Single IGBTs
600V IGBT Infineon IKA06N60T with soft fast recovery emitter controlled diode and high ruggedness
Product OverviewThe IKA06N60T is a high-performance IGBT from Infineon's TRENCHSTOP Series, featuring Fieldstop technology and a soft, fast-recovery Emitter Controlled HE diode. Designed for 600V applications, it offers very low VCE(sat) of 1.5V (typ.), a maximum junction temperature of 175C, and a ...
High current HXY MOSFET RGT00TS65DGC11-HXY with 50A rating and advanced trench field stop technology
Product DescriptionThe RGT00TS65DGC11 is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching speed, and increasing avalanche energy. It is designed for ...
Robust IGBT HXY MOSFET AOK75B65H1 featuring low saturation voltage and high DC collector current for EV charger modules
Product OverviewThe AOK75B65H1 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for use ...
IGBT power device HXY MOSFET AOK50B65M2 with RoHS compliance halogen free and green device options
Product OverviewThe AOK50B65M2 is an Insulated Gate Bipolar Transistor (IGBT) utilizing advanced Trench and Field Stop (T-FS) technology. This design minimizes conduction losses, enhances switching performance, and increases avalanche energy. It is designed for applications requiring high efficiency ...
power control HXY MOSFET IRGP4266-EPBF-HXY for EV charger UPS and solar string inverter applications
Product OverviewThe IRGP4266-EPBF is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It offers easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for ...
High Current IGBT HXY MOSFET RJH1CV7DPQ-HXY Semiconductor Device With Avalanche Energy Capability
Product OverviewThe RJH1CV7DPQ is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology significantly reduces conduction losses, enhances switching performance, and improves avalanche energy. It is designed for applications ...
Robust Infineon IKW75N60T trenchstop igbt with fast recovery anti parallel emitter controlled diode
Product OverviewThe IKW75N60T is a TRENCHSTOP Series IGBT featuring Low Loss DuoPack technology with an Emitter Controlled HE diode. It offers very low VCE(sat), a maximum junction temperature of 175C, and a short circuit withstand time of 5s. This device is designed for high ruggedness, temperature...
Powerful HXY MOSFET RGWS00TS65GC13-HXY 650V 50A IGBT Suitable for UPS EV Chargers and Solar Inverters
Product OverviewThe RGWS00TS65GC13 is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for applications requiring high reliability and performance. It features easy paralleling capability due to a positive temperature coefficient in V CESAT, low EMI, low gate charge, and low saturation ...
EasyPACK module with fast trench fieldstop 3 IGBT SiC diode and integrated NTC sensor Infineon DF80R12W2H3FB11
EasyPACK Module with fast Trench/Fieldstop High-Speed 3 IGBT and SiC diode and PressFIT / NTCThe EasyPACK module features a fast Trench/Fieldstop High-Speed 3 IGBT and a SiC Schottky diode, along with PressFIT technology and an integrated NTC temperature sensor. It is designed for applications such ...
650V 50A IGBT Power Transistor HXY MOSFET APT45GR65B-HXY Suitable for UPS EV Charger Energy Storage
Product OverviewThe APT45GR65B is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is ...
power conversion component HXY MOSFET AFGHL50T65SQD-HXY 650V 50A IGBT for UPS EV chargers solar inverters
Product OverviewThe AFGHL50T65SQD is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for applications requiring high reliability and efficient power conversion. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and ...
IGBT Module JIAENSEMI JNG50T120LIS2 Featuring High Speed Switching and Energy Saving Characteristics
Product OverviewJIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as motor control, general inverters, and other soft switching applications. They feature high-speed switching, higher system efficiency, soft current turn-off waveforms, and a square RBSOA...
insulated gate bipolar transistor HXY MOSFET AOK40B65HQ2 with low EMI and high temperature tolerance
Product OverviewThe AOK40B65HQ2 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. It features easy paralleling capability due to a positive temperature coefficient in Vcesat, low EMI, low gate charge, and low saturation voltage. With a maximum ...
High collector current HXY MOSFET IGW100N60H3-HXY with low EMI and low saturation voltage features
Product OverviewThe IGW100N60H3 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency applications. It features high input impedance, low saturation voltage, low switching losses, and robust transient reliability, making it suitable for demanding industrial uses. Its low EMI ...
Insulated Gate Bipolar Transistor HXY MOSFET IXYH40N120C3-HXY with Low Saturation Voltage and EMI
Product OverviewThe IXYH40N120C3 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. Ideal for UPS, EV-chargers, ...
Power Semiconductor HXY MOSFET IRGP4790D-EPBF-HXY 650V 75A IGBT Module Suitable for UPS EV Chargers
Product OverviewThe IRGP4790D-EPBF is a 650V, 75A Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It offers easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is ...
Power transistor HXY MOSFET IGW50N60TP designed for UPS EV charger and solar string inverter systems
Product OverviewThe IGW50N60TP is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It offers easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. Key features include a maximum ...
insulated gate bipolar transistor HXY MOSFET SPT40N120F1AT8TL HXY designed for UPS and inverter
Product OverviewThe SPT40N120F1AT8TL is an Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable ...
Infineon IKP08N65H5 650V IGBT Featuring RAPID 1 Diode and TRENCHSTOP 5 Technology for Power Switching
Product OverviewThe IKP08N65H5 is a high-speed 5th generation IGBT from Infineon's TRENCHSTOP 5 technology, copacked with a RAPID 1 fast and soft antiparallel diode. It offers best-in-class efficiency in hard switching and resonant topologies, serving as a plug-and-play replacement for previous ...
High current IGBT HXY MOSFET RGS80TS65HRC11-HXY with low gate charge and easy paralleling capability
Product OverviewThe RGS80TS65HRC11 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in Vcesat, low EMI, low gate charge, and low saturation voltage. With a maximum junction ...
