Single IGBTs

quality Powerful 62mm C Series IGBT Module Infineon FF400R17KE4 with Trench Fieldstop IGBT4 Technology factory

Powerful 62mm C Series IGBT Module Infineon FF400R17KE4 with Trench Fieldstop IGBT4 Technology

Product OverviewThe FF400R17KE4 is a 62mm C-Series IGBT module featuring Trench/Fieldstop IGBT4 and Emitter Controlled 3 diode technology. It offers an extended operating temperature, low VCEsat with a positive temperature coefficient, and high robustness, making it suitable for high-power converters, motor drives, UPS systems, and wind turbines. The module boasts excellent electrical and mechanical features, including high insulation strength, large creepage and clearance

quality 1200V 15A IGBT device JIAENSEMI JNG15T120HS suitable for energy power inverters and induction heating applications factory

1200V 15A IGBT device JIAENSEMI JNG15T120HS suitable for energy power inverters and induction heating applications

Product OverviewJIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as IH (induction heating), UPS, general inverters, and other soft switching applications. The JNG15T120HS features 1200V, 15A, high-speed switching, higher system efficiency, soft current turn-off waveforms, and square RBSOA.Product AttributesBrand: JIAENOrigin: Semiconductor Co., LtdTechnical SpecificationsSymbolParameterValueUnitsNotesVCESCollector-Emitter Voltage1200VVG

quality EconoPACK3 module featuring Infineon FS200R12N3T7 with TRENCHSTOPIGBT7 emitter controlled diode and NTC sensor factory

EconoPACK3 module featuring Infineon FS200R12N3T7 with TRENCHSTOPIGBT7 emitter controlled diode and NTC sensor

EconoPACK3 Module with TRENCHSTOPIGBT7 and Emitter Controlled 7 Diode and NTCThe EconoPACK3 module integrates TRENCHSTOPIGBT7 technology with an emitter-controlled 7 diode and an NTC temperature sensor. This module is designed for high power and thermal cycling capabilities, featuring a low VCE,sat for efficient operation. It is qualified for industrial applications and suitable for overload operation up to 175C. Key mechanical features include a solder contact technology, an

quality Power transistor JIAENSEMI JNG15T65PS1 650V 15A IGBT module designed for motor control and inverters factory

Power transistor JIAENSEMI JNG15T65PS1 650V 15A IGBT module designed for motor control and inverters

Product OverviewJIAEN Trench IGBTs offer lower losses and higher energy efficiency, suitable for applications such as motor control, general inverters, and other soft switching applications. This IGBT features 650V, 15A rating, a typical VCE(sat) of 1.9V, high-speed switching capabilities, and soft current turn-off waveforms with square RBSOA.Product AttributesBrand: JIAENModel: JNG15T65PS1Package: TO-220CTechnical SpecificationsParameterSymbolConditionsMin.Typ.Max.UnitsColle

quality Power semiconductor device Infineon IKW75N65ES5 featuring trenchstop 5 technology and rapid 1 diode factory

Power semiconductor device Infineon IKW75N65ES5 featuring trenchstop 5 technology and rapid 1 diode

Product OverviewThe Infineon TRENCHSTOPTM 5 IKW75N65ES5 is a high-speed, soft-switching IGBT designed for hard and soft switching applications. It features S5 technology for smooth switching, a very low VCEsat of 1.42V at nominal current, and a 650V breakdown voltage. This IGBT is copacked with a full current-rated RAPID 1 fast and soft antiparallel diode, offering a plug-and-play replacement for previous generation IGBTs. It is qualified according to JEDEC for target

quality 1200V 50A IGBT half bridge module JIAENSEMI GL50HF120T1UA1 with high RBSOA and low turn off losses factory

1200V 50A IGBT half bridge module JIAENSEMI GL50HF120T1UA1 with high RBSOA and low turn off losses

Product OverviewThe GL50HF120T1UA1 is a 1200V, 50A IGBT half-bridge module featuring Trench Field-stop Technology for high performance and reliability. It offers a low VCE(sat) of 2.1V (typ.), high RBSOA capability, and low turn-off losses. This module is ideal for applications such as welders, power supplies, UPS, inverters, and industrial motor drivers.Product AttributesBrand: JIAEN SemiconductorOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications:

quality 1200V 25A Trench IGBT JIAENSEMI JNG25T120HS designed for high speed switching induction heating UPS factory

1200V 25A Trench IGBT JIAENSEMI JNG25T120HS designed for high speed switching induction heating UPS

Product OverviewThe JNG25T120HS is a 1200V, 25A Trench IGBT from JIAEN Semiconductor designed for high-speed switching applications. It offers lower losses, higher system efficiency, soft current turn-off waveforms, and square RBSOA, making it ideal for induction heating (IH), UPS, general inverters, and other soft switching applications.Product AttributesBrand: JIAENOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical

quality EconoDUAL3 IGBT Module Infineon FF225R12ME4 with Trench Fieldstop IGBT4 and Emitter Controlled HE Diode factory

EconoDUAL3 IGBT Module Infineon FF225R12ME4 with Trench Fieldstop IGBT4 and Emitter Controlled HE Diode

FF225R12ME4 IGBT ModuleThe FF225R12ME4 is an EconoDUAL3 module featuring Trench/Fieldstop IGBT4 and Emitter Controlled HE diode with NTC. It offers low VCEsat and operates at Tvj op = 150C. This module is suitable for applications such as motor drives, servo drives, UPS systems, and wind turbines.Product AttributesBrand: EconoDUAL3Certifications: UL approved (E83335)Technical SpecificationsParameterValueUnitNotesIGBT, InverterCollector-emitter voltage1200VVCES, Tvj =

quality power switching solution Infineon IKA08N65H5 650V IGBT with TRENCHSTOP 5 technology and RAPID 1 diode factory

power switching solution Infineon IKA08N65H5 650V IGBT with TRENCHSTOP 5 technology and RAPID 1 diode

Product DescriptionThe IKA08N65H5 is a high-speed 5th generation IGBT from Infineon, featuring TRENCHSTOPTM 5 technology and copacked with a RAPID 1 fast and soft antiparallel diode. It offers best-in-class efficiency in hard switching and resonant topologies, serving as a plug-and-play replacement for previous generation IGBTs. With a 650V breakdown voltage and low QG, it is designed for demanding applications.Product AttributesBrand: InfineonTechnology: TRENCHSTOPTM 5,

quality Trench IGBT device JIAENSEMI JNG25T120HJS1 offering soft current turn off and square RBSOA waveforms factory

Trench IGBT device JIAENSEMI JNG25T120HJS1 offering soft current turn off and square RBSOA waveforms

Product OverviewJIAEN Trench IGBTs offer lower losses and higher energy efficiency, featuring soft current turn-off waveforms and square RBSOA. They are designed for applications such as motor control, general inverters, and other soft switching applications.Product AttributesBrand: JIAENOrigin: www.jiaensemi.comTechnical SpecificationsSymbolParameterTest ConditionsMin.Typ.Max.UnitsVCESCollector-Emitter Voltage1200VVGESGate-Emitter Voltage+ 20VICContinuous Collector Current

quality Durable Infineon IKW75N65EH5 IGBT module with 650 volt rating and 75 amp collector current capability factory

Durable Infineon IKW75N65EH5 IGBT module with 650 volt rating and 75 amp collector current capability

Product OverviewThe IKW75N65EH5 is a high-speed 5th generation IGBT from Infineon, featuring TRENCHSTOPTM 5 technology. It offers best-in-class efficiency in hard switching and resonant topologies, and serves as a plug-and-play replacement for previous generation IGBTs. This device is copacked with a full-rated RAPID 1 fast and soft antiparallel diode, making it suitable for demanding applications.Product AttributesBrand: InfineonTechnology: TRENCHSTOPTM 5Diode Type: RAPID 1

quality Reverse conducting igbt Infineon IHW30N135R5 with trenchstop technology offering low emi and stable temperature performance factory

Reverse conducting igbt Infineon IHW30N135R5 with trenchstop technology offering low emi and stable temperature performance

Product OverviewThe IHW30N135R5 is a Reverse Conducting IGBT from Infineon's Resonant Switching Series, featuring a powerful monolithic body diode with low forward voltage optimized for soft commutation. It utilizes TRENCHSTOP technology for excellent ruggedness, stable temperature behavior, low VCEsat, and easy parallel switching. This IGBT is designed for applications requiring low EMI and is qualified according to JESD-022. It is Pb-free, RoHS compliant, and halogen-free

quality High Speed Switching Infineon IKW50N65F5 IGBT 650V 50A with TRENCHSTOP 5 Technology and RAPID 1 Diode factory

High Speed Switching Infineon IKW50N65F5 IGBT 650V 50A with TRENCHSTOP 5 Technology and RAPID 1 Diode

Product OverviewThe IKW50N65F5 is a high-speed 5 FAST IGBT from Infineon's TRENCHSTOPTM 5 technology, copacked with a RAPID 1 fast and soft antiparallel diode. Designed for high-speed switching applications, it offers best-in-class efficiency in hard switching and resonant topologies. This device features a 650V breakdown voltage, low gate charge, and a maximum junction temperature of 175C, making it suitable for demanding industrial applications.Product AttributesBrand:

quality High voltage NPT IGBT JIAENSEMI JNG15N120AI 1200V 15A transistor for energy soft switching and inverter factory

High voltage NPT IGBT JIAENSEMI JNG15N120AI 1200V 15A transistor for energy soft switching and inverter

Product OverviewThe JIAEN JNG15N120AI is an NPT IGBT designed for high-speed switching applications. It offers lower losses and higher energy efficiency, making it suitable for induction heating (IH), UPS, general inverters, and other soft switching applications. Key features include a 1200V voltage rating, 15A current capability, soft current turn-off waveforms, and square RBSOA using NPT technology.Product AttributesBrand: JIAENProduct Line: NPT IGBTTechnical Specifications

quality Industrial grade igbt Infineon IHW30N160R5 with low emi and temperature stable trenchstop technology factory

Industrial grade igbt Infineon IHW30N160R5 with low emi and temperature stable trenchstop technology

Product OverviewThe IHW30N160R5 is a Resonant Switching Series Reverse conducting IGBT featuring a powerful monolithic body diode with low forward voltage. It utilizes TRENCHSTOPTM technology for very tight parameter distribution, high ruggedness, temperature stable behavior, low VCEsat, and easy parallel switching capability. This IGBT offers low EMI and is Pb-free, RoHS compliant, and halogen-free. It is qualified for industrial applications.Product AttributesBrand:

quality Trench Fieldstop IGBT4 module Infineon FS3L25R12W2H3B11 with Al2O3 substrate and low switching losses factory

Trench Fieldstop IGBT4 module Infineon FS3L25R12W2H3B11 with Al2O3 substrate and low switching losses

Product OverviewThe FS3L25R12W2H3_B11 is an EasyPACK module featuring fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diodes with PressFIT and NTC. It is designed for 3-level and solar applications, offering high speed, low inductive design, and low switching losses. The module boasts an Al2O3 substrate with low thermal resistance, a compact design, and robust PressFIT connection technology with integrated mounting clamps.Product AttributesBrand: InfineonProduct Line:

quality High speed IGBT module JIAENSEMI JNG15T65FS1 650V 15A for motor control and soft switching inverters factory

High speed IGBT module JIAENSEMI JNG15T65FS1 650V 15A for motor control and soft switching inverters

Product OverviewJIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as motor control, general inverters, and other soft switching applications. The JNG15T65FS1 features 650V, 15A rating with a typical VCE(sat) of 1.9V. It provides high-speed switching, higher system efficiency, soft current turn-off waveforms, and square RBSOA.Product AttributesBrand: JIAENModel: JNG15T65FS1Package: TO-220FTechnical SpecificationsParameterSymbolConditionsM

quality Soft Switching Trench IGBT JIAENSEMI JNG15T120HJS1 with 1200V Voltage Rating and Low On State Voltage factory

Soft Switching Trench IGBT JIAENSEMI JNG15T120HJS1 with 1200V Voltage Rating and Low On State Voltage

Product OverviewThe JNG15T120HJS1 is a Trench IGBT from JIAEN Semiconductor, designed for high-speed switching applications. It offers lower losses and higher energy efficiency, making it suitable for motor control, general inverters, and soft switching applications. Key features include a 1200V voltage rating, a typical on-state voltage of 1.7V, and soft current turn-off waveforms.Product AttributesBrand: JIAENOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedC

quality IGBT module Infineon FZ900R12KE4 featuring trench fieldstop IGBT4 technology for motor drive applications factory

IGBT module Infineon FZ900R12KE4 featuring trench fieldstop IGBT4 technology for motor drive applications

Product OverviewThe FZ900R12KE4 is a 62mm C-Series IGBT module featuring Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode technology. Designed for high-power applications, it offers extended operating temperature, low switching losses, high robustness, and a positive temperature coefficient for VCEsat. Its robust mechanical features include 4 kV AC insulation, high creepage and clearance distances, and an isolated base plate, making it suitable for high power converters,

quality Power semiconductor JIAENSEMI JNG50T120QMU2 optimized for UPS motor drives and portable power station factory

Power semiconductor JIAENSEMI JNG50T120QMU2 optimized for UPS motor drives and portable power station

Product OverviewJIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as UPS, Motor drives, PFC, Portable power station, and other soft switching applications.Product AttributesBrand: JIAENCertifications: Halogen Free and Green Devices AvailableTechnical SpecificationsParameterValueUnitsConditionsVCES1200VVGES+ 30VIC (TC=25 )100AContinuous Collector CurrentIC (TC=100)50AContinuous Collector CurrentICM200APulsed Collector Current (Note 1)IF

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