Single IGBTs
650V 25A Trench IGBT JIAENSEMI JNG25T65PS1 Optimized for Soft Switching and Motor Drive Applications
Product OverviewThe JNG25T65PS1 is a 650V, 25A Trench IGBT from JIAEN Semiconductor, designed for high-speed switching and improved system efficiency. It features soft current turn-off waveforms and a square RBSOA, making it suitable for applications such as motor control, general inverters, and ...
Power electronics component HXY MOSFET IRG8P50N120KD-EPBF-HXY IGBT designed for motor drives and PTC
Product OverviewThe IRG8P50N120KD-EPBF is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is ...
Trench IGBT JIAENSEMI JNG20T65PS1 offering 650 volt 20 amp capability for soft switching and inverter
JNG20T65PS1 IGBT JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as motor control, general inverters, and other soft switching applications. The JNG20T65PS1 features 650V, 20A capability with a typical VCE(sat) of 2.0V at VGE=15V and IC=20A, providing high...
Motor Drives and Servo Drives Powered by Infineon FP25R12KT4 EconoPIM2 Module with Integrated Diodes
Product Overview The FP25R12KT4 is an EconoPIM2 module featuring Trench/Fieldstop IGBT4 and Emitter Controlled 4 diodes with an integrated NTC. It offers extended operation temperature, low switching losses, and high power and thermal cycling capability. Suitable for motor drives and servo drives. ...
Power IGBT HXY MOSFET NGTB40N65FL2WG-HXY with Low EMI and Maximum Junction Temperature of 175 Celsius
Product OverviewThe NGTB40N65FL2WG is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to its positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction ...
NPT IGBT JIAENSEMI JNG25N120HS 1200V 45A suitable for induction heating UPS and inverter applications
JNG25N120HS IGBTJIAEN NPT IGBTs offer lower losses and higher energy efficiency for applications such as IH (induction heating), UPS, general inverters, and other soft switching applications. They are designed for high-speed switching and provide higher system efficiency with soft current turn-off ...
Durable power device HXY MOSFET FGH40T65SHD-F155-HXY optimized for EV charger solar inverter and UPS
Product OverviewThe FGH40T65SHD-F155 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction ...
IGBT transistor JIAENSEMI JNG20T65FS1 650V 20A TO220F package suitable for motor control applications
JNG20T65FS1 IGBT The JIAEN Trench IGBTs offer lower losses and higher energy efficiency, making them ideal for applications such as motor control, general inverters, and other soft switching applications. Key features include a 650V, 20A rating, low VCE(sat) of 2.0V (typ.), high-speed switching, and ...
power switching device HXY MOSFET IHW30N135R5-HXY suitable for UPS EV chargers and solar inverters
Product OverviewThe IHW30N135R5 is an Insulated Gate Bipolar Transistor (IGBT) from HUAXUANYANG HXY ELECTRONICS CO.,LTD. It features easy paralleling capability due to its positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction ...
NPT IGBT 1200V 50A JIAENSEMI JNG50N120LS ideal for induction heating UPS and inverter applications
Product OverviewThe JNG50N120LS is a 1200V, 50A NPT IGBT from JIAEN Semiconductor, designed for high-speed switching applications. It offers lower losses and higher energy efficiency, making it suitable for Induction Heating (IH), UPS, general inverters, and other soft switching applications. Key ...
High temperature IGBT HXY MOSFET GWA40MS120DF4AG-HXY with 40 amp collector current and RoHS compliance
Product OverviewThe GWA40MS120DF4AG is an Insulated Gate Bipolar Transistor (IGBT) utilizing advanced Trench and Field Stop (T-FS) technology. This design enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is AEC-Q101 ...
Power electronics MOSFET HXY MOSFET IGW50N60H3-HXY with easy paralleling and low EMI characteristics
Product OverviewThe IGW50N60H3 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for various power electronic applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. Its ...
insulated gate bipolar transistor HXY MOSFET IGW40N120H3-HXY for UPS EV charger and solar inverter
Product OverviewThe IGW40N120H3 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for ...
650V 50A insulated gate bipolar transistor with low gate charge and easy paralleling HXY MOSFET SPT50N65F1A1T8TL-HXY
Product OverviewThe SPT50N65F1A1T8TL is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. Its maximum ...
EconoDUAL3 IGBT module Infineon FF600R12ME4 with Trench Fieldstop IGBT4 and Emitter Controlled Diode
Product OverviewThe FF600R12ME4 is an EconoDUAL3 IGBT module featuring Trench/Fieldstop IGBT4 and Emitter Controlled Diode with NTC. It offers low VCEsat with a positive temperature coefficient, high power density, and an isolated base plate. Ideal for high power converters, motor drives, servo ...
High speed IGBT Infineon IKW40N65H5 650 volt 40 amp featuring TRENCHSTOP 5 and RAPID 1 diode for switching
Product OverviewThe IKP40N65H5 and IKW40N65H5 are high-speed 5th generation IGBTs featuring TRENCHSTOPTM 5 technology, copacked with RAPID 1 fast and soft antiparallel diodes. These devices offer best-in-class efficiency in hard switching and resonant topologies and serve as plug-and-play replacemen...
650V 50A Insulated Gate Bipolar Transistor HXY MOSFET AIGW50N65H5-HXY for UPS EV Chargers and Solar Inverters
AIGW50N65H5 Insulated Gate Bipolar TransistorThe AIGW50N65H5 is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation ...
power switching device JIAENSEMI JNG40T120HS IGBT with square RBSOA and soft current turn off waveform
JNG40T120HS IGBT JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as IH (induction heating), UPS, general inverters, and other soft switching applications. They feature high-speed switching, higher system efficiency, soft current turn-off waveforms, and a ...
HXY MOSFET APT68GA60B-HXY Featuring TO-247 Package and High Collector Current for Power Applications
Product OverviewThe APT68GA60B is an Insulated Gate Bipolar Transistor (IGBT) from HUAXUANYANG HXY ELECTRONICS CO.,LTD. It offers easy paralleling capability due to its positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction ...
Collector Current 40 Amp HXY MOSFET MBQ40T120QESTH HXY IGBT with Improved Switching Characteristics
Product OverviewThe MBQ40T120QESTH is an Insulated Gate Bipolar Transistor (IGBT) utilizing advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction loss, improving switching characteristics, and increasing avalanche energy. It is designed for ...
