Single IGBTs
Insulated Gate Bipolar Transistor HXY MOSFET DGTD65T50S1PT-HXY with Halogen Free and RoHS Compliance
Insulated Gate Bipolar Transistor DGTD65T50S1PTThe DGTD65T50S1PT is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications such as UPS, motor drives, boost converters, and portable power stations. The device features a positive temperature coefficient,
Power semiconductor device JIAENSEMI JNG20T65KS trench IGBT with 650 volt collector emitter voltage
Product OverviewThe JNG20T65KS is a JIAEN Trench IGBT offering lower losses and higher energy efficiency. It is designed for applications such as motor control, general inverters, and other soft switching applications, featuring high-speed switching and soft current turn-off waveforms.Product AttributesBrand: JIAENOrigin: www.jiaensemi.comTechnical SpecificationsParameterValueUnitsConditionsCollector-Emitter Voltage (VCES)650VGate-Emitter Voltage (VGES)+30VContinuous
EconoDUAL3 Infineon FF600R17ME4 IGBT Module Featuring Low VCEsat and Positive Temperature Coefficient
Infineon EconoDUAL3 Module FF600R17ME4 The FF600R17ME4 is an EconoDUAL3 module featuring Trench/Fieldstop IGBT4 and Emitter Controlled diode with NTC. It offers high current density, low VCEsat with a positive temperature coefficient, and high power density with an isolated base plate. This module is suitable for high power converters and wind turbines. Product Attributes Brand: Infineon Series: EconoDUAL3 Module Label Code: FF600R17ME4 Material of module baseplate: Cu
Industrial Power Module Infineon FF900R12ME7B11 with EconoDUAL3 Packaging and TRENCHSTOP IGBT7 Technology
EconoDUAL3 Module with TRENCHSTOP IGBT7 and Emitter Controlled 7 Diode and NTCThe EconoDUAL3 module features TRENCHSTOP IGBT7 and Emitter Controlled 7 diode technology, offering high power density and an integrated temperature sensor. This module is designed for high-performance applications including motor drives, servo drives, UPS systems, and hybrid commercial agriculture vehicles. Its key advantages include Trenchstop IGBT7 for enhanced performance and VCEsat with a
Trench IGBT JIAENSEMI JNG30T65HS1 with 30A Diode Continuous Forward Current and High Speed Switching
Product OverviewThe JNG30T65HS1 is a Trench IGBT from JIAEN Semiconductor, designed for lower losses and higher energy efficiency. It features high-speed switching and soft current turn-off waveforms, making it suitable for applications requiring higher system efficiency.Product AttributesBrand: JIAEN SemiconductorProduct Line: Trench IGBTsTechnical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max.UnitsCollector-Emitter VoltageVCES650VGate-Emitter VoltageVGES
IGBT Power Transistor 1200V 50A HXY MOSFET STGYA50H120DF2-HXY Ideal for Solar Inverter UPS and EV Charger
Product OverviewThe STGYA50H120DF2 is a 1200V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage, making it suitable for UPS, EV-chargers, and solar string inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: STGYA50H120DF2Origin: Shenzhen HuaXuanYang Electronics CO.
1200V 40A HXY MOSFET IKW40N120H3-HXY IGBT featuring fast switching low VCEsat ideal for PTC and motor drive applications
Product OverviewThe IKW40N120H3 is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications such as PTC, motor drives, and onboard chargers (OBC). The device offers a positive temperature coefficient, fast switching, low VCE(sat), and is reliable and rugged
Infineon FS75R12W2T7 B11 EasyPACK module designed for high power density and operation in motor drives
Product OverviewThe FS75R12W2T7_B11 EasyPACK module features TRENCHSTOP IGBT7 and Emitter Controlled 7 Diode with PressFIT technology and an integrated NTC thermistor. It offers low VCEsat, overload operation up to 175C, and a compact design with high power density. Suitable for auxiliary inverters, air conditioning, motor drives, servo drives, and UPS systems.Product AttributesBrand: InfineonTechnology: TRENCHSTOP IGBT7, Emitter Controlled 7 Diode, PressFITSubstrate Material
IGBT 650V 75A Power Transistor HXY MOSFET FGH75T65SQD-F155-HXY for UPS EV Chargers Solar Inverters
Product OverviewThe FGH75T65SQD-F155 is a 650V, 75A Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It offers easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for use in UPS, EV-Chargers, Solar String Inverters, and Energy Storage Inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: FGH75T65SQD-F155Package:
Industrial grade IGBT Infineon IKW50N65H5 with 80 ampere collector current and low saturation voltage
Product OverviewThe IKW50N65H5 is a high-speed fifth-generation IGBT from Infineon's TRENCHSTOPTM 5 technology, copacked with a RAPID 1 fast and soft antiparallel diode. It offers best-in-class efficiency in hard switching and resonant topologies, serving as a plug-and-play replacement for previous generation IGBTs. With a 650V breakdown voltage and low gate charge, it is designed for demanding applications in solar converters, uninterruptible power supplies, welding
High current IGBT JIAENSEMI JNG25T65AI offering 25A continuous collector current at 100 degrees Celsius
JNG25T65AI IGBTJIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as motor control, general inverters, and other soft switching applications. They are designed for high-speed switching and provide higher system efficiency with soft current turn-off waveforms and square RBSOA.Product AttributesBrand: JIAENModel: JNG25T65AITechnical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max.UnitsCollector-Emitter VoltageVCES650VGate-Emitter
Industrial Reverse Conducting IGBT Infineon IHW40N65R6 with Low EMI and Tight Parameter Distribution
Reverse-Conducting IGBT with monolithic body diodeThis Reverse-Conducting IGBT offers a complete product spectrum with PSpice models available. It features easy parallel switching capability due to its positive temperature coefficient in VCEsat, high ruggedness, and stable temperature behavior. The device boasts low EMI, Pb-free lead plating, and is RoHS compliant. It includes a powerful monolithic reverse-conducting diode with a low forward voltage, very low VCEsat, and low
650V 50A Insulated Gate Bipolar Transistor HXY MOSFET STGWA50M65DF2-HXY with Low Gate Charge and Low EMI
Product OverviewThe STGWA50M65DF2 is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. Its maximum junction temperature is 175C.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: STGWA50M65DF2Origin: Shenzhen HuaXuanYang Electronics CO.,LTDPackage: TO-247Packing:
High speed switching IGBT JIAENSEMI JNG40T65AI designed for soft switching and motor control systems
Product OverviewThe JNG40T65AI Trench IGBT from JIAEN Semiconductor offers advanced performance with 650V voltage rating and 40A continuous collector current. It features low conduction losses, high speed switching capabilities, and soft current turn-off waveforms, contributing to higher system efficiency. Ideal for motor control, general inverters, and soft switching applications.Product AttributesBrand: JIAENModel: JNG40T65AITechnical SpecificationsParameterSymbolTest
650V 25A Trench IGBT JIAENSEMI JNG25T65PS1 Optimized for Soft Switching and Motor Drive Applications
Product OverviewThe JNG25T65PS1 is a 650V, 25A Trench IGBT from JIAEN Semiconductor, designed for high-speed switching and improved system efficiency. It features soft current turn-off waveforms and a square RBSOA, making it suitable for applications such as motor control, general inverters, and other soft switching scenarios. These IGBTs offer lower losses and higher energy efficiency.Product AttributesBrand: JIAENModel: JNG25T65PS1Technical SpecificationsParameterSymbolTest
Power electronics component HXY MOSFET IRG8P50N120KD-EPBF-HXY IGBT designed for motor drives and PTC
Product OverviewThe IRG8P50N120KD-EPBF is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications such as PTC, motor drives, and On-Board Chargers (OBC).Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: IRG8P50N120KD-EPBFPackage Type:
Trench IGBT JIAENSEMI JNG20T65PS1 offering 650 volt 20 amp capability for soft switching and inverter
JNG20T65PS1 IGBT JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as motor control, general inverters, and other soft switching applications. The JNG20T65PS1 features 650V, 20A capability with a typical VCE(sat) of 2.0V at VGE=15V and IC=20A, providing high-speed switching and improved system efficiency with soft current turn-off waveforms and square RBSOA. Product Attributes Brand: JIAEN Semiconductor Product Series: Trench IGBTs
Motor Drives and Servo Drives Powered by Infineon FP25R12KT4 EconoPIM2 Module with Integrated Diodes
Product Overview The FP25R12KT4 is an EconoPIM2 module featuring Trench/Fieldstop IGBT4 and Emitter Controlled 4 diodes with an integrated NTC. It offers extended operation temperature, low switching losses, and high power and thermal cycling capability. Suitable for motor drives and servo drives. Product Attributes Brand: EconoPIM2 Certifications: UL approved (E83335) Compliance: RoHS compliant Technical Specifications Parameter Unit IGBT, Inverter (Tvj=25C) IGBT, Inverter
Power IGBT HXY MOSFET NGTB40N65FL2WG-HXY with Low EMI and Maximum Junction Temperature of 175 Celsius
Product OverviewThe NGTB40N65FL2WG is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to its positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, this device is suitable for UPS, EV-Chargers, and Solar String Inverter applications.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDOrigin:
NPT IGBT JIAENSEMI JNG25N120HS 1200V 45A suitable for induction heating UPS and inverter applications
JNG25N120HS IGBTJIAEN NPT IGBTs offer lower losses and higher energy efficiency for applications such as IH (induction heating), UPS, general inverters, and other soft switching applications. They are designed for high-speed switching and provide higher system efficiency with soft current turn-off waveforms and square RBSOA using NPT technology.Product AttributesBrand: JIAENModel: JNG25N120HSTechnical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max.UnitsCollector
