Single IGBTs
650V 20A IGBT module JIAENSEMI JNG20T65HS1 TO247 package for motor control and inverter applications
Product OverviewJIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as Motor control, general inverter, and other soft switching applications. The JNG20T65HS1 features 650V, 20A capability with a typical VCE(sat) of 2.0V at VGE=15V and IC=20A, providing high-speed switching and higher system efficiency with soft current turn-off waveforms and square RBSOA.Product AttributesBrand: JIAENProduct Series: JNG20T65HS1Package Type: TO-247Technica
TrenchStop series IGBT Infineon IKW50N60T 600V 50A with low EMI and rugged temperature stable design
Product DescriptionThe IKW50N60T from Infineon's TrenchStop Series is a Low Loss DuoPack featuring an IGBT in Trench and Fieldstop technology with a soft, fast recovery EmCon HE diode. It offers a very low VCE(sat) of 1.5V (typ.) and a maximum junction temperature of 175C, with a short circuit withstand time of 5s. Designed for frequency converters and uninterrupted power supply applications, its Trench and Fieldstop technology for 600V applications provides very tight
High speed switching JIAENSEMI JNG75T120LZS1 IGBT module designed for soft switching and energy systems
JNG75T120LZS1 IGBT JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as motor control, general inverters, and other soft switching applications. Key features include 1200V, 75A rating, high-speed switching, higher system efficiency, soft current turn-off waveforms, and square RBSOA. Product Attributes Brand: JIAEN Product Name: JNG75T120LZS1 Package: TO-264 Technical Specifications Parameter Test Conditions Min. Typ. Max. Units Absolute
1200V 450A Trench FS IGBT Half Bridge Module JIAENSEMI GN450HF120T3SS1 for inverter and servo drives
Product OverviewThe JIAEN GN450HF120T3SS1 is a 1200V 450A Trench FS IGBT Half Bridge Module designed for general inverter and soft switching applications. It offers lower losses and higher energy efficiency, making it suitable for motor drives, AC and DC servo drive amplifiers, and power supplies. Key features include a typical VCE(sat) of 1.65V, soft turn-off capability, a positive VCE(on) temperature coefficient, and ease of paralleling.Product AttributesBrand: JIAENModel:
1200V 40A IGBT transistor JIAENSEMI JNG40T120HJS1 for motor control and inverter power applications
Product OverviewJIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as motor control, general inverters, and other soft switching applications. This IGBT features 1200V, 40A rating, a typical VCE(sat) of 1.7V, high-speed switching, and soft current turn-off waveforms.Product AttributesBrand: JIAENOrigin: www.jiaensemi.comTechnical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max.UnitsAbsolute Maximum RatingsCollector-Emitter
TrenchStop Series IGBT Infineon IKW30N60T featuring EmCon HE diode and short circuit withstand time for power supplies
Product OverviewThe IKW30N60T from Infineon's TrenchStop Series is a low-loss DuoPack IGBT featuring Trench and Fieldstop technology. It offers a very low VCE(sat) of 1.5V (typ.), a maximum junction temperature of 175C, and a short circuit withstand time of 5s. Designed for frequency converters and uninterruptible power supplies, its advanced technology provides tight parameter distribution, high ruggedness, temperature-stable behavior, very high switching speed, and low EMI.
Robust Infineon FF150R12KS4 IGBT module featuring fast switching and low losses for power conversion
Product OverviewThe FF150R12KS4 is a 62mm C-Series IGBT module featuring a fast IGBT2 for high-frequency switching applications. It offers high short-circuit capability, low switching losses, and exceptional robustness with a positive temperature coefficient for VCEsat. Ideal for motor drives, medical applications, resonant inverters, servo drives, and UPS systems.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Copper baseplate, Al2O3 internal isolationCo
rugged JIAENSEMI JNG50T120HIMU2 trench IGBT with fast switching and positive temperature coefficient
Product OverviewJIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as UPS, Motor drives, PFC, Portable power stations, and other soft switching applications. These devices are reliable, rugged, and feature a positive temperature coefficient and fast switching capabilities.Product AttributesBrand: JIAENCertifications: Halogen Free and Green Devices AvailableTechnical SpecificationsParameterValueUnitsConditionsAbsolute Maximum RatingsVCES
PrimePACK2 IGBT Module Infineon FF900R12IP4 with Trench Fieldstop IGBT4 and Emitter Controlled Diode
Product OverviewThe FF900R12IP4 is a PrimePACK2 module featuring Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode with NTC. It offers extended operation temperature, high DC stability, and excellent short circuit capability. Ideal for high power applications such as auxiliary inverters, motor drives, traction drives, UPS systems, and wind turbines.Product AttributesBrand: Infineon (implied by datasheet format)Package Type: PrimePACK2Certifications: CTI > 400Technical
Industrial grade 650V IGBT Infineon IKW75N65EL5 with low VCEsat and RAPID 1 antiparallel diode technology
Product OverviewThe IKW75N65EL5 is a 650V DuoPack IGBT from Infineon's Low VCE(sat) series, featuring TRENCHSTOPTM 5 technology copacked with a RAPID 1 fast and soft antiparallel diode. This IGBT offers a best-in-class tradeoff between conduction and switching losses due to its very low collector-emitter saturation voltage (VCEsat). It is designed for industrial applications requiring high performance and reliability, with a maximum junction temperature of 175C and qualified
TrenchStop 2nd generation Infineon IKW25N120T2 1200V IGBT with rugged and temperature stable design
IKW25N120T2 TrenchStop 2nd generation Series The IKW25N120T2 is a 1200V IGBT from Infineon's TrenchStop 2nd generation series, designed for high-performance applications such as frequency converters and uninterrupted power supplies. It features a short circuit withstand time of 10s and offers excellent ruggedness and temperature-stable behavior. The device is easy to parallel due to a positive temperature coefficient in VCE(sat), low EMI, low gate charge, and a very soft,
Trench and Fieldstop IGBT Infineon IKW20N60T Power Semiconductor with Soft Fast Recovery EmCon HE Diode
Product OverviewThe TrenchStop Series IKP20N60T, IKB20N60T, and IKW20N60T are low-loss DuoPack power semiconductors featuring IGBTs in Trench and Fieldstop technology with a soft, fast recovery EmCon HE diode. These devices offer very low VCE(sat) of 1.5V (typ.), a maximum junction temperature of 175C, and a short circuit withstand time of 5s. They are designed for applications such as frequency converters and uninterrupted power supplies. The Trench and Fieldstop technology
Motor control IGBT JIAENSEMI JNG10T65DJS1 650V 10A designed for high speed switching applications
JNG10T65DJS1 IGBTThe JNG10T65DJS1 is a 650V, 10A IGBT designed for high-speed switching applications. It offers high system efficiency, particularly beneficial for motor control, and features soft current turn-off waveforms. This IGBT is suitable for motor drives and home appliances.Product AttributesBrand: JIAEN Semiconductor Co., LtdModel: JNG10T65DJS1Package: TO-252-2LTechnical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max.UnitsAbsolute Maximum RatingsVCES650VVGE
Low forward voltage reverse conducting diode integrated in Infineon IHW30N65R5 IGBT for power control
Product DescriptionThe IHW30N65R5 is a Reverse conducting IGBT from Infineon's Resonant Switching Series, featuring a powerful monolithic reverse-conducting diode with a low forward voltage. It utilizes TRENCHSTOPTM technology for tight parameter distribution, high ruggedness, stable temperature behavior, low VCEsat and Eoff, and easy parallel switching. This IGBT is designed for applications requiring low EMI and is qualified according to JESD-022. It is Pb-free and RoHS
High Voltage Collector Emitter HXY MOSFET IKW40N120CS6-HXY IGBT with Halogen Free and Green Versions
Product OverviewThe IKW40N120CS6 is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications requiring high reliability and efficient power handling. The device features a positive temperature coefficient, fast switching speeds, low VCE(sat), and is AEC
High power Infineon FF75R12RT4 IGBT module with low switching losses and extended temperature range
Product OverviewThe FF75R12RT4 is a 34mm IGBT module featuring a fast Trench/Fieldstop IGBT4 and an Emitter Controlled 4 diode. It is designed for high-power applications, motor drives, and UPS systems, offering advantages such as extended operating temperature, low switching losses, and low VCEsat with a positive temperature coefficient. The module has an isolated base plate and a standard housing.Product AttributesModule Label Code: FF75R12RT4Date of Publication: 2013-11
power switching solution HXY MOSFET STGWA40M120DF3-HXY IGBT with 1200V voltage and 40A current rating
Product OverviewThe STGWA40M120DF3 is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications requiring high reliability and efficient power handling.Product AttributesBrand: HUAXUANYANGModel: STGWA40M120DF3Origin: Shenzhen HuaXuanYang Electronics CO.
IGBT module Infineon IGW30N65L5 650V 30A low VCEsat transistor suitable for solar inverter systems
Product OverviewThe IGW30N65L5 is a 650V IGBT from Infineon's TRENCHSTOP 5 technology, offering a low VCE(sat) for improved efficiency. This fifth-generation IGBT provides a best-in-class tradeoff between conduction and switching losses, featuring a maximum junction temperature of 175C. It is qualified according to JEDEC for target applications and is Pb-free and RoHS compliant. Ideal for demanding applications such as uninterruptible power supplies, solar photovoltaic
Infineon IGW08T120 IGBT featuring Pb free lead plating and temperature stable behavior for power electronics
Product OverviewThe IGW08T120 is a Low Loss IGBT from Infineon's TrenchStop Series, utilizing TrenchStop and Fieldstop technology for 1200V applications. It offers short circuit withstand time of 10s and is designed for frequency converters and uninterrupted power supplies. Key advantages include very tight parameter distribution, high ruggedness, temperature-stable behavior, easy parallel switching capability due to positive temperature coefficient in VCE(sat), low EMI, and
IGBT Device HXY MOSFET AOK50B65H1 650V 50A Suitable for UPS EV Chargers and Solar String Inverters
Product OverviewThe AOK50B65H1 is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for applications requiring easy paralleling capability due to its positive temperature coefficient in VCESAT. It offers low EMI, low gate charge, and low saturation voltage, making it suitable for UPS, EV-Chargers, Solar String Inverters, and Energy Storage Inverters. The device features a maximum junction temperature of 175C.Product AttributesBrand: HUAXUANYANG ELECTRONICS CO.
