Vcesat, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, this device is suitable for UPS, EV-Chargers, and Solar String Inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: IGW40N60TPPackage: TO
Infineon F3L150R07W2E3 B11 IGBT module featuring low VCEsat and low inductive design for power conversion
Product OverviewThe F3L150R07W2E3_B11 is an EasyPACK IGBT module featuring Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode with PressFIT and NTC. It offers increased blocking voltage capability to 650V, low inductive design, low switching losses, and low VCEsat. Its applications include 3-Level, Solar, and UPS systems. The module utilizes an Al2O3 substrate with low thermal resistance and a compact design with PressFIT connection technology and integrated mounting
Robust HXY MOSFET IRGP4263-EPBF-HXY designed to handle high temperatures and heavy electrical loads
Product OverviewThe IRGP4263-EPBF is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. It offers easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. Key features include a maximum junction temperature of 175C and suitability for UPS, EV-Charger, and Solar String Inverter applications.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel
industrial power module Infineon FP100R12N2T7 with TRENCHSTOP IGBT7 and solder contact technology
Product OverviewThe FP100R12N2T7 EconoPIM2 module integrates TRENCHSTOP IGBT7 and Emitter Controlled 7 diodes with an NTC temperature sensor. It offers electrical advantages such as low VCEsat and overload operation up to 175C. Mechanically, it features an Al2O3 substrate with low thermal resistance, a copper base plate, and solder contact technology. This module is qualified for industrial applications.Product AttributesBrand: InfineonProduct Line: EconoPIM2Technology:
Power Device HXY MOSFET IXYH75N65C3H1-HXY IGBT with Trench Field Stop Technology and RoHS Compliance
Product DescriptionThe IXYH75N65C3H1 is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction loss, improving switching characteristics, and increasing avalanche energy. It is designed for applications such as UPS, motor drives, boost converters, and portable power stations. The device offers a positive temperature coefficient, fast switching speeds, low VCE
1200V 50A IGBT Power Transistor for UPS EV Chargers Solar Inverters HXY MOSFET APT50GT120B2RDQ2G-HXY
Product OverviewThe APT50GT120B2RDQ2G is a 1200V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for UPS, EV-Chargers, and Solar String Inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: APT50GT120B2RDQ2GOrigin: Shenzhen HuaXuanYang Electronics CO
Power transistor HXY MOSFET IKW50N60H3-HXY designed for enhanced switching efficiency and durability
Product OverviewThe IKW50N60H3 is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching efficiency, and increasing avalanche energy capability. It is designed for applications such as UPS, motor drives, and boost converters, offering reliability and ruggedness.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel:
IGBT Module 1200V 50A HXY MOSFET APT50GR120B2-HXY for Energy Storage Inverters Solar Inverters and UPS
Product OverviewThe APT50GR120B2 is a 1200V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for use in UPS, EV-Chargers, Solar String Inverters, and Energy Storage Inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: APT50GR120B2Origin: Shenzhen
Insulated Gate Bipolar Transistor HXY MOSFET IRG7PH46UD-EP-HXY with 1200V Voltage and 40A Current
Product OverviewThe IRG7PH46UD-EP is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications requiring high reliability and efficiency, featuring a positive temperature coefficient, fast switching speeds, low VCE(sat), and rugged construction. The device
IGBT transistor Infineon IKW15N120H3 with low VCEsat and maximum junction temperature rating of 175C
Product DescriptionThe IKW15N120H3 is a high-speed switching IGBT in a DuoPack configuration, featuring TRENCHSTOPTM technology. This technology provides a very low VCEsat, low EMI, and a very soft, fast recovery anti-parallel diode. It is designed for applications requiring high switching frequencies and offers a maximum junction temperature of 175C. The product is qualified according to JEDEC standards for target applications and is Pb-free and RoHS compliant.Product
Power Semiconductor HXY MOSFET IGW40T120FKSA1-HXY with TO247 Package and 160A Pulsed Collector Current
Product OverviewThe IGW40T120FKSA1 is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications requiring high reliability and efficient power handling.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: IGW40T120FKSA1Origin: Shenzhen
650V 75A Power IGBT HXY MOSFET IXYH100N65C3-HXY TO-247 Package Suitable for Power Electronics
Product OverviewThe IXYH100N65C3 is a 650V, 75A Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage, making it suitable for demanding power electronics systems.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: IXYH100N65C3Origin: Shenzhen HuaXuanYang Electronics CO.,LTDPackage: TO
