Single IGBTs
650 Volt 70 Amp IGBT HXY MOSFET MIW40N65RA-BP-HXY TO247 Package Designed for Solar Inverters and UPS
Product OverviewThe MIW40N65RA-BP is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It offers easy paralleling capability due to a positive temperature coefficient in Vcesat, low EMI, low gate charge, and low saturation voltage. With a maximum junction ...
650V Collector Emitter Voltage IGBT HXY MOSFET IXYH75N65C3D1-HXY with TO247 Package and Halogen Free
Product OverviewThe IXYH75N65C3D1 is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction loss, improving switching characteristics, and increasing avalanche energy. It is designed ...
power transistor HXY MOSFET IRG7PH46U-EP-HXY offering improved switching speed and thermal stability
Product OverviewThe IRG7PH46U-EP is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction loss, improving switching characteristics, and increasing avalanche energy. It is designed for ...
650V 50A IGBT RGTH00TS65GC11 HXY MOSFET with Low EMI Low Gate Charge and Easy Paralleling Capability
Product OverviewThe RGTH00TS65GC11 is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is ...
1200V 50A IGBT Transistor HXY MOSFET APT50GF120B2RG-HXY for High Power Solar Inverter EV Charger and UPS
Product OverviewThe APT50GF120B2RG is a 1200V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. It features easy paralleling capability due to its positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is ...
insulated gate bipolar transistor HXY MOSFET AOK40B65M3 with low gate charge and high voltage rating
Product OverviewThe AOK40B65M3 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to its positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction ...
High Voltage IGBT HXY MOSFET IRG7PH50K10D-EPBF-HXY for Solar Inverters and Energy Storage Solutions
Product OverviewThe IRG7PH50K10D-EPBF is an Insulated Gate Bipolar Transistor (IGBT) from HUAXUANYANG HXY ELECTRONICS CO.,LTD. It offers easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. Key applications include UPS...
IGBT 650V 75A Power Transistor HXY MOSFET FGW75N65WE HXY Suitable for UPS EV Chargers and Solar Inverters
Product OverviewThe FGW75N65WE is a 650V, 75A Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is ...
High voltage HXY MOSFET AFGHL40T65SPD-HXY optimized for UPS EV Chargers and energy storage inverters
Product OverviewThe AFGHL40T65SPD is an Insulated Gate Bipolar Transistor (IGBT) from HUAXUANYANG HXY ELECTRONICS CO.,LTD. It offers easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction ...
High current capacity HXY MOSFET IKY75N120CH3XKSA1-HXY insulated gate bipolar transistor in TO247P4L package
Product OverviewThe IKY75N120CH3XKSA1 is an Insulated Gate Bipolar Transistor (IGBT) from HUAXUANYANG HXY ELECTRONICS CO.,LTD. It features high current capability, low saturation voltage, and low switching losses, making it suitable for applications requiring high efficiency and rugged transient ...
insulated gate bipolar transistor Infineon IRGP4066DPBF with low switching losses and ultrafast diode
Product OverviewThe IRGP4066DPbF and IRGP4066D-EPbF are n-channel Insulated Gate Bipolar Transistors (IGBTs) featuring ultrafast soft recovery diodes. Designed with low VCE(ON) Trench IGBT Technology, these devices offer low switching losses and high efficiency across a wide range of applications. ...
power component HXY MOSFET ITF48IF1200HR-HXY ideal for motor drives power factor correction and on board chargers
Product OverviewThe ITF48IF1200HR is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed ...
switching HXY MOSFET IXYH50N65C3H1 HXY designed for high junction temperature and low EMI environments
Product OverviewThe IXYH50N65C3H1 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to its positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction ...
Power semiconductor device Infineon IKW50N65EH5 featuring TRENCHSTOP 5 technology and RAPID 1 diode
Product OverviewThe IKW50N65EH5 is a high-speed fifth-generation IGBT from Infineon, utilizing TRENCHSTOPTM 5 technology. It offers best-in-class efficiency in hard switching and resonant topologies and serves as a plug-and-play replacement for previous IGBT generations. This device features a 650V ...
EconoPIM2 power module featuring Infineon FP100R12N2T7BPSA2 with TRENCHSTOP IGBT7 and NTC temperature sensor
Product OverviewThe FP100R12N2T7 EconoPIM2 module integrates TRENCHSTOP IGBT7 and Emitter Controlled 7 diode technology. It offers electrical features such as a VCES of 1200 V, IC nom of 100 A / ICRM of 200 A, low VCEsat, and overload operation up to 175C. Mechanically, it features an Al2O3 ...
Industrial Grade IGBT Module Infineon FF300R12KS4 62mm C Series with High Voltage and Current Ratings
Product DescriptionThe 62mm C-Series module features a fast IGBT2 for high-frequency switching applications. It is designed for inverter use and offers robust performance with excellent thermal characteristics.Product AttributesBrand: InfineonProduct Line: C-SeriesModel: FF300R12KS4Technical ...
Power IGBT HXY MOSFET IXXX200N65B4-HXY 650V 160A Low Saturation Voltage for Solar Inverters and UPS
Product OverviewThe IXXX200N65B4 is a 650V, 160A Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low gate charge, and low saturation voltage. This RoHS and Halogen-free ...
Durable HXY MOSFET FGH75N60SFTU-HXY IGBT Featuring Positive Temperature Coefficient and Easy Paralleling for Energy Storage
Product OverviewThe FGH75N60SFTU is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It offers easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for use ...
IGBT 650V 50A power transistor HXY MOSFET RGTH00TS65GC13-HXY suitable for UPS EV charger and solar inverter
Product OverviewThe RGTH00TS65GC13 is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This IGBT is ...
IGBT 650V 50A TO247 Package HXY MOSFET NGTB50N65FL2WG HXY Featuring Positive Temperature Coefficient
Product OverviewThe NGTB50N65FL2WG is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low Gate Charge, and low Saturation Voltage. The maximum ...
