Single IGBTs
Power IGBT Module HXY MOSFET FGH75T65SHD-F155-HXY Suitable for UPS EV Chargers and Solar Inverters
Product OverviewThe FGH75T65SHD-F155 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for demanding applications such as UPS, EV-Chargers, Solar String Inverters, and Energy Storage Inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel:
Industrial EconoPACK3 Module Infineon FS300R12N3E7 with TRENCHSTOPIGBT7 and Integrated NTC Temperature Sensor
EconoPACK3 Module with TRENCHSTOPIGBT7 and Emitter Controlled 7 Diode and NTCThe EconoPACK3 module features TRENCHSTOPIGBT7 technology and an emitter-controlled 7 diode, designed for high power and thermal cycling capability. It offers low VCE,sat, overload operation up to 175C, and solder contact technology. The module integrates an NTC temperature sensor and a copper base plate with an Al2O3 substrate for low thermal resistance. This product is qualified for industrial
62mm C Series IGBT Module Infineon FF150R17KE4 with Emitter Controlled Diode and High Current Capability
Product OverviewThe FF150R17KE4 is a 62mm C-Series module featuring Trench/Fieldstop IGBT4 and Emitter Controlled Diode technology. Designed for high-power applications, it offers an extended operating temperature range, low VCEsat, and exceptional robustness. Its electrical and mechanical features make it suitable for demanding industrial uses.Product AttributesBrand: InfineonSeries: C-SeriesModel: FF150R17KE4Certifications: EN61140 (Basic insulation)Material (Baseplate):
Insulated Gate Bipolar Transistor HXY MOSFET IXXX160N65B4-HXY 650V 160A TO247P Package RoHS Compliant Device
Product OverviewThe IXXX160N65B4 is a 650V, 160A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C and RoHS compliance, this device is suitable for demanding power electronics applications.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDOrigin:
Infineon IGW50N65F5 650V IGBT Featuring High Speed Switching and Low Gate Charge for Power Conversion
Product OverviewThe IGW50N65F5 is a high-speed 650V IGBT from Infineon's TRENCHSTOPTM 5 technology. It offers best-in-class efficiency in hard switching and resonant topologies, with low gate charge (QG) and a maximum junction temperature of 175C. This IGBT is an ideal fit for boost converters when paired with SIC Schottky Diodes and is qualified according to JEDEC standards for industrial applications. It is Pb-free and RoHS compliant.Product AttributesBrand: InfineonTechnol
650V 75A IGBT Transistor HXY MOSFET STGWA75M65DF2-HXY for Performance in UPS and EV Charger Systems
Product OverviewThe STGWA75M65DF2 is a 650V, 75A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It offers easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for use in UPS, EV-Chargers, Solar String Inverters, and Energy Storage Inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: STGWA75M65DF2Package: TO
Powerful HXY MOSFET AFGHL75T65SQ-HXY IGBT with 650V Collector Emitter Voltage and 90A Collector Current
Product OverviewThe AFGHL75T65SQ is an Insulated Gate Bipolar Transistor (IGBT) offering high performance and reliability. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is designed for applications such as UPS, EV-Chargers, Solar String Inverters, and Energy Storage Inverters.Product AttributesBrand: HUAXUANYANGModel: AFGHL75T65SQManufacturer: HXY ELECTRONICS CO.
Infineon IGW40N60H3 IGBT featuring low EMI and soft fast recovery diode with TRENCHSTOP technology
Product OverviewThe IGW40N60H3 is a high-speed IGBT from Infineon's third-generation series, featuring TRENCHSTOP technology. This technology offers very low VCEsat, low EMI, and a very soft, fast recovery anti-parallel diode. Designed for demanding applications, it boasts a maximum junction temperature of 175C and is qualified according to JEDEC standards for target applications. This IGBT is Pb-free and RoHS compliant, with PSpice models available for simulation.Product
IGW50N65H5AXKSA1 HXY MOSFET 650V 50A IGBT Ideal for UPS EV Charger and Solar String Inverter Systems
Product OverviewThe IGW50N65H5AXKSA1 is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. Key features include a maximum junction temperature of 175C and suitability for UPS, EV-Charger, and Solar String Inverter applications.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.
switching component JIAENSEMI JNG60T65HJU1 Trench IGBT for UPS and soft switching power electronics
Product OverviewThe JNG60T65HJU1 is a Trench IGBT from JIAEN Semiconductor, designed for high-speed switching applications. It offers lower losses and higher energy efficiency, making it suitable for UPS, induction converters, uninterruptible power supplies, and other soft switching applications. Key features include soft current turn-off waveforms and a square RBSOA.Product AttributesBrand: JIAENOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications:
Power Electronics Component Infineon IKA15N65F5 IGBT with Low Gate Charge and High Breakdown Voltage
Product OverviewThe IKA15N65F5 is a high-speed 5 FAST IGBT from Infineon's TRENCHSTOPTM 5 technology, copacked with a RAPID 1 fast and soft antiparallel diode. This DuoPack IGBT offers best-in-class efficiency in hard switching and resonant topologies, a 650V breakdown voltage, low QG, and a maximum junction temperature of 175C. It is qualified according to JEDEC for target applications and is Pb-free and RoHS compliant. Ideal for applications such as solar converters,
High power Infineon FZ600R12KE4 IGBT module with 1200 volt voltage and 600 amp continuous current rating
Product OverviewThe FZ600R12KE4 is a 62mm C-Series IGBT module featuring Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode technology. It offers extended operation temperature, low switching losses, high robustness, and a positive temperature coefficient for VCEsat. This module is designed for high-power applications such as high-power converters, motor drives, UPS systems, and wind turbines.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not
insulated gate bipolar transistor HXY MOSFET IXYH55N120C4-HXY with trench and field stop technology
Product OverviewThe IXYH55N120C4 is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction loss, improving switching speed, and increasing avalanche energy. It is designed for applications such as motor drives, PTC, and OBC.Product AttributesBrand: HUAXUANYANGOrigin: HXY ELECTRONICS CO.,LTDCertifications: Halogen Free and Green Devices Available (RoHS
IGBT transistor HXY MOSFET IXYP15N65C3D1M-HXY for energy storage UPS and three phase solar inverters
Product OverviewThe IXYP15N65C3D1M is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It offers easy paralleling capability due to a positive temperature coefficient in Vcesat, low EMI, low gate charge, and low saturation voltage. This device is suitable for applications such as UPS, EV-charging, three-phase solar string inverters, and energy storage systems. Manufactured by HUAXUANYANG HXY ELECTRONICS CO.,LTD.Product AttributesBrand:
IGBT transistor HXY MOSFET IXXH60N65C4-HXY with 650V collector emitter voltage and 100A current rating
Product OverviewThe IXXH60N65C4 is an Insulated Gate Bipolar Transistor (IGBT) utilizing advanced Trench and Field Stop (T-FS) technology. This design enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is suitable for applications requiring fast switching and low saturation voltage.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: IXXH60N65C4Package Type: TO-247Certifications: Halogen
power switching JIAENSEMI JNG40T65HJU1 IGBT 650V 40A trench technology for industrial applications
Product OverviewJIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as UPS, Induction converters, Uninterruptible power supplies, and other soft switching applications. The JNG40T65HJU1 features a 650V, 40A rating with a typical VCE(sat) of 1.7V at VGE=15V and IC=40A. Its high-speed switching capability and Trench and Field-Stop technology contribute to higher system efficiency and easy parallel switching.Product AttributesBrand:
Trench FS IGBT Half Bridge Module JIAENSEMI GN300HF120T1SZ1 1200V 300A for AC Servo Drive Amplifiers
Product OverviewThe JIAEN GN300HF120T1SZ1 is a 1200V, 300A Trench FS IGBT Half Bridge Module designed for general inverter and soft switching applications. It offers lower losses and higher energy efficiency, making it suitable for motor drives, AC and DC servo drive amplifiers, and power supplies. Key features include a low VCE(sat) of 1.6V (typ.), soft turn-off capability, a positive VCE(on) temperature coefficient, and ease of paralleling.Product AttributesBrand:
62mm C Series IGBT module Infineon FF200R17KE4 with fast Trench Fieldstop IGBT4 and Emitter Controlled diode
Product OverviewThe FF200R17KE4 is a 62mm C-Series IGBT module featuring a fast Trench/Fieldstop IGBT4 and an Emitter Controlled 4 diode. It offers extended operation temperature, low VCEsat with a positive temperature coefficient, and high robustness. This module is designed for high-power applications such as inverters, motor drives, UPS systems, and wind turbines.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifica
Industrial Grade Infineon FF150R12RT4 IGBT Module with Isolated Base Plate and Standard Housing Design
FF150R12RT4 IGBT-ModuleThe FF150R12RT4 is a 34mm module featuring a fast Trench/Fieldstop IGBT4 and an Emitter Controlled 4 diode. It is designed for high-frequency switching applications such as motor drives and UPS systems. Key advantages include an extended operation temperature (Tvj op = 150C), low switching losses, low VCEsat, and VCEsat with a positive temperature coefficient. The module has an isolated base plate and a standard housing.Product AttributesModule Label
Power Semiconductor Device HXY MOSFET IXYH40N65C3H1 HXY Suitable for EV Charger and Renewable Energy Systems
Product OverviewThe IXYH40N65C3H1 is an Insulated Gate Bipolar Transistor (IGBT) from HUAXUANYANG HXY ELECTRONICS CO.,LTD. It offers easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, this device is suitable for applications such as UPS, EV-Chargers, and Solar String Inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDOrigin:
