Single IGBTs
High power density EasyPIM module Infineon FP25R12W2T7 with TRENCHSTOP IGBT7 and solder contact technology
EasyPIM Module with TRENCHSTOP IGBT7 and Emitter Controlled 7 Diode and NTC The EasyPIM module is designed for auxiliary inverters, air conditioning systems, and motor drives. It features TRENCHSTOP IGBT7 technology for low VCEsat and overload operation up to 175C. The module boasts a 2.5 kV AC 1min ...
650V 50A Power Transistor HXY MOSFET IGW50N65F5-HXY with Low Saturation Voltage and Low Gate Charge
Product OverviewThe HXY IGW50N65F5 is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in Vcesat, low EMI, low gate charge, and low saturation voltage. Its maximum ...
HXY MOSFET IXYH40N120B3D1 HXY 1200V 40A IGBT Suitable for UPS EV Charger and Solar Inverter Systems
Product Overview The IXYH40N120B3D1 is a 1200V, 40A Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is ...
High speed trenchstop igbt with low gate charge and low emi Infineon IKW40N120CS6 1200 volt 40 ampere device
Product OverviewThe Infineon IKW40N120CS6 is a sixth-generation, high-speed soft-switching TRENCHSTOPTM IGBT 6, featuring Trench and Fieldstop technology. It offers high efficiency in both hard switching and resonant topologies, easy paralleling due to a positive temperature coefficient in VCEsat, ...
switching transistor HXY MOSFET IXXH60N65B4-HXY designed for high pulsed collector current applications
Product OverviewThe IXXH60N65B4 is an Insulated Gate Bipolar Transistor (IGBT) utilizing advanced Trench and Field Stop (T-FS) technology. This design enhances performance by reducing conduction losses, improving switching speed, and increasing avalanche energy. It is suitable for applications ...
insulated gate bipolar transistor HXY MOSFET RGS00TS65DHRC11-HXY with trench and field stop technology
RGS00TS65DHRC11 Insulated Gate Bipolar Transistor The RGS00TS65DHRC11 is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction loss, improving switching characteristics, and ...
insulated gate bipolar transistor HXY MOSFET IXGH40N120B2D1-HXY for solar inverters and energy storage systems
Product OverviewThe IXGH40N120B2D1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is ...
Durable Industrial IGBT HXY MOSFET IKW60N60H3-HXY Featuring RoHS Compliance and TO-247 Package Design
Product OverviewThe IKW60N60H3 is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for ...
650V 160A IGBT transistor HXY MOSFET IXXX160N65C4-HXY with low gate charge and low saturation voltage
Product OverviewThe IXXX160N65C4 is a 650V, 160A Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low gate charge, and low saturation voltage. With a maximum junction temperatur...
switching JIAENSEMI JNG40T120HIRU2 IGBT designed for PFC motor drives and soft switching applications
Product OverviewJIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as UPS, Motor drives, PFC, Portable power stations, and other soft switching applications. They are designed for reliable and rugged performance with fast switching capabilities.Product ...
Power semiconductor HXY MOSFET DGTD120T40S1PT-HXY with enhanced switching performance and durability
Insulated Gate Bipolar Transistor DGTD120T40S1PTThe DGTD120T40S1PT is an Insulated Gate Bipolar Transistor (IGBT) utilizing advanced Trench and Field Stop (T-FS) technology. This design minimizes conduction losses, enhances switching performance, and improves avalanche energy. It is suitable for ...
high voltage IGBT HXY MOSFET APT35GP120BG-HXY suitable for EV chargers and solar power inverter systems
Product OverviewThe APT35GP120BG is an Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for ...
Power semiconductor JIAENSEMI JNG15N120HS2 NPT IGBT 1200V 15A suitable for soft switching and energy systems
Product OverviewJIAEN NPT IGBTs offer lower losses and higher energy efficiency for applications such as IH (induction heating), UPS, general inverters, and other soft switching applications. This device features 1200V, 15A rating with a typical VCE(sat) of 2.2V. It provides high-speed switching, ...
Industrial IGBT Infineon IKWH70N65WR6 with trenchstop 5 WR6 technology and enhanced creepage package
Product OverviewThe TRENCHSTOP 5 WR6 technology in an enhanced creepage and clearance package offers improved reliability against package contamination. This IGBT is optimized for PFC and welding applications, featuring stable temperature behavior, very low VCEsat, low Eoff, and easy parallel ...
Industrial power transistor JIAENSEMI JNG30N120HS3 for UPS and soft current turn off applications
Product OverviewThe JIAEN JNG30N120HS3 is an NPT IGBT designed for high efficiency and lower losses in applications such as induction heating (IH), UPS, and general inverters, particularly those employing soft switching techniques. It offers high-speed switching capabilities and soft current turn...
Power semiconductor device Infineon IKD06N60RF TRENCHSTOP RC Series IGBT 600V 6A suitable for drives
Product DescriptionThe IKD06N60RF is a TRENCHSTOP RC-Series IGBT with an integrated diode, designed for hard switching applications up to 30 kHz. It offers space-saving advantages and features optimized switching losses (Eon, Eoff, Qrr), smooth switching performance for low EMI, and a maximum ...
1200V 50A IGBT Device HXY MOSFET APT50GT120B2RG-HXY Suitable for UPS EV Chargers and Solar String Inverters
Product OverviewThe APT50GT120B2RG is a 1200V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is ...
Power transistor JIAENSEMI JNG30T65FJS1 650V 30A insulated gate bipolar transistor for motor control
JNG30T65FJS1 IGBT The JNG30T65FJS1 is a 650V, 30A Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency motor control and general inverter applications. It offers high ruggedness performance with a 10s short circuit capability and excellent current sharing for parallel operation. Key ...
power transistor Infineon IKWH20N65WR6 with trenchstop 5 wr6 technology and enhanced creepage package
Product OverviewThe TRENCHSTOP 5 WR6 technology in an enhanced creepage and clearance package offers improved reliability against package contamination. It features a monolithic diode optimized for PFC and welding applications, stable temperature behavior, very low VCEsat, and low Eoff. The product ...
IGBT device HXY MOSFET IXYH120N65C3-HXY designed for string inverters UPS and electric vehicle charging systems
Product OverviewThe IXYH120N65C3 is an Insulated Gate Bipolar Transistor (IGBT) featuring high input impedance, low saturation voltage, and low switching losses, contributing to high efficiency. It offers rugged transient reliability and low EMI, making it suitable for industrial applications such ...
