Single IGBTs
High Voltage Collector Emitter HXY MOSFET IKW40N120CS6-HXY IGBT with Halogen Free and Green Versions
Product OverviewThe IKW40N120CS6 is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is ...
High power Infineon FF75R12RT4 IGBT module with low switching losses and extended temperature range
Product OverviewThe FF75R12RT4 is a 34mm IGBT module featuring a fast Trench/Fieldstop IGBT4 and an Emitter Controlled 4 diode. It is designed for high-power applications, motor drives, and UPS systems, offering advantages such as extended operating temperature, low switching losses, and low VCEsat ...
power switching solution HXY MOSFET STGWA40M120DF3-HXY IGBT with 1200V voltage and 40A current rating
Product OverviewThe STGWA40M120DF3 is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is ...
Infineon IGW08T120 IGBT featuring Pb free lead plating and temperature stable behavior for power electronics
Product OverviewThe IGW08T120 is a Low Loss IGBT from Infineon's TrenchStop Series, utilizing TrenchStop and Fieldstop technology for 1200V applications. It offers short circuit withstand time of 10s and is designed for frequency converters and uninterrupted power supplies. Key advantages include ...
IGBT module Infineon IGW30N65L5 650V 30A low VCEsat transistor suitable for solar inverter systems
Product OverviewThe IGW30N65L5 is a 650V IGBT from Infineon's TRENCHSTOP 5 technology, offering a low VCE(sat) for improved efficiency. This fifth-generation IGBT provides a best-in-class tradeoff between conduction and switching losses, featuring a maximum junction temperature of 175C. It is ...
IGBT Device HXY MOSFET AOK50B65H1 650V 50A Suitable for UPS EV Chargers and Solar String Inverters
Product OverviewThe AOK50B65H1 is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for applications requiring easy paralleling capability due to its positive temperature coefficient in VCESAT. It offers low EMI, low gate charge, and low saturation voltage, making it suitable for UPS, EV...
Insulated Gate Bipolar Transistor HXY MOSFET DGTD65T50S1PT-HXY with Halogen Free and RoHS Compliance
Insulated Gate Bipolar Transistor DGTD65T50S1PTThe DGTD65T50S1PT is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing ...
Power semiconductor device JIAENSEMI JNG20T65KS trench IGBT with 650 volt collector emitter voltage
Product OverviewThe JNG20T65KS is a JIAEN Trench IGBT offering lower losses and higher energy efficiency. It is designed for applications such as motor control, general inverters, and other soft switching applications, featuring high-speed switching and soft current turn-off waveforms.Product ...
EconoDUAL3 Infineon FF600R17ME4 IGBT Module Featuring Low VCEsat and Positive Temperature Coefficient
Infineon EconoDUAL3 Module FF600R17ME4 The FF600R17ME4 is an EconoDUAL3 module featuring Trench/Fieldstop IGBT4 and Emitter Controlled diode with NTC. It offers high current density, low VCEsat with a positive temperature coefficient, and high power density with an isolated base plate. This module ...
Industrial Power Module Infineon FF900R12ME7B11 with EconoDUAL3 Packaging and TRENCHSTOP IGBT7 Technology
EconoDUAL3 Module with TRENCHSTOP IGBT7 and Emitter Controlled 7 Diode and NTCThe EconoDUAL3 module features TRENCHSTOP IGBT7 and Emitter Controlled 7 diode technology, offering high power density and an integrated temperature sensor. This module is designed for high-performance applications ...
Trench IGBT JIAENSEMI JNG30T65HS1 with 30A Diode Continuous Forward Current and High Speed Switching
Product OverviewThe JNG30T65HS1 is a Trench IGBT from JIAEN Semiconductor, designed for lower losses and higher energy efficiency. It features high-speed switching and soft current turn-off waveforms, making it suitable for applications requiring higher system efficiency.Product AttributesBrand: ...
IGBT Power Transistor 1200V 50A HXY MOSFET STGYA50H120DF2-HXY Ideal for Solar Inverter UPS and EV Charger
Product OverviewThe STGYA50H120DF2 is a 1200V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage, making it ...
1200V 40A HXY MOSFET IKW40N120H3-HXY IGBT featuring fast switching low VCEsat ideal for PTC and motor drive applications
Product OverviewThe IKW40N120H3 is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed ...
Infineon FS75R12W2T7 B11 EasyPACK module designed for high power density and operation in motor drives
Product OverviewThe FS75R12W2T7_B11 EasyPACK module features TRENCHSTOP IGBT7 and Emitter Controlled 7 Diode with PressFIT technology and an integrated NTC thermistor. It offers low VCEsat, overload operation up to 175C, and a compact design with high power density. Suitable for auxiliary inverters, ...
IGBT 650V 75A Power Transistor HXY MOSFET FGH75T65SQD-F155-HXY for UPS EV Chargers Solar Inverters
Product OverviewThe FGH75T65SQD-F155 is a 650V, 75A Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It offers easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is ...
Industrial grade IGBT Infineon IKW50N65H5 with 80 ampere collector current and low saturation voltage
Product OverviewThe IKW50N65H5 is a high-speed fifth-generation IGBT from Infineon's TRENCHSTOPTM 5 technology, copacked with a RAPID 1 fast and soft antiparallel diode. It offers best-in-class efficiency in hard switching and resonant topologies, serving as a plug-and-play replacement for previous ...
High current IGBT JIAENSEMI JNG25T65AI offering 25A continuous collector current at 100 degrees Celsius
JNG25T65AI IGBTJIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as motor control, general inverters, and other soft switching applications. They are designed for high-speed switching and provide higher system efficiency with soft current turn-off waveforms and ...
Industrial Reverse Conducting IGBT Infineon IHW40N65R6 with Low EMI and Tight Parameter Distribution
Reverse-Conducting IGBT with monolithic body diodeThis Reverse-Conducting IGBT offers a complete product spectrum with PSpice models available. It features easy parallel switching capability due to its positive temperature coefficient in VCEsat, high ruggedness, and stable temperature behavior. The ...
650V 50A Insulated Gate Bipolar Transistor HXY MOSFET STGWA50M65DF2-HXY with Low Gate Charge and Low EMI
Product OverviewThe STGWA50M65DF2 is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. Its maximum ...
High speed switching IGBT JIAENSEMI JNG40T65AI designed for soft switching and motor control systems
Product OverviewThe JNG40T65AI Trench IGBT from JIAEN Semiconductor offers advanced performance with 650V voltage rating and 40A continuous collector current. It features low conduction losses, high speed switching capabilities, and soft current turn-off waveforms, contributing to higher system ...
