Single IGBTs
IGBT module Infineon IKW40N65F5 with 650V voltage and 74A current featuring RAPID 1 diode technology
Product OverviewThe IKW40N65F5 and IKP40N65F5 are high-speed 5 FAST IGBTs in TRENCHSTOPTM 5 technology, copacked with RAPID 1 fast and soft anti-parallel diodes. These 650V DuoPack devices offer best-in-class efficiency in hard switching and resonant topologies, low Qg, and a maximum junction temperature of 175C. They are qualified according to JEDEC for target applications and are Pb-free and RoHS compliant.Product AttributesBrand: InfineonTechnology: TRENCHSTOPTM 5Diode
AECQ101 Qualified TO247 Package HXY MOSFET SPT40N120T1B1T8TL HXY Ideal for PTC and OBC Applications
Product OverviewThe SPT40N120T1B1T8TL is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It features a positive temperature coefficient, fast switching speeds, low VCE(sat), and is reliable and rugged. The device is AEC-Q101 qualified, supports a 175 operating temperature, and is
insulated gate bipolar transistor HXY MOSFET AOK60B65H2AL with advanced trench and field stop technology
Product OverviewThe AOK60B65H2AL is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications requiring efficient power conversion and fast switching speeds.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDOrigin: Shenzhen HuaXuanYang
1200V 75A IGBT Transistor HXY MOSFET APT70GR120B2-HXY with Low EMI and Enhanced Thermal Stability
Product OverviewThe APT70GR120B2 is a 1200V, 75A Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. It features low gate charge, low saturation voltage (VCE(SAT)), and easy paralleling capability due to a positive temperature coefficient in VCESAT. Its low EMI and maximum junction temperature of 175C make it suitable for demanding industrial uses.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: APT70GR120B2Origin: Shenzhen
soft commutation Infineon IHW25N120E1 IGBT with positive temperature coefficient and low EMI performance
Product DescriptionThe IHW25N120E1 is a Resonant Soft-Switching Series Reverse conducting IGBT featuring a powerful monolithic body diode with low forward voltage, specifically designed for soft commutation. Utilizing TRENCHSTOPTM technology, it offers very tight parameter distribution, high ruggedness, stable temperature behavior, low VCEsat, and easy parallel switching capability due to a positive temperature coefficient in VCEsat. This IGBT also provides low EMI and is
switching transistor HXY MOSFET NGTB40N120IHRWG-HXY with RoHS compliance and green halogen free packaging
Product OverviewThe NGTB40N120IHRWG is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching efficiency, and increasing avalanche energy. It is designed for applications requiring high reliability and robust performance, with features like a positive temperature coefficient, fast switching, low VCE(sat), and a high operating
Power semiconductor HXY MOSFET FGH50T65SQD-F155-HXY 650V 50A IGBT with low gate charge and low EMI
FGH50T65SQD-F155 Insulated Gate Bipolar TransistorThe FGH50T65SQD-F155 is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It offers easy paralleling capability due to its positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. Key features include a maximum junction temperature of 175C and suitability for UPS, EV-Charger, and Solar String Inverter applications.Product AttributesBrand:
Power transistor HXY MOSFET RGWS80TS65GC13-HXY with excellent thermal stability and low EMI
Product OverviewThe RGWS80TS65GC13 is an Insulated Gate Bipolar Transistor (IGBT) from HUAXUANYANG HXY ELECTRONICS CO.,LTD. It offers easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, this device is suitable for applications such as UPS, EV-chargers, and solar string inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel:
HXY MOSFET IXA45IF1200HB HXY IGBT with 1200V Collector Emitter Voltage and Fast Switching Capability
IXA45IF1200HB Insulated Gate Bipolar TransistorThe IXA45IF1200HB is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology significantly reduces conduction losses, enhances switching performance, and improves avalanche energy handling. It is designed for applications such as PTC, motor drives, and onboard chargers (OBC), offering features like a positive temperature coefficient, fast switching, low VCE
Industrial power Infineon FF600R12KE7 module with 1200 volt VCES and isolated base plate construction
Product OverviewThe FF600R12KE7 is a 62 mm C-Series module featuring TRENCHSTOPIGBT7 technology and an emitter-controlled 7 diode. It offers high power density and is designed for demanding industrial applications. Key electrical features include a VCES of 1200 V and a nominal collector current (IC nom) of 600 A. The module boasts excellent mechanical characteristics, including 4 kV AC 1 min insulation, high creepage and clearance distances, and an isolated base plate.Product
650V 90A IGBT transistor HXY MOSFET APT70GR65B-HXY TO247 package for electronic applications
Product OverviewThe APT70GR65B is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, it is suitable for demanding power electronics systems.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: APT70GR65BOrigin: Shenzhen HuaXuanYang
Highly insulated Infineon FZ250R65KE3 module with CTI greater than 600 and thermal cycling capability
Product OverviewHighly insulated module featuring Trench/Fieldstop IGBT3 and emitter controlled 3 diodes. This module offers electrical advantages such as a VCES of 6500 V and a low VCE,sat. Mechanical features include extended storage temperature down to -55 C, high creepage and clearance distances, a package with CTI > 600, and enhanced insulation of 10.4 kV AC for 60 seconds. The AlSiC base plate enhances thermal cycling capability. Suitable for medium-voltage converters
Power Switching HXY MOSFET IXYH40N65B3D1-HXY IGBT Module with Low EMI and High Temperature Tolerance
Product OverviewThe IXYH40N65B3D1 is an Insulated Gate Bipolar Transistor (IGBT) from HUAXUANYANG HXY ELECTRONICS CO.,LTD. It offers easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, this device is suitable for applications such as UPS, EV-Chargers, and Energy Storage Inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel:
1200 Volt Insulated Gate Bipolar Transistor HXY MOSFET APT40GR120B-HXY for Energy Conversion Systems
APT40GR120B Insulated Gate Bipolar TransistorThe APT40GR120B is an Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. Key applications include UPS, EV-Chargers, Solar String Inverters, and Energy Storage Inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDOrigin: Shenzhen
Power module Infineon FP75R12N2T7 EconoPIM2 with industrial certifications and solder contact technology
EconoPIM2 Module with TRENCHSTOP IGBT7 and Emitter Controlled 7 Diode and NTC The FP75R12N2T7 EconoPIM2 module integrates TRENCHSTOP IGBT7 and Emitter Controlled 7 diode technology, offering high power and thermal cycling capability. It features a low VCEsat and supports overload operation up to 175C. Designed for industrial applications, this module is qualified according to IEC 60747, 60749, and 60068 standards. Its construction includes a copper base plate and an Al2O3
Industrial Grade IGBT Module Infineon FS50R12KT4B15 Suitable for Auxiliary Inverters and Motor Drives
IGBT Module FS50R12KT4_B15The FS50R12KT4_B15 is an EconoPACK2 module featuring Trench/Fieldstop IGBT4 and Emitter Controlled 4 diodes with an integrated NTC. It offers low VCEsat with a positive temperature coefficient, high power and thermal cycling capability, and an Al2O3 substrate with low thermal resistance. This module is suitable for auxiliary inverters, motor drives, and servo drives.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Al2O3 Substrate,
IGBT HXY MOSFET RGS00TS65HRC11-HXY featuring low saturation voltage and low electromagnetic interference
Product OverviewThe RGS00TS65HRC11 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. Its maximum junction temperature is 175C.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: RGS00TS65HRC11Origin: Shenzhen, ChinaPackage: TO-247Packing: 30PCSTechnical SpecificationsSymbolPar
IGBT Transistor HXY MOSFET BIDW50N65T-HXY Featuring Reduced Conduction Losses for Motor Drives and UPS
Product OverviewThe BIDW50N65T is an Insulated Gate Bipolar Transistor (IGBT) utilizing advanced Trench and Field Stop (T-FS) technology. This design enhances performance by reducing conduction losses, improving switching speed, and increasing avalanche energy capability. It is suitable for applications such as UPS, motor drives, boost converters, and portable power stations.Product AttributesBrand: HUAXUANYANGModel: BIDW50N65TOrigin: Shenzhen HuaXuanYang Electronics CO.
Infineon IKB06N60T TRENCHSTOP Technology IGBT with Tight Parameter Distribution and Low EMI Emission
Product OverviewThe IKB06N60T is a Low Loss DuoPack IGBT featuring TRENCHSTOP and Fieldstop technology with a soft, fast recovery anti-parallel Emitter Controlled HE diode. It offers very low VCE(sat) of 1.5V (typ.), a maximum junction temperature of 175C, and a short circuit withstand time of 5s. Designed for frequency inverters in applications like washing machines, fans, pumps, and vacuum cleaners, this IGBT provides very tight parameter distribution, high ruggedness,
Powerful HXY MOSFET FGHL50T65SQ-HXY 650V 50A IGBT with Easy Paralleling and Low Gate Charge Features
Product OverviewThe FGHL50T65SQ is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for use in UPS, EV-Chargers, and Solar String Inverters.Product AttributesBrand: HUAXUANYANG ELECTRONICS CO.,LTDModel: FGHL50T65SQOrigin: Shenzhen HuaXuanYang Electronics CO.
