86--14775986446

Single Bipolar Transistors

quality Silicon NPN Transistor LRC LBC846ALT1G Series with S Prefix Variants and Wide Storage Temperature Range factory

Silicon NPN Transistor LRC LBC846ALT1G Series with S Prefix Variants and Wide Storage Temperature Range

Product OverviewThe LBC846ALT1G Series NPN Silicon General Purpose Transistors from LESHAN RADIO COMPANY, LTD. are designed for a wide range of applications. They feature high ESD ratings and are available in SOT-23 packages. The S-prefix variants are qualified for automotive and other applications requiring unique site and control change requirements, meeting AEC-Q101 standards and PPAP capability.Product AttributesBrand: LESHAN RADIO COMPANY, LTD.Material: SiliconCertificat

quality High Current PNP Transistor LRC L8550HQLT1G Suitable for Compact Electronic and Automotive Circuits factory

High Current PNP Transistor LRC L8550HQLT1G Suitable for Compact Electronic and Automotive Circuits

Product OverviewThe LESHAN RADIO COMPANY, LTD. L8550H series are PNP Silicon General Purpose Transistors designed for high current capacity in a compact SOT-23 package. These epitaxial planar type transistors offer a PNP complement to the L8550H. They are suitable for various applications requiring reliable performance and compact integration.Product AttributesBrand: LESHAN RADIO COMPANY, LTD.Material: SiliconType: PNP Epitaxial planarCertifications: AEC-Q101 Qualified (S-

quality Switching and amplification transistor LRC LBC817-40LT1G NPN silicon type for electronic applications factory

Switching and amplification transistor LRC LBC817-40LT1G NPN silicon type for electronic applications

Product OverviewThe LBC817 series are general purpose NPN silicon transistors designed for various electronic applications. They offer reliable performance with a range of electrical characteristics suitable for switching and amplification tasks.Product AttributesBrand: LESHAN RADIO COMPANY, LTD.Material: NPN SiliconCertifications: RoHS compliantTechnical SpecificationsCharacteristicSymbolLBC817-16LBC817-25LBC817-40UnitNotesCollectorEmitter VoltageV CEO454545VCollectorBase

quality Electronic Component KTP TIP122 NPN Transistor Featuring Built In Damper Diode and TO220 Plastic Package factory

Electronic Component KTP TIP122 NPN Transistor Featuring Built In Damper Diode and TO220 Plastic Package

Product OverviewThis NPN transistor offers high DC current gain and is electrically similar to the popular TIP122. It features a built-in damper diode between the collector and emitter, making it suitable for various electronic applications. The transistor is housed in a TO-220 plastic-encapsulate package.Product AttributesBrand: KTP SemiconductorModel: TIP122Package Type: TO-220 Plastic-EncapsulateOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications

quality KTP 2SB772 PNP Power Transistor Silicon Based Designed for High Current Output and Power Dissipation factory

KTP 2SB772 PNP Power Transistor Silicon Based Designed for High Current Output and Power Dissipation

Product OverviewThe 2SB772 is a Silicon PNP Power Transistor designed for high current output up to 3A. It features low saturation voltage and serves as a complement to the 2SD882. This transistor is suitable for applications requiring efficient power handling.Product AttributesBrand: KTP SemiconductorMarking Code: 2SB772Material: SiliconType: PNP Power TransistorComplement to: 2SD882Technical SpecificationsParameterSymbolValueUnitTest ConditionCollector-Base Breakdown

quality NPN transistor KTP SS8050 in SOT23 package designed for various general purpose electronic functions factory

NPN transistor KTP SS8050 in SOT23 package designed for various general purpose electronic functions

Product OverviewThe SS8050 is an NPN transistor in a SOT-23 package, designed for general-purpose amplification and switching applications. It is the complementary part to the SS8550 transistor.Product AttributesBrand: KTP SemiconductorPackage: SOT-23Material: Plastic-EncapsulatedComplementary Part: SS8550Technical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitCollector-base breakdown voltageV(BR)CBOIC = 100A, IE=040VCollector-emitter breakdown voltageV(BR)CEOIC =

quality General purpose PNP transistor KTP S8550 2TY featuring collector current up to 0.5A in compact SOT23 factory

General purpose PNP transistor KTP S8550 2TY featuring collector current up to 0.5A in compact SOT23

KTP Semiconductor S8550 PNP TransistorThe KTP Semiconductor S8550 is a PNP transistor designed as a complimentary part to the S8050. It is suitable for general-purpose applications requiring a collector current of up to 0.5A.Product AttributesBrand: KTP SemiconductorModel: S8550Type: PNP TransistorMarking: 2TYPackage: SOT-23Technical SpecificationsParameterSymbolTest ConditionsMinMaxUnitCollector-Base VoltageBVCBO-40VCollector-Emitter VoltageBVCEO-25VEmitter-Base VoltageBVEBO

quality Built in damper diode and high current gain PNP transistor KTP TIP127 for power switching applications factory

Built in damper diode and high current gain PNP transistor KTP TIP127 for power switching applications

Product OverviewThe TIP127 is a PNP transistor designed for high DC current gain and features electrical similarity to the popular TIP12 series. It includes a built-in damper diode between the collector and emitter, making it suitable for various power switching and amplification applications.Product AttributesBrand: KTP SemiconductorModel: TIP127Package: TO-220 Plastic-EncapsulateTechnical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitCollector-Base VoltageVCBO100

quality High Speed Switching NPN Silicon Transistor KTP MJE13009-2 Suitable for Motor Control and Regulators factory

High Speed Switching NPN Silicon Transistor KTP MJE13009-2 Suitable for Motor Control and Regulators

Product OverviewThe MJE13009-2 is an NPN Silicon Transistor designed for high-speed switching applications. It is particularly suitable for use in switching regulators and motor control systems, offering high voltage switching capabilities and fast switching performance.Product AttributesBrand: KTP SemiconductorModel: MJE13009-2Type: NPN Silicon TransistorPackage: TO-220Origin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical

quality PNP Transistor KTP MMBT5401 Designed for Medium Power Amplification and Switching in SOT23 Package factory

PNP Transistor KTP MMBT5401 Designed for Medium Power Amplification and Switching in SOT23 Package

MMBT5401 PNP TransistorThe MMBT5401 is a PNP transistor designed for medium power amplification and switching applications. It is complementary to the MMBT5551.Product AttributesBrand: KTP SemiconductorPackage Type: SOT-23Technical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max.UnitCollector-Base VoltageVCBO-160VCollector-Emitter VoltageVCEO-150VEmitter-Base VoltageVEBO-5VCollector CurrentIC0.6ACollector Power DissipationPD0.3WJunction Temperature (MAX.)Tj150Storage

quality NPN Plastic Encapsulated Transistor KTP MMBTA42 with High Breakdown Voltage and Low Saturation Voltage factory

NPN Plastic Encapsulated Transistor KTP MMBTA42 with High Breakdown Voltage and Low Saturation Voltage

Product OverviewThe MMBTA42 is an NPN plastic-encapsulated transistor from KTP Semiconductor. It features a high breakdown voltage and low collector-emitter saturation voltage, making it a complementary part to the MMBTA92 (PNP). This transistor is suitable for various electronic applications requiring reliable performance.Product AttributesBrand: KTP SemiconductorPackage: SOT-23Material: Plastic-EncapsulatedTechnical SpecificationsParameterSymbolTest ConditionsMinMaxUnitColl

quality High Collector Current PNP Transistor KTP SS8550 for General Purpose Electronic Circuit Applications factory

High Collector Current PNP Transistor KTP SS8550 for General Purpose Electronic Circuit Applications

Product OverviewThe SS8550 is a PNP bipolar junction transistor designed for general-purpose applications. It features high collector current capability and serves as a complementary component to the SS8050 transistor. This device is suitable for various electronic circuits requiring amplification or switching functions.Product AttributesBrand: KTP SemiconductorPart Number: SS8550Package Type: SOT-23Marking: SS8550Technical SpecificationsParameterSymbolTest ConditionsMinTypMa

quality Durable NPN Silicon Transistor KTP TIP41C Suitable for Audio Power Amplification and Circuit Designs factory

Durable NPN Silicon Transistor KTP TIP41C Suitable for Audio Power Amplification and Circuit Designs

Product OverviewThe TIP41C is an NPN silicon transistor designed for audio power amplification.Product AttributesBrand: KTP SemiconductorModel: TIP41CType: NPN SILICON TRANSISTORPackage: TO-220Website: http://www.ktp-semi.comTechnical SpecificationsParameterSymbolDescriptionMinTypicalMaxUnitTest ConditionsStorage TemperatureTstg-55150Junction TemperatureTj150Collector Power DissipationPC(Tc=25)65WCollector Power DissipationPC(TA=25)2WCollector-Base VoltageVCBO100VCollector

quality TO92 plastic encapsulated transistor KTP S8050 suitable for switching and amplification in electronics factory

TO92 plastic encapsulated transistor KTP S8050 suitable for switching and amplification in electronics

Product OverviewThe KTP Semiconductor S8050 is a TO-92 plastic-encapsulated diode designed for general-purpose amplification and switching. It is a complement to the S8550 transistor, offering a high total power dissipation of 625mW and a collector current of 500mA.Product AttributesBrand: KTP SemiconductorPackage: TO-92 Plastic-EncapsulateComplementary Part: S8550Technical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitCollector-Base Breakdown VoltageBVcboIc=100uA,

quality General purpose NPN transistor KTP S8050 J3Y with 0.5 amp collector current and SOT-23 package type factory

General purpose NPN transistor KTP S8050 J3Y with 0.5 amp collector current and SOT-23 package type

Product OverviewThe S8050 is an NPN transistor, complementary to the S8550. It is designed for general-purpose applications with a collector current capability of 0.5A. This transistor is supplied in a SOT-23 package.Product AttributesBrand: KTP SemiconductorMarking: J3YComplementary to: S8550Package: SOT-23Technical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitCollector-base breakdown voltageV(BR)CBOIC= 100A, IE=040VCollector-emitter breakdown voltageV(BR)CEOIC

quality High reliability audio power amplifier transistor KTP TIP42C PNP silicon transistor in TO220 package factory

High reliability audio power amplifier transistor KTP TIP42C PNP silicon transistor in TO220 package

Product OverviewAudio power amplifier.Product AttributesBrand: KTP SemiconductorModel: TIP42CType: PNP Silicon TransistorPackage: TO-220Technical SpecificationsParameterSymbolDescriptionMinTypicalMaxUnitTest ConditionsCollector-Emitter Cutoff CurrentICEOCollector-Emitter Cutoff Current-100AVCE=-60V, IB=0Emitter-Base Cutoff CurrentIEBOEmitter-Base Cutoff Current-1.5-2.0mAVEB=-5V, IC=0Collector-Emitter Saturation CurrentICESCollector-Emitter Saturation Current-400mAVCE=-100V,

quality SOT23 NPN Transistor KTP MMBT6517 with High Breakdown Voltage and Low Collector Cutoff Current factory

SOT23 NPN Transistor KTP MMBT6517 with High Breakdown Voltage and Low Collector Cutoff Current

MMBT6517 SOT-23 Plastic-Encapsulate Transistors The MMBT6517 is an NPN transistor featuring high breakdown voltage and low collector-emitter saturation voltage. It is complementary to the MMBTA92 (PNP) transistor and is supplied in a SOT-23 package. Product Attributes Brand: KTP Semiconductor Package: SOT-23 Marking: 497 Technical Specifications Parameter Symbol Test Conditions Min Max Unit Collector-Base Breakdown Voltage V(BR)CBO IC= 100A, IE=0 300 V Collector-Emitter

quality NPN Transistor KTP MMBT5551 for High Voltage Amplifier and Gas Discharge Display Driver Applications factory

NPN Transistor KTP MMBT5551 for High Voltage Amplifier and Gas Discharge Display Driver Applications

Product OverviewThe 2N5551-MMBT5551 is an NPN general purpose amplifier designed for high voltage applications. It is suitable for use in high voltage amplifiers and gas discharge display drivers. The device is available in TO-92 (2N5551) and SOT-23 (MMBT5551) packages.Product AttributesBrand: KTP SemiconductorModel: 2N5551-MMBT5551Type: NPN General Purpose AmplifierSuffix Options: -C (Center Collector), -Y (hFE 180~240)Technical SpecificationsParameter2N5551 (TO-92)MMBT5551

quality Medium power silicon planar NPN transistor JSMSEMI FMMT493 designed for general purpose electronics factory

Medium power silicon planar NPN transistor JSMSEMI FMMT493 designed for general purpose electronics

Product OverviewThe FMMT493 is an NPN silicon planar medium power transistor designed for general-purpose applications. It offers complementary pairing with the FMMT593.Product AttributesBrand: JSMICRO SemiconductorMarking: 493Technical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitCollector-Base VoltageVCBO120VCollector-Emitter VoltageVCEO100VEmitter-Base VoltageVEBO5VCollector CurrentIC1000mACollector Power DissipationPC(Ta=25 unless otherwise noted)250mWThermal

quality High voltage low leakage transistor JSMSEMI 2SA1943-O-JSM for performance in low frequency amplification factory

High voltage low leakage transistor JSMSEMI 2SA1943-O-JSM for performance in low frequency amplification

Product OverviewThe 2SA1943/2SC5200 are semiconductor discrete devices designed for low-frequency amplification. They offer high breakdown voltage, low leakage current, and superior frequency characteristics, making them suitable for general amplification circuits, audio power amplifiers, power supply regulation, and other electronic circuits.Product AttributesBrand: JSMICRO SemiconductorOrigin: Not specifiedMaterial: SemiconductorColor: Not specifiedCertifications: Not

28 29 30 31 32 Next