Single IGBTs
IGBT device Infineon IKP20N65F5 with fast switching characteristics and qualified to JEDEC standards
Product OverviewThe IKP20N65F5 is a high-speed 5 FAST IGBT from Infineon's TRENCHSTOPTM 5 technology, copacked with a RAPID 1 fast and soft anti-parallel diode. This DuoPack IGBT offers best-in-class efficiency in hard switching and resonant topologies, a 650V breakdown voltage, and low Qg. It is ...
HXY MOSFET APT45GP120B2DQ2G HXY 1200V 50A IGBT transistor module for solar and EV charging solutions
Product OverviewThe APT45GP120B2DQ2G is a 1200V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. Ideal for UPS, EV...
IGBT Module Featuring Infineon FF300R12ME4 EconoDUAL3 Trench Fieldstop Technology for Motor Drives
FF300R12ME4 IGBT ModuleThe FF300R12ME4 is an EconoDUAL3 module featuring Trench/Fieldstop IGBT4 and Emitter Controlled HE diode with NTC. It offers low VCEsat and operates at Tvj op = 150C. Ideal for motor drives, servo drives, UPS systems, and wind turbines.Product AttributesBrand: EconoDUAL3Certif...
Trench and Field Stop Technology Based IGBT HXY MOSFET FGH40T120SMD-F155-HXY for Energy Management
Product OverviewThe FGH40T120SMD-F155 is an Insulated Gate Bipolar Transistor (IGBT) utilizing advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed ...
1200 Volt TRENCHSTOP IGBT 7 Technology Device Featuring Infineon IKZA75N120CH7XKSA1 for Industrial
Product OverviewThe IKZA75N120CH7 is a high-speed 1200 V TRENCHSTOP IGBT 7 Technology device, co-packed with a full-rated current, soft-commutating, ultra-fast recovery, and low Qrr emitter-controlled 7 Rapid diode. It is optimized for high efficiency in high-speed hard switching topologies and ...
IGBT JIAENSEMI JNG75T120QCS2 Featuring 225 Amp Pulsed Collector Current and Short Circuit Withstand
Product OverviewJIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as motor control, general inverters, and other soft switching applications. They feature high-speed switching, higher system efficiency, soft current turn-off waveforms, and square RBSOA.Product ...
EconoDUAL3 Infineon FF450R17ME4 IGBT module with isolated base plate and high power density design
Product OverviewThe FF450R17ME4 is an EconoDUAL3 IGBT module featuring Trench/Fieldstop IGBT4 and Emitter Controlled 3 diode with NTC. It offers low VCEsat with a positive temperature coefficient, high power density, and an isolated base plate. This module is suitable for motor drives, servo drives, ...
power transistor Infineon AIGB15N65H5 IGBT with low gate charge and 175C maximum junction temperature
Product OverviewThe AIGB15N65H5 is a high-speed Insulated Gate Bipolar Transistor (IGBT) from Infineon's TRENCHSTOP 5 technology. It offers best-in-class efficiency in hard switching and resonant topologies, serving as a plug-and-play replacement for previous generation IGBTs. With a 650V breakdown ...
rugged JIAENSEMI JNG15T120HIRU2 trench IGBT module for motor drives UPS and portable power stations
Product OverviewJIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as UPS, Motor drives, PFC, Portable power stations, and other soft switching applications. These devices provide reliable and rugged performance with fast switching capabilities.Product ...
High voltage HXY MOSFET NGTB35N65FL2WG HXY IGBT suitable for demanding power electronics applications
Product OverviewThe NGTB35N65FL2WG is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction ...
switching device HXY MOSFET MIW40N120FLA-BP-HXY offering low VCE saturation and avalanche energy capability
Product OverviewThe MIW40N120FLA-BP is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is ...
High Temperature Stability and Low Gate Charge Infineon IKW08T120 IGBT Module for Frequency Converter
Product Overview The IKW08T120 is a Low Loss DuoPack featuring an IGBT in TrenchStop and Fieldstop technology with a soft, fast recovery Emitter Controlled HE diode. It offers reduced VCE(sat) and VF compared to BUP305D, a short circuit withstand time of 10s, and is designed for frequency converters ...
1200V 50A power transistor HXY MOSFET IXYR50N120C3D1-HXY designed for UPS EV charger and solar inverter
Product OverviewThe IXYR50N120C3D1 is a 1200V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. Ideal for UPS, EV...
High current IGBT HXY MOSFET STGWA40HP65FB-HXY designed for UPS and renewable energy systems applications
Product OverviewThe STGWA40HP65FB is an Insulated Gate Bipolar Transistor (IGBT) from HUAXUANYANG HXY ELECTRONICS CO.,LTD. It offers easy paralleling capability due to a positive temperature coefficient in Vcesat, low EMI, low gate charge, and low saturation voltage. With a maximum junction ...
switching device HXY MOSFET RGS80TSX2GC11-HXY optimized for conduction loss reduction and efficiency
RGS80TSX2GC11 Insulated Gate Bipolar TransistorThe RGS80TSX2GC11 is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction loss, improving switching efficiency, and increasing ...
1200V 75A Insulated Gate Bipolar Transistor HXY MOSFET APT75GP120B2G-HXY for High Power Applications
Product OverviewThe APT75GP120B2G is a 1200V, 75A Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. It features low gate charge, low saturation voltage (Vce(sat)), and easy paralleling capability due to its positive temperature coefficient in Vce(sat). The maximum ...
HXY MOSFET RGTH80TS65GC13 IGBT transistor featuring low EMI and maximum junction temperature of 175C
Product OverviewThe RGTH80TS65GC13 is an Insulated Gate Bipolar Transistor (IGBT) from HUAXUANYANG HXY ELECTRONICS CO.,LTD. Designed for high-performance applications, this device offers easy paralleling capability due to its positive temperature coefficient in VCESAT, low EMI, low gate charge, and ...
IGBT module Infineon IKP30N65H5 featuring RAPID 1 diode and TRENCHSTOP 5 technology for power control
IGBT High Speed 5 with RAPID 1 Diode - IKP30N65H5 The IKP30N65H5 is a high-speed 5th generation IGBT from Infineon, built on TRENCHSTOPTM 5 technology and copacked with a RAPID 1 fast and soft antiparallel diode. This DuoPack offers best-in-class efficiency in hard switching and resonant topologies, ...
Soft Switching IGBT JIAENSEMI JNG15T65KS1 with Enhanced Energy Efficiency and High Speed Performance
JNG15T65KS1 IGBTJIAEN Trench IGBTs offer lower losses and higher energy efficiency, making them suitable for applications such as motor control, general inverters, and other soft switching applications. They feature high-speed switching, higher system efficiency, soft current turn-off waveforms, and ...
Durable HXY MOSFET NGTB40N120FL3WG-HXY IGBT module with 441 watt power dissipation and TO247 package type
Product OverviewThe NGTB40N120FL3WG is an Insulated Gate Bipolar Transistor (IGBT) utilizing advanced Trench and Field Stop (T-FS) technology. This design minimizes conduction losses, enhances switching performance, and improves avalanche energy. It is AEC-Q101 Qualified and suitable for demanding ...
