Single IGBTs
EconoDUAL3 Infineon FF450R17ME4 IGBT module with isolated base plate and high power density design
Product OverviewThe FF450R17ME4 is an EconoDUAL3 IGBT module featuring Trench/Fieldstop IGBT4 and Emitter Controlled 3 diode with NTC. It offers low VCEsat with a positive temperature coefficient, high power density, and an isolated base plate. This module is suitable for motor drives, servo drives, UPS systems, and wind turbines.Product AttributesBrand: EconoDUAL3Certifications: UL approved (E83335)Module Label Code: DMXModule Material Number: Digit Module Serial Number (1-5
power transistor Infineon AIGB15N65H5 IGBT with low gate charge and 175C maximum junction temperature
Product OverviewThe AIGB15N65H5 is a high-speed Insulated Gate Bipolar Transistor (IGBT) from Infineon's TRENCHSTOP 5 technology. It offers best-in-class efficiency in hard switching and resonant topologies, serving as a plug-and-play replacement for previous generation IGBTs. With a 650V breakdown voltage, low gate charge, and a maximum junction temperature of 175C, this dynamically stress-tested and AEC-Q101 qualified component is ideal for demanding power applications
rugged JIAENSEMI JNG15T120HIRU2 trench IGBT module for motor drives UPS and portable power stations
Product OverviewJIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as UPS, Motor drives, PFC, Portable power stations, and other soft switching applications. These devices provide reliable and rugged performance with fast switching capabilities.Product AttributesBrand: JIAENCertifications: Halogen Free and Green Devices AvailableTechnical SpecificationsParameterValueUnitsConditionsAbsolute Maximum RatingsCollector-Emitter Voltage (VCES
High voltage HXY MOSFET NGTB35N65FL2WG HXY IGBT suitable for demanding power electronics applications
Product OverviewThe NGTB35N65FL2WG is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, this device is suitable for UPS, EV-Chargers, and Solar String Inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDOrigin: Shenzhen HuaXuanYang
switching device HXY MOSFET MIW40N120FLA-BP-HXY offering low VCE saturation and avalanche energy capability
Product OverviewThe MIW40N120FLA-BP is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications requiring high reliability and efficiency, featuring a positive temperature coefficient, fast switching speeds, low VCE(sat), and a rugged construction. The
High Temperature Stability and Low Gate Charge Infineon IKW08T120 IGBT Module for Frequency Converter
Product Overview The IKW08T120 is a Low Loss DuoPack featuring an IGBT in TrenchStop and Fieldstop technology with a soft, fast recovery Emitter Controlled HE diode. It offers reduced VCE(sat) and VF compared to BUP305D, a short circuit withstand time of 10s, and is designed for frequency converters and uninterrupted power supply applications. Its TrenchStop and Fieldstop technology ensures tight parameter distribution, high ruggedness, and temperature-stable behavior. The
1200V 50A power transistor HXY MOSFET IXYR50N120C3D1-HXY designed for UPS EV charger and solar inverter
Product OverviewThe IXYR50N120C3D1 is a 1200V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. Ideal for UPS, EV-chargers, and solar string inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: IXYR50N120C3D1Origin: Shenzhen HuaXuanYang Electronics CO.,LTDPackage: TO
High current IGBT HXY MOSFET STGWA40HP65FB-HXY designed for UPS and renewable energy systems applications
Product OverviewThe STGWA40HP65FB is an Insulated Gate Bipolar Transistor (IGBT) from HUAXUANYANG HXY ELECTRONICS CO.,LTD. It offers easy paralleling capability due to a positive temperature coefficient in Vcesat, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, this device is suitable for applications such as UPS, EV-Chargers, and Solar String Inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel:
switching device HXY MOSFET RGS80TSX2GC11-HXY optimized for conduction loss reduction and efficiency
RGS80TSX2GC11 Insulated Gate Bipolar TransistorThe RGS80TSX2GC11 is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction loss, improving switching efficiency, and increasing avalanche energy. It is designed for applications requiring high reliability and performance, such as motor drives and onboard chargers (OBC).Product AttributesBrand: HUAXUANYANGModel:
1200V 75A Insulated Gate Bipolar Transistor HXY MOSFET APT75GP120B2G-HXY for High Power Applications
Product OverviewThe APT75GP120B2G is a 1200V, 75A Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. It features low gate charge, low saturation voltage (Vce(sat)), and easy paralleling capability due to its positive temperature coefficient in Vce(sat). The maximum junction temperature is 175C.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: APT75GP120B2GOrigin: Shenzhen HuaXuanYang Electronics CO.,LTDPackage: TO-247PCPacking:
HXY MOSFET RGTH80TS65GC13 IGBT transistor featuring low EMI and maximum junction temperature of 175C
Product OverviewThe RGTH80TS65GC13 is an Insulated Gate Bipolar Transistor (IGBT) from HUAXUANYANG HXY ELECTRONICS CO.,LTD. Designed for high-performance applications, this device offers easy paralleling capability due to its positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. It features a maximum junction temperature of 175C and is suitable for applications such as UPS, EV-chargers, and solar string inverters.Product AttributesB
IGBT module Infineon IKP30N65H5 featuring RAPID 1 diode and TRENCHSTOP 5 technology for power control
IGBT High Speed 5 with RAPID 1 Diode - IKP30N65H5 The IKP30N65H5 is a high-speed 5th generation IGBT from Infineon, built on TRENCHSTOPTM 5 technology and copacked with a RAPID 1 fast and soft antiparallel diode. This DuoPack offers best-in-class efficiency in hard switching and resonant topologies, serving as a plug-and-play replacement for previous generation IGBTs. It features a 650V breakdown voltage, low gate charge, and a maximum junction temperature of 175C. The
Soft Switching IGBT JIAENSEMI JNG15T65KS1 with Enhanced Energy Efficiency and High Speed Performance
JNG15T65KS1 IGBTJIAEN Trench IGBTs offer lower losses and higher energy efficiency, making them suitable for applications such as motor control, general inverters, and other soft switching applications. They feature high-speed switching, higher system efficiency, soft current turn-off waveforms, and square RBSOA.Product AttributesBrand: JIAENModel: JNG15T65KS1Technical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max.UnitsCollector-Emitter VoltageVCES650VGate-Emitter
Durable HXY MOSFET NGTB40N120FL3WG-HXY IGBT module with 441 watt power dissipation and TO247 package type
Product OverviewThe NGTB40N120FL3WG is an Insulated Gate Bipolar Transistor (IGBT) utilizing advanced Trench and Field Stop (T-FS) technology. This design minimizes conduction losses, enhances switching performance, and improves avalanche energy. It is AEC-Q101 Qualified and suitable for demanding applications.Product AttributesBrand: HUAXUANYANGOrigin: Shenzhen HuaXuanYang Electronics CO.,LTDCertifications: AEC-Q101 Qualified, Halogen Free and Green Devices Available (RoHS
600V IGBT Infineon IKA06N60T with soft fast recovery emitter controlled diode and high ruggedness
Product OverviewThe IKA06N60T is a high-performance IGBT from Infineon's TRENCHSTOP Series, featuring Fieldstop technology and a soft, fast-recovery Emitter Controlled HE diode. Designed for 600V applications, it offers very low VCE(sat) of 1.5V (typ.), a maximum junction temperature of 175C, and a short circuit withstand time of 5s. Its advanced technology ensures tight parameter distribution, high ruggedness, temperature-stable behavior, and very high switching speeds with
High current HXY MOSFET RGT00TS65DGC11-HXY with 50A rating and advanced trench field stop technology
Product DescriptionThe RGT00TS65DGC11 is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching speed, and increasing avalanche energy. It is designed for applications requiring efficient power management and fast switching capabilities.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: RGT00TS65DGC11Package Type: TO
Robust IGBT HXY MOSFET AOK75B65H1 featuring low saturation voltage and high DC collector current for EV charger modules
Product OverviewThe AOK75B65H1 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for use in UPS, EV-Charger, Solar String Inverter, and Energy Storage Inverter applications.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: AOK75B65H1Origin: Shenzhen
IGBT power device HXY MOSFET AOK50B65M2 with RoHS compliance halogen free and green device options
Product OverviewThe AOK50B65M2 is an Insulated Gate Bipolar Transistor (IGBT) utilizing advanced Trench and Field Stop (T-FS) technology. This design minimizes conduction losses, enhances switching performance, and increases avalanche energy. It is designed for applications requiring high efficiency and reliability, featuring a positive temperature coefficient, fast switching speeds, and low VCE(sat). The device is available in RoHS compliant, Halogen Free, and Green options
power control HXY MOSFET IRGP4266-EPBF-HXY for EV charger UPS and solar string inverter applications
Product OverviewThe IRGP4266-EPBF is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It offers easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for use in UPS, EV-Charger, Solar String Inverter, and Energy Storage Inverter applications.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: IRGP4266-EPBFPackage: TO
High Current IGBT HXY MOSFET RJH1CV7DPQ-HXY Semiconductor Device With Avalanche Energy Capability
Product OverviewThe RJH1CV7DPQ is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology significantly reduces conduction losses, enhances switching performance, and improves avalanche energy. It is designed for applications requiring high reliability and efficiency, offering a positive temperature coefficient, fast switching speeds, low VCE(sat), and a rugged construction. The device is AEC-Q101
