Single IGBTs
Durable power device HXY MOSFET FGH40T65SHD-F155-HXY optimized for EV charger solar inverter and UPS
Product OverviewThe FGH40T65SHD-F155 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, this device is suitable for UPS, EV-Charger, and Solar String Inverter applications.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDOrigin: Shenzhen
IGBT transistor JIAENSEMI JNG20T65FS1 650V 20A TO220F package suitable for motor control applications
JNG20T65FS1 IGBT The JIAEN Trench IGBTs offer lower losses and higher energy efficiency, making them ideal for applications such as motor control, general inverters, and other soft switching applications. Key features include a 650V, 20A rating, low VCE(sat) of 2.0V (typ.), high-speed switching, and soft current turn-off waveforms. Product Attributes Brand: JIAEN Product Series: Trench IGBTs Package Type: TO-220F Technical Specifications Parameter Symbol Test Conditions Min.
power switching device HXY MOSFET IHW30N135R5-HXY suitable for UPS EV chargers and solar inverters
Product OverviewThe IHW30N135R5 is an Insulated Gate Bipolar Transistor (IGBT) from HUAXUANYANG HXY ELECTRONICS CO.,LTD. It features easy paralleling capability due to its positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, it is suitable for applications such as UPS, EV-Chargers, Solar String Inverters, and Energy Storage Inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS
NPT IGBT 1200V 50A JIAENSEMI JNG50N120LS ideal for induction heating UPS and inverter applications
Product OverviewThe JNG50N120LS is a 1200V, 50A NPT IGBT from JIAEN Semiconductor, designed for high-speed switching applications. It offers lower losses and higher energy efficiency, making it suitable for Induction Heating (IH), UPS, general inverters, and other soft switching applications. Key features include a typical VCE(sat) of 2.1V at VGE=15V and IC=50A, soft current turn-off waveforms, and square RBSOA using NPT technology.Product AttributesBrand: JIAENOrigin: www
High temperature IGBT HXY MOSFET GWA40MS120DF4AG-HXY with 40 amp collector current and RoHS compliance
Product OverviewThe GWA40MS120DF4AG is an Insulated Gate Bipolar Transistor (IGBT) utilizing advanced Trench and Field Stop (T-FS) technology. This design enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is AEC-Q101 qualified and designed for high-temperature operation up to 175, making it suitable for demanding applications.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDOrigin: Shenzhen,
Power electronics MOSFET HXY MOSFET IGW50N60H3-HXY with easy paralleling and low EMI characteristics
Product OverviewThe IGW50N60H3 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for various power electronic applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. Its maximum junction temperature is 175C.Product AttributesBrand: HUAXUANYANG ELECTRONICS CO.,LTDModel: IGW50N60H3Package: TO-247Origin: Shenzhen HuaXuanYang Electronics CO.,LTDTechnical
insulated gate bipolar transistor HXY MOSFET IGW40N120H3-HXY for UPS EV charger and solar inverter
Product OverviewThe IGW40N120H3 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for UPS, EV-Charger, Solar String Inverter, and Energy Storage Inverter applications.Product AttributesBrand: HUAXUANYANGOrigin: Shenzhen HuaXuanYang Electronics CO.,LTDModel: IGW40N120H
650V 50A insulated gate bipolar transistor with low gate charge and easy paralleling HXY MOSFET SPT50N65F1A1T8TL-HXY
Product OverviewThe SPT50N65F1A1T8TL is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. Its maximum junction temperature is 175C.Product AttributesBrand: HUAXUANYANG ELECTRONICS CO.,LTDModel: SPT50N65F1A1T8TLPackage: TO-247Origin: Shenzhen HuaXuanYang Electronics CO.,LTDPacking:
EconoDUAL3 IGBT module Infineon FF600R12ME4 with Trench Fieldstop IGBT4 and Emitter Controlled Diode
Product OverviewThe FF600R12ME4 is an EconoDUAL3 IGBT module featuring Trench/Fieldstop IGBT4 and Emitter Controlled Diode with NTC. It offers low VCEsat with a positive temperature coefficient, high power density, and an isolated base plate. Ideal for high power converters, motor drives, servo drives, UPS systems, and wind turbines.Product AttributesBrand: Infineon (implied by module type and datasheet format)Model: FF600R12ME4Module Type: EconoDUAL3IGBT Technology: Trench
High speed IGBT Infineon IKW40N65H5 650 volt 40 amp featuring TRENCHSTOP 5 and RAPID 1 diode for switching
Product OverviewThe IKP40N65H5 and IKW40N65H5 are high-speed 5th generation IGBTs featuring TRENCHSTOPTM 5 technology, copacked with RAPID 1 fast and soft antiparallel diodes. These devices offer best-in-class efficiency in hard switching and resonant topologies and serve as plug-and-play replacements for previous generation IGBTs. With a 650V breakdown voltage, low gate charge, and a maximum junction temperature of 175C, they are qualified according to JEDEC for target
650V 50A Insulated Gate Bipolar Transistor HXY MOSFET AIGW50N65H5-HXY for UPS EV Chargers and Solar Inverters
AIGW50N65H5 Insulated Gate Bipolar TransistorThe AIGW50N65H5 is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for use in UPS, EV-Chargers, and Solar String Inverters.Product AttributesBrand: HUAXUANYANG ELECTRONICS CO.,LTDModel: AIGW50N65H5Package: TO
power switching device JIAENSEMI JNG40T120HS IGBT with square RBSOA and soft current turn off waveform
JNG40T120HS IGBT JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as IH (induction heating), UPS, general inverters, and other soft switching applications. They feature high-speed switching, higher system efficiency, soft current turn-off waveforms, and a square RBSOA. Product Attributes Brand: JIAEN Model: JNG40T120HS Package: TO247 Technical Specifications Parameter Condition Min. Typ. Max. Units Absolute Maximum Ratings Collector
HXY MOSFET APT68GA60B-HXY Featuring TO-247 Package and High Collector Current for Power Applications
Product OverviewThe APT68GA60B is an Insulated Gate Bipolar Transistor (IGBT) from HUAXUANYANG HXY ELECTRONICS CO.,LTD. It offers easy paralleling capability due to its positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, this device is suitable for applications such as UPS, EV-Chargers, and Solar String Inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDOrigin:
High speed Infineon IKW50N60H3 600V 100A IGBT with low VCEsat and maximum junction temperature 175C
Product OverviewThe IKW50N60H3 is a high-speed IGBT in Trench and Fieldstop technology, featuring a soft, fast recovery anti-parallel diode. This third-generation device offers very low VCEsat, low EMI, and a maximum junction temperature of 175C. It is qualified according to JEDEC for target applications and is Pb-free and RoHS compliant. Ideal for high switching frequency applications such as uninterruptible power supplies and welding converters.Product AttributesBrand:
Collector Current 40 Amp HXY MOSFET MBQ40T120QESTH HXY IGBT with Improved Switching Characteristics
Product OverviewThe MBQ40T120QESTH is an Insulated Gate Bipolar Transistor (IGBT) utilizing advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction loss, improving switching characteristics, and increasing avalanche energy. It is designed for applications requiring high reliability and efficient power management.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: MBQ40T120QESTHTechnology: Trench and Field
High voltage insulated gate bipolar transistor HXY MOSFET NGTG35N65FL2WG-HXY with easy paralleling and low gate charge
Product OverviewThe NGTG35N65FL2WG is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It offers easy paralleling capability due to its positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, this device is suitable for UPS, EV-Charger, and Solar String Inverter applications.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDOrigin: Shenzhen
Infineon IGW40N60TP 600V IGBT featuring TRENCHSTOP technology low EMI and short tail current for converters
Product OverviewThe IGW40N60TP is a 600V DuoPack IGBT from Infineon's TRENCHSTOPTM Performance series. It utilizes TRENCHSTOPTM technology, offering very low VCEsat, low turn-off losses, short tail current, and low EMI. This IGBT is qualified according to JEDEC for target applications and is RoHS compliant. It is suitable for applications such as drives, solar inverters, uninterruptible power supplies, and converters with medium switching frequency.Product AttributesBrand:
IGBT Module 1200V 75A JIAENSEMI GL75HF120F1UR1 Featuring Planar Field Stop Technology for Industrial
Product OverviewThe GL75HF120F1UR1 is a 1200V, 75A IGBT half-bridge module featuring Planar Field-stop Technology for high RBSOA capability and low turn-off losses. It is ideal for applications such as inductive heating, welding, and high-frequency switching.Product AttributesBrand: JIAEN Semiconductor Co., LtdMaterial of Module Baseplate: CuInternal Isolation: Al2O3 (basic insulation, class 1, IEC 61140)Technical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitsNote
1200V 140A IGBT low switching losses low conduction loss HXY MOSFET IKQ140N120CH7XKSA1-HXY ideal for EV charging applications
Product OverviewThe IKQ140N120CH7XKSA1 is a 1200V, 140A IGBT designed for high-efficiency applications. It features high input impedance, low switching losses, low saturation voltage (VCE(SAT)), and low conduction loss. This device is copacked with a fast recovery diode, offering rugged transient reliability and low EMI. It is suitable for applications such as string solar inverters and EV-charging.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: IKQ140N120C
High speed IGBT JIAENSEMI JNG40T65HS1 650V 40A suitable for inverter and motor control applications
Product OverviewJIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as Motor control, general inverter, and other soft switching applications. This IGBT features 650V, 40A capability with a typical VCE(sat) of 2.0V at VGE=15V and IC=40A. It provides high-speed switching, higher system efficiency, soft current turn-off waveforms, and a square RBSOA.Product AttributesBrand: JIAENProduct Series: JNG40T65HS1Package Outline: TO247Technical
