Single IGBTs
insulated gate bipolar transistor HXY MOSFET IXGH40N120B2D1-HXY for solar inverters and energy storage systems
Product OverviewThe IXGH40N120B2D1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for UPS, EV-Chargers, Solar String Inverters, and Energy Storage Inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDOrigin: Shenzhen HuaXuanYang Electronic
Durable Industrial IGBT HXY MOSFET IKW60N60H3-HXY Featuring RoHS Compliance and TO-247 Package Design
Product OverviewThe IKW60N60H3 is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications requiring efficient power handling and fast switching capabilities.Product AttributesBrand: HUAXUANYANGManufacturer: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel:
650V 160A IGBT transistor HXY MOSFET IXXX160N65C4-HXY with low gate charge and low saturation voltage
Product OverviewThe IXXX160N65C4 is a 650V, 160A Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C and RoHS compliance, this device is suitable for demanding industrial uses.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: IXXX160N65C4Origin: Shenzhen
switching JIAENSEMI JNG40T120HIRU2 IGBT designed for PFC motor drives and soft switching applications
Product OverviewJIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as UPS, Motor drives, PFC, Portable power stations, and other soft switching applications. They are designed for reliable and rugged performance with fast switching capabilities.Product AttributesBrand: JIAENCertifications: Halogen Free and Green Devices AvailableTechnical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max.UnitsIGBT Electrical CharacteristicsBVCESVGE=
Power semiconductor HXY MOSFET DGTD120T40S1PT-HXY with enhanced switching performance and durability
Insulated Gate Bipolar Transistor DGTD120T40S1PTThe DGTD120T40S1PT is an Insulated Gate Bipolar Transistor (IGBT) utilizing advanced Trench and Field Stop (T-FS) technology. This design minimizes conduction losses, enhances switching performance, and improves avalanche energy. It is suitable for applications such as PTC, motor drives, and onboard chargers (OBC).Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: DGTD120T40S1PTOrigin: Shenzhen HuaXuanYang
high voltage IGBT HXY MOSFET APT35GP120BG-HXY suitable for EV chargers and solar power inverter systems
Product OverviewThe APT35GP120BG is an Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for UPS, EV-Chargers, Solar String Inverters, and Energy Storage Inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: APT35GP120BGOrigin: Shenzhen HuaXuanYang
Power semiconductor JIAENSEMI JNG15N120HS2 NPT IGBT 1200V 15A suitable for soft switching and energy systems
Product OverviewJIAEN NPT IGBTs offer lower losses and higher energy efficiency for applications such as IH (induction heating), UPS, general inverters, and other soft switching applications. This device features 1200V, 15A rating with a typical VCE(sat) of 2.2V. It provides high-speed switching, higher system efficiency, and soft current turn-off waveforms with square RBSOA using NPT technology.Product AttributesBrand: JIAENTechnology: NPT IGBTTechnical SpecificationsParamet
Industrial IGBT Infineon IKWH70N65WR6 with trenchstop 5 WR6 technology and enhanced creepage package
Product OverviewThe TRENCHSTOP 5 WR6 technology in an enhanced creepage and clearance package offers improved reliability against package contamination. This IGBT is optimized for PFC and welding applications, featuring stable temperature behavior, very low VCEsat, low Eoff, and easy parallel switching capability due to the positive temperature coefficient of VCEsat. It exhibits low temperature dependence of VCEsat and Esw.Product AttributesBrand: TRENCHSTOPTechnology:
Industrial power transistor JIAENSEMI JNG30N120HS3 for UPS and soft current turn off applications
Product OverviewThe JIAEN JNG30N120HS3 is an NPT IGBT designed for high efficiency and lower losses in applications such as induction heating (IH), UPS, and general inverters, particularly those employing soft switching techniques. It offers high-speed switching capabilities and soft current turn-off waveforms.Product AttributesBrand: JIAENTechnology: NPTTechnical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max.UnitsAbsolute Maximum RatingsVCES1200VVGES+30VIC (TC=25
Power semiconductor device Infineon IKD06N60RF TRENCHSTOP RC Series IGBT 600V 6A suitable for drives
Product DescriptionThe IKD06N60RF is a TRENCHSTOP RC-Series IGBT with an integrated diode, designed for hard switching applications up to 30 kHz. It offers space-saving advantages and features optimized switching losses (Eon, Eoff, Qrr), smooth switching performance for low EMI, and a maximum junction temperature of 175C. This IGBT is suitable for domestic and industrial drives, including compressors, pumps, and fans.Product AttributesBrand: InfineonTechnology: TRENCHSTOP RC
1200V 50A IGBT Device HXY MOSFET APT50GT120B2RG-HXY Suitable for UPS EV Chargers and Solar String Inverters
Product OverviewThe APT50GT120B2RG is a 1200V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for demanding applications such as UPS, EV-Chargers, and Solar String Inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: APT50GT120B2RGOrigin:
Power transistor JIAENSEMI JNG30T65FJS1 650V 30A insulated gate bipolar transistor for motor control
JNG30T65FJS1 IGBT The JNG30T65FJS1 is a 650V, 30A Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency motor control and general inverter applications. It offers high ruggedness performance with a 10s short circuit capability and excellent current sharing for parallel operation. Key features include a typical VCE(sat) of 1.7V at VGE=15V and IC=30A, making it suitable for demanding home appliance and motor drive systems. Product Attributes Brand: JIAEN
power transistor Infineon IKWH20N65WR6 with trenchstop 5 wr6 technology and enhanced creepage package
Product OverviewThe TRENCHSTOP 5 WR6 technology in an enhanced creepage and clearance package offers improved reliability against package contamination. It features a monolithic diode optimized for PFC and welding applications, stable temperature behavior, very low VCEsat, and low Eoff. The product also boasts easy parallel switching capability due to the positive temperature coefficient of VCEsat and low temperature dependence of VCEsat and Esw.Product AttributesBrand:
IGBT device HXY MOSFET IXYH120N65C3-HXY designed for string inverters UPS and electric vehicle charging systems
Product OverviewThe IXYH120N65C3 is an Insulated Gate Bipolar Transistor (IGBT) featuring high input impedance, low saturation voltage, and low switching losses, contributing to high efficiency. It offers rugged transient reliability and low EMI, making it suitable for industrial applications such as UPS, EV-charging, string inverters, and welding.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDOrigin: Shenzhen HuaXuanYang Electronics CO.,LTDModel: IXYH120N65C3Web
Power IGBT Module HXY MOSFET FGH75T65SHD-F155-HXY Suitable for UPS EV Chargers and Solar Inverters
Product OverviewThe FGH75T65SHD-F155 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for demanding applications such as UPS, EV-Chargers, Solar String Inverters, and Energy Storage Inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel:
Industrial EconoPACK3 Module Infineon FS300R12N3E7 with TRENCHSTOPIGBT7 and Integrated NTC Temperature Sensor
EconoPACK3 Module with TRENCHSTOPIGBT7 and Emitter Controlled 7 Diode and NTCThe EconoPACK3 module features TRENCHSTOPIGBT7 technology and an emitter-controlled 7 diode, designed for high power and thermal cycling capability. It offers low VCE,sat, overload operation up to 175C, and solder contact technology. The module integrates an NTC temperature sensor and a copper base plate with an Al2O3 substrate for low thermal resistance. This product is qualified for industrial
62mm C Series IGBT Module Infineon FF150R17KE4 with Emitter Controlled Diode and High Current Capability
Product OverviewThe FF150R17KE4 is a 62mm C-Series module featuring Trench/Fieldstop IGBT4 and Emitter Controlled Diode technology. Designed for high-power applications, it offers an extended operating temperature range, low VCEsat, and exceptional robustness. Its electrical and mechanical features make it suitable for demanding industrial uses.Product AttributesBrand: InfineonSeries: C-SeriesModel: FF150R17KE4Certifications: EN61140 (Basic insulation)Material (Baseplate):
Insulated Gate Bipolar Transistor HXY MOSFET IXXX160N65B4-HXY 650V 160A TO247P Package RoHS Compliant Device
Product OverviewThe IXXX160N65B4 is a 650V, 160A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C and RoHS compliance, this device is suitable for demanding power electronics applications.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDOrigin:
Infineon IGW50N65F5 650V IGBT Featuring High Speed Switching and Low Gate Charge for Power Conversion
Product OverviewThe IGW50N65F5 is a high-speed 650V IGBT from Infineon's TRENCHSTOPTM 5 technology. It offers best-in-class efficiency in hard switching and resonant topologies, with low gate charge (QG) and a maximum junction temperature of 175C. This IGBT is an ideal fit for boost converters when paired with SIC Schottky Diodes and is qualified according to JEDEC standards for industrial applications. It is Pb-free and RoHS compliant.Product AttributesBrand: InfineonTechnol
650V 75A IGBT Transistor HXY MOSFET STGWA75M65DF2-HXY for Performance in UPS and EV Charger Systems
Product OverviewThe STGWA75M65DF2 is a 650V, 75A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It offers easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for use in UPS, EV-Chargers, Solar String Inverters, and Energy Storage Inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: STGWA75M65DF2Package: TO
