Single IGBTs
Powerful HXY MOSFET RGT00TS65DGC13-HXY IGBT with TO247 package and 650 volt collector emitter voltage
Product OverviewThe RGT00TS65DGC13 is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction loss, improving switching characteristics, and increasing avalanche energy. It is ...
switching transistor HXY MOSFET RGS00TS65EHRC11-HXY for UPS motor drives boost converter applications
Product OverviewThe RGS00TS65EHRC11 is an Insulated Gate Bipolar Transistor (IGBT) utilizing advanced Trench and Field Stop (T-FS) technology. This design minimizes conduction losses, enhances switching performance, and improves avalanche energy. It is suitable for applications such as UPS, motor ...
IGBT transistor HXY MOSFET IXYX120N120C3-HXY 1200V 140A with low switching losses and rugged design
Product OverviewThe IXYX120N120C3 is a 1200V, 140A Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency applications. It features high input impedance, low switching losses, and a low saturation voltage (VCE(SAT)). Copacked with a fast recovery diode, it offers low conduction loss ...
Durable IGBT transistor HXY MOSFET FGH40T65SQD-F155-HXY optimized for UPS and renewable energy power systems
Product OverviewThe FGH40T65SQD-F155 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It offers easy paralleling capability due to its positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction ...
600 Volt 4 Amp Infineon IKP04N60T IGBT Featuring TrenchStop and Fieldstop Technology with EmCon HE Diode
Product OverviewThe IKP04N60T is a Low Loss DuoPack featuring an IGBT in TrenchStop and Fieldstop technology with a soft, fast recovery EmCon HE diode. It offers very low VCE(sat) of 1.5 V (typ.) and a maximum junction temperature of 175 C. Designed for frequency converters and drives, its ...
Power IGBT transistor HXY MOSFET IKW50N65H5-HXY with 650V voltage and 100A collector current rating
Product Overview The IKW50N65H5 is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed ...
600V IGBT Infineon IGP06N60T with low saturation voltage and short circuit withstand time of 5 seconds
Product OverviewThe IGP06N60T is a TRENCHSTOP Series Low Loss IGBT designed for 600V applications. It features very low VCE(sat) of 1.5V (typ.), a maximum junction temperature of 175C, and a short circuit withstand time of 5s. This IGBT utilizes TRENCHSTOP and Fieldstop technology, offering very ...
switching MOSFET HXY MOSFET RGSX5TS65HRC11-HXY designed for UPS EV charger and solar inverter systems
Product OverviewThe RGSX5TS65HRC11 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for ...
HXY MOSFET IGW40N60H3 HXY IGBT Featuring Low Saturation Voltage and Positive Temperature Coefficient
Product OverviewThe IGW40N60H3 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in Vcesat, low EMI, low gate charge, and low saturation voltage. With a maximum junction ...
IGBT transistor module HXY MOSFET IRGP4790-EPBF-HXY suitable for UPS EV chargers and solar inverters
Product OverviewThe IRGP4790-EPBF is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for ...
Durable HXY MOSFET STGWA100H65DFB2-HXY IGBT with TO-247 Package and High Diode Forward Current Rating
Product Overview The STGWA100H65DFB2 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency applications. It features high input impedance, low saturation voltage (VCE(SAT)), low switching losses, and rugged transient reliability. This IGBT is suitable for demanding industrial ...
Advanced Trench Fieldstop IGBT4 Infineon FS25R12W1T4 B11 with compact design and thermal management
Product OverviewThe FS25R12W1T4_B11 is an EasyPACK module featuring Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode with PressFIT and NTC. It offers low switching losses, low VCEsat with a positive temperature coefficient, and a compact design with an Al2O3 substrate for low thermal resistance...
Industrial MOSFET HXY MOSFET IGW75N65H5XKSA1-HXY with Low Saturation Voltage and High Pulsed Current
Product OverviewThe IGW75N65H5XKSA1 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. Its maximum junction ...
Power Switching HXY MOSFET IXGH40N120A2-HXY IGBT Module for EV Chargers Solar Inverters and UPS Systems
Product OverviewThe IXGH40N120A2 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for ...
High speed switching IGBT JIAENSEMI JNG25T65FS1 650V 25A TO220F package for motor control applications
Product OverviewJIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as motor control, general inverters, and other soft switching applications. The JNG25T65FS1 features 650V, 25A, high-speed switching capabilities, and soft current turn-off waveforms, contributin...
Power semiconductor device HXY MOSFET IXXH40N65B4H1-HXY suitable for UPS EV Chargers and solar inverters
Product OverviewThe IXXH40N65B4H1 is an Insulated Gate Bipolar Transistor (IGBT) from HUAXUANYANG HXY ELECTRONICS CO.,LTD. It offers easy paralleling capability due to its positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction ...
Durable power transistor HXY MOSFET IRGP4063DPBF-HXY for boost converters and portable power stations
Product OverviewThe IRGP4063DPBF is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed ...
High voltage IGBT module HXY MOSFET NGTB30N135IHRWG-HXY 1350V 30A low saturation voltage for EV charger and UPS systems
Product OverviewThe NGTB30N135IHRWG is an Insulated Gate Bipolar Transistor (IGBT) from HUAXUANYANG HXY ELECTRONICS CO.,LTD. It offers easy paralleling capability due to its positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction ...
Durable power switching device HXY MOSFET IRGP4263D-EPBF-HXY IGBT with low EMI and high reliability
Product OverviewThe IRGP4263D-EPBF is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is ...
HXY MOSFET IRG8P60N120KD-EPBF-HXY IGBT device with RoHS compliance and performance in TO-247 package
Product OverviewThe IRG8P60N120KD-EPBF is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is AEC...
